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Nanorods based on mesoporous silica containing iron oxide nanoparticles as catalytic nanomotors: study of motion dynamics
Authors:
Rafael Mestre,
Núria Cadefau,
Ana C. Hortelão,
Jan Grzelak,
Martí Gich,
Anna Roig,
Samuel Sánchez
Abstract:
Self-propelled particles and, in particular, those based on mesoporous silica, have raised considerable interest due to their potential applications in the environmental and biomedical fields thanks to their biocompatibility, tunable surface chemistry and large porosity. Although spherical particles have been widely used to fabricate nano- and micromotors, not much attention has been paid to other…
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Self-propelled particles and, in particular, those based on mesoporous silica, have raised considerable interest due to their potential applications in the environmental and biomedical fields thanks to their biocompatibility, tunable surface chemistry and large porosity. Although spherical particles have been widely used to fabricate nano- and micromotors, not much attention has been paid to other geometries, such as nanorods. Here, we report the fabrication of self-propelled mesoporous silica nanorods (MSNRs) that move by the catalytic decomposition of hydrogen peroxide by a sputtered Pt layer, Fe2O3 nanoparticles grown within the mesopores, or the synergistic combination of both. We show that motion can occur in two distinct sub-populations characterized by two different motion dynamics, namely enhanced diffusion or directional propulsion, especially when both catalysts are used. These results open up the possibility of using MSNRs as chassis for the fabrication of self-propelled particles for the environmental or biomedical fields.
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Submitted 5 November, 2020;
originally announced November 2020.
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Soft chemistry assisted On-chip Integration of Nanostructured quartz-based Piezoelectric Microelectromechanical System
Authors:
Claire Jolly,
Andres Gomez,
David Sanchez-Fuentes,
Dilek Cakiroglu,
Raissa Rathar,
Nicolas Maurin,
Ricardo Garcia-Bermejo,
Benoit Charlot,
Marti Gich,
Michael Bahriz,
Laura Picas,
Adrian Carretero-Genevrier
Abstract:
The development of advanced piezoelectric quartz MEMS for sensing and precise frequency control applications requires the nanostructuration and on chip integration on silicon of this material. However, the current quartz manufacturing methods are based on bonding bulk micromachined crystals on silicon, which limits the size, the performance, the integration cost and the scalability of quartz micro…
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The development of advanced piezoelectric quartz MEMS for sensing and precise frequency control applications requires the nanostructuration and on chip integration on silicon of this material. However, the current quartz manufacturing methods are based on bonding bulk micromachined crystals on silicon, which limits the size, the performance, the integration cost and the scalability of quartz micro devices. Here, we combine chemical solution deposition, soft nanoimprint lithography and top down microfabrication processes to develop the first nanostructured epitaxial 100 quartz 100 Si piezoelectric cantilevers. The coherent Si quartz interface and film thinness combined with a controlled nanostructuration on silicon insulator silicon technology substrates provides high force and mass sensitivity while preserving the mechanical quality factor of the microelectromechanical systems. This work proves that biocompatible nanostructured epitaxial piezoelectric quartz based MEMS on silicon can be engineered at low cost by combining soft chemistry and top down lithographic techniques.
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Submitted 15 July, 2020;
originally announced July 2020.
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Unconventional Ferroelectric Switching via Local Domain Wall Motion in Multiferroic $ε$-Fe2O3 Films
Authors:
Xiangxiang Guan,
Lide Yao,
Konstantin Z. Rushchanskii,
Sampo Inkinen,
Richeng Yu,
Marjana Ležaić,
Florencio Sánchez,
Martí Gich,
Sebastiaan van Dijken
Abstract:
Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported values of coercive fields and saturation polarization persist in literature for many materials. This raises questions about the atomic-scale mechanisms behind polar…
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Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported values of coercive fields and saturation polarization persist in literature for many materials. This raises questions about the atomic-scale mechanisms behind polarization reversal. Unconventional ferroelectric switching in $ε$-Fe2O3 films, a material that combines ferrimagnetism and ferroelectricity at room temperature, is reported here. High-resolution in-situ scanning transmission electron microscopy (STEM) experiments and first-principles calculations demonstrate that polarization reversal in $ε$-Fe2O3 occurs around pre-existing domain walls only, triggering local domain wall motion in moderate electric fields of 250 - 500 kV/cm. Calculations indicate that the activation barrier for switching at domain walls is nearly a quarter of that corresponding to the most likely transition paths inside $ε$-Fe2O3 domains. Moreover, domain walls provide symmetry lowering, which is shown to be necessary for ferroelectric switching. Local polarization reversal in $ε$-Fe2O3 limits the macroscopic ferroelectric response and offers important hints on how to tailor ferroelectric properties by domain structure design in other relevant ferroelectric materials.
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Submitted 26 August, 2019;
originally announced August 2019.
