Ultrafast Broadband Strong-Field Tunnelling in Asymmetric Nanogaps for Time-Resolved Nanoscopy
Authors:
Haoqing Ning,
Marios Maimaris,
Jiewen Wei,
Emilie Gérouville,
Evangelos Moutoulas,
Zhu Meng,
Clement Ferchaud,
Dmitry Maslennikov,
Navendu Mondal,
Tong Wang,
Colin Chow,
Aleksandar P. Ivanov,
Joshua B. Edel,
Saif A. Haque,
Misha Ivanov,
Jon P. Marangos,
Dimitra G. Georgiadou,
Artem A. Bakulin
Abstract:
Femtosecond-fast and nanometre-size pulses of electrons are emerging as unique probes for ultrafast dynamics at the nanoscale. Presently, such pulses are achievable only in highly sophisticated ultrafast electron microscopes or equally complex setups involving few-cycle-pulsed lasers with stable carrier-envelope phase (CEP) and nanotip probes. Here, we show that the generation of femtosecond pulse…
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Femtosecond-fast and nanometre-size pulses of electrons are emerging as unique probes for ultrafast dynamics at the nanoscale. Presently, such pulses are achievable only in highly sophisticated ultrafast electron microscopes or equally complex setups involving few-cycle-pulsed lasers with stable carrier-envelope phase (CEP) and nanotip probes. Here, we show that the generation of femtosecond pulses of nanoscale tunnelling electrons can be achieved in any ultrafast optical laboratory, using any (deep-UV to mid-IR) femtosecond laser in combination with photosensitive asymmetric nanogap (PAN) diodes fabricated via easy-to-scale adhesion lithography. The dominant mechanism producing tunnelling electrons in PANs is strong-field emission, which is easily achievable without CEP locking or external bias voltage. We employ PANs to demonstrate ultrafast nanoscopy of metal-halide perovskite quantum dots immobilised inside a 10-nm Al/Au nanogap and to characterise laser pulses across the entire optical region (266-6700 nm). Short electron pulses in PANs open the way towards scalable on-chip femtosecond electron measurements and novel design approaches for integrated ultrafast sensing nanodevices.
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Submitted 21 May, 2024;
originally announced May 2024.
Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing
Authors:
D. G. Georgiadou,
M. Ulmeanu,
M. Kompitsas,
P. Argitis,
M. Kandyla
Abstract:
We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed on the surface of the substrates. A thin (80 nm) layer of ZnO was deposited on the laser-processed silicon surface by pulsed laser deposition, forming a nanost…
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We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed on the surface of the substrates. A thin (80 nm) layer of ZnO was deposited on the laser-processed silicon surface by pulsed laser deposition, forming a nanostructured p-Si/n-ZnO heterojunction. We characterized the structural, optical, and electrical properties of the heterojunction. Electrical I-V measurements on the nanostructured p-Si/n-ZnO device show non-linear electric characteristics with a diode-like behavior. Electrical I-V measurements on a flat p-Si/n-ZnO reference sample show similar characteristics, however the forward current and rectification ratio are improved by orders of magnitude in the nanostructured device. The fabrication method employed in this work can be extended to other homojunctions or heterojunctions for electronic and optoelectronic devices with large surface area.
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Submitted 22 October, 2014;
originally announced October 2014.
