Showing 1–50 of 52 results for author: Gershenson, M E

Phase Diffusion in Low-$E_J$ Josephson Junctions at milli-Kelvin Temperatures

Authors: Wen-Sen Lu, Konstantin Kalashnikov, Plamen Kamenov, Thomas J. DiNapoli, Michael E. Gershenson

Abstract: Josephson junctions (JJs) with Josephson energy $E_J \lesssim 1K$ are widely employed as non-linear elements in superconducting circuits for quantum computing, operating at milli-Kelvin temperatures. Here we experimentally study incoherent phase slips (IPS) in low-$E_J$ Aluminum-based JJs at $T<0.2K$, where the IPS become the dominant source of dissipation. We observed strong suppression of the cr… ▽ More Josephson junctions (JJs) with Josephson energy $E_J \lesssim 1K$ are widely employed as non-linear elements in superconducting circuits for quantum computing, operating at milli-Kelvin temperatures. Here we experimentally study incoherent phase slips (IPS) in low-$E_J$ Aluminum-based JJs at $T<0.2K$, where the IPS become the dominant source of dissipation. We observed strong suppression of the critical (switching) current and a very rapid growth of the zero-bias resistance with decreasing Josephson energy below $E_J \sim 1K$. This behavior is attributed to the IPSs whose rate exponentially increases with decreasing the ratio $E_J/T$. Our observations are in line with other data reported in literature. With further improvement of coherence of superconducting qubits, the observed dissipation from IPS might limit the performance of qubits based on low-$E_J$ junctions. △ Less

Submitted 20 December, 2021; originally announced December 2021.

Comments: 10 pages, 6 figures

Journal ref: Electronics 2023, 12, 416

Magnetic-field-driven redistribution between extended and localized electronic states in high-mobility Si MOSFETs at low temperatures

Authors: V. M. Pudalov, M. E. Gershenson

Abstract: In the study of oscillatory electron transport in high-mobility Si MOSFETs at low temperatures we observed two correlated effects in weak in-plane magnetic fields: a steep decrease of the renormalized magnetic susceptibility $χ^*(H)$ and an increase of the concentration of mobile carriers $n(H)$. We suggest a phenomenological model of the magnetic field driven redistribution between the extended a… ▽ More In the study of oscillatory electron transport in high-mobility Si MOSFETs at low temperatures we observed two correlated effects in weak in-plane magnetic fields: a steep decrease of the renormalized magnetic susceptibility $χ^*(H)$ and an increase of the concentration of mobile carriers $n(H)$. We suggest a phenomenological model of the magnetic field driven redistribution between the extended and localized electronic states that qualitatively explains both effects. We argue that the redistribution is mainly caused by magnetization of the large-spin localized states with energies close to the Fermi energy $E_F$, coexisting with the majority Fermi liquid state. Our findings also resolve a long-standing disagreement between the experimental data on $χ^*$ obtained in weak ($H \sim k_BT/μ_B$) and strong ($H \sim E_F/gμ_B$) magnetic fields. △ Less

Submitted 3 July, 2021; originally announced July 2021.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. B 104, 035407 (2021)

A Parity-Protected Superconductor-Semiconductor Qubit

Authors: T. W. Larsen, M. E. Gershenson, L. Casparis, A. Kringhøj, N. J. Pearson, R. P. G. McNeil, F. Kuemmeth, P. Krogstrup, K. D. Petersson, C. M. Marcus

Abstract: Coherence of superconducting qubits can be improved by implementing designs that protect the parity of Cooper pairs on superconducting islands. Here, we introduce a parity-protected qubit based on voltage-controlled semiconductor nanowire Josephson junctions, taking advantage of the higher harmonic content in the energy-phase relation of few-channel junctions. A symmetric interferometer formed by… ▽ More Coherence of superconducting qubits can be improved by implementing designs that protect the parity of Cooper pairs on superconducting islands. Here, we introduce a parity-protected qubit based on voltage-controlled semiconductor nanowire Josephson junctions, taking advantage of the higher harmonic content in the energy-phase relation of few-channel junctions. A symmetric interferometer formed by two such junctions, gate-tuned into balance and frustrated by a half-quantum of applied flux, yields a cos(2φ) Josephson element, reflecting coherent transport of pairs of Cooper pairs. We demonstrate that relaxation of the qubit can be suppressed tenfold by tuning into the protected regime. △ Less

Submitted 31 July, 2020; v1 submitted 8 April, 2020; originally announced April 2020.

Report number: NBI QDEV 2020

Journal ref: Phys. Rev. Lett. 125, 056801 (2020)

Bifluxon: Fluxon-Parity-Protected Superconducting Qubit

Authors: Konstantin Kalashnikov, Wen Ting Hsieh, Wenyuan Zhang, Wen-Sen Lu, Plamen Kamenov, Agustin Di Paolo, Alexandre Blais, Michael E. Gershenson, Matthew Bell

Abstract: We have developed and characterized a symmetry-protected superconducting qubit that offers simultaneous exponential suppression of energy decay from charge and flux noise, and dephasing from flux noise. The qubit consists of a Cooper-pair box (CPB) shunted by a superinductor, thus forming a superconducting loop. Provided the offset charge on the CPB island is an odd number of electrons, the qubit… ▽ More We have developed and characterized a symmetry-protected superconducting qubit that offers simultaneous exponential suppression of energy decay from charge and flux noise, and dephasing from flux noise. The qubit consists of a Cooper-pair box (CPB) shunted by a superinductor, thus forming a superconducting loop. Provided the offset charge on the CPB island is an odd number of electrons, the qubit potential corresponds to that of a $\cos φ/ 2$ Josephson element, preserving the parity of fluxons in the loop via Aharonov-Casher interference. In this regime, the logical-state wavefunctions reside in disjoint regions of phase space, thereby ensuring the protection against energy decay. By switching the protection on, we observed a ten-fold increase of the decay time, reaching up to $100 μ\mathrm{s}$. Though the qubit is sensitive to charge noise, the sensitivity is much reduced in comparison with the charge qubit, and the charge-noise-induced dephasing time of the current device exceeds $1 μ\mathrm{s}$. Implementation of the full dephasing protection can be achieved in the next-generation devices by combining several $\cos φ/ 2$ Josephson elements in a small array. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Comments: 13 pages, 13 figures

Journal ref: PRX Quantum 1, 010307 (2020)

Granular Aluminum Meandered Superinductors for Quantum Circuits

Authors: Plamen Kamenov, Wen-Sen Lu, Konstantin Kalashnikov, Thomas DiNapoli, Matthew T. Bell, Michael E. Gershenson

Abstract: We have designed superinductors made of strongly disordered superconductors for implementation in "hybrid" superconducting quantum circuits. The superinductors have been fabricated as meandered nanowires made of granular Aluminum films. Optimization of the device geometry enabled realization of superinductors with the inductance $\sim 1 μH$ and the self-resonance frequency over 3 GHz. These compac… ▽ More We have designed superinductors made of strongly disordered superconductors for implementation in "hybrid" superconducting quantum circuits. The superinductors have been fabricated as meandered nanowires made of granular Aluminum films. Optimization of the device geometry enabled realization of superinductors with the inductance $\sim 1 μH$ and the self-resonance frequency over 3 GHz. These compact superinductors are attractive for a wide range of applications, from superconducting circuits for quantum computing to microwave elements of cryogenic parametric amplifiers and kinetic-inductance photon detectors. △ Less

Submitted 27 April, 2020; v1 submitted 2 October, 2019; originally announced October 2019.