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Nanostructure engineering of epitaxial piezoelectric α-quartz thin films on silicon
Authors:
Q. Zhang,
D. Sánchez-garcia,
R. Desgarceaux,
A. Gomez,
P. Escofet-Majora,
J. Oró-soler,
J. Gazquez,
G. Larrieu,
B. Charlot,
M. Gich,
A. Carretero-Genevrier
Abstract:
The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of telecommunication to the GHz frequencies. Here we report unprecedented large-scale fabrication of ordered arrays of piezoelectric epitaxial quartz nanostructures on silicon substrates by the combination of soft-chemistry and three cost effective lithographic techniques: (i)…
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The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of telecommunication to the GHz frequencies. Here we report unprecedented large-scale fabrication of ordered arrays of piezoelectric epitaxial quartz nanostructures on silicon substrates by the combination of soft-chemistry and three cost effective lithographic techniques: (i) laser transfer lithography, (ii) soft nanoimprint lithography on Sr-doped SiO2 sol-gel thin films and (iii) self-assembled SrCO3 nanoparticles reactive nanomasks. Epitaxial α-quartz nanopillars with different diameters (down to 50 nm) and heights (up to 2000 nm) were obtained for the first time. This work proves the control over the shape, micro- and nano-patterning of quartz thin films while preserving its crystallinity, texture and piezoelectricity. This work opens up the opportunity to fabricate new high frequency resonators and high sensitivity sensors relevant in different fields of application.
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Submitted 19 August, 2019;
originally announced August 2019.
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Tuning oxygen vacancy diffusion through strain in SrTiO$_3$ thin films
Authors:
Lucía Iglesias,
Andrés Gómez,
Martí Gich,
Francisco Rivadulla
Abstract:
Understanding the diffusion of oxygen vacancies in oxides under different external stimuli is crucial for the design of ion-based electronic devices, improve catalytic performance, etc. In this manuscript, using an external electric field produced by an AFM tip, we obtain the room-temperature diffusion coefficient of oxygen-vacancies in thin-films of SrTiO$_3$ under compressive/tensile epitaxial s…
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Understanding the diffusion of oxygen vacancies in oxides under different external stimuli is crucial for the design of ion-based electronic devices, improve catalytic performance, etc. In this manuscript, using an external electric field produced by an AFM tip, we obtain the room-temperature diffusion coefficient of oxygen-vacancies in thin-films of SrTiO$_3$ under compressive/tensile epitaxial strain. Tensile strain produces a substantial increase of the diffusion coefficient, facilitating the mobility of vacancies through the film. Additionally, the effect of tip bias, pulse time, and temperature on the local concentration of vacancies is investigated. These are important parameters of control in the production and stabilization of non-volatile states in ion-based memresistive devices. Our findings show the key role played by strain for the control of oxygen vacancy migration in thin-film oxides.
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Submitted 3 July, 2018;
originally announced July 2018.
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Piezo-generated charge map** revealed through Direct Piezoelectric Force Microscopy
Authors:
Andres Gomez,
Marti Gich,
Adrien Carretero-Genevrier,
Teresa Puig,
Xavier Obradors
Abstract:
While piezoelectrics and ferroelectrics are playing a key role in many everyday applications, there are still a number of open questions related to the physics of those materials. In order to foster the understanding of piezoelectrics and ferroelectric and pave the way to future applications, the nanoscale characterization of these materials is essential. In this light, we have developed a novel A…
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While piezoelectrics and ferroelectrics are playing a key role in many everyday applications, there are still a number of open questions related to the physics of those materials. In order to foster the understanding of piezoelectrics and ferroelectric and pave the way to future applications, the nanoscale characterization of these materials is essential. In this light, we have developed a novel AFM based mode that obtains a direct quantitative analysis of the piezoelectric coefficient d33. This nanoscale tool is capable of detecting and reveal piezo-charge generation through the direct piezoelectric effect at the surface of the piezoelectric and ferroelectric materials. We report the first nanoscale images of the charge generated in a thick single crystal of Periodically Poled Lithium Niobate (PPLN) and a Bismuth Ferrite (BiFO3) thin film by applying a force and recording the current produced by the materials. The quantification of both d33 coefficients for PPLN and BFO are 13 +- 2 pC/N and 46 +- 7 pC/N respectively, in agreement with the values reported in the literature. This new mode can operate simultaneously with PFM mode providing a powerful tool for the electromechanical and piezo-charge generation characterization of ferroelectric and piezoelectric materials.
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Submitted 14 September, 2016;
originally announced September 2016.
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Multiferroic Iron Oxide Thin Films at Room-Temperature
Authors:
Marti Gich,
Ignasi Fina,
Alessio Morelli,
Florencio Sanchez,
Marin Alexe,
Jaume Gazquez,
Josep Fontcuberta,
Anna Roig
Abstract:
In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very c…
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In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very challenging to integrate in devices. Here we report on the strategy to stabilize the metastable epsilon-Fe2O3 in thin film form, and we show that besides its already known ferrimagnetic nature, the films are also ferroelectric at 300 K with a remanent polarization of 1 microC/cm2. The film polarization shows long retention times and can be switched under small applied voltages. These characteristics make of epsilon-Fe2O3 the first single-ion transition-metal oxide which is ferro(ferri)magnetic and ferroelectric at room temperature. The simple composition of this new multiferroic oxide and the discovery of a robust path for its thin film growth may boost the exploitation of epsilon-Fe2O3 in novel devices.
