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FiND: Few-shot three-dimensional image-free confocal focusing on point-like emitters
Authors:
Swetapadma Sahoo,
Junyue Jiang,
Jaden Li,
Kieran Loehr,
Chad E. Germany,
**cheng Zhou,
Bryan K. Clark,
Simeon I. Bogdanov
Abstract:
Confocal fluorescence microscopy is widely applied for the study of point-like emitters such as biomolecules, material defects, and quantum light sources. Confocal techniques offer increased optical resolution, dramatic fluorescence background rejection and sub-nanometer localization, useful in super-resolution imaging of fluorescent biomarkers, single-molecule tracking, or the characterization of…
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Confocal fluorescence microscopy is widely applied for the study of point-like emitters such as biomolecules, material defects, and quantum light sources. Confocal techniques offer increased optical resolution, dramatic fluorescence background rejection and sub-nanometer localization, useful in super-resolution imaging of fluorescent biomarkers, single-molecule tracking, or the characterization of quantum emitters. However, rapid, noise-robust automated 3D focusing on point-like emitters has been missing for confocal microscopes. Here, we introduce FiND (Focusing in Noisy Domain), an imaging-free, non-trained 3D focusing framework that requires no hardware add-ons or modifications. FiND achieves focusing for signal-to-noise ratios down to 1, with a few-shot operation for signal-to-noise ratios above 5. FiND enables unsupervised, large-scale focusing on a heterogeneous set of quantum emitters. Additionally, we demonstrate the potential of FiND for real-time 3D tracking by following the drift trajectory of a single NV center indefinitely with a positional precision of < 10 nm. Our results show that FiND is a useful focusing framework for the scalable analysis of point-like emitters in biology, material science, and quantum optics.
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Submitted 10 November, 2023;
originally announced November 2023.
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Nanoscale control of rewriteable do** patterns in pristine graphene/boron nitride heterostructures
Authors:
Jairo Velasco Jr.,
Long Ju,
Dillon Wong,
Salman Kahn,
Juwon Lee,
Hsin-Zon Tsai,
Chad Germany,
Sebastian Wickenburg,
Jiong Lu,
Takashi Taniguchi,
Kenji Watanabe,
Alex Zettl,
Feng Wang,
Michael F. Crommie
Abstract:
Nanoscale control of charge do** in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical do** are the two most common methods to achieve local control of such do**. However, these approaches suffer from complicated fabrication pr…
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Nanoscale control of charge do** in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical do** are the two most common methods to achieve local control of such do**. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of do** patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride (BN) heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge do** can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path towards on-demand graphene pn junctions and ultra-thin memory devices.
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Submitted 9 February, 2016;
originally announced February 2016.
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Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy
Authors:
Dillon Wong,
Jairo Velasco Jr.,
Long Ju,
Juwon Lee,
Salman Kahn,
Hsin-Zon Tsai,
Chad Germany,
Takashi Taniguchi,
Kenji Watanabe,
Alex Zettl,
Feng Wang,
Michael F. Crommie
Abstract:
Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularly important. Scanning tunneling microscopy (STM) has a history of imaging the electronic structure of individual point defects in conductors, semiconductors, and ultrathin films, but single-defect electronic characteriza…
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Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularly important. Scanning tunneling microscopy (STM) has a history of imaging the electronic structure of individual point defects in conductors, semiconductors, and ultrathin films, but single-defect electronic characterization at the nanometer-scale remains an elusive goal for intrinsic bulk insulators. Here we report the characterization and manipulation of individual native defects in an intrinsic bulk hexagonal boron nitride (BN) insulator via STM. Normally, this would be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by employing a graphene/BN heterostructure, which exploits graphene's atomically thin nature to allow visualization of defect phenomena in the underlying bulk BN. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunneling spectroscopy (STS), we obtain charge and energy-level information for these BN defect structures. In addition to characterizing such defects, we find that it is also possible to manipulate them through voltage pulses applied to our STM tip.
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Submitted 4 December, 2014;
originally announced December 2014.
