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Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3
Authors:
B. Kundys,
C. Meny,
M. R. J. Gibbs,
V. Da Costa,
M. Viret,
M. Acosta,
D. Colson,
B. Doudin
Abstract:
We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance i…
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We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.
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Submitted 2 July, 2012;
originally announced July 2012.
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Manipulating ultracold atoms with a reconfigurable nanomagnetic system of domain walls
Authors:
Adam D. West,
Kevin J. Weatherill,
Thomas J. Hayward,
Paul W. Fry,
Thomas Schrefl,
Mike R. J. Gibbs,
Charles S. Adams,
Dan A. Allwood,
Ifan G. Hughes
Abstract:
The divide between the realms of atomic-scale quantum particles and lithographically-defined nanostructures is rapidly being bridged. Hybrid quantum systems comprising ultracold gas-phase atoms and substrate-bound devices already offer exciting prospects for quantum sensors, quantum information and quantum control. Ideally, such devices should be scalable, versatile and support quantum interaction…
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The divide between the realms of atomic-scale quantum particles and lithographically-defined nanostructures is rapidly being bridged. Hybrid quantum systems comprising ultracold gas-phase atoms and substrate-bound devices already offer exciting prospects for quantum sensors, quantum information and quantum control. Ideally, such devices should be scalable, versatile and support quantum interactions with long coherence times. Fulfilling these criteria is extremely challenging as it demands a stable and tractable interface between two disparate regimes. Here we demonstrate an architecture for atomic control based on domain walls (DWs) in planar magnetic nanowires that provides a tunable atomic interaction, manifested experimentally as the reflection of ultracold atoms from a nanowire array. We exploit the magnetic reconfigurability of the nanowires to quickly and remotely tune the interaction with high reliability. This proof-of-principle study shows the practicability of more elaborate atom chips based on magnetic nanowires being used to perform atom optics on the nanometre scale.
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Submitted 5 December, 2011; v1 submitted 2 December, 2011;
originally announced December 2011.
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Design and Characterization of a Field-Switchable Nanomagnetic Atom Mirror
Authors:
T. J. Hayward,
A. D. West,
K. J. Weatherill,
P. J. Curran,
P. W. Fry,
P. M. Fundi,
M. R. J. Gibbs,
T. Schrefl,
C. S. Adams,
I. G. Hughes,
S. J. Bending,
D. A. Allwood
Abstract:
We present a design for a switchable nanomagnetic atom mirror formed by an array of 180° domain walls confined within Ni80Fe20 planar nanowires. A simple analytical model is developed which allows the magnetic field produced by the domain wall array to be calculated. This model is then used to optimize the geometry of the nanowires so as to maximize the reflectivity of the atom mirror. We then des…
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We present a design for a switchable nanomagnetic atom mirror formed by an array of 180° domain walls confined within Ni80Fe20 planar nanowires. A simple analytical model is developed which allows the magnetic field produced by the domain wall array to be calculated. This model is then used to optimize the geometry of the nanowires so as to maximize the reflectivity of the atom mirror. We then describe the fabrication of a nanowire array and characterize its magnetic behavior using magneto-optic Kerr effect magnetometry, scanning Hall probe microscopy and micromagnetic simulations, demonstrating how the mobility of the domain walls allow the atom mirror to be switched "on" and "off" in a manner which would be impossible for conventional designs. Finally, we model the reflection of 87Rb atoms from the atom mirror's surface, showing that our design is well suited for investigating interactions between domain walls and cold atoms.
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Submitted 10 August, 2010;
originally announced August 2010.
