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Candidate platform for studying flatband-induced spin-triplet superconductivity
Authors:
P. Sidorczak,
W. Wolkanowicz,
A. Kaleta,
M. Wójcik,
S. Gierałtowska,
K. Gas,
T. Płociński,
R. Minikayev,
S. Kret,
M. Sawicki,
T. Wojtowicz,
D. Wasik,
M. Gryglas-Borysiewicz,
K. Dybko
Abstract:
This paper explores the potential for spin-triplet superconductivity in molecular beam epitaxy-grown IV-VI semiconductor superlattices. The findings present compelling evidence for spin-triplet pairing in PbTe/SnTe by the method of soft point-contact spectroscopy and spin-polarised point-contact spectroscopy. The experimental data are understood with the Anderson-Brinkman-Morel model of p-wave ele…
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This paper explores the potential for spin-triplet superconductivity in molecular beam epitaxy-grown IV-VI semiconductor superlattices. The findings present compelling evidence for spin-triplet pairing in PbTe/SnTe by the method of soft point-contact spectroscopy and spin-polarised point-contact spectroscopy. The experimental data are understood with the Anderson-Brinkman-Morel model of p-wave electron pairing. It is pointed out that emergent superconductivity can have its origin in topological flat bands obtained due to internal stresses of the sample similar to twisted layer graphene.
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Submitted 6 June, 2024;
originally announced June 2024.
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ALD grown zinc oxide with controllable electrical properties
Authors:
E. Guziewicz,
M. Godlewski,
L. Wachnicki,
T. A. Krajewski,
G. Luka,
S. Gieraltowska,
R. Jakiela,
A. Stonert,
W. Lisowski,
M. Krawczyk,
J. W. Sobczak,
A. Jablonski
Abstract:
The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10^15 cm-3, while mobility of electrons is between 20 and 50 cm…
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The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10^15 cm-3, while mobility of electrons is between 20 and 50 cm2/Vs. Electrical parameters of ZnO films deposited by ALD at low temperature regime are appropriate for constructing of the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are characterized by the rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100degC which makes them appropriate for deposition on organic substrates.
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Submitted 9 August, 2013;
originally announced August 2013.
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Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells
Authors:
G. Grabecki,
J. Wróbel,
M. Czapkiewicz,
Ł. Cywiński,
S. Gierałtowska,
E. Guziewicz,
M. Zholudev,
V. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretski,
F. Teppe,
W. Knap,
T. Dietl
Abstract:
We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is carried by the edge channels, as expected for a two-dimensional topological insulator. However, high and non-quantized values of channel resistances show that the…
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We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is carried by the edge channels, as expected for a two-dimensional topological insulator. However, high and non-quantized values of channel resistances show that the topological protection length (i.e. the distance on which the carriers in helical edge channels propagate without backscattering) is much shorter than the channel length, which is ~100 micrometers. The weak temperature dependence of the resistance and the presence of temperature dependent reproducible quasi-periodic resistance fluctuations can be qualitatively explained by the presence of charge puddles in the well, to which the electrons from the edge channels are tunnel-coupled.
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Submitted 22 October, 2013; v1 submitted 23 July, 2013;
originally announced July 2013.
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Properties and characterization of ALD grown dielectric oxides for MIS structures
Authors:
S. Gieraltowska,
D. Sztenkiel,
E. Guziewicz,
M. Godlewski,
G. Luka,
B. S. Witkowski,
L. Wachnicki,
E. Lusakowska,
T. Dietl,
M. Sawicki
Abstract:
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evapo…
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We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 \times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
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Submitted 27 July, 2011;
originally announced July 2011.
