Cavity-enhanced single artificial atoms in silicon
Authors:
Valeria Saggio,
Carlos Errando-Herranz,
Samuel Gyger,
Christopher Panuski,
Mihika Prabhu,
Lorenzo De Santis,
Ian Christen,
Dalia Ornelas-Huerta,
Hamza Raniwala,
Connor Gerlach,
Marco Colangelo,
Dirk Englund
Abstract:
Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile and robust photonic qubits. The central requirements for the spin-photon interface at the heart of these systems are long spin coherence times and efficient spin-photon coupling at telecommunication wavelengths. Artificial atoms in silicon ha…
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Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile and robust photonic qubits. The central requirements for the spin-photon interface at the heart of these systems are long spin coherence times and efficient spin-photon coupling at telecommunication wavelengths. Artificial atoms in silicon have a unique potential to combine the long coherence times of spins in silicon with telecommunication wavelength photons in the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of artificial atoms. An open challenge is to enhance this interaction via coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms at telecommunication wavelengths in silicon. We optimize photonic crystal cavities via inverse design and show controllable cavity-coupling of single G-centers in the telecommunications O-band. Our results illustrate the potential to achieve a deterministic spin-photon interface in silicon at telecommunication wavelengths, paving the way for scalable quantum information processing.
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Submitted 20 February, 2023;
originally announced February 2023.
Individually Addressable and Spectrally Programmable Artificial Atoms in Silicon Photonics
Authors:
Mihika Prabhu,
Carlos Errando-Herranz,
Lorenzo De Santis,
Ian Christen,
Changchen Chen,
Connor Gerlach,
Dirk R. Englund
Abstract:
Artificial atoms in solids have emerged as leading systems for quantum information processing tasks such as quantum networking, sensing, and computing. A central goal is to develop platforms for precise and scalable control of individually addressable artificial atoms that feature efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related 'G-center', exhib…
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Artificial atoms in solids have emerged as leading systems for quantum information processing tasks such as quantum networking, sensing, and computing. A central goal is to develop platforms for precise and scalable control of individually addressable artificial atoms that feature efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related 'G-center', exhibit emission directly into the telecommunications O-band and can leverage the maturity of silicon-on-insulator (SOI) photonics. Here, we demonstrate the generation, individual addressing, and spectral trimming of G-center artificial atoms in a SOI photonic integrated circuit (PIC) platform. Focusing on the neutral charge state emission at 1278nm, we observe waveguide-coupled single photon emission with an exceptionally narrow inhomogeneous distribution with standard deviation of 1.1nm, an excited state lifetime of 8.3$\pm$0.7ns, and no degradation after months of operation. In addition, we introduce a technique for optical trimming of spectral transitions up to 300 pm (55 GHz) and local deactivation of single artificial atoms. This non-volatile "spectral programming" enables the alignment of quantum emitters into 25 GHz telecommunication grid channels. Our demonstration opens the path to quantum information processing based on implantable artificial atoms in very large scale integrated (VLSI) photonics.
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Submitted 29 January, 2023; v1 submitted 4 February, 2022;
originally announced February 2022.
