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Spin-orbit proximity in MoS$_2$/bilayer graphene heterostructures
Authors:
M. Masseroni,
M. Gull,
A. Panigrahi,
N. Jacobsen,
F. Fischer,
C. Tong,
J. D. Gerber,
M. Niese,
T. Taniguchi,
K. Watanabe,
L. Levitov,
T. Ihn,
K. Ensslin,
H. Duprez
Abstract:
Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin-orbit coupling (SOC) in graphene. Future devices concepts require the understanding the p…
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Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin-orbit coupling (SOC) in graphene. Future devices concepts require the understanding the precise nature of SOC in TMD/bilayer graphene heterostructures and its influence on electronic transport phenomena. Here, we experimentally confirm the presence of two distinct types of SOC, Ising (1.55 meV) and Rashba (2.5 meV), in bilayer graphene when interfaced with molybdenum disulphide, recognized as one of the most stable TMDs. Furthermore, we reveal a non-monotonic trend in conductivity with respect to the electric displacement field at charge neutrality. This phenomenon is ascribed to the existence of single-particle gaps induced by the Ising SOC, which can be closed by a critical displacement field. Remarkably, our findings also unveil sharp peaks in the magnetoconductivity around the critical displacement field, challenging existing theoretical models.
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Submitted 25 March, 2024;
originally announced March 2024.
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Ultra-long relaxation of a Kramers qubit formed in a bilayer graphene quantum dot
Authors:
Artem O. Denisov,
Veronika Reckova,
Solenn Cances,
Max J. Ruckriegel,
Michele Masseroni,
Christoph Adam,
Chuyao Tong,
Jonas D. Gerber,
Wei Wister Huang,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin,
Hadrien Duprez
Abstract:
The intrinsic valley degree of freedom makes bilayer graphene a unique platform for emerging types of semiconducting qubits. The single-carrier quantum dot ground state exhibits a two-fold degeneracy where the two states have opposite spin and valley quantum numbers. By breaking the time-reversal symmetry of this ground state with an out-of-plane magnetic field, a novel type of qubit (Kramers qubi…
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The intrinsic valley degree of freedom makes bilayer graphene a unique platform for emerging types of semiconducting qubits. The single-carrier quantum dot ground state exhibits a two-fold degeneracy where the two states have opposite spin and valley quantum numbers. By breaking the time-reversal symmetry of this ground state with an out-of-plane magnetic field, a novel type of qubit (Kramers qubit), encoded in the two-dimensional spin-valley subspace, becomes accessible. The Kramers qubit is robust against known spin- and valley-mixing mechanisms, as it requires a simultaneous change of both quantum numbers, potentially resulting in long relaxation and coherence times. We measure the relaxation time of a single carrier in the excited states of a bilayer graphene quantum dot at small ($\sim \mathrm{mT}$) and zero magnetic fields. We demonstrate ultra-long spin-valley relaxation times of the Kramers qubit exceeding $30~\mathrm{s}$, which is about two orders of magnitude longer than the spin relaxation time of $400~\mathrm{ms}$. The demonstrated high-fidelity single-shot readout and long relaxation times are the foundation for novel, long-lived semiconductor qubits.
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Submitted 12 March, 2024;
originally announced March 2024.
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Long-lived valley states in bilayer graphene quantum dots
Authors:
Rebekka Garreis,
Chuyao Tong,
Jocelyn Terle,
Max Josef Ruckriegel,
Jonas Daniel Gerber,
Lisa Maria Gächter,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin,
Wei Wister Huang
Abstract:
Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital degeneracy that arises from the symmetry of the hexagonal crystal structure. The use of valleys could be advantageous, as known spin- and orbital-mixing mechanis…
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Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital degeneracy that arises from the symmetry of the hexagonal crystal structure. The use of valleys could be advantageous, as known spin- and orbital-mixing mechanisms are unlikely to be at work for valleys, promising more robust qubits. The Berry curvature associated with valley states allows for electrical control of their energies, suggesting routes for coherent qubit manipulation. However, the relaxation time of valley states -- which ultimately limits these qubits' coherence properties and therefore their suitability as practical qubits -- is not yet known. Here, we measure the characteristic relaxation times of these spin and valley states in gate-defined bilayer graphene quantum dot devices. Different valley states can be distinguished from each other with a fidelity of over 99%. The relaxation time between valley triplets and singlets exceeds 500ms, and is more than one order of magnitude longer than for spin states. This work facilitates future measurements on valley-qubit coherence, demonstrating bilayer graphene as a practical platform hosting electrically controlled long-lived valley qubits.
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Submitted 23 January, 2024; v1 submitted 3 April, 2023;
originally announced April 2023.
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Counting Statistics of Single Electron Transport in Bilayer Graphene Quantum Dots
Authors:
Rebekka Garreis,
Jonas Daniel Gerber,
Veronika Stará,
Chuyao Tong,
Carolin Gold,
Marc Röösli,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Ensslin,
Thomas Ihn,
Annika Kurzmann
Abstract:
We measure telegraph noise of current fluctuations in an electrostatically defined quantum dot in bilayer graphene by real-time detection of single electron tunneling with a capacitively coupled neighboring quantum dot. Suppression of the second and third cumulant (related to shot noise) in a tunable graphene quantum dot is demonstrated experimentally. With this method we demonstrate the ability t…
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We measure telegraph noise of current fluctuations in an electrostatically defined quantum dot in bilayer graphene by real-time detection of single electron tunneling with a capacitively coupled neighboring quantum dot. Suppression of the second and third cumulant (related to shot noise) in a tunable graphene quantum dot is demonstrated experimentally. With this method we demonstrate the ability to measure very low current and noise levels. Furthermore, we use this method to investigate the first spin excited state, an essential prerequisite to measure spin relaxation.
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Submitted 24 January, 2023; v1 submitted 14 October, 2022;
originally announced October 2022.