Comments: 5 pages, 4 figures; accepted manuscript, to be published in Phys. Rev. Appl

Journal ref: Phys. Rev. Applied 13, 054051 (2020)

Josephson Ladders as a Model System for 1D Quantum Phase Transitions

Authors: M. T. Bell, B. Doucot, M. E. Gershenson, L. B. Ioffe, A. Petkovic

Abstract: We propose a novel platform for the study of quantum phase transitions in one dimension (1D QPT). The system consists of a specially designed chain of asymmetric SQUIDs; each SQUID contains several Josephson junctions with one junction shared between the nearest-neighbor SQUIDs.We develop the theoretical description of the low energy part of the spectrum. In particular, we show that the system exh… ▽ More We propose a novel platform for the study of quantum phase transitions in one dimension (1D QPT). The system consists of a specially designed chain of asymmetric SQUIDs; each SQUID contains several Josephson junctions with one junction shared between the nearest-neighbor SQUIDs.We develop the theoretical description of the low energy part of the spectrum. In particular, we show that the system exhibits the quantum phase transition of Ising type. In the vicinity of the transition the low energy excitations of the system can be described by Majorana fermions. This allow us to compute the matrix elements of the physical perturbations in the low energy sector. In the microwave experiments with this system, we explored the phase boundaries between the ordered and disordered phases and the critical behavior of the system's low-energy modes close to the transition. Due to the flexible chain design and control of the parameters of individual Josephson junctions, future experiments will be able to address the effects of non-integrability and disorder on the 1D QPT. △ Less

Submitted 1 December, 2018; v1 submitted 27 November, 2018; originally announced November 2018.

Comments: 12 pages, 7 figures

Journal ref: Comptes Rendus Physique Volume 19 Issue 6, pg. 484-497 (2018)

Probing spin susceptibility of a correlated two-dimensional electron system by transport and magnetization measurements

Authors: V. M. Pudalov, A. Yu. Kuntsevich, M. E. Gershenson, I. S. Burmistrov, M. Reznikov

Abstract: We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility $χ^*$ from the Shubnikov-de Haas oscillations in crossed magnetic fields and (ii) thermodynamic susceptibility $χ_{\rm T}$ sensitive to all the electrons in the layer. Both $χ^*$ and $χ_{\rm T}$ are strongly enhance… ▽ More We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility $χ^*$ from the Shubnikov-de Haas oscillations in crossed magnetic fields and (ii) thermodynamic susceptibility $χ_{\rm T}$ sensitive to all the electrons in the layer. Both $χ^*$ and $χ_{\rm T}$ are strongly enhanced with lowering the electron density in the metallic phase. However, there is no sign of divergency of either quantity at the density of the metal-insulator transition $n_c$. Moreover, the value of $χ_{\rm T}$, which can be measured across the transition down to very low densities deep in the insulating phase, increases with density at $n<n_c$, as expected. In the absence of magnetic field, we found the temperature dependence of $χ^*$ to be consistent with Fermi-liquid-based predictions, and to be much weaker than the power-law, predicted by non-Fermi-liquid models. We attribute a much stronger temperature dependence of $χ_{\rm T}$ to localized spin droplets. In strong enough in-plane magnetic field, we found the temperature dependence of $χ^*$ to be stronger than that expected for the Fermi liquid interaction corrections. △ Less

Submitted 8 October, 2018; originally announced October 2018.

Comments: 16 pages, 13 figures

Journal ref: Phys. Rev. B 98, 155109 (2018)

Microresonators fabricated from high-kinetic-inductance Aluminum films

Authors: Wenyuan Zhang, K. Kalashnikov, Wen-Sen Lu, P. Kamenov, T. DiNapoli, M. E. Gershenson

Abstract: We have studied superconducting coplanar-waveguide (CPW) resonators fabricated from disordered (granular) films of Aluminum. Very high kinetic inductance of these films, inherent to disordered materials, allows us to implement ultra-short (200 $μ$m at a 5GHz resonance frequency) and high-impedance (up to 5 k$Ω$) half-wavelength resonators. We have shown that the intrinsic losses in these resonator… ▽ More We have studied superconducting coplanar-waveguide (CPW) resonators fabricated from disordered (granular) films of Aluminum. Very high kinetic inductance of these films, inherent to disordered materials, allows us to implement ultra-short (200 $μ$m at a 5GHz resonance frequency) and high-impedance (up to 5 k$Ω$) half-wavelength resonators. We have shown that the intrinsic losses in these resonators at temperatures $\lesssim 250$ mK are limited by resonator coupling to two-level systems in the environment. The demonstrated internal quality factors are comparable with those for CPW resonators made of conventional superconductors. High kinetic inductance and well-understood losses make these disordered Aluminum resonators promising for a wide range of microwave applications which include kinetic inductance photon detectors and superconducting quantum circuits. △ Less

Submitted 30 June, 2018; originally announced July 2018.

Journal ref: Phys. Rev. Applied 11, 011003 (2019)

Josephson Metamaterial with a widely tunable positive/negative Kerr constant

Authors: Wenyuan Zhang, W. Huang, M. E. Gershenson, M. T. Bell

Abstract: We report on the microwave characterization of a novel one-dimensional Josephson metamaterial composed of a chain of asymmetric superconducting quantum interference devices (SQUIDs) with nearest-neighbor coupling through common Josephson junctions. This metamaterial demonstrates a strong Kerr nonlinearity, with a Kerr constant tunable over a wide range, from positive to negative values, by a magne… ▽ More We report on the microwave characterization of a novel one-dimensional Josephson metamaterial composed of a chain of asymmetric superconducting quantum interference devices (SQUIDs) with nearest-neighbor coupling through common Josephson junctions. This metamaterial demonstrates a strong Kerr nonlinearity, with a Kerr constant tunable over a wide range, from positive to negative values, by a magnetic flux threading the SQUIDs. The experimental results are in good agreement with the theory of nonlinear effects in Josephson chains. The metamaterial is very promising as an active medium for Josephson traveling-wave parametric amplifiers; its use facilitates phase matching in a four-wave mixing process for efficient parametric gain. △ Less

Submitted 21 July, 2017; originally announced July 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Applied 8, 051001 (2017)

Spectroscopic Evidence of the Aharonov-Casher effect in a Cooper Pair Box

Authors: M. T. Bell, W. Zhang, L. B. Ioffe, M. E. Gershenson

Abstract: We have observed the effect of the Aharonov-Casher (AC) interference on the spectrum of a superconducting system containing a symmetric Cooper pair box (CPB) and a large inductance. By varying the charge $n_{g}$ induced on the CPB island, we observed oscillations of the device spectrum with the period $Δn_{g}=2e$. These oscillations are attributed to the charge-controlled AC interference between t… ▽ More We have observed the effect of the Aharonov-Casher (AC) interference on the spectrum of a superconducting system containing a symmetric Cooper pair box (CPB) and a large inductance. By varying the charge $n_{g}$ induced on the CPB island, we observed oscillations of the device spectrum with the period $Δn_{g}=2e$. These oscillations are attributed to the charge-controlled AC interference between the fluxon tunneling processes in the CPB Josephson junctions. Total suppression of the tunneling (complete destructive interference) has been observed for the charge $n_{g}=e(2n+1)$. The CPB in this regime represents the $4π$-periodic Josephson element, which can be used for the development of the parity-protected superconducting qubits. △ Less

