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Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Authors:
Sumner B. Harris,
Arpan Biswas,
Seok Joon Yun,
Christopher M. Rouleau,
Alexander A. Puretzky,
Rama K. Vasudevan,
David B. Geohegan,
Kai Xiao
Abstract:
Synthesis of thin films has traditionally relied upon slow, sequential processes carried out with substantial human intervention, frequently utilizing a mix of experience and serendipity to optimize material structure and properties. With recent advances in autonomous systems which combine synthesis, characterization, and decision making with artificial intelligence (AI), large parameter spaces ca…
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Synthesis of thin films has traditionally relied upon slow, sequential processes carried out with substantial human intervention, frequently utilizing a mix of experience and serendipity to optimize material structure and properties. With recent advances in autonomous systems which combine synthesis, characterization, and decision making with artificial intelligence (AI), large parameter spaces can be explored autonomously at rates beyond what is possible by human experimentalists, greatly accelerating discovery, optimization, and understanding in materials synthesis which directly address the grand challenges in synthesis science. Here, we demonstrate autonomous synthesis of a contemporary 2D material by combining the highly versatile pulsed laser deposition (PLD) technique with automation and machine learning (ML). We incorporated in situ and real-time spectroscopy, a high-throughput methodology, and cloud connectivity to enable autonomous synthesis workflows with PLD. Ultrathin WSe2 films were grown using co-ablation of two targets and showed a 10x increase in throughput over traditional PLD workflows. Gaussian process regression and Bayesian optimization were used with in situ Raman spectroscopy to autonomously discover two distinct growth windows and the process-property relationship after sampling only 0.25% of a large 4D parameter space. Any material that can be grown with PLD could be autonomously synthesized with our platform and workflows, enabling accelerated discovery and optimization of a vast number of materials.
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Submitted 16 August, 2023;
originally announced August 2023.
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A High-Performance Quasi-1D MoS$_2$ Nanoribbon Photodetector
Authors:
Ganesh Ghimire,
Rajesh Kumar Ulaganathan,
Agnes Tempez,
Oleksii Ilchenko,
Raymond R. Unocic,
Julian Heske,
Denys I. Miakota,
Cheng Xiang,
Marc Chaigneau,
Tim Booth,
Peter Bøggild,
Kristian S. Thygesen,
David B. Geohegan,
Stela Canulescu
Abstract:
Molybdenum disulfide (MoS$_2$) nanoribbons have attracted increased interest due to their properties which can be tailored by tuning their dimensions. Herein, we demonstrate the growth of highly crystalline quasi-one-dimensional (1D)MoS$_2$ nanoribbons and aligned 3D triangular crystals with predominantly 3R or 2H stacking orientation. The synthesis method relies on the reaction between an ultra-t…
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Molybdenum disulfide (MoS$_2$) nanoribbons have attracted increased interest due to their properties which can be tailored by tuning their dimensions. Herein, we demonstrate the growth of highly crystalline quasi-one-dimensional (1D)MoS$_2$ nanoribbons and aligned 3D triangular crystals with predominantly 3R or 2H stacking orientation. The synthesis method relies on the reaction between an ultra-thin MoO3-x film grown by Pulsed Laser Deposition (PLD) and NaF in a sulfur-rich environment. The quasi-1D MoS$_2$ nanoribbons can reach several micrometres in length, and feature single-layer (1L) edges aligned with the nanoribbon core, thereby forming a 1L-multilayer (ML) homojunction due to abrupt discontinuity in thickness. The 1L edges of the nanostructures show a pronounced second harmonic generation (SHG) due to the symmetry breaking, in contrast to the centrosymmetric ML structure, which is unsusceptible to the second-order nonlinear process. A pronounced splitting of the Raman spectra was observed in quasi-1D MoS$_2$ nanoribbons arising from distinct contributions from the 2D edges and a multilayer core. Nanoscale imaging reveals the blue-shifted exciton emission of the monolayer nanoribbon compared to the triangular MoS$_2$ counterpart due to built-in local strain and disorder. We further report on a versatile and ultrasensitive photodetector made of a single quasi-1D MoS$_2$ nanoribbon with a maximum responsivity of 872 A/W at the wavelength of 532 nm. The optoelectronic performance of the MoS$_2$ nanoribbon is superior to the previously reported single-nanoribbon photodetectors. Our findings can inspire the design of TMD semiconductors with tunable geometries for efficient optoelectronic devices.
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Submitted 2 April, 2023;
originally announced April 2023.
