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Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field
Authors:
Fabian Cadiz,
Delphine Lagarde,
Bingshan Tao,
Julien Frougier,
Bo Xu,
Henri Jaffrès,
Zhanguo Wang,
Xiufeng Han,
Jean Marie George,
Hélène Carrere,
Andrea Balocchi,
Thierry Amand,
Xavier Marie,
Bernhard Urbaszek,
Yuan Lu,
Pierre Renucci
Abstract:
Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoF…
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Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoFeB/MgO electrode, presenting perpendicular magnetic anisotropy (PMA). We observe a clear asymmetry of the photocurrent measured under respective right and left polarized light that follows the hysteresis of the magnetic layer. The amplitude of this asymmetry at zero magnetic field decreases with increasing temperatures and can be controlled with the bias. Polarization-resolved photoluminescence is detected in parallel while the device is operated as a photodetector. This demonstrates the multifunctional capabilities of the device and gives valuable insights into the spin relaxation of the electrons in the quantum dots.
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Submitted 23 July, 2020;
originally announced July 2020.
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Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
Authors:
P. Barate,
S. Liang,
T. T. Zhang,
J. Frougier,
M. Vidal,
P. Renucci,
X. Devaux,
B. Xu,
H. Jaffrès,
J. M. George,
X. Marie,
M. Hehn,
S. Mangin,
Y. Zheng,
T. Amand,
B. Tao,
X. F. Han,
Z. Wang,
Y. Lu
Abstract:
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for t…
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An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor.
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Submitted 7 April, 2020;
originally announced April 2020.
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Transient magnetic domain wall AC dynamics by means of MOKE microscopy
Authors:
Pablo Domenichini,
Cintia Quinteros,
Mara Granada,
Sophie Collin,
Jean Marie George,
Javier Curiale,
Sebastian Bustingorry,
Maria Gabriela Capeluto,
Gabriela Pasquini
Abstract:
The domain wall response under constant external magnetic fields reveals a complex behavior where sample disorder plays a key role. Furthermore, the response to alternating magnetic fields has only been explored in limited cases and analyzed in terms of the constant field solution. Here we unveil phenomena in the evolution of magnetic domain walls under the application of alternating magnetic fiel…
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The domain wall response under constant external magnetic fields reveals a complex behavior where sample disorder plays a key role. Furthermore, the response to alternating magnetic fields has only been explored in limited cases and analyzed in terms of the constant field solution. Here we unveil phenomena in the evolution of magnetic domain walls under the application of alternating magnetic fields within the creep regime, well beyond a small fuctuation limit of the domain wall position. Magnetic field pulses were applied in ultra-thin ferromagnetic films with perpendicular anisotropy, and the resulting domain wall evolution was characterized by polar magneto-optical Kerr effect microscopy. Whereas the DC characterization is well predicted by the elastic interface model, striking unexpected features are observed under the application of alternating square pulses: magneto-optical images show that after a transient number of cycles, domain walls evolve toward strongly distorted shapes concomitantly with a modification of domain area. The morphology of domain walls is characterized with a roughness exponent when possible and contrasted with alternative observables which result to be more suitable for the characterization of this transient evolution. The final stationary convergence as well as the underlying physics is discussed.
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Submitted 7 March, 2019;
originally announced March 2019.
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Unconventional anomalous Hall effect in 3d/5d multilayers mediated by the nonlocal spin-conductivity
Authors:
T. Huong Dang,
Q. Barbedienne,
Q. D. To,
E. Rongione,
N. Reyren,
F. Godel,
S. Collin,
J. M. George,
H. Jaffrès
Abstract:
We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE originates from the opposite sign of the spin-orbit coupling of Pt compared to Ni. Via advanced simulations methods for the description of the spin-current profiles based on the spin-dependent Boltzmann formalism, we extracted…
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We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE originates from the opposite sign of the spin-orbit coupling of Pt compared to Ni. Via advanced simulations methods for the description of the spin-current profiles based on the spin-dependent Boltzmann formalism, we extracted the spin Hall angle (SHA) of Pt and (Co/Ni) as well as the relevant transport parameters. The extracted SHA for Pt, +20%, is opposite to the one of (Co/Ni), giving rise to an effective AHE inversion for thin (Co/Ni) multilayers (N < 17). The spin Hall angle in Pt is found to be larger than the one previously measured in combined spin-pum** inverse spin-Hall effect experiments in a geometry of current perpendicular to plane. Whereas magnetic proximity effects cannot explain the effect, spin-current leakage and anisotropic electron scattering at Pt/(Co,Ni) interfaces fit the experiments.