Submitted 15 March, 2016; v1 submitted 21 April, 2015; originally announced April 2015.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Lett. 116, 107002 (2016)

Probing Electron Interactions in a Two-Dimensional System by Quantum Magneto-Oscillations

Authors: V. M. Pudalov, M. E. Gershenson, H. Kojima

Abstract: We have experimentally studied the renormalized effective mass m* and Dingle temperature T_D in two spin subbands with essentially different electron populations. Firstly, we found that the product (m*T_D) that determines dam** of quantum oscillations, to the first approximation, is the same in the majority and minority subbands even at the spin polarization degree as high as 66\%. This result c… ▽ More We have experimentally studied the renormalized effective mass m* and Dingle temperature T_D in two spin subbands with essentially different electron populations. Firstly, we found that the product (m*T_D) that determines dam** of quantum oscillations, to the first approximation, is the same in the majority and minority subbands even at the spin polarization degree as high as 66\%. This result confirms the theoretical predictions that the interaction takes place at high energies ~ E_F rather than within a narrow strip of energies E_F\pm k_BT. Secondly, to the next approximation, we revealed a difference in the dam** factor of the two spin subbands, which causes skewness of the oscillation lineshape. In the absence of the in-plane magnetic field, the dam** factor (m*T_D) is systematically smaller in the spin-majority subband. The difference, quantified with the skew factor γ= (T_{D\downarrow}-T_{D\uparrow})/2T_{D0} can be as large as 20%. The skew factor tends to decrease as B_\parallel or temperature grow, or perpendicular field decreases; for low electron densities and high in-plane fields the skew factor even changes sign. Finally, we compared the temperature and magnetic field dependencies of the magneto-oscillations amplitude with predictions of the interaction correction theory, and found, besides some qualitative similarities, several quantitative and qualitative differences. To explain qualitatively our results, we suggested an empirical model that assumes the existence of easily magnetized triplet scatterers on the Si/SiO_2 interface. △ Less

Submitted 19 August, 2014; originally announced August 2014.

Comments: 20 pages, 21 figures

Protected Josephson Rhombi Chains

Authors: Matthew T. Bell, Joshua Paramanandam, Lev B. Ioffe, Michael E. Gershenson

Abstract: We have studied the low-energy excitations in a minimalistic protected Josephson circuit which contains two basic elements (rhombi) characterized by the $π$ periodicity of the Josephson energy. Novel design of these elements, which reduces their sensitivity to the offset charge fluctuations, has been employed. We have observed that the life time $T_{1}$ of the first excited state of this quantum c… ▽ More We have studied the low-energy excitations in a minimalistic protected Josephson circuit which contains two basic elements (rhombi) characterized by the $π$ periodicity of the Josephson energy. Novel design of these elements, which reduces their sensitivity to the offset charge fluctuations, has been employed. We have observed that the life time $T_{1}$ of the first excited state of this quantum circuit in the protected regime is increased up to $70μs$, a factor of $\sim100$ longer than that in the unprotected state. The quality factor $ω_{01}T_{1}$ of this qubit exceeds $10^{6}$ . Our results are in agreement with theoretical expectations; they demonstrate the feasibility of symmetry protection in the rhombi-based qubits fabricated with existing technology. △ Less

Submitted 25 November, 2013; originally announced November 2013.

Comments: 5 pages, 4 figures, Supplementary Materials

Journal ref: Phys. Rev. Lett. 112, 167001 (2014)

Energy-resolved detection of single infrared photons with λ = 8 μm using a superconducting microbolometer

Authors: Boris S. Karasik, Sergey V. Pereverzev, Alexander Soibel, Daniel F. Santavicca, Daniel E. Prober, David Olaya, Michael E. Gershenson

Abstract: We report on the detection of single photons with λ = 8 μm using a superconducting hot-electron microbolometer. The sensing element is a titanium transition-edge sensor with a volume ~ 0.1 μm^3 fabricated on a silicon substrate. Poisson photon counting statistics including simultaneous detection of 3 photons was observed. The width of the photon-number peaks was 0.11 eV, 70% of the photon energy,… ▽ More We report on the detection of single photons with λ = 8 μm using a superconducting hot-electron microbolometer. The sensing element is a titanium transition-edge sensor with a volume ~ 0.1 μm^3 fabricated on a silicon substrate. Poisson photon counting statistics including simultaneous detection of 3 photons was observed. The width of the photon-number peaks was 0.11 eV, 70% of the photon energy, at 50-100 mK. This achieved energy resolution is one of the best figures reported so far for superconducting devices. Such devices can be suitable for single photon calorimetric spectroscopy throughout the mid-infrared and even the far-infrared. △ Less

Submitted 20 July, 2012; v1 submitted 9 July, 2012; originally announced July 2012.

Comments: 17 pages, 5 figures. Accepted to Applied Physics Letters

Journal ref: Applied Physics Letters 101, 052601 (2012)

Quantum Superinductor with Tunable Non-Linearity

Authors: M. T. Bell, I. A. Sadovskyy, L. B. Ioffe, A. Yu. Kitaev, M. E. Gershenson

Abstract: We report on the realization of a superinductor, a dissipationless element whose microwave impedance greatly exceeds the resistance quantum. The design of the superinductor, implemented as a ladder of nanoscale Josephson junctions, enables tuning of the inductance and its nonlinearity by a weak magnetic field. The Rabi decay time of the superinductor-based qubit exceeds 1 microsecond. The high kin… ▽ More We report on the realization of a superinductor, a dissipationless element whose microwave impedance greatly exceeds the resistance quantum. The design of the superinductor, implemented as a ladder of nanoscale Josephson junctions, enables tuning of the inductance and its nonlinearity by a weak magnetic field. The Rabi decay time of the superinductor-based qubit exceeds 1 microsecond. The high kinetic inductance and strong nonlinearity offer new types of functionality, including the development of qubits protected from both flux and charge noises, fault tolerant quantum computing, and high-impedance isolation for electrical current standards based on Bloch oscillations. △ Less

Submitted 18 September, 2012; v1 submitted 1 June, 2012; originally announced June 2012.

