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Universal kinetics of the stochastic formation of polarization domain structures in a uniaxial single-crystal ferroelectric
Authors:
Olga Y. Mazur,
Leonid I. Stefanovich,
Yuri A. Genenko
Abstract:
Initial conditions after quenching from a high-temperature paraelectric phase to a low-temperature ferroelectric phase have a substantial impact on the temporal development and formation of stable polarization domain structures which eventually determine physical properties and the functionality of ferroelectrics. Based on the recently advanced exactly solvable model of the stochastic domain struc…
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Initial conditions after quenching from a high-temperature paraelectric phase to a low-temperature ferroelectric phase have a substantial impact on the temporal development and formation of stable polarization domain structures which eventually determine physical properties and the functionality of ferroelectrics. Based on the recently advanced exactly solvable model of the stochastic domain structure kinetics in a uniaxial ferroelectric [Phys. Rev. B 107, 144109 (2023)], we study the effect of the magnitude of the initial disorder, its initial correlation length and polarization correlation function on the system evolution. For different shapes of the initial correlation function, the time-dependent correlation length and the two-point polarization correlation coefficient are calculated analytically demonstrating universal features and a good agreement with the available experimental data. Particularly, the magnitude of the charge density correlation function reveals a strong reduction of the bound charges at the nominally charged domain walls which was recently observed experimentally in uniaxial ferroelectrics. Consequently, the integrodifferential equations of evolution for the polarization correlation function and the mean polarization are numerically solved for different initial conditions. The temporal dependence of the polarization mean value and variance are evaluated demonstrating the bifurcation behavior depending on the applied electric field. The impact of the initial state properties on the coercive field deciding between the single- and multi-domain final states of the system is disclosed.
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Submitted 7 November, 2023;
originally announced November 2023.
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On the statistical correlations of random polarization and electric depolarization fields in ferroelectrics
Authors:
Yuri A. Genenko,
Olga Y. Mazur,
Leonid I. Stefanovich
Abstract:
A conceptual problem of the electric-field mediated polarization correlations during a stochastic formation of polarization domain structure in ferroelectrics is addressed by using an exactly solvable stochastic model of polarization development in a uniaxial ferroelectric [Phys. Rev. B 107, 144109 (2023)]. A full set of time-dependent two-point correlation coefficients between all random variable…
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A conceptual problem of the electric-field mediated polarization correlations during a stochastic formation of polarization domain structure in ferroelectrics is addressed by using an exactly solvable stochastic model of polarization development in a uniaxial ferroelectric [Phys. Rev. B 107, 144109 (2023)]. A full set of time-dependent two-point correlation coefficients between all random variables is derived analytically, evaluated numerically and presented graphically in 3D. They are particularly required for the analysis of nonlinear phenomena involving spatial dispersion like optical second harmonic generation and scattering.
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Submitted 21 September, 2023;
originally announced September 2023.
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Stochastic theory of ferroelectric domain structure formation dominated by quenched disorder
Authors:
Olga Y. Mazur,
Leonid I. Stefanovich,
Yuri A. Genenko
Abstract:
A self-consistent stochastic model of domain structure formation in a uniaxial ferroelectric, quenched from a high-temperature paraelectric phase to a low-temperature ferroelectric phase, is developed with an account of the applied electric field and the feedback effect via local depolarization fields. Both polarization and field components are considered as Gauss random variables. A system of int…
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A self-consistent stochastic model of domain structure formation in a uniaxial ferroelectric, quenched from a high-temperature paraelectric phase to a low-temperature ferroelectric phase, is developed with an account of the applied electric field and the feedback effect via local depolarization fields. Both polarization and field components are considered as Gauss random variables. A system of integro-differential equations for correlation functions of all involved variables is derived and solved analytically and numerically. Phase diagram in terms of the average value and dispersion of polarization reveals different possible equilibrium states and available final single-domain and multi-domain states. The time-dependent evolution of the average polarization and dispersion discloses a bifurcation behavior and the temperature-dependent value of the electric field, deciding between the single-domain and multi-domain final states, which can be interpreted as the coercive field. Analytical and numerical results for the time-dependent correlation length and correlation functions exhibit plausible agreement with available experimental data.
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Submitted 19 April, 2023;
originally announced April 2023.
