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Tuning the pseudospin polarization of graphene by a pseudo-magnetic field
Authors:
Alexander Georgi,
Peter Nemes-Incze,
Ramon Carrillo-Bastos,
Daiara Faria,
Silvia Viola Kusminskiy,
Dawei Zhai,
Martin Schneider,
Dinesh Subramaniam,
Torge Mashoff,
Nils M. Freitag,
Marcus Liebmann,
Marco Pratzer,
Ludger Wirtz,
Colin R. Woods,
Roman V. Gorbachev,
Yang Cao,
Kostya S. Novoselov,
Nancy Sandler,
Markus Morgenstern
Abstract:
One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable…
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One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable as a redistribution of the local density of states. This can be interpreted as a polarization of graphene's pseudospin due to a strain induced pseudo-magnetic field, in analogy to the alignment of a real spin in a magnetic field. We reveal this sublattice symmetry breaking by tunably straining graphene using the tip of a scanning tunneling microscope. The tip locally lifts the graphene membrane from a SiO$_2$ support, as visible by an increased slope of the $I(z)$ curves. The amount of lifting is consistent with molecular dynamics calculations, which reveal a deformed graphene area under the tip in the shape of a Gaussian. The pseudo-magnetic field induced by the deformation becomes visible as a sublattice symmetry breaking which scales with the lifting height of the strained deformation and therefore with the pseudo-magnetic field strength. Its magnitude is quantitatively reproduced by analytic and tight-binding models, revealing fields of 1000 T. These results might be the starting point for an effective THz valley filter, as a basic element of valleytronics.
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Submitted 6 March, 2017; v1 submitted 18 November, 2016;
originally announced November 2016.
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Apparent rippling with honeycomb symmetry and tunable periodicity observed by scanning tunneling microscopy on suspended graphene
Authors:
A. Georgi,
P. Nemes-Incze,
B. Szafranek,
D. Neumaier,
V. Geringer,
M. Liebmann,
M. Morgenstern
Abstract:
Suspended graphene is difficult to image by scanning probe microscopy due to the inherent van-der-Waals and dielectric forces exerted by the tip which are not counteracted by a substrate. Here, we report scanning tunneling microscopy data of suspended monolayer graphene in constant-current mode revealing a surprising honeycomb structure with amplitude of 50$-$200 pm and lattice constant of 10-40 n…
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Suspended graphene is difficult to image by scanning probe microscopy due to the inherent van-der-Waals and dielectric forces exerted by the tip which are not counteracted by a substrate. Here, we report scanning tunneling microscopy data of suspended monolayer graphene in constant-current mode revealing a surprising honeycomb structure with amplitude of 50$-$200 pm and lattice constant of 10-40 nm. The apparent lattice constant is reduced by increasing the tunneling current $I$, but does not depend systematically on tunneling voltage $V$ or scan speed $v_{\rm scan}$. The honeycomb lattice of the rippling is aligned with the atomic structure observed on supported areas, while no atomic corrugation is found on suspended areas down to the resolution of about $3-4$ pm. We rule out that the honeycomb structure is induced by the feedback loop using a changing $v_{\rm scan}$, that it is a simple enlargement effect of the atomic resolution as well as models predicting frozen phonons or standing phonon waves induced by the tunneling current. Albeit we currently do not have a convincing explanation for the observed effect, we expect that our intriguing results will inspire further research related to suspended graphene.
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Submitted 18 November, 2016; v1 submitted 24 August, 2016;
originally announced August 2016.
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Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopy
Authors:
Silke Hattendorf,
Alexander Georgi,
Marcus Liebmann,
Markus Morgenstern
Abstract:
Graphene flakes are prepared on freshly cleaved mica by exfoliation and studied by scanning tunneling microscopy in ultra high vacuum. On few-layer graphene, a triangular network of partial dislocations separating ABC stacked and ABA stacked graphene was found similar to the networks occasionally visible on freshly cleaved HOPG. We found differences in the electronic structure of ABC and ABA stack…
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Graphene flakes are prepared on freshly cleaved mica by exfoliation and studied by scanning tunneling microscopy in ultra high vacuum. On few-layer graphene, a triangular network of partial dislocations separating ABC stacked and ABA stacked graphene was found similar to the networks occasionally visible on freshly cleaved HOPG. We found differences in the electronic structure of ABC and ABA stacked areas by scanning tunneling spectroscopy, i.e., a pronounced peak at 0.25 eV above the Fermi level exclusively in the ABA areas, which is shown to be responsible for the different apparent heights observed in STM images.
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Submitted 30 October, 2012; v1 submitted 23 July, 2012;
originally announced July 2012.