Comments: text 4 pages, supplementary materials 6 pages

Journal ref: Phys. Rev. Lett. 109, 137003 (2012)

Magnetic Field Driven Quantum Phase Transitions in Josephson Arrays

Authors: J. Paramanandam, M. T. Bell, L. B. Ioffe, M. E. Gershenson

Abstract: We have studied the magnetic-field-driven quantum phase transitions in Josephson junction arrays with a large coordination number. The characteristic energies were extracted in both the superconducting and insulating phases by integrating the current-voltage characteristics over a voltage range 2eV\leqk_B T. For the arrays with a relatively strong Josephson coupling, we observed duality between th… ▽ More We have studied the magnetic-field-driven quantum phase transitions in Josephson junction arrays with a large coordination number. The characteristic energies were extracted in both the superconducting and insulating phases by integrating the current-voltage characteristics over a voltage range 2eV\leqk_B T. For the arrays with a relatively strong Josephson coupling, we observed duality between the energies in the superconducting and insulating phases. The arrays with a weaker Josephson coupling demonstrate an intermediate, "bad metal" regime in weak magnetic fields; this observation underlines the importance of vortex pinning at large scales and, presumably, emergent inhomogeneity in the presence of strong offset charge disorder. △ Less

Submitted 30 December, 2011; v1 submitted 29 December, 2011; originally announced December 2011.

Comments: 11 pages, 4 figures

Microwave Spectroscopy of a Cooper-Pair Transistor Coupled to a Lumped-Element Resonator

Authors: Matthew T. Bell, Lev B. Ioffe, Michael E. Gershenson

Abstract: We have studied the microwave response of a single Cooper-pair transistor (CPT) coupled to a lumped-element microwave resonator. The resonance frequency of this circuit, $f_{r}$, was measured as a function of the charge $n_{g}$ induced on the CPT island by the gate electrode, and the phase difference across the CPT, $φ_{B}$, which was controlled by the magnetic flux in the superconducting loop con… ▽ More We have studied the microwave response of a single Cooper-pair transistor (CPT) coupled to a lumped-element microwave resonator. The resonance frequency of this circuit, $f_{r}$, was measured as a function of the charge $n_{g}$ induced on the CPT island by the gate electrode, and the phase difference across the CPT, $φ_{B}$, which was controlled by the magnetic flux in the superconducting loop containing the CPT. The observed $f_{r}(n_{g},φ_{B})$ dependences reflect the variations of the CPT Josephson inductance with $n_{g}$ and $φ_{B}$ as well as the CPT excitation when the microwaves induce transitions between different quantum states of the CPT. The results are in excellent agreement with our simulations based on the numerical diagonalization of the circuit Hamiltonian. This agreement over the whole range of $n_{g}$ and $φ_{B}$ is unexpected, because the relevant energies vary widely, from 0.1K to 3K. The observed strong dependence $f_{r}(n_{g},φ_{B})$ near the resonance excitation of the CPT provides a tool for sensitive charge measurements. △ Less

Submitted 9 November, 2011; originally announced November 2011.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 86, 144512 (2012)

Energy resolution of terahertz single-photon-sensitive bolometric detectors

Authors: D. F. Santavicca, B. Reulet, B. S. Karasik, S. V. Pereverzev, D. Olaya, M. E. Gershenson, L. Frunzio, D. E. Prober

Abstract: We report measurements of the energy resolution of ultra-sensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avo… ▽ More We report measurements of the energy resolution of ultra-sensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 terahertz, near the predicted value due to intrinsic thermal fluctuation noise. △ Less

Submitted 1 March, 2010; v1 submitted 5 June, 2009; originally announced June 2009.

Comments: 11 pages (double-spaced), 5 figures; minor revisions

Journal ref: Appl. Phys. Lett. 96, 083505 (2010)

Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers

Authors: N. N. Klimov, D. A. Knyazev, O. E. Omel'yanovskii, V. M. Pudalov, H. Kojima, M. E. Gershenson

Abstract: We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential f… ▽ More We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential for comparison with the theory, such as the intervalley scattering time and valley splitting, have been measured or evaluated in independent experiments. The observed behavior of the conductivity, including its quasi-linear increase with decreasing T down to ~0.4K and its downturn at lower temperatures, is in agreement with the theory. The values of the Fermi- liquid parameter obtained from the comparison agree with the corresponding values extracted from the analysis of Shubnikov-de Haas oscillations based on the theory of magnetooscillations in interacting 2D systems. △ Less

Submitted 16 September, 2008; originally announced September 2008.

Comments: 26 pages, 5 color figures

Journal ref: Phys.Rev. B 78, 195308 (2008)

Superconducting Nanocircuits for Topologically Protected Qubits

Authors: Sergey Gladchenko, David Olaya, Eva Dupont-Ferrier, Benoit Doucot, Lev B. Ioffe, Michael E. Gershenson

Abstract: For successful realization of a quantum computer, its building blocks (qubits) should be simultaneously scalable and sufficiently protected from environmental noise. Recently, a novel approach to the protection of superconducting qubits has been proposed. The idea is to prevent errors at the "hardware" level, by building a fault-free (topologically protected) logical qubit from "faulty" physical… ▽ More For successful realization of a quantum computer, its building blocks (qubits) should be simultaneously scalable and sufficiently protected from environmental noise. Recently, a novel approach to the protection of superconducting qubits has been proposed. The idea is to prevent errors at the "hardware" level, by building a fault-free (topologically protected) logical qubit from "faulty" physical qubits with properly engineered interactions between them. It has been predicted that the decoupling of a protected logical qubit from local noises would grow exponentially with the number of physical qubits. Here we report on the proof-of-concept experiments with a prototype device which consists of twelve physical qubits made of nanoscale Josephson junctions. We observed that due to properly tuned quantum fluctuations, this qubit is protected against magnetic flux variations well beyond linear order, in agreement with theoretical predictions. These results demonstrate the feasibility of topologically protected superconducting qubits. △ Less

Submitted 15 February, 2008; originally announced February 2008.

Comments: 25 pages, 5 figures

Journal ref: Nature Physics 5, 48-53 (2009)

Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers

Authors: M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson, V. Podzorov*

Abstract: Molecular self-assembly has been extensively used for surface modification of metals and oxides for a variety of applications, including molecular and organic electronics. One of the goals of this research is to learn how the electronic properties of these surfaces can be modified by self-assembled monolayers (SAM). Here, we demonstrate a new type of molecular self-assembly: the growth of organo… ▽ More Molecular self-assembly has been extensively used for surface modification of metals and oxides for a variety of applications, including molecular and organic electronics. One of the goals of this research is to learn how the electronic properties of these surfaces can be modified by self-assembled monolayers (SAM). Here, we demonstrate a new type of molecular self-assembly: the growth of organosilane SAMs at the surface of organic semiconductors, which results in a dramatic increase of the surface conductivity of organic materials. For organosilane molecules with a large dipole moment, SAM-induced surface conductivity of organic molecular crystals approaches 10^-5 S per square, which is comparable to the highest conductivity realized in organic field-effect transistors (OFETs) at ultra-high densities of charge carriers. SAM-functionalized organic surfaces are fully accessible to the environment which makes them very attractive for sensing applications. We have observed that the interaction of vapors of polar molecules with SAM-functionalized organic semiconductors results in a fast and reversible change of the conductivity, proportional to the pressure of an analyte vapor. △ Less

Submitted 9 October, 2007; originally announced October 2007.