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Ferroelectric Polycrystals: Structural and microstructural levers for property engineering via domain-wall dynamics
Authors:
J. Schultheiß,
G. Picht,
J. Wang,
Y. A. Genenko,
L. Q. Chen,
J. E. Daniels,
J. Koruza
Abstract:
Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and actuators. The key to tuning their dielectric, piezoelectric, and electromechanical performance is to control the domain structure and the dynamics of the domain wa…
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Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and actuators. The key to tuning their dielectric, piezoelectric, and electromechanical performance is to control the domain structure and the dynamics of the domain walls. In fixed compositions, this is often realized by chemical do**. In addition, structural and microstructural parameters, such as grain size, degree of crystallographic texture or porosity play a key role. A major breakthrough in the field came with the fundamental understanding of the link between the local electric and mechanical driving forces and domain wall motion. Here, the impact of structure and microstructure on these driving forces is reviewed and an engineering toolbox is introduced. An overview of advances in the understanding of domain wall motion on the micro- and nanoscale is provided and discussed in terms of the macroscopic functional performance of polycrystalline ferroelectrics/ferroelastics. In addition, a link to theoretical and computational models is established. The review concludes with a discussion about beyond state-of-the-art characterization techniques, new approaches, and future directions toward non-conventionally ordered ferroelectrics for next-generation nanoelectronics and energy-storage applications.
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Submitted 24 August, 2022;
originally announced August 2022.
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Dynamic scaling properties of multistep polarization response in ferroelectrics
Authors:
Yuri A. Genenko,
Sergey Zhukov,
Maohua Zhang,
Ke Wang,
Jurij Koruza
Abstract:
Ferroelectrics are multifunctional smart materials finding applications in sensor technology, micromechanical actuation, digital information storage etc. Their most fundamental property is the ability of polarization switching under applied electric field. In particular, understanding of switching kinetics is essential for digital information storage. In this regard, scaling properties of the temp…
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Ferroelectrics are multifunctional smart materials finding applications in sensor technology, micromechanical actuation, digital information storage etc. Their most fundamental property is the ability of polarization switching under applied electric field. In particular, understanding of switching kinetics is essential for digital information storage. In this regard, scaling properties of the temporal polarization response are well-known for 180°-switching processes in ferroelectrics characterized by a unique field-dependent local switching time. Unexpectedly, these properties were now observed in multiaxial polycrystalline ferroelectrics, exhibiting a number of parallel and sequential non-180°-switching processes with distinct switching times. This behaviour can be explained by a combination of the multistep stochastic mechanism and the inhomogeneous field mechanism models of polarization reversal. Scaling properties are predicted for polycrystalline ferroelectrics of tetragonal, rhombohedral and orthorhombic symmetries and exemplarily demonstrated by measurements of polarization kinetics in (K,Na)NbO3-based ferroelectric ceramic over a timescale of 7 orders of magnitude. Dynamic scaling properties allow insight into the microscopic switching mechanisms, on the one hand, and into statistical material characteristics, on the other hand, providing thereby the description of temporal polarization with high accuracy. The gained deeper insight into the mechanisms of multistep polarization switching is crucial for future ultrafast and multilevel digital information storage.
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Submitted 31 March, 2022;
originally announced March 2022.
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Multi-step stochastic mechanism of polarization reversal in orthorhombic ferroelectrics
Authors:
Yuri A. Genenko,
Maohua Zhang,
Ivan S. Vorotiahin,
Ruben Khachaturyan,
Yi-Xuan Liu,
Jia-Wang Li,
Ke Wang,
Jurij Koruza
Abstract:
A stochastic model of electric field-driven polarization reversal in orthorhombic ferroelectrics is advanced, providing a description of their temporal electromechanical response. The theory accounts for all possible parallel and sequential switching events. Application of the model to the simultaneous measurements of polarization and strain kinetics in a lead-free orthorhombic (K,Na)NbO3-based fe…
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A stochastic model of electric field-driven polarization reversal in orthorhombic ferroelectrics is advanced, providing a description of their temporal electromechanical response. The theory accounts for all possible parallel and sequential switching events. Application of the model to the simultaneous measurements of polarization and strain kinetics in a lead-free orthorhombic (K,Na)NbO3-based ferroelectric ceramic over a wide timescale of 7 orders of magnitude allowed identification of preferable polarization switching paths, fractions of individual switching processes, and their activation fields. Particularly, the analysis revealed substantial contributions of coherent non-180° switching events, which do not cause macroscopic strain and thus mimic 180° switching processes.
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Submitted 1 September, 2021;
originally announced September 2021.
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Control of domain states in rhombohedral PZT films via misfit strains and surface charges
Authors:
I. S. Vorotiahin,
A. N. Morozovska,
E. A. Eliseev,
Y. A. Genenko
Abstract:
Using the Landau-Ginzburg-Devonshire theory, an influence of the misfit strain and surface screening charges, as well as the role of the flexoelectric effect, have been studied by numerical modelling in the case of a rhombohedral lead zirconate-titanate ferroelectric/ferroelastic thin film with an anisotropic misfit produced by a substrate. It was established that the magnitude and sign of the mis…
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Using the Landau-Ginzburg-Devonshire theory, an influence of the misfit strain and surface screening charges, as well as the role of the flexoelectric effect, have been studied by numerical modelling in the case of a rhombohedral lead zirconate-titanate ferroelectric/ferroelastic thin film with an anisotropic misfit produced by a substrate. It was established that the magnitude and sign of the misfit strain influence the domain structure and predominant directions of the polarization vector, providing misfit-dