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Investigation on radiation generated by Sub-GeV electrons in ultrashort Si and Ge bent crystals
Authors:
L. Bandiera,
A. Sytov,
D. De Salvador,
A. Mazzolari,
E. Bagli,
R. Camattari,
S. Carturan,
C. Durighello,
G. Germogli,
V. Guidi,
P. Klag,
W. Lauth,
G. Maggioni,
V. Mascagna,
M. Prest,
M. Romagnoni,
M. Soldani,
V. V. Tikhomirov,
E. Vallazza
Abstract:
We report on the measurements of the spectra of gamma radiation generated by 855 MeV electrons in bent silicon and germanium crystals at MAMI (MAinzer MIkrotron). The crystals were 15 μm thick along the beam direction to ensure high deflection efficiency. Their (111) crystalline planes were bent by means of a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature.…
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We report on the measurements of the spectra of gamma radiation generated by 855 MeV electrons in bent silicon and germanium crystals at MAMI (MAinzer MIkrotron). The crystals were 15 μm thick along the beam direction to ensure high deflection efficiency. Their (111) crystalline planes were bent by means of a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature. In such a way it was possible to investigate the radiation emitted under planar channeling and volume reflection as a function of the curvature of the crystalline planes. We show that using volume reflection, one can produce intense gamma radiation with comparable intensity but higher angular acceptance than for channeling. We studied the trade-off between radiation intensity and angular acceptance at different values of the crystal curvature. The measurements of radiation spectra have been carried out for the first time in bent Germanium crystals. In particular, the intensity of radiation in the Ge crystal is higher than in the Si one due to the higher atomic number, which is important for the development of the X-ray and gamma radiation sources based on higher-Z deformed crystals, such as crystalline undulator.
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Submitted 28 November, 2020; v1 submitted 23 June, 2020;
originally announced June 2020.
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Innovative remotely-controlled bending device for thin silicon and germanium crystals
Authors:
D. De Salvador,
S. Carturan,
A. Mazzolari,
E. Bagli,
L. Bandiera,
C. Durighello,
G. Germogli,
V. Guidi,
P. Klag,
W. Lauth,
G. Maggioni,
M. Romagnoni,
A. Sytov
Abstract:
Steering of negatively charged particle beams below 1 GeV has demonstrated to be possible with thin bent silicon and germanium crystals. A newly designed mechanical holder was used for bending crystals, since it allows a remotely-controlled adjustment of crystal bending and compensation of unwanted torsion. Bent crystals were installed and tested at the MAMI Mainz MIcrotron to achieve steering of…
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Steering of negatively charged particle beams below 1 GeV has demonstrated to be possible with thin bent silicon and germanium crystals. A newly designed mechanical holder was used for bending crystals, since it allows a remotely-controlled adjustment of crystal bending and compensation of unwanted torsion. Bent crystals were installed and tested at the MAMI Mainz MIcrotron to achieve steering of 0.855-GeV electrons at different bending radii. We report the description and characterization of the innovative bending device developed at INFN Laboratori Nazionali di Legnaro (LNL).
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Submitted 13 February, 2020;
originally announced February 2020.