Light Quasiparticles Dominate Electronic Transport in Molecular Crystal Field-Effect Transistors

Authors: Z. Q. Li, V. Podzorov, N. Sai, M. C. Martin, M. E. Gershenson, M. Di Ventra, D. N. Basov

Abstract: We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors at room temperature are governed by light quasiparticles in molecular orbital bands with the effective masses m* comparable to free electron mass. Furthermore,… ▽ More We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors at room temperature are governed by light quasiparticles in molecular orbital bands with the effective masses m* comparable to free electron mass. Furthermore, the m* values inferred from our experiments are in agreement with those determined from band structure calculations. These findings reveal no evidence for prominent polaronic effects, which is at variance with the common beliefs of polaron formation in molecular solids. △ Less

Submitted 10 July, 2007; originally announced July 2007.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 99, 016403 (2007)

Intervalley scattering and weak localization in Si-based two-dimensional structures

Authors: A. Yu. Kuntsevich, N. N. Klimov, S. A. Tarasenko, N. S. Averkiev, V. M. Pudalov, H. Kojima, M. E. Gershenson

Abstract: We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction o… ▽ More We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction of the phase breaking time tau_phi and the intervalley scattering time tau_v. The temperature dependences tau_phi(T) for all studied structures are in good agreement with the theory of electron-electron interaction effects in two-dimensional systems. The intervalley scattering is elastic and rather strong: tau_v is typically only an order of magnitude greater than the transport time, tau. It is found that the intervalley scattering rate is temperature-independent and the ratio tau_v/tau decreases with increasing the electron density. These observations suggest that the roughness of the Si-SiO2 interface plays the major role in intervalley scattering. △ Less

Submitted 25 January, 2007; originally announced January 2007.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 75, 195330 (2007)

Primary Photoexcitations and the Origin of the Photocurrent in Rubrene Single Crystals

Authors: Hikmat Najafov, Ivan Biaggio, Vitaly Podzorov, Matt Calhoun, Michael E. Gershenson

Abstract: By simultaneously measuring the excitation spectra of transient luminescence and transient photoconductivity after picosecond pulsed excitation in rubrene single crystals we show that free excitons are photoexcited starting at photon energies above 2.0 eV. We observe a competition between photoexcitation of free excitons and photoexcitation into vibronic states that subsequently decays into free… ▽ More By simultaneously measuring the excitation spectra of transient luminescence and transient photoconductivity after picosecond pulsed excitation in rubrene single crystals we show that free excitons are photoexcited starting at photon energies above 2.0 eV. We observe a competition between photoexcitation of free excitons and photoexcitation into vibronic states that subsequently decays into free carriers, while molecular excitons are instead formed predominantly through the free exciton. At photon energies below 2.25 eV, free charge carriers are only created through a long-lived intermediate state with a lifetime of up to 0.1 ms and no free carriers appear during the exciton lifetime. △ Less

Submitted 27 October, 2005; originally announced October 2005.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 96, 056604 (2006)

Microwave-Induced Dephasing in One-Dimensional Metal Wires

Authors: J. Wei, S. Pereverzev, M. E. Gershenson

Abstract: We report on the effect of monochromatic microwave (MW) radiation on the weak localization corrections to the conductivity of quasi-one-dimensional (1D) silver wires. Due to the improved electron cooling in the wires, the MW-induced dephasing was observed without a concomitant overheating of electrons over wide ranges of the MW power $P_{MW}$ and frequency $f$. The observed dependences of the co… ▽ More We report on the effect of monochromatic microwave (MW) radiation on the weak localization corrections to the conductivity of quasi-one-dimensional (1D) silver wires. Due to the improved electron cooling in the wires, the MW-induced dephasing was observed without a concomitant overheating of electrons over wide ranges of the MW power $P_{MW}$ and frequency $f$. The observed dependences of the conductivity and MW-induced dephasing rate on $P_{MW}$ and $f$ are in agreement with the theory by Altshuler, Aronov, and Khmelnitsky \cite{Alt81}. Our results suggest that in the low-temperature experiments with 1D wires, saturation of the temperature dependence of the dephasing time can be caused by an MW electromagnetic noise with a sub-pW power. △ Less

Submitted 29 January, 2006; v1 submitted 8 August, 2005; originally announced August 2005.

Comments: 4 pages with 4 figures, paper revised, accepted by Phys Rev Lett

Hall effect in the accumulation layers on the surface of organic semiconductors

Authors: V. Podzorov, E. Menard, J. A. Rogers, M. E. Gershenson

Abstract: We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measureme… ▽ More We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, n_H, coincides with the density n calculated using the gate-channel capacitance, and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive band-like motion of field-induced charge carriers between the trap** events. △ Less

Submitted 29 July, 2005; originally announced August 2005.

Comments: 11 pages

Interaction of Organic Surfaces with Active Species in the High-Vacuum Environment

Authors: V. Podzorov, E. Menard, S. Pereversev, B. Yakshinsky, T. Madey, J. A. Rogers, M. E. Gershenson

Abstract: Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source-drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect… ▽ More Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source-drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect to interaction of the organic surface with electrically neutral free radicals produced in the process of hydrocarbon cracking on hot filaments with a relatively low activation energy Ea ~ 2.5 eV (240 kJ/mol). The reported results might be important for optimizing the high-vacuum processes of fabrication and characterization of a wide range of organic and molecular electronic devices. △ Less

Submitted 15 May, 2005; originally announced May 2005.

Comments: submitted to Appl. Phys. Lett

Photo-induced charge transfer across the interface between organic molecular crystals and polymers

Authors: V. Podzorov, M. E. Gershenson

Abstract: Photo-induced charge transfer of positive and negative charges across the interface between an ordered organic semiconductor and a polymeric insulator is observed in the field-effect experiments. Immobilization of the transferred charge in the polymer results in a shift of the field-effect threshold of polaronic conduction along the interface in the semiconductor, which allows for direct measure… ▽ More Photo-induced charge transfer of positive and negative charges across the interface between an ordered organic semiconductor and a polymeric insulator is observed in the field-effect experiments. Immobilization of the transferred charge in the polymer results in a shift of the field-effect threshold of polaronic conduction along the interface in the semiconductor, which allows for direct measurements of the charge transfer rate. The transfer occurs when the photon energy exceeds the absorption edge of the semiconductor. The direction of the transverse electric field at the interface determines the sign of the transferred charge; the transfer rate is controlled by the field magnitude and light intensity. △ Less

Submitted 22 November, 2004; originally announced November 2004.

Light-induced switching in the back-gated organic transistors with built-in conduction channel

Authors: V. Podzorov, V. M. Pudalov, M. E. Gershenson

Abstract: We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high… ▽ More We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high-current ON state corresponds to zero or negative back-gate voltage; the low-current OFF state - to a positive back-gate voltage that blocks the Schottky contacts. Illumination of the OFET in the OFF state with a short pulse of light switches the device into the ON state that persists in the dark for days. The OFF state can be restored by cycling the back gate voltage. The observed effect can be explained by screening of the back-gate electric field by the charges photo-generated in the bulk of organic semiconductor. △ Less

Submitted 29 June, 2004; originally announced June 2004.

Comments: 3 pages

Organic Single-Crystal Field-Effect Transistors

Authors: R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo, V. Podzorov

Abstract: We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different t… ▽ More We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of $μ$ as high as 15 cm$^2$/Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the \textit{intrinsic} electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research. △ Less

Submitted 5 April, 2004; originally announced April 2004.

