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Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion
Authors:
T. K. Dalui,
B. Das,
C. K. Barman,
P. K. Ghose,
A. Sarma,
S. K. Mahatha,
F. Diekmann,
K. Rossnagel,
S. Majumdar,
A. Alam,
S. Giri
Abstract:
We propose SnBi2Te4 to be a novel candidate material exhibiting temperature (T) mediated transitions between rich topological phases. From a combined theoretical and experimental studies, we find that SnBi2Te4 goes from a low-T topological semimetallic phase to a high-T (room temperature) topological insulating phase via an intermediate topological metallic phase. Single crystals of SnBi2Te4 are c…
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We propose SnBi2Te4 to be a novel candidate material exhibiting temperature (T) mediated transitions between rich topological phases. From a combined theoretical and experimental studies, we find that SnBi2Te4 goes from a low-T topological semimetallic phase to a high-T (room temperature) topological insulating phase via an intermediate topological metallic phase. Single crystals of SnBi2Te4 are characterized by various experimental probes including Synchrotron based X-ray diffraction, magnetoresistance, Hall effect, Seebeck coefficient, magnetization and angle-resolved photoemission spectroscopy (ARPES). X-ray diffraction data confirms an anomalous thermal expansion of the unit cell volume below 100 K, which significantly affects the bulk band structure and hence the transport properties, as confirmed by our density functional theory calculations. Simulated surface states at 15 K agree fairly well with our ARPES data and are found to be robust with varying T. This indirectly supports the experimentally observed paramagnetic singularity in the entire T-range. The proposed coexistence of rich topological phases is a rare occurrence, yet paves a fertile ground to tune various topological phases in a material driven by structural distortion.
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Submitted 14 December, 2022;
originally announced December 2022.
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Anisotropic Magnetodielectric Coupling in Layered Antiferromagnetic FePS$_3$
Authors:
Anudeepa Ghosh,
Magdalena Birowska,
Pradeepta Kumar Ghose,
Miłosz Rybak,
Sujan Maity,
Somsubhra Ghosh,
Bikash Das,
Koushik Dey,
Satyabrata Bera,
Suresh Bhardwaj,
Shibabrata Nandi,
Subhadeep Datta
Abstract:
We report anisotropic magnetodielectric (MD) coupling in layered van der Waals (vdW) antiferromagnetic (AFM) FePS$_3$ (Néel temperature $T_{\mathrm{N}}$ $\sim$ 120K) with perpendicular anisotropy. Above $T_N$, while dielectric response function along \textit{c}-axis shows frequency dependent relaxations, in-plane data is frequency independent and reveals a deviation from phonon-anharmonicity in th…
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We report anisotropic magnetodielectric (MD) coupling in layered van der Waals (vdW) antiferromagnetic (AFM) FePS$_3$ (Néel temperature $T_{\mathrm{N}}$ $\sim$ 120K) with perpendicular anisotropy. Above $T_N$, while dielectric response function along \textit{c}-axis shows frequency dependent relaxations, in-plane data is frequency independent and reveals a deviation from phonon-anharmonicity in the ordered state, thereby implying a connection to spin-phonon coupling known to be indicative of onset of magnetic ordering. At low temperature (below 40 K), atypical anomaly in the dielectric constant is corroborated with temperature dependent DC and AC susceptibility. The magnetodielectric response across this anomaly differs significantly for both, in-plane and out-of-plane cases. We have explained this in terms of preferential orientation of magnetic AFM-z alignment, implied by the in-plane structural anisotropy as confirmed by \textit{ab-initio} calculations. Controlling relative strength of magnetodielectric coupling with magnetic anisotropy opens up a strategy for tracking subtle modifications of structure, such as in-plane anisotropy, with potential application to spintronic technologies.
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Submitted 4 August, 2023; v1 submitted 4 August, 2022;
originally announced August 2022.
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Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal
Authors:
P. K. Ghose,
S. Bandyopadhyay,
T. K. Dalui,
J. -C. Tseng,
J. K. Dey,
R. Tomar,
S. Chakraverty,
S. Majumdar,
I. Dasgupta,
S. Giri
Abstract:
We report bulk Rashba spin splitting (RSS) and associated Dirac surface state in (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$, exhibiting dominant $p$-type conductivity. We argue from the synchrotron diffraction studies that origin of the bulk RSS is due to a structural transition to a non-centrosymmetric $R3m$ phase below $\sim$ 30 K. The Shubnikov-de Haas Van (SdH) oscillations observed in the magnetoresistan…
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We report bulk Rashba spin splitting (RSS) and associated Dirac surface state in (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$, exhibiting dominant $p$-type conductivity. We argue from the synchrotron diffraction studies that origin of the bulk RSS is due to a structural transition to a non-centrosymmetric $R3m$ phase below $\sim$ 30 K. The Shubnikov-de Haas Van (SdH) oscillations observed in the magnetoresistance curves at low temperature and the Landau level fan diagram, as obtained from these oscillations, confirm the presence of nontrivial Dirac surface state. The magnetization data at low temperature exhibit substantial orbital magnetization consistent with the bulk RSS. The existance of both the bulk RSS and Dirac surface states are confirmed by first principles density functional theory calculations. Coexistence of orbital magnetism, bulk RSS, and Dirac surface state is unique for $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$, making it an ideal candidate for spintronic applications.
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Submitted 18 October, 2021;
originally announced October 2021.