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Broad angular anisotropy of multiple scattering in a Si crystal
Authors:
A. Mazzolari,
A. Sytov,
L. Bandiera,
G. Germogli,
M. Romagnoni,
E. Bagli,
V. Guidi,
V. V. Tikhomirov,
D. De Salvador,
S. Carturan,
C. Durigello,
G. Maggioni,
M. Campostrini,
A. Berra,
V. Mascagna,
M. Prest,
E. Vallazza,
W. Lauth,
P. Klag,
M. Tamisari
Abstract:
We observed reduction of multiple Coulomb scattering of 855 MeV electrons within a Si crystalline plate w.r.t. an amorphous plate with the same mass thickness. The reduction owed to complete or partial suppression of the coherent part of multiple scattering in a crystal vs crystal orientation with the beam. Experimental data were collected at Mainz Mikrotron and critically compared to theoretical…
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We observed reduction of multiple Coulomb scattering of 855 MeV electrons within a Si crystalline plate w.r.t. an amorphous plate with the same mass thickness. The reduction owed to complete or partial suppression of the coherent part of multiple scattering in a crystal vs crystal orientation with the beam. Experimental data were collected at Mainz Mikrotron and critically compared to theoretical predictions and Monte Carlo simulations. Our results highlighted maximal 7 % reduction of the r.m.s. scattering angle at certain beam alignment with the [100] crystal axes. However, partial reduction was recorded over a wide range of alignment of the electron beam with the crystal up to 15 deg. This evidence may be relevant to refine the modelling of multiple scattering in crystals for currently used software, which is interesting for detectors in nuclear, medical, high energy physics.
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Submitted 17 September, 2019;
originally announced September 2019.
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Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals
Authors:
A. I. Sytov,
L. Bandiera,
D. De Salvador,
A. Mazzolari,
E. Bagli,
A. Berra,
S. Carturan,
C. Durighello,
G. Germogli,
V. Guidi,
P. Klag,
W. Lauth,
G. Maggioni,
M. Prest,
M. Romagnoni,
V. V. Tikhomirov,
E. Vallazza
Abstract:
We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. 15 $μ$m long crystals, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar ch…
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We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. 15 $μ$m long crystals, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35 %, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10 % due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals.
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Submitted 5 September, 2017;
originally announced September 2017.
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Experimental evidence of independence of nuclear de-channeling length on the particle charge sign
Authors:
E. Bagli,
V. Guidi,
A. Mazzolari,
L. Bandiera,
G. Germogli,
A. I. Sytov,
D. De Salvador,
A. Berra,
M. Prest,
E. Vallazza
Abstract:
Under coherent interactions, particles undergo correlated collisions with the crystal lattice and their motion result in confinement in the fields of atomic planes, i.e. particle channeling. Other than coherently interacting with the lattice, particles also suffer incoherent interactions with individual nuclei and may leave their bounded motion, i.e., they de-channel. This latter is the main limit…
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Under coherent interactions, particles undergo correlated collisions with the crystal lattice and their motion result in confinement in the fields of atomic planes, i.e. particle channeling. Other than coherently interacting with the lattice, particles also suffer incoherent interactions with individual nuclei and may leave their bounded motion, i.e., they de-channel. This latter is the main limiting factor for applications of coherent interactions in crystal-assisted particle steering. We experimentally investigated the nature of dechanneling of 120 GeV/c $e^{-}$ and $e^{+}$ in a bent silicon crystal at H4-SPS external line at CERN. We found out that while channeling efficiency differs significantly for $e^{-}$ ($2\pm2$ $\%$) and $e^{+}$ ($54\pm2$ $\%$), their nuclear dechanneling length is comparable, $(0.6\pm0.1)$ mm for $e^{-}$ and $(0.7\pm0.3)$ mm for $e^{+}$. The experimental proof of the equality of the nuclear dechanneling length for positrons and electrons is interpreted in terms of similar dynamics undergone by the channeled particles in the field of nuclei no matter of their charge.
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Submitted 13 January, 2017; v1 submitted 28 June, 2016;
originally announced June 2016.