Comments: Review article, to appear in special issue of Phys. Stat. Sol. on organic semiconductors

Intrinsic charge transport on the surface of organic semiconductors

Authors: V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, M. E. Gershenson

Abstract: The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide temperature range. The signatures of the intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. The anisotropy of mu van… ▽ More The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide temperature range. The signatures of the intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. The anisotropy of mu vanishes in the activation regime at lower temperatures, where the charge transport becomes dominated by shallow traps. The deep traps, deliberately introduced into the crystal by X-ray radiation, increase the field-effect threshold without affecting the mobility. These traps filled above the field-effect threshold do not scatter the mobile polaronic carriers. △ Less

Submitted 23 March, 2004; originally announced March 2004.

Comments: 10 pages, 4 figures

On the Electron-Electron Interactions in Two Dimensions

Authors: V. M. Pudalov, M. E. Gershenson, H. Kojima

Abstract: In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimenta… ▽ More In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimental teams using different measuring techniques. We conclude that the renormalization is not strongly affected by the material or sample-dependent parameters such as the potential well width, disorder (the carrier mobility), and the bare (band) mass. We demonstrate that the apparent disagreement between the reported results on various 2D electron systems originates mainly from different interpretations of similar "raw" data. Several important issues should be taken into account in the data processing, among them the dependences of the effective mass and spin susceptibility on the in-plane field, and the temperature dependence of the Dingle temperature. The remaining disagreement between the data for various 2D electron systems, on one hand, and the 2D hole system in GaAs, on the other hand, may indicate more complex character of electron-electron interactions in the latter system. △ Less

Submitted 19 March, 2004; v1 submitted 21 January, 2004; originally announced January 2004.

Comments: Added refs; corrected typos. 19 pages, 7 figures. To be published in: Chapter 19, Proceedings of the EURESCO conference "Fundamental Problems of Mesoscopic Physics ", Granada, 2003

Journal ref: Chapter 19 (pp.309-327) in: Fundamental Problems of Mesoscopic Physics. Interaction and Decoherence. Eds. I.V.Lerner, B.L.Altshuler, and Y.Gefen, Nato sci. series, Kluwer (2004)

Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

Authors: V. Podzorov, M. E. Gershenson, Ch. Kloc, R. Zeis, E. Bucher

Abstract: We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity… ▽ More We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity in the WSe2-based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics. △ Less

Submitted 14 January, 2004; originally announced January 2004.

Comments: 3 pages

Reply to Comment (cond-mat/0311174)

Authors: V. M. Pudalov, M. E. Gershenson, H. Kojima, G. Brunthaler, G. Bauer

Abstract: We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters. We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters. △ Less

Submitted 16 April, 2004; v1 submitted 5 January, 2004; originally announced January 2004.

Comments: 4 pages, 3 figures. More data included

Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs

Authors: V. Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, M. E. Gershenson

Abstract: We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate… ▽ More We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. Subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance Ci = 2 +- 0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si = SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (a-Si:H) devices. △ Less

Submitted 7 June, 2003; originally announced June 2003.

Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator

Authors: V. Podzorov, V. M. Pudalov, M. E. Gershenson

Abstract: We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discusse… ▽ More We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discussed. △ Less

Submitted 24 October, 2002; originally announced October 2002.

Comments: 3 pages

Hop** Conductivity Beyond The Percolation Regime Probed By Shot-Noise Measurements

Authors: F. E. Camino, V. V. Kuznetsov, E. E. Mendez, M. E. Gershenson, D. Reuter, P. Schafmeister, A. D. Wieck

Abstract: We have observed suppression of shot noise in the variable-range hop** regime for a two-dimensional electron gas whose localization length, xi, is controlled by a gate voltage. We have found that the suppression factor F (Fano factor) is approximately inversely proportional to the length of the system L (F=L0*/L) for a broad range of values of xi/L_0*, where L0* is the characteristic length. I… ▽ More We have observed suppression of shot noise in the variable-range hop** regime for a two-dimensional electron gas whose localization length, xi, is controlled by a gate voltage. We have found that the suppression factor F (Fano factor) is approximately inversely proportional to the length of the system L (F=L0*/L) for a broad range of values of xi/L_0*, where L0* is the characteristic length. In the case xi/L0*<<1, we have identified L0* with the distance L0 between the hard hops along the sample length. On the other hand, when xi is of the order of L0*, we have observed that L0* does not agree with L0 calculated from the percolation model of hop**. We attribute this discrepancy to a breakdown of that model and to a reconstruction of the hop** paths. △ Less

Submitted 11 April, 2003; v1 submitted 8 October, 2002; originally announced October 2002.

Comments: 4 pages, 4 figures, submitted to Physical Review B as a Brief Report

Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

Authors: V. M. Pudalov, M. E. Gershenson, H. Kojima, G. Brunthaler, A. Prinz, G. Bauer

Abstract: We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by t… ▽ More We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance ρ(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than ρ(T). △ Less

Submitted 30 May, 2002; v1 submitted 21 May, 2002; originally announced May 2002.

Comments: 4 pages, 5 figures. References updated

Journal ref: Phys. Rev. Lett. v91, 126403 (2003)

Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality

Authors: V. M. Pudalov, M. E. Gershenson, H. Kojima

Abstract: In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate voltage V^{cool}. Different V^{cool} did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. Howev… ▽ More In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate voltage V^{cool}. Different V^{cool} did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. However, the temperature dependences of the resistance and the magnetoresistance in parallel magnetic fields, measured in the vicinity of the metal-insulator transition in 2D, carry a strong imprint of individuality of the quenched disorder determined by V^{cool}. This demonstrates that the observed transition between ``metallic'' and insulating regimes involves both, universal effects of electron-electron interaction and sample-specific effects. Far away from the transition, at lower carrier densities and lower resistivities < 0.1 h/e^2, the transport and magnetotransport become nearly universal. △ Less

Submitted 31 December, 2001; originally announced January 2002.

Comments: 4 pages, 4 figures

Absence of Ferromagnetic Instability at the Metal-Insulator Transition in Si-inversion Layers

Authors: V. M. Pudalov, M. E. Gershenson, H. Kojima

Abstract: We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT) for two samples studied. The periodicity of oscillations clearly demonstrates that the electron states remain fourfold degenerate down to and at the 2D MIT.… ▽ More We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT) for two samples studied. The periodicity of oscillations clearly demonstrates that the electron states remain fourfold degenerate down to and at the 2D MIT. Both the effective spin susceptibility χ* and mass m* remain finite and show no signatures of divergency at the critical density for both samples studied. To test possible divergency of χ*(n) and m*(n) at even lower densities, we have analyzed the data on χ*(n) and m*(n) in terms of a critical dependence χ*, m* ~ (n/n_0 -1)^{-α}. Our data suggest that χ* and m* may diverge at n_0 < 0.5x10^{11}/cm^2 (r_s > 12), which is significantly smaller than n_c. △ Less

Submitted 14 June, 2002; v1 submitted 8 October, 2001; originally announced October 2001.

