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Dwelling Type Classification for Disaster Risk Assessment Using Satellite Imagery
Authors:
Md Nasir,
Tina Sederholm,
Anshu Sharma,
Sundeep Reddy Mallu,
Sumedh Ranjan Ghatage,
Rahul Dodhia,
Juan Lavista Ferres
Abstract:
Vulnerability and risk assessment of neighborhoods is essential for effective disaster preparedness. Existing traditional systems, due to dependency on time-consuming and cost-intensive field surveying, do not provide a scalable way to decipher warnings and assess the precise extent of the risk at a hyper-local level. In this work, machine learning was used to automate the process of identifying d…
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Vulnerability and risk assessment of neighborhoods is essential for effective disaster preparedness. Existing traditional systems, due to dependency on time-consuming and cost-intensive field surveying, do not provide a scalable way to decipher warnings and assess the precise extent of the risk at a hyper-local level. In this work, machine learning was used to automate the process of identifying dwellings and their type to build a potentially more effective disaster vulnerability assessment system. First, satellite imageries of low-income settlements and vulnerable areas in India were used to identify 7 different dwelling types. Specifically, we formulated the dwelling type classification as a semantic segmentation task and trained a U-net based neural network model, namely TernausNet, with the data we collected. Then a risk score assessment model was employed, using the determined dwelling type along with an inundation model of the regions. The entire pipeline was deployed to multiple locations prior to natural hazards in India in 2020. Post hoc ground-truth data from those regions was collected to validate the efficacy of this model which showed promising performance. This work can aid disaster response organizations and communities at risk by providing household-level risk information that can inform preemptive actions.
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Submitted 15 November, 2022;
originally announced November 2022.
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Effect of Low-Frequency Signal On Nanoscale Memristor Device
Authors:
T. D. Dongale,
S. R. Ghatage
Abstract:
In the present report, we have investigated the effect of the low-frequency signal on nanoscale memristor device. The frequency is varied from 2 Hz to 10 Hz and the corresponding effect on the current-voltage characteristics, time domain state variable, charge-magnetic flux relation, memristance-charge relation, memristance-voltage characteristics and memristance-magnetic flux relation are studied…
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In the present report, we have investigated the effect of the low-frequency signal on nanoscale memristor device. The frequency is varied from 2 Hz to 10 Hz and the corresponding effect on the current-voltage characteristics, time domain state variable, charge-magnetic flux relation, memristance-charge relation, memristance-voltage characteristics and memristance-magnetic flux relation are studied. The results clearly suggested that the frequency of the input stimulus plays an important role in the device dynamics.
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Submitted 13 October, 2017;
originally announced December 2017.
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Time and Frequency Domain Investigation of Selected Memristor based Analog Circuits
Authors:
G. S. Patil,
S. R. Ghatage,
P. K. Gaikwad,
R. K. Kamat,
T. D. Dongale
Abstract:
In this paper, we investigate few memristor-based analog circuits namely the phase shift oscillator, integrator, and differentiator which have been explored numerously using the traditional lumped components. We use LTspice-IV platform for simulation of the above-said circuits. The investigation resorts to the nonlinear dopant drift model of memristor and the window function portrayed in the liter…
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In this paper, we investigate few memristor-based analog circuits namely the phase shift oscillator, integrator, and differentiator which have been explored numerously using the traditional lumped components. We use LTspice-IV platform for simulation of the above-said circuits. The investigation resorts to the nonlinear dopant drift model of memristor and the window function portrayed in the literature for nonlinearity realization. The results of our investigations depict good agreement with the conventional lumped component based phase shift oscillator, integrator, and differentiator circuits. The results are evident to showcase the potential of the memristor as a promising candidate for the next generation analog circuits.
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Submitted 30 March, 2017; v1 submitted 6 February, 2016;
originally announced February 2016.
