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Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off
Authors:
David Pesquera,
Ekaterina Khestanova,
Massimo Ghidini,
Sen Zhang,
Aidan P. Rooney,
Francesco Maccherozzi,
Patricia Riego,
Saeedeh Farokhipoor,
Jiyeob Kim,
Xavier Moya,
Mary E. Vickers,
Nadia A. Stelmashenko,
Sarah J. Haigh,
Sarnjeet S. Dhesi,
Neil D. Mathur
Abstract:
The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric substrates, whose strain states are modified by applied electric fields. Here we overcome this mismatch problem by depositing an epitaxial film of ferromagnetic La0.7…
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The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric substrates, whose strain states are modified by applied electric fields. Here we overcome this mismatch problem by depositing an epitaxial film of ferromagnetic La0.7Sr0.3MnO3 on a single crystal substrate of well lattice matched SrTiO3 via a film of SrRuO3 that we subsequently dissolved, permitting the transfer of unstrained La0.7Sr0.3MnO3 to a ferroelectric substrate of 0.68Pb(Mg1/3Nb2/3)O3 0.32PbTiO3 in a different crystallographic orientation. Ferroelectric domain switching, and a concomitant ferroelectric phase transition, produced large non volatile changes of magnetization that were mediated by magnetic domain rotations at locations defined by the microstructure - as revealed via high resolution vector maps of magnetization constructed from photoemission electron microscopy data, with contrast from x-ray magnetic circular dichroism. In future, our method may be exploited to control functional properties in dislocation free epitaxial films of any composition.
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Submitted 2 June, 2020; v1 submitted 29 May, 2020;
originally announced June 2020.
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Giant and reversible extrinsic magnetocaloric effects in La0.7Ca0.3MnO3 films due to strain
Authors:
X. Moya,
L. E. Hueso,
F. Maccherozzi,
A. I. Tovstolytkin,
D. I. Podyalovskii,
C. Ducati,
L. C. Phillips,
M. Ghidini,
O. Hovorka,
A. Berger,
M. E. Vickers,
E. Defaÿ,
S. S. Dhesi,
N. D. Mathur
Abstract:
Large thermal changes driven by a magnetic field have been proposed for environmentally friendly energy efficient refrigeration, but only a few materials which suffer hysteresis show these giant magnetocaloric effects. Here we create giant and reversible extrinsic magnetocaloric effects in epitaxial films of the ferromagnetic manganite La0.7Ca0.3MnO3 using strain mediated feedback from BaTiO3 subs…
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Large thermal changes driven by a magnetic field have been proposed for environmentally friendly energy efficient refrigeration, but only a few materials which suffer hysteresis show these giant magnetocaloric effects. Here we create giant and reversible extrinsic magnetocaloric effects in epitaxial films of the ferromagnetic manganite La0.7Ca0.3MnO3 using strain mediated feedback from BaTiO3 substrates near a first-order structural phase transition. Our findings should inspire the discovery of giant magnetocaloric effects in a wide range of magnetic materials, and the parallel development of nanostructured bulk samples for practical applications.
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Submitted 28 September, 2012;
originally announced September 2012.
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Interface effects on an ultrathin Co film in multilayers based on the organic semiconductor Alq3
Authors:
A. A. Sidorenko,
C. Pernechele,
P. Lupo,
M. Ghidini,
M. Solzi,
R. De Renzi,
I. Bergenti,
P. Graziosi,
V. Dediu,
L. Hueso,
A. T. Hindmarch
Abstract:
The effect of the AlOx barrier thickness on magnetic and morphological properties of Ta/Co/(AlOx)/Alq3/Si hybrid structures was systematically studied by means of atomic force microscopy, SQUID magnetometry and nuclear magnetic resonance (NMR). All used techniques pointed out that the barrier thickness of 2 nm is required to obtain a magnetically good cobalt layer on top of Alq3. 59Co NMR measurem…
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The effect of the AlOx barrier thickness on magnetic and morphological properties of Ta/Co/(AlOx)/Alq3/Si hybrid structures was systematically studied by means of atomic force microscopy, SQUID magnetometry and nuclear magnetic resonance (NMR). All used techniques pointed out that the barrier thickness of 2 nm is required to obtain a magnetically good cobalt layer on top of Alq3. 59Co NMR measurements revealed that the AlOx barrier gives rise to the formation of an interface layer with "defective" cobalt favouring growth of "bulk" cobalt with good magnetic properties.
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Submitted 19 October, 2010;
originally announced October 2010.
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Proximity effects induced by a gold layer on La0.67Sr0.33MnO3 thin films
Authors:
R. Bertacco,
S. Brivio,
M. Cantoni,
A. Cattoni,
D. Petti,
M. Finazzi,
F. Ciccacci,
A. A. Sidorenko,
M. Ghidini,
G. Allodi,
R. De Renzi
Abstract:
We report about La0.67Sr0.33MnO3 single crystal manganite thin films in interaction with a gold cap** layer. With respect to uncoated manganite layers of the same thickness, Au-capped 4 nm-thick manganite films reveal a dramatic reduction (about 185 K) of the Curie temperature TC and a lower saturation low-temperature magnetization M0. A sizeable TC reduction (about 60 K) is observed even when…
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We report about La0.67Sr0.33MnO3 single crystal manganite thin films in interaction with a gold cap** layer. With respect to uncoated manganite layers of the same thickness, Au-capped 4 nm-thick manganite films reveal a dramatic reduction (about 185 K) of the Curie temperature TC and a lower saturation low-temperature magnetization M0. A sizeable TC reduction (about 60 K) is observed even when an inert SrTiO3 layer is inserted between the gold film and the 4 nm-thick manganite layer, suggesting that this effect might have an electrostatic origin.
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Submitted 19 June, 2007;
originally announced June 2007.
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The activated torsion oscillation magnetometer
Authors:
G. Asti,
M. Ghidini,
R. Pellicelli,
M. Solzi
Abstract:
The activated torsion oscillation magnetometer exploits the mechanical resonance of a cantilever beam, driven by the torque exerted on the sample by an ac field applied perpendicularly to the film plane. We describe a model for the cantilever dynamics which leads to the calculation of the cantilever dynamic profile and allows the mechanical sensitivity of the instrument to be expressed in terms…
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The activated torsion oscillation magnetometer exploits the mechanical resonance of a cantilever beam, driven by the torque exerted on the sample by an ac field applied perpendicularly to the film plane. We describe a model for the cantilever dynamics which leads to the calculation of the cantilever dynamic profile and allows the mechanical sensitivity of the instrument to be expressed in terms of the minimum electronically detectable displacement. We have developed a capacitance detector of small oscillations which is able to detect displacements of the order of 0.1 nm. We show that sensitivities of the order of 0.5(10-11 Am2 can be in principle achieved. We will subsequently describe the main features of the ATOM prototype which we have built and tested, with particular attention to the design solutions which have been adopted in order to reduce the effects of parasitic vibrations due either to acoustic noise, originating from the ac field coil, or to eddy currents in the capacitor electrodes. The instrument is mounted in a continuous flow cryostat and can work in the 4.2-300 K temperature range. Finally, we will show that our experimental set-up has a second mode of operation, named Torsion Induction Magnetometer (TIM).
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Submitted 23 July, 2002; v1 submitted 8 July, 2002;
originally announced July 2002.