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Submitted 5 October, 2020; v1 submitted 10 February, 2019;
originally announced February 2019.
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Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
Authors:
F. Cadiz,
A. Djeffal,
D. Lagarde,
A. Balocchi,
B. S. Tao,
B. Xu,
S. H. Liang,
M. Stoffel,
X. Devaux,
H. Jaffres,
J. M. George,
M. Hehn,
S. Mangin,
H. Carrere,
X. Marie,
T. Amand,
X. F. Han,
Z. G. Wang,
B. Urbaszek,
Y. Lu,
P. Renucci
Abstract:
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi…
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The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.
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Submitted 12 March, 2018;
originally announced March 2018.
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Excess velocity of magnetic domain walls close to the depinning field
Authors:
Nirvana B. Caballero,
Iván Fernández Aguirre,
Lucas J. Albornoz,
Alejandro B. Kolton,
Juan Carlos Rojas-Sánchez,
Sophie Collin,
Jean Marie George,
Rebeca Diaz Pardo,
Vincent Jeudy,
Sebastian Bustingorry,
Javier Curiale
Abstract:
Magnetic field driven domain wall velocities in [Co/Ni] based multilayers thin films have been measured using polar magneto-optic Kerr effect microscopy. The low field results are shown to be consistent with the universal creep regime of domain wall motion, characterized by a stretched exponential growth of the velocity with the inverse of the applied field. Approaching the depinning field from be…
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Magnetic field driven domain wall velocities in [Co/Ni] based multilayers thin films have been measured using polar magneto-optic Kerr effect microscopy. The low field results are shown to be consistent with the universal creep regime of domain wall motion, characterized by a stretched exponential growth of the velocity with the inverse of the applied field. Approaching the depinning field from below results in an unexpected excess velocity with respect to the creep law. We analyze these results using scaling theory to show that this speeding up of domain wall motion can be interpreted as due to the increase of the size of the deterministic relaxation close to the depinning transition. We propose a phenomenological model which allows to accurately fit the observed excess velocity and to obtain characteristic values for the depinning field $H_d$, the depinning temperature $T_d$, and the characteristic velocity scale $v_0$ for each sample.
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Submitted 23 January, 2018; v1 submitted 11 August, 2017;
originally announced August 2017.
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Large amplitude vortex gyration in Permalloy/Bi$_2$Se$_3$-like heterostructures
Authors:
P. N. Skirdkov,
K. A. Zvezdin,
A. D. Belanovsky,
J. M. George,
J. C. Wu,
V. Cros,
A. K. Zvezdin
Abstract:
We consider the excitation of large amplitude gyrotropic vortex core precession in a Permalloy nanodisk by the torques originating from the in-plane microwave current flowing along the interface of the Permalloy/Bi$_2$Se$_3$ heterostructures, in which the huge charge-to-spin conversion ratio is observed \cite{Mellnik-2014}. We consider analytically and by micromagnetic modelling the dependence of…
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We consider the excitation of large amplitude gyrotropic vortex core precession in a Permalloy nanodisk by the torques originating from the in-plane microwave current flowing along the interface of the Permalloy/Bi$_2$Se$_3$ heterostructures, in which the huge charge-to-spin conversion ratio is observed \cite{Mellnik-2014}. We consider analytically and by micromagnetic modelling the dependence of this excitation on the frequency and magnitude of the microwave current. The analogies of the vortex dynamics and the Landau phase transitions theory is demonstrated. These findings open the possibility to excite gyrotropic vortex motion with the current densities far lower than by any other means.