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Fluctuation-driven, topology-stabilized order in a correlated nodal semimetal
Authors:
Nathan C. Drucker,
Thanh Nguyen,
Fei Han,
Xi Luo,
Nina Andrejevic,
Ziming Zhu,
Grigory Bednik,
Quynh T. Nguyen,
Zhantao Chen,
Linh K. Nguyen,
Travis J. Williams,
Matthew B. Stone,
Alexander I. Kolesnikov,
Songxue Chi,
Jaime Fernandez-Baca,
Tom Hogan,
Ahmet Alatas,
Alexander A. Puretzky,
David B. Geohegan,
Shengxi Huang,
Yue Yu,
Mingda Li
Abstract:
The interplay between strong electron correlation and band topology is at the forefront of condensed matter research. As a direct consequence of correlation, magnetism enriches topological phases and also has promising functional applications. However, the influence of topology on magnetism remains unclear, and the main research effort has been limited to ground state magnetic orders. Here we repo…
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The interplay between strong electron correlation and band topology is at the forefront of condensed matter research. As a direct consequence of correlation, magnetism enriches topological phases and also has promising functional applications. However, the influence of topology on magnetism remains unclear, and the main research effort has been limited to ground state magnetic orders. Here we report a novel order above the magnetic transition temperature in magnetic Weyl semimetal (WSM) CeAlGe. Such order shows a number of anomalies in electrical and thermal transport, and neutron scattering measurements. We attribute this order to the coupling of Weyl fermions and magnetic fluctuations originating from a three-dimensional Seiberg-Witten monopole, which qualitatively agrees well with the observations. Our work reveals a prominent role topology may play in tailoring electron correlation beyond ground state ordering, and offers a new avenue to investigate emergent electronic properties in magnetic topological materials.
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Submitted 19 July, 2023; v1 submitted 15 March, 2021;
originally announced March 2021.
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Signature of Many-Body Localization of Phonons in Strongly Disordered Superlattices
Authors:
Thanh Nguyen,
Nina Andrejevic,
Hoi Chun Po,
Qichen Song,
Yoichiro Tsurimaki,
Nathan C. Drucker,
Ahmet Alatas,
Ercan E. Alp,
Bogdan M. Leu,
Alessandro Cunsolo,
Yong Q. Cai,
Lijun Wu,
Joseph A. Garlow,
Yimei Zhu,
Hong Lu,
Arthur C. Gossard,
Alexander A. Puretzky,
David B. Geohegan,
Shengxi Huang,
Mingda Li
Abstract:
Many-body localization (MBL) has attracted significant attention due to its immunity to thermalization, role in logarithmic entanglement entropy growth, and opportunities to reach exotic quantum orders. However, experimental realization of MBL in solid-state systems has remained challenging. Here we report evidence of a possible phonon MBL phase in disordered GaAs/AlAs superlattices. Through grazi…
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Many-body localization (MBL) has attracted significant attention due to its immunity to thermalization, role in logarithmic entanglement entropy growth, and opportunities to reach exotic quantum orders. However, experimental realization of MBL in solid-state systems has remained challenging. Here we report evidence of a possible phonon MBL phase in disordered GaAs/AlAs superlattices. Through grazing-incidence inelastic X-ray scattering, we observe a strong deviation of the phonon population from equilibrium in samples doped with ErAs nanodots at low temperature, signaling a departure from thermalization. This behavior occurs within finite phonon energy and wavevector windows, suggesting a localization-thermalization crossover. We support our observation by proposing a theoretical model for the effective phonon Hamiltonian in disordered superlattices, and showing that it can be mapped exactly to a disordered 1D Bose-Hubbard model with a known MBL phase. Our work provides momentum-resolved experimental evidence of phonon localization, extending the scope of MBL to disordered solid-state systems.
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Submitted 14 September, 2021; v1 submitted 5 August, 2020;
originally announced August 2020.
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Deep Learning Analysis of Defect and Phase Evolution During Electron Beam Induced Transformations in WS2
Authors:
Artem Maksov,
Ondrej Dyck,
Kai Wang,
Kai Xiao,
David B. Geohegan,
Bobby G. Sumpter,
Rama K. Vasudevan,
Stephen Jesse,
Sergei V. Kalinin,
Maxim Ziatdinov
Abstract:
Understanding elementary mechanisms behind solid-state phase transformations and reactions is the key to optimizing desired functional properties of many technologically relevant materials. Recent advances in scanning transmission electron microscopy (STEM) allow the real-time visualization of solid-state transformations in materials, including those induced by an electron beam and temperature, wi…
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Understanding elementary mechanisms behind solid-state phase transformations and reactions is the key to optimizing desired functional properties of many technologically relevant materials. Recent advances in scanning transmission electron microscopy (STEM) allow the real-time visualization of solid-state transformations in materials, including those induced by an electron beam and temperature, with atomic resolution. However, despite the ever-expanding capabilities for high-resolution data acquisition, the inferred information about kinetics and thermodynamics of the process and single defect dynamics and interactions is minima, due to the inherent limitations of manual ex-situ analysis of the collected volumes of data. To circumvent this problem, we developed a deep learning framework for dynamic STEM imaging that is trained to find the structures (defects) that break a crystal lattice periodicity and apply it for map** solid state reactions and transformations in layered WS2 doped with Mo. This framework allows extracting thousands of lattice defects from raw STEM data (single images and movies) in a matter of seconds, which are then classified into different categories using unsupervised clustering methods. We further expanded our framework to extract parameters of diffusion for the sulfur vacancies and analyzed transition probabilities associated with switching between different configurations of defect complexes consisting of Mo dopant and sulfur vacancy, providing insight into point defect dynamics and reactions. This approach is universal and its application to beam induced reactions allows map** chemical transformation pathways in solids at the atomic level.
