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Temperature effects on the structure and mechanical properties of vapor deposited a-SiO2
Authors:
Vrishank Jambur,
Manel Molina-Ruiz,
Tom Dauer,
Donez Horton-Bailey,
Richard Vallery,
David Gidley,
Thomas Metcalf,
Xiao Liu,
Frances Hellman,
Izabela Szlufarska
Abstract:
Amorphous silica (a-SiO2) exhibits unique thermo-mechanical behaviors that set it apart from other glasses. However, there is still limited understanding of how this mechanical behavior is related to the atomic structure and to the preparation conditions of a-SiO2. Here, we used electron beam (e-beam) physical vapor deposition (PVD) to prepare a series of a-SiO2 films grown at different substrate…
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Amorphous silica (a-SiO2) exhibits unique thermo-mechanical behaviors that set it apart from other glasses. However, there is still limited understanding of how this mechanical behavior is related to the atomic structure and to the preparation conditions of a-SiO2. Here, we used electron beam (e-beam) physical vapor deposition (PVD) to prepare a series of a-SiO2 films grown at different substrate temperatures and then combined molecular simulations with Positronium Annihilation Lifetime Spectroscopy and nanoindentation experiments to establish relations among processing, structure, and mechanical response of the films. Specifically, we found that increase in the growth temperature leads to increase in the elastic moduli and hardness of the films. The relative porosity in the films also increases while the a-SiO2 network itself becomes denser, resulting in an overall increase in density despite increased porosity. In addition, we found that the a-SiO2 films exhibit the same anomalous temperature dependence of elastic modulus as bulk a-SiO2. However, the rate of increase in the elastic modulus with the measurement temperature was found to depend on the density of the a-SiO2 network and therefore on the growth temperature. Our findings provide new insights into the influence of the atomic network structure on the anomalous thermomechanical behavior of a-SiO2 and in turn guidance to control the mechanical properties of a-SiO2 films.
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Submitted 12 April, 2022;
originally announced April 2022.
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Positronium in MOFs: the Atom out of the box
Authors:
P. Crivelli,
D. Cooke,
B. Barbiellini,
B. L. Brown,
J. I. Feldblyum,
P. Guo,
D. W. Gidley,
L. Gerchow,
A. J. Matzger
Abstract:
Recently, evidence for positronium (Ps) in a Bloch state in self-assembled metal--organic frameworks (MOFs) has been reported [Dutta et al., Phys. Rev. Lett. 110, 197403 (2013)]. In this paper, we study Ps emission into vacuum from four different MOFs crystals: MOF-5, IRMOF-8, FMA and IRMOF-20. Our measurements of Ps yield and emission energy into vacuum provide definitive evidence of Ps delocaliz…
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Recently, evidence for positronium (Ps) in a Bloch state in self-assembled metal--organic frameworks (MOFs) has been reported [Dutta et al., Phys. Rev. Lett. 110, 197403 (2013)]. In this paper, we study Ps emission into vacuum from four different MOFs crystals: MOF-5, IRMOF-8, FMA and IRMOF-20. Our measurements of Ps yield and emission energy into vacuum provide definitive evidence of Ps delocalization. We determine with a different technique Ps diffusion lengths in agreement with the recently published results. Furthermore, we measure that a fraction of the Ps is emitted into vacuum with a distinctly smaller energy than what one would expect for Ps localized in the MOFs' cells. We show that a calculation assuming Ps delocalized in a Kronig--Penney potential reproduces the measured Ps emission energy.
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Submitted 4 October, 2013; v1 submitted 25 September, 2013;
originally announced September 2013.
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Precision lifetime measurements of a single trapped ion with ultrafast laser pulses
Authors:
D. L. Moehring,
B. B. Blinov,
D. W. Gidley,
R. N. Kohn Jr.,
M. J. Madsen,
T. D. Sanderson,
R. S. Vallery,
C. Monroe
Abstract:
We report precision measurements of the excited state lifetime of the $5p$ $^2P_{1/2}$ and $5p$ $^2P_{3/2}$ levels of a single trapped Cd$^+$ ion. The ion is excited with picosecond laser pulses from a mode-locked laser and the distribution of arrival times of spontaneously emitted photons is recorded. The resulting lifetimes are 3.148 $\pm$ 0.011 ns and 2.647 $\pm$ 0.010 ns for $^2P_{1/2}$ and…
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We report precision measurements of the excited state lifetime of the $5p$ $^2P_{1/2}$ and $5p$ $^2P_{3/2}$ levels of a single trapped Cd$^+$ ion. The ion is excited with picosecond laser pulses from a mode-locked laser and the distribution of arrival times of spontaneously emitted photons is recorded. The resulting lifetimes are 3.148 $\pm$ 0.011 ns and 2.647 $\pm$ 0.010 ns for $^2P_{1/2}$ and $^2P_{3/2}$ respectively. With a total uncertainty of under 0.4%, these are among the most precise measurements of any atomic state lifetimes to date.
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Submitted 14 May, 2005;
originally announced May 2005.