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Submitted 31 August, 2015; v1 submitted 28 February, 2015;
originally announced March 2015.
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Skyrmions at room temperature : From magnetic thin films to magnetic multilayers
Authors:
C. Moreau-Luchaire,
C. Moutafis,
N. Reyren,
J. Sampaio,
N. Van Horne,
C. A. F. Vaz,
K. Bouzehouane,
K. Garcia,
C. Deranlot,
P. Warnicke,
P. Wohlhüter,
J. M. George,
J. Raabe,
V. Cros,
A. Fert
Abstract:
Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interact…
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Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach about 2 mJ/m2 in the case of the Ir/Co/Pt multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged magnetic bubble-like domains in these multilayers. The study of their behavir in magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the Dzyaloshinsskii-Moriya interaction. This discoevry of stable skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.
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Submitted 27 February, 2015;
originally announced February 2015.
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Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
Authors:
S. Liang,
T. T. Zhang,
P. Barate,
J. Frougier,
M. Vidal,
P. Renucci,
B. Xu,
H. Jaffrès,
J. M. George,
X. Devaux,
M. Hehn,
X. Marie,
S. Mangin,
H. Yang,
A. Hallal,
M. Chshiev,
T. Amand,
H. Liu,
D. Liu,
X. Han,
Z. Wang,
Y. Lu
Abstract:
We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence pola…
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We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature.
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Submitted 17 April, 2014;
originally announced April 2014.
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Electrical spin injection and detection in Germanium using three terminal geometry
Authors:
A. Jain,
L. Louahadj,
J. Peiro,
J. C. Le Breton,
C. Vergnaud,
A. Barski,
C. Beigné,
L. Notin,
A. Marty,
V. Baltz,
S. Auffret,
E. Augendre,
H. Jaffrès,
J. M. George,
M. Jamet
Abstract:
In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interfa…
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In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.
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Submitted 18 July, 2011;
originally announced July 2011.
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Electrical spin injection into p-doped quantum dots through a tunnel barrier
Authors:
L. Lombez,
P. Renucci,
P. Gallo,
P. F. Braun,
H. Carrere,
P. H. Binh,
X. Marie,
T. Amand,
B. Urbaszek,
J. L. Gauffier,
T. Camps,
A. Arnoult,
C. Fontaine,
C. Deranlot,
R. Mattana,
H. Jaffres,
J. M. George
Abstract:
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminesc…
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We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at low temperature in a 2T magnetic field, leading to an estimation of the electrical spin injection yield of 35%. Moreover, this electroluminescence circular polarization is stable up to 70 K.
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Submitted 8 January, 2007; v1 submitted 16 October, 2006;
originally announced October 2006.
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Field dependence of magnetization reversal by spin transfer
Authors:
J. Grollier,
V. Cros,
H. Jaffres,
A. Hamzic,
J. M. George,
G. Faini,
J. Ben Youssef,
H. Legall,
A. Fert
Abstract:
We analyse the effect of the applied field (Happl) on the current-driven magnetization reversal in pillar-shaped Co/Cu/Co trilayers, where we observe two different types of transition between the parallel (P) and antiparallel (AP) magnetic configurations of the Co layers. If Happl is weaker than a rather small threshold value, the transitions between P and AP are irreversible and relatively shar…
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We analyse the effect of the applied field (Happl) on the current-driven magnetization reversal in pillar-shaped Co/Cu/Co trilayers, where we observe two different types of transition between the parallel (P) and antiparallel (AP) magnetic configurations of the Co layers. If Happl is weaker than a rather small threshold value, the transitions between P and AP are irreversible and relatively sharp. For Happl exceding the threshold value, the same transitions are progressive and reversible. We show that the criteria for the stability of the P and AP states and the experimentally observed behavior can be precisely accounted for by introducing the current-induced torque of the spin transfer models in a Landau-Lifschitz-Gilbert equation. This approach also provides a good description for the field dependence of the critical currents.
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Submitted 18 November, 2002;
originally announced November 2002.