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Submitted 16 August, 2018; v1 submitted 14 March, 2018;
originally announced March 2018.
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Map** mesoscopic phase evolution during e-beam induced transformations via deep learning of atomically resolved images
Authors:
Rama K. Vasudevan,
Nouamane Laanait,
Erik M. Ferragut,
Kai Wang,
David B. Geohegan,
Kai Xiao,
Maxim A. Ziatdinov,
Stephen Jesse,
Ondrej E. Dyck,
Sergei V. Kalinin
Abstract:
Understanding transformations under electron beam irradiation requires map** the structural phases and their evolution in real time. To date, this has mostly been a manual endeavor comprising of difficult frame-by-frame analysis that is simultaneously tedious and prone to error. Here, we turn towards the use of deep convolutional neural networks (DCNN) to automatically determine the Bravais latt…
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Understanding transformations under electron beam irradiation requires map** the structural phases and their evolution in real time. To date, this has mostly been a manual endeavor comprising of difficult frame-by-frame analysis that is simultaneously tedious and prone to error. Here, we turn towards the use of deep convolutional neural networks (DCNN) to automatically determine the Bravais lattice symmetry present in atomically-resolved images. A DCNN is trained to identify the Bravais lattice class given a 2D fast Fourier transform of the input image. Monte-Carlo dropout is used for determining the prediction probability, and results are shown for both simulated and real atomically-resolved images from scanning tunneling microscopy and scanning transmission electron microscopy. A reduced representation of the final layer output allows to visualize the separation of classes in the DCNN and agrees with physical intuition. We then apply the trained network to electron beam-induced transformations in WS2, which allows tracking and determination of growth rate of voids. These results are novel in two ways: (1) It shows that DCNNs can be trained to recognize diffraction patterns, which is markedly different from the typical "real image" cases, and (2) it provides a method with in-built uncertainty quantification, allowing the real-time analysis of phases present in atomically resolved images.
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Submitted 28 February, 2018;
originally announced February 2018.
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Room-Temperature Electron-Hole Liquid in Monolayer MoS2
Authors:
Yiling Yu,
Alexander Bataller,
Robert Younts,
Yifei Yu,
Guoqing Li,
Alexander A. Puretzky,
David B. Geohegan,
Kenan Gundogdu,
Linyou Cao
Abstract:
Excitons in semiconductors are usually non interacting and behave like an ideal gas, but may condense to a strongly correlated liquid like state, i.e. electron hole liquid (EHL), at high density and appropriate temperature. EHL is a macroscopic quantum state with exotic properties and represents the ultimate attainable charge excitation density in steady states. It bears great promise for a variet…
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Excitons in semiconductors are usually non interacting and behave like an ideal gas, but may condense to a strongly correlated liquid like state, i.e. electron hole liquid (EHL), at high density and appropriate temperature. EHL is a macroscopic quantum state with exotic properties and represents the ultimate attainable charge excitation density in steady states. It bears great promise for a variety of fields such as ultrahigh power photonics and quantum science and technology. However, the condensation of gas like excitons to EHL has often been restricted to cryogenic temperatures, which significantly limits the prospect of EHL for use in practical applications. Herein we demonstrate the formation of EHL at room temperature in monolayer MoS2 by taking advantage of the monolayer's extraordinarily strong exciton binding energy. This work demonstrates the potential for the liquid like state of charge excitations to be a useful platform for the studies of macroscopic quantum phenomena and the development of optoelectronic devices.
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Submitted 28 September, 2019; v1 submitted 26 October, 2017;
originally announced October 2017.
