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Promoting $p$-based Hall effects by $p$-$d$-$f$ hybridization in Gd-based dichalcogenides
Authors:
Mahmoud Zeer,
Dongwook Go,
Peter Schmitz,
Tom G. Saunderson,
Hao Wang,
Jamal Ghabboun,
Stefan Blügel,
Wulf Wulfhekel,
Yuriy Mokrousov
Abstract:
We conduct a first-principles study of Hall effects in rare-earth dichalcogenides, focusing on monolayers of the H-phase EuX$_2$ and GdX$_2$, where X = S, Se, and Te. Our predictions reveal that all EuX$_2$ and GdX$_2$ systems exhibit high magnetic moments and wide bandgaps. We observe that while in case of EuX$_2$ the $p$ and $f$ states hybridize directly below the Fermi energy, the absence of…
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We conduct a first-principles study of Hall effects in rare-earth dichalcogenides, focusing on monolayers of the H-phase EuX$_2$ and GdX$_2$, where X = S, Se, and Te. Our predictions reveal that all EuX$_2$ and GdX$_2$ systems exhibit high magnetic moments and wide bandgaps. We observe that while in case of EuX$_2$ the $p$ and $f$ states hybridize directly below the Fermi energy, the absence of $f$ and $d$ states of Gd at the Fermi energy results in $p$-like spin-polarized electronic structure of GdX$_2$, which mediates $p$-based magnetotransport. Notably, these systems display significant anomalous, spin, and orbital Hall conductivities. We find that in GdX$_2$ the strength of correlations controls the relative position of $p$, $d$ and $f$-states and their hybridization which has a crucial impact on $p$-state polarization and the anomalous Hall effect, but not the spin and orbital Hall effect. Moreover, we find that the application of strain can significantly modify the electronic structure of the monolayers, resulting in quantized charge, spin and orbital transport in GdTe$_2$ via a strain-mediated orbital inversion mechanism taking place at the Fermi energy. Our findings suggest that rare-earth dichalcogenides hold promise as a platform for topological spintronics and orbitronics.
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Submitted 16 August, 2023;
originally announced August 2023.
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Spin and orbital transport in rare earth dichalcogenides: The case of EuS$_2$
Authors:
Mahmoud Zeer,
Dongwook Go,
Johanna P. Carbone,
Tom G. Saunderson,
Matthias Redies,
Mathias Kläui,
Jamal Ghabboun,
Wulf Wulfhekel,
Stefan Blügel,
Yuriy Mokrousov
Abstract:
We perform first-principles calculations to determine the electronic, magnetic and transport properties of rare-earth dichalcogenides taking a monolayer of the H-phase EuS$_2$ as a representative. We predict that the H-phase of the EuS$_2$ monolayer exhibits a half-metallic behavior upon do** with a very high magnetic moment. We find that the electronic structure of EuS$_2$ is very sensitive to…
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We perform first-principles calculations to determine the electronic, magnetic and transport properties of rare-earth dichalcogenides taking a monolayer of the H-phase EuS$_2$ as a representative. We predict that the H-phase of the EuS$_2$ monolayer exhibits a half-metallic behavior upon do** with a very high magnetic moment. We find that the electronic structure of EuS$_2$ is very sensitive to the value of Coulomb repulsion $U$, which effectively controls the degree of hybridization between Eu-$f$ and S-$p$ states. We further predict that the non-trivial electronic structure of EuS$_2$ directly results in a pronounced anomalous Hall effect with non-trivial band topology. Moreover, while we find that the spin Hall effect closely follows the anomalous Hall effect in the system, the orbital complexity of the system results in a very large orbital Hall effect, whose properties depend very sensitively on the strength of correlations. Our findings thus promote rare-earth based dichalcogenides as a promising platform for topological spintronics and orbitronics.
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Submitted 26 January, 2022;
originally announced January 2022.
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Comparative Electrostatic Force Microscopy of Tetra- and Intra-Molecular G4-DNA
Authors:
Gideon I. Livshits,
Jamal Ghabboun,
Natalia Borovok,
Alexander B. Kotlyar,
Danny Porath
Abstract:
Two forms of G4-DNA, with parallel and pairwise anti-parallel strands, are studied using atomic force microscopy. The directionality of the strands affects the molecules' structural properties (different height and length) and their electrical polarizability. Parallel G4-DNA is twice as polarizable as anti-parallel G4-DNA, suggesting it is a better electrical wire for bio-nanoelectronics.
Two forms of G4-DNA, with parallel and pairwise anti-parallel strands, are studied using atomic force microscopy. The directionality of the strands affects the molecules' structural properties (different height and length) and their electrical polarizability. Parallel G4-DNA is twice as polarizable as anti-parallel G4-DNA, suggesting it is a better electrical wire for bio-nanoelectronics.
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Submitted 20 September, 2014;
originally announced October 2014.