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Submitted 19 May, 2014;
originally announced May 2014.
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Electromagnon in ferrimagnetic eps-Fe2O3 nanograin ceramics
Authors:
Christelle Kadlec,
Filip Kadlec,
Veronica Goian,
Marti Gich,
Martin Kempa,
Stephane Rols,
Maxim Savinov,
Jan Prokleska,
Milan Orlita,
Stanislav Kamba
Abstract:
Electromagnons are known from multiferroics as spin waves excited by the electric component of electromagnetic radiation. We report the discovery of an excitation in the far-infrared spectra of eps-Fe2O3 which we attribute to an electromagnon appearing below 110 K, where the ferrimagnetic structure becomes incommensurately modulated. Inelastic neutron scattering shows that the electromagnon energy…
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Electromagnons are known from multiferroics as spin waves excited by the electric component of electromagnetic radiation. We report the discovery of an excitation in the far-infrared spectra of eps-Fe2O3 which we attribute to an electromagnon appearing below 110 K, where the ferrimagnetic structure becomes incommensurately modulated. Inelastic neutron scattering shows that the electromagnon energy corresponds to that of a magnon from the Brillouin zone boundary. Dielectric measurements did not reveal any sign of ferroelectricity in eps-Fe2O3 down to 10 K, despite its acentric crystal structure. This shows that the activation of an electromagnon requires, in addition to the polar ferrimagnetic structure, a modulation of the magnetic structure. We demonstrate that a combination of inelastic neutron scattering with infrared and / or terahertz spectroscopies allows detecting electromagnons in ceramics, where no crystal-orientation analysis of THz and infrared spectra is possible.
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Submitted 27 August, 2013; v1 submitted 14 May, 2013;
originally announced May 2013.
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High and low-temperature crystal and magnetic structures of epsilon-Fe2O3 and their correlation to its magnetic properties
Authors:
M. Gich,
C. Frontera,
A. Roig,
E. Taboada,
E. Molins,
H. R. Rechenberg,
J. D. Ardisson,
W. A. A. Macedo,
C. Ritter,
V. Hardy,
J. Sort,
V. Skumryev,
J. Nogues
Abstract:
The crystal and magnetic structures of the orthorhombic e-Fe2O3 have been studied by simultaneous Rietveld refinement of X-ray and neutron powder diffraction data in combination with Mossbauer spectroscopy, as well as magnetisation and heat capacity measurements. It has been found that above 150 K the e-Fe2O3 polymorph is a collinear ferrimagnet with the magnetic moments directed along the a axi…
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The crystal and magnetic structures of the orthorhombic e-Fe2O3 have been studied by simultaneous Rietveld refinement of X-ray and neutron powder diffraction data in combination with Mossbauer spectroscopy, as well as magnetisation and heat capacity measurements. It has been found that above 150 K the e-Fe2O3 polymorph is a collinear ferrimagnet with the magnetic moments directed along the a axis, while the magnetic ordering below 80 K is characterised by a square-wave incommensurate structure. The transformation between these two states is a second order phase transition and involves subtle structural changes mostly affecting the coordination of the tetrahedral and one of the octahedral Fe sites. The temperature dependence of the e-Fe2O3 magnetic properties is discussed in the light of these results.
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Submitted 28 April, 2006;
originally announced April 2006.
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Magnetoelectric Coupling in epsilon-Fe2O3
Authors:
M. Gich,
C. Frontera,
A. Roig,
E. Molins,
J. Fontcuberta,
N. Bellido,
Ch. Simon,
C. Fleta
Abstract:
Nanoparticles of the ferrimagnetic epsilon-Fe2O3 oxide have been synthesized by sol-gel method. Here, we report on the measurements of the dielectric permittivity as a function of temperature, frequency and magnetic field. It is found that, coinciding with the transition from collinear ferrimagnetic ordering to an incommensurate magnetic state occurring at about 100 K, there is an abrupt change…
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Nanoparticles of the ferrimagnetic epsilon-Fe2O3 oxide have been synthesized by sol-gel method. Here, we report on the measurements of the dielectric permittivity as a function of temperature, frequency and magnetic field. It is found that, coinciding with the transition from collinear ferrimagnetic ordering to an incommensurate magnetic state occurring at about 100 K, there is an abrupt change (about 30 %) of permittivity suggesting the existence of a magnetoelectric coupling in this material. Indeed, magnetic field dependent measurements at 100 K have revealed an increase of the permittivity by about 0.3 % in 6 T. Prospective advantages of epsilon-Fe2O3 as multiferroic material are discussed.
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Submitted 5 September, 2005;
originally announced September 2005.