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Relaxation of axially confined 400 GeV/c protons to planar channeling in a bent crystal
Authors:
L. Bandiera,
A. Mazzolari,
E. Bagli,
G. Germogli,
V. Guidi,
A. Sytov,
I. V. Kirillin,
N. F. Shul'ga,
A. Berra,
D. Lietti,
M. Prest,
D. De Salvador,
E. Vallazza
Abstract:
An investigation on the mechanism of relaxation of axially confined 400 GeV/c protons to planar channeling in a bent crystal was carried out at the extracted line H8 from CERN Super Proton Synchrotron. The experimental results were critically compared to computer simulations, showing a good agreement. We firmly individuated a necessary condition for the exploitation of axial confinement or its rel…
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An investigation on the mechanism of relaxation of axially confined 400 GeV/c protons to planar channeling in a bent crystal was carried out at the extracted line H8 from CERN Super Proton Synchrotron. The experimental results were critically compared to computer simulations, showing a good agreement. We firmly individuated a necessary condition for the exploitation of axial confinement or its relaxation for particle beam manipulation in high-energy accelerators. We demonstrated that with a short bent crystal, aligned with one of its main axis to the beam direction, it is possible to realize either a total beam steerer or a beam splitter with adjustable intensity. In particular, in the latter case, a complete relaxation from axial confinement to planar channeling takes place, resulting in beam splitting into the two strongest skew planar channels.
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Submitted 10 November, 2015;
originally announced November 2015.
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Planar channeling and quasichanneling oscillations in a bent crystal
Authors:
A. I. Sytov,
V. Guidi,
V. V. Tikhomirov,
E. Bagli,
L. Bandiera,
G. Germogli,
A. Mazzolari
Abstract:
Particles passing through a crystal under planar channeling experience transverse oscillations in their motion. As channeled particles approach the atomic planes of a crystal, they are likely to be dechanneled. This effect was used in ion-beam analysis with MeV energy. We studied this effect in a bent crystal for positive and negative particles within a wide range of energies in sight of applicati…
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Particles passing through a crystal under planar channeling experience transverse oscillations in their motion. As channeled particles approach the atomic planes of a crystal, they are likely to be dechanneled. This effect was used in ion-beam analysis with MeV energy. We studied this effect in a bent crystal for positive and negative particles within a wide range of energies in sight of application of such crystals at accelerators. We found the conditions for the appearance or not of channeling oscillations. Indeed a new kind of oscillations, strictly related to the motion of over-barrier particles, i.e. quasichanneling particles, has been predicted. Such oscillations, named planar quasichanneling oscillations, possess a different nature than channeling oscillations. Through computer simulation, we studied this effect and provided a theoretical interpretation for them. We show that channeling oscillations can be observed only for positive particles while quasichanneling oscillations can exist for particles with either sign. The conditions for experimental observation of channeling and quasichanneling oscillations at existing accelerators with available crystal has been found and optimized.
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Submitted 18 May, 2015; v1 submitted 7 May, 2015;
originally announced May 2015.
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Experimental evidence of planar channeling in a periodically bent crystal
Authors:
E. Bagli,
L. Bandiera,
V. Bellucci,
A. Berra,
R. Camattari,
D. De Salvador,
G. Germogli,
V. Guidi,
L. Lanzoni,
D. Lietti,
A. Mazzolari,
M. Prest,
V. V. Tikhomirov,
E. Vallazza
Abstract:
The usage of a Crystalline Undulator (CU) has been identified as a promising solution for generating powerful and monochromatic $γ$-rays. A CU was fabricated at SSL through the grooving method, i.e., by the manufacturing of a series of periodical grooves on the major surfaces of a crystal. The CU was extensively characterized both morphologically via optical interferometry at SSL and structurally…
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The usage of a Crystalline Undulator (CU) has been identified as a promising solution for generating powerful and monochromatic $γ$-rays. A CU was fabricated at SSL through the grooving method, i.e., by the manufacturing of a series of periodical grooves on the major surfaces of a crystal. The CU was extensively characterized both morphologically via optical interferometry at SSL and structurally via X-ray diffraction at ESRF. Then, it was finally tested for channeling with a 400 GeV/c proton beam at CERN. The experimental results were compared to Monte Carlo simulations. Evidence of planar channeling in the CU was firmly observed. Finally, the emission spectrum of the positron beam interacting with the CU was simulated for possible usage in currently existing facilities.
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Submitted 22 October, 2014; v1 submitted 1 October, 2014;
originally announced October 2014.