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High conduction hop** behavior induced in transition metal dichalcogenides by percolating defect networks: toward atomically thin circuits
Authors:
Michael G. Stanford,
Pushpa R. Pudasaini,
Elisabeth T. Gallmeier,
Nicholas Cross,
Liangbo Liang,
Akinola Oyedele,
Gerd Duscher,
Masoud Mahjouri-Samani,
Kai Wang,
Kai Xiao,
David B. Geohegan,
Alex Belianinov,
Bobby G. Sumpter,
Philip D. Rack
Abstract:
Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, we report tunable transport behavior which was introduced into single layer tungsten diselen…
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Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, we report tunable transport behavior which was introduced into single layer tungsten diselenide and tungsten disulfide by focused He$^+$ irradiation. Pseudo-metallic behavior was induced by irradiating the materials with a dose of ~1x10$^{16} He^+/cm^2$ to introduce defect states, and subsequent temperature-dependent transport measurements suggest a nearest neighbor hop** mechanism is operative. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal that Se is sputtered preferentially, and extended percolating networks of edge states form within WSe$_2$ at a critical dose of 1x10$^{16} He^+/cm^2$. First-principles calculations confirm the semiconductor-to-metallic transition of WSe$_2$ after pore and edge defects were introduced by He$^+$ irradiation. The hop** conduction was utilized to direct-write resistor loaded logic circuits in WSe$_2$ and WS$_2$ with a voltage gain of greater than 5. Edge contacted thin film transistors were also fabricated with a high on/off ratio (> 10$^6$), demonstrating potential for the formation of atomically thin circuits.
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Submitted 23 September, 2017; v1 submitted 15 May, 2017;
originally announced May 2017.
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Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus
Authors:
Xi Ling,
Liangbo Liang,
Shengxi Huang,
Alexander A. Puretzky,
David B. Geohegan,
Bobby G. Sumpter,
**g Kong,
Vincent Meunier,
Mildred S. Dresselhaus
Abstract:
As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. The breathing modes are assigned to Ag symmetry by the laser polarization dependenc…
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As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. The breathing modes are assigned to Ag symmetry by the laser polarization dependence study and group theory analysis. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are much more sensitive to interlayer coupling and thus their frequencies show much stronger dependence on the number of layers. Hence, they could be used as effective means to probe both the crystalline orientation and thickness for few-layer BP. Furthermore, the temperature dependence study shows that the breathing modes have a harmonic behavior, in contrast to HF Raman modes which are known to exhibit anharmonicity.
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Submitted 26 February, 2015;
originally announced February 2015.
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Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures
Authors:
Yifei Yu,
Shi Hu,
Liqin Su,
Lujun Huang,
Yi Liu,
Zhenghe **,
Alexander A. Purezky,
David B. Geohegan,
Ki Wook Kim,
Yong Zhang,
Linyou Cao
Abstract:
Semiconductor heterostructures provide a powerful platform for the engineering of excitons. Here we report the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and nonepitaxial hetero…
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Semiconductor heterostructures provide a powerful platform for the engineering of excitons. Here we report the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and nonepitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and the appearance of an extra absorption peak at low energy region. The MoS2/WS2 heterostructures show weak interlayer coupling and can essentially act as atomicscale heterojunctions with the intrinsic bandstructures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise unprecedented capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.
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Submitted 1 March, 2015; v1 submitted 24 March, 2014;
originally announced March 2014.
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Investigation of Gd3N@C2n (40 < n < 44) family by Raman and inelastic electron tunneling spectroscopy
Authors:
Brian G. Burke,
Jack Chan,
Keith A. Williams,
Jiechao Ge,
Chunying Shu,
Wujun Fu,
Harry C. Dorn,
James G. Kushmerick,
Alexander A. Puretzky,
David B. Geohegan
Abstract:
The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and universal force field (UFF) calculations. Hindered rotations, shown by both theory and experiment, indicate the formation of a Gd3N-C80 bond which reduces the ideal icosahedral symmetry of the C80 cage. The vibrational mod…
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The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and universal force field (UFF) calculations. Hindered rotations, shown by both theory and experiment, indicate the formation of a Gd3N-C80 bond which reduces the ideal icosahedral symmetry of the C80 cage. The vibrational modes involving the movement of the encapsulated species are a fingerprint of the interaction between the fullerene cage and the core complex. We present Raman data for the Gd3N@C2n (40 < n < 44) family as well as Y3N@C80, Lu3N@C80, and Y3N@C88 for comparison. Conductance measurements have been performed on Gd3N@C80 and reveal a Kondo effect similar to that observed in C60.
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Submitted 27 October, 2009;
originally announced October 2009.
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Raman study of Fano interference in p-type doped silicon
Authors:
Brian G. Burke,
Jack Chan,
Keith A. Williams,
Zili Wu,
Alexander A. Puretzky,
David B. Geohegan
Abstract:
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) int…
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As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra-violet (325 nm). The asymmetry in the one-phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one-dimensional critical point (E = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications.
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Submitted 27 October, 2009;
originally announced October 2009.