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Spin properties of 2D semiconductors probed by scanning tunneling microscopy
Authors:
M. Morgenstern,
A. Georgi,
C. Straßer,
C. R. Ast,
S. Becker,
M. Liebmann
Abstract:
The interrelation between spin and charge in semiconductors leads to interesting effects, e.g., the Rashba-type spin-orbit splitting or the exchange enhancement. These properties are proposed to be used in applications such as spin transistors or spin qubits. Probing them on the local scale with the ultimate spatial resolution of the scanning tunneling microscope addresses their susceptibility to…
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The interrelation between spin and charge in semiconductors leads to interesting effects, e.g., the Rashba-type spin-orbit splitting or the exchange enhancement. These properties are proposed to be used in applications such as spin transistors or spin qubits. Probing them on the local scale with the ultimate spatial resolution of the scanning tunneling microscope addresses their susceptibility to disorder directly. Here we review the results obtained on two-dimensional semiconductor systems (2DES). We describe the preparation and characterization of an adequate 2DES which can be probed by scanning tunneling microscopy. It is shown how the electron density and the disorder within the 2DES can be tuned and measured. The observed local density of states of weakly and strongly disordered systems is discussed in detail. It is shown that the weakly disordered 2DES exhibits quantum Hall effect in magnetic field. The corresponding local density of states across a quantum Hall transition is mapped showing the development from localized states to extended states and back to localized states in real space. Decoupling the 2DES from screening electrons of the bulk of the III-V semiconductor leads to a measurable exchange enhancement of up to 0.7 meV which depends on the local spin polarization of the 2DES. At stronger confinement potential, i.e. larger do**, the Rashba spin splitting with $α$ as large as $7\cdot 10^{-11}$eVm is observed as a beating in the density of states in magnetic field. The Rashba spin splitting varies with position by about $\pm 50$% being largest at potential hills.
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Submitted 17 April, 2012;
originally announced April 2012.
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Probing two topological surface bands of Sb2Te3 by spin-polarized photoemission spectroscopy
Authors:
C. Pauly,
G. Bihlmayer,
M. Liebmann,
M. Grob,
A. Georgi,
D. Subramaniam,
M. R. Scholz,
J. Sánchez-Barriga,
A. Varykhalov,
S. Blügel,
O. Rader,
M. Morgenstern
Abstract:
Using high resolution spin- and angle-resolved photoemission spectroscopy, we map the electronic structure and spin texture of the surface states of the topological insulator Sb2Te3. In combination with density functional calculations (DFT), we directly show that Sb2Te3 exhibits a partially occupied, single spin-Dirac cone around the Fermi energy, which is topologically protected. DFT obtains a sp…
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Using high resolution spin- and angle-resolved photoemission spectroscopy, we map the electronic structure and spin texture of the surface states of the topological insulator Sb2Te3. In combination with density functional calculations (DFT), we directly show that Sb2Te3 exhibits a partially occupied, single spin-Dirac cone around the Fermi energy, which is topologically protected. DFT obtains a spin polarization of the occupied Dirac cone states of 80-90%, which is in reasonable agreement with the experimental data after careful background subtraction. Furthermore, we observe a strongly spin-orbit split surface band at lower energy. This state is found at 0.8eV below the Fermi level at the gamma-point, disperses upwards, and disappears at about 0.4eV below the Fermi level into two different bulk bands. Along the gamma-K direction, the band is located within a spin-orbit gap. According to an argument given by Pendry and Gurman in 1975, such a gap must contain a surface state, if it is located away from the high symmetry points of the Brillouin zone. Thus, the novel spin-split state is protected by symmetry, too.
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Submitted 30 October, 2012; v1 submitted 20 January, 2012;
originally announced January 2012.
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Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene
Authors:
V. Geringer,
D. Subramaniam,
A. K. Michel,
B. Szafranek,
D. Schall,
A. Georgi,
T. Mashoff,
D. Neumaier,
M. Liebmann,
M. Morgenstern
Abstract:
Using the recently developed technique of microsoldering, we perform a systematic transport study of the influence of PMMA on graphene flakes revealing a do** effect of up to 3.8x10^12 1/cm^2, but a negligible influence on mobility and gate voltage induced hysteresis. Moreover, we show that the microsoldered graphene is free of contamination and exhibits a very similar intrinsic rippling as ha…
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Using the recently developed technique of microsoldering, we perform a systematic transport study of the influence of PMMA on graphene flakes revealing a do** effect of up to 3.8x10^12 1/cm^2, but a negligible influence on mobility and gate voltage induced hysteresis. Moreover, we show that the microsoldered graphene is free of contamination and exhibits a very similar intrinsic rippling as has been found for lithographically contacted flakes. Finally, we demonstrate a current induced closing of the previously found phonon gap appearing in scanning tunneling spectroscopy experiments, strongly non-linear features at higher bias probably caused by vibrations of the flake and a B-field induced double peak attributed to the 0.Landau level of graphene.
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Submitted 11 December, 2009;
originally announced December 2009.