Comments: 4 pages, 3 figures

Martensitic accommodation strain and the metal-insulator transition in manganites

Authors: V. Podzorov, B. G. Kim, V. Kiryukhin, M. E. Gershenson, S-W. Cheong

Abstract: In this paper, we report polarized optical microscopy and electrical transport studies of manganese oxides that reveal that the charge ordering transition in these compounds exhibits typical signatures of a martensitic transformation. We demonstrate that specific electronic properties of charge-ordered manganites stem from a combination of martensitic accommodation strain and effects of strong e… ▽ More In this paper, we report polarized optical microscopy and electrical transport studies of manganese oxides that reveal that the charge ordering transition in these compounds exhibits typical signatures of a martensitic transformation. We demonstrate that specific electronic properties of charge-ordered manganites stem from a combination of martensitic accommodation strain and effects of strong electron correlations. This intrinsic strain is strongly affected by the grain boundaries in ceramic samples. Consistently, our studies show a remarkable enhancement of low field magnetoresistance and the grain size effect on the resistivity in polycrystalline samples and suggest that the transport properties of this class of manganites are governed by the charge-disordered insulating phase stabilized at low temperature by virtue of martensitic accommodation strain. High sensitivity of this phase to strains and magnetic field leads to a variety of striking phenomena, such as unusually high magnetoresistance (10^10 %) in low magnetic fields. △ Less

Submitted 30 July, 2001; originally announced July 2001.

Comments: Short paper, 4 figures, to appear in Rapid Communication

Mesoscopic, Non-equilibrium Fluctuations of Inhomogeneous Electronic States in Manganites

Authors: V. Podzorov, C. H. Chen, M. E. Gershenson, S-W. Cheong

Abstract: By using the dark-field real-space imaging technique of transmission electron microscopy (TEM), we have observed slow 200 A-scale fluctuations of charge-ordered (CO) phase in mixed-valent manganites under a strong electron beam irradiation. In addition to these unusual fluctuations of the CO phase, we observed the switching-type fluctuations of electrical resistivity in the same sample, which we… ▽ More By using the dark-field real-space imaging technique of transmission electron microscopy (TEM), we have observed slow 200 A-scale fluctuations of charge-ordered (CO) phase in mixed-valent manganites under a strong electron beam irradiation. In addition to these unusual fluctuations of the CO phase, we observed the switching-type fluctuations of electrical resistivity in the same sample, which were found to be as large as several percents. Systematic analysis indicates that these two different types of fluctuations with a similar time scale of the order of seconds are interconnected through a meta-stable insulating charge-disordered state. Current dependence of the fluctuations suggests a non-equilibrium nature of this slow dynamics. △ Less

Submitted 21 May, 2001; originally announced May 2001.

Comments: To appear in Europhysics Letters

The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

Authors: V. M. Pudalov, M. E. Gershenson, H. Kojima, N. Butch, E. M. Dizhur, G. Brunthaler, A. Prinz, G. Bauer

Abstract: We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magn… ▽ More We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility $χ^*$, the effective mass $m^*$, and the $g^*$-factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of $χ^*$ by a factor of $\sim 4.7$. △ Less

Submitted 9 October, 2001; v1 submitted 3 May, 2001; originally announced May 2001.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. v88, 196404 (2002)

Millisecond Electron-Phonon Relaxation in Ultrathin Disordered Metal Films at Millikelvin Temperatures

Authors: M. E. Gershenson, D. Gong, T. Sato, B. S. Karasik, A. V. Sergeev

Abstract: We have measured directly the thermal conductance between electrons and phonons in ultra-thin Hf and Ti films at millikelvin temperatures. The experimental data indicate that electron-phonon coupling in these films is significantly suppressed by disorder. The electron cooling time $τ_ε$ follows the $T^{-4}$-dependence with a record-long value $τ_ε=25ms$ at $T=0.04K$. The hot-electron detectors o… ▽ More We have measured directly the thermal conductance between electrons and phonons in ultra-thin Hf and Ti films at millikelvin temperatures. The experimental data indicate that electron-phonon coupling in these films is significantly suppressed by disorder. The electron cooling time $τ_ε$ follows the $T^{-4}$-dependence with a record-long value $τ_ε=25ms$ at $T=0.04K$. The hot-electron detectors of far-infrared radiation, fabricated from such films, are expected to have a very high sensitivity. The noise equivalent power of a detector with the area $1\mum^2$ would be $(2-3)10^{-20}W/Hz^{1/2}$, which is two orders of magnitude smaller than that of the state-of-the-art bolometers. △ Less

Submitted 4 April, 2001; originally announced April 2001.

Comments: 13 pages, including 3 figures

Giant Peak of the 1/f Noise at the Metal-Insulator Transitions in Low-Tc CMR Manganites: Evidence of the Percolation Threshold at Tc

Authors: V. Podzorov, M. Uehara, M. E. Gershenson, S-W. Cheong

Abstract: We observed a dramatic peak in the 1/f noise at the metal-insulator transition (MIT) in low-Tc manganites. This many-orders-of-magnitude noise enhancement is observed for both polycrystalline and single-crystal samples of La{5/8-y}Pr{y}Ca{3/8}MnO{3} (y=0.35-0.4) in zero magnetic field and Pr{1-x}Ca{x}MnO{3} (x=0.35-0.5) in magnetic field. This observation strongly suggests that the microscopic p… ▽ More We observed a dramatic peak in the 1/f noise at the metal-insulator transition (MIT) in low-Tc manganites. This many-orders-of-magnitude noise enhancement is observed for both polycrystalline and single-crystal samples of La{5/8-y}Pr{y}Ca{3/8}MnO{3} (y=0.35-0.4) in zero magnetic field and Pr{1-x}Ca{x}MnO{3} (x=0.35-0.5) in magnetic field. This observation strongly suggests that the microscopic phase separation in the low-Tc manganites causes formation of a percolation network, and that the observed MIT is a percolation threshold. △ Less

Submitted 3 December, 1999; originally announced December 1999.

Comments: 10 pages, 5 figures

Giant 1/f noise in perovskite manganites: evidence of the percolation threshold

Authors: V. Podzorov, M. Uehara, M. E. Gershenson, T. Y. Koo, S-W. Cheong

Abstract: We discovered an unprecedented magnitude of the 1/f noise near the Curie temperature Tc in low-Tc manganites. The scaling behavior of the 1/f noise and the resistance provides strong evidence of the percolation nature of the ferromagnetic transition in the polycrystalline samples. The step-like changes of the resistance with temperature, observed for single crystals, suggest that the size of the… ▽ More We discovered an unprecedented magnitude of the 1/f noise near the Curie temperature Tc in low-Tc manganites. The scaling behavior of the 1/f noise and the resistance provides strong evidence of the percolation nature of the ferromagnetic transition in the polycrystalline samples. The step-like changes of the resistance with temperature, observed for single crystals, suggest that the size of the ferromagnetic domains depends on the size of crystallites. △ Less

Submitted 14 October, 1999; originally announced October 1999.

Comments: 4 pages, 3 figures

Electron-Assisted Hop** in Two Dimensions

Authors: M. E. Gershenson, Yu. B. Khavin, D. Reuter, P. Schafmeister, A. D. Wieck

Abstract: We have studied the non-ohmic effects in the conductivity of a two-dimensional system which undergoes the crossover from weak to strong localization with decreasing electron concentration. When the electrons are removed from equilibrium with phonons, the hop** conductivity depends only on the electron temperature. This indicates that the hop** transport in a system with a large localization… ▽ More We have studied the non-ohmic effects in the conductivity of a two-dimensional system which undergoes the crossover from weak to strong localization with decreasing electron concentration. When the electrons are removed from equilibrium with phonons, the hop** conductivity depends only on the electron temperature. This indicates that the hop** transport in a system with a large localization length is assisted by electron-electron interactions rather than by the phonons. △ Less

Submitted 6 August, 1999; originally announced August 1999.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 85, 1718 (2000)

Comment on "Quantum Decoherence in Disordered Mesoscopic Systems"

Authors: I. L. Aleiner, B. L. Altshuler, M. E. Gershenson

Abstract: In a recent paper, Phys. Rev. Lett. 81, 1074 (1998), Golubev and Zaikin (GZ) found that ``zero-point fluctuations of electrons'' contribute to the dephasing rate extracted from the magnetoresistance. As a result, the dephasing rate remains finite at zero temperature. GZ claimed that their results ``agree well with the experimental data''. We point out that the GZ results are incompatible with (i… ▽ More In a recent paper, Phys. Rev. Lett. 81, 1074 (1998), Golubev and Zaikin (GZ) found that ``zero-point fluctuations of electrons'' contribute to the dephasing rate extracted from the magnetoresistance. As a result, the dephasing rate remains finite at zero temperature. GZ claimed that their results ``agree well with the experimental data''. We point out that the GZ results are incompatible with (i) conventional perturbation theory of the effects of interaction on weak localization (WL), and (ii) with the available experimental data. More detailed criticism of GZ findings can be found in cond-mat/9808053. △ Less

Submitted 7 August, 1998; originally announced August 1998.

Comments: 1 page, no figures

Interaction effects and phase relaxation in disordered systems

Authors: I. L. Aleiner, B. L. Altshuler, M. E. Gershenson

Abstract: This paper is intended to demonstrate that there is no need to revise the existing theory of the transport properties of disordered conductors in the so-called weak localization regime. In particular, we demonstrate explicitly that recent attempts to justify theoretically that the dephasing rate (extracted from the magnetoresistance) remains finite at zero temperature are based on the profoundly… ▽ More This paper is intended to demonstrate that there is no need to revise the existing theory of the transport properties of disordered conductors in the so-called weak localization regime. In particular, we demonstrate explicitly that recent attempts to justify theoretically that the dephasing rate (extracted from the magnetoresistance) remains finite at zero temperature are based on the profoundly incorrect calculation. This demonstration is based on a straightforward evaluation of the effect of the electron-electron interaction on the weak localization correction to the conductivity of disordered metals. Using well-controlled perturbation theory with the inverse conductance $g$ as the small parameter, we show that this effect consists of two contributions. First contribution comes from the processes with energy transfer smaller than the temperature. This contribution is responsible for setting the energy scale for the magnetoresistance. The second contribution originates from the virtual processes with energy transfer larger than the temperature. It is shown that the latter processes have nothing to do with the dephasing, but rather manifest the second order (in $1/g$) correction to the conductance. This correction is calculated for the first time. The paper also contains a brief review of the existing experiments on the dephasing of electrons in disordered conductors and an extended qualitative discussion of the quantum corrections to the conductivity and to the density of electronic states in the weak localization regime. △ Less

Submitted 5 August, 1998; originally announced August 1998.

Comments: 34 pages, 13 .eps figures

Strong localization of electrons in quasi-one-dimensional conductors

Authors: Yu. B. Khavin, M. E. Gershenson, A. L. Bogdanov

Abstract: We report on the experimental study of electron transport in sub-micron-wide ''wires'' fabricated from Si $δ$-doped GaAs. These quasi-one-dimensional (Q1D) conductors demonstrate the crossover from weak to strong localization with decreasing the temperature. On the insulating side of the crossover, the resistance has been measured as a function of temperature, magnetic field, and applied voltage… ▽ More We report on the experimental study of electron transport in sub-micron-wide ''wires'' fabricated from Si $δ$-doped GaAs. These quasi-one-dimensional (Q1D) conductors demonstrate the crossover from weak to strong localization with decreasing the temperature. On the insulating side of the crossover, the resistance has been measured as a function of temperature, magnetic field, and applied voltage for different values of the electron concentration, which was varied by applying the gate voltage. The activation temperature dependence of the resistance has been observed with the activation energy close to the mean energy spacing of electron states within the localization domain. The study of non-linearity of the current-voltage characteristics provides information on the distance between the critical hops which govern the resistance of Q1D conductors in the strong localization (SL) regime. We observe the exponentially strong negative magnetoresistance; this orbital magnetoresistance is due to the universal magnetic-field dependence of the localization length in Q1D conductors. The method of measuring of the single-particle density of states (DoS) in the SL regime has been suggested. Our data indicate that there is a minimum of DoS at the Fermi level due to the long-range Coulomb interaction. △ Less

Submitted 9 June, 1998; v1 submitted 20 May, 1998; originally announced May 1998.

Comments: 12 pages, 11 figures; the final version to appear in Phys. Rev. B

Phase Relaxation of Electrons in Disordered Conductors

Authors: B. L. Altshuler, M. E. Gershenson, I. L. Aleiner

Abstract: Conduction electrons in disordered metals and heavily doped semiconductors at low temperatures preserve their phase coherence for a long time: phase relaxation time $τ_φ$ can be orders of magnitude longer than the momentum relaxation time. The large difference in these time scales gives rise to well known effects of weak localization, such as anomalous magnetoresistance. Among other interesting… ▽ More Conduction electrons in disordered metals and heavily doped semiconductors at low temperatures preserve their phase coherence for a long time: phase relaxation time $τ_φ$ can be orders of magnitude longer than the momentum relaxation time. The large difference in these time scales gives rise to well known effects of weak localization, such as anomalous magnetoresistance. Among other interesting characteristics, study of these effects provide quantitative information on the dephasing rate $1/τ_φ$. This parameter is of fundamental interest: the relation between $\hbar/τ_φ$ and the temperature $T$ (a typical energy scale of an electron) determines how well a single electron state is defined. We will discuss the basic physical meaning of $1/τ_φ$ in different situations and its difference from the energy relaxation rate. At low temperatures, the phase relaxation rate is governed by collisions between electrons. We will review existing theories of dephasing by these collisions or (which is the same) by electric noise inside the sample. We also discuss recent experiments on the magnetoresistance of 1D systems: some of them show saturation of $1/τ_φ$ at low temperatures, the other do not. To resolve this contradiction we discuss dephasing by an external microwave field and by nonequilibrium electric noise. △ Less

Submitted 14 March, 1998; v1 submitted 10 March, 1998; originally announced March 1998.

Comments: Order of figures and references corrected; one reference added; 15 pages, 2 figures, lecture given on 10th International Winterschool on New Developments in Solid State Physics, Mauterndorf, Salzburg, Austria; 23-27 Feb. 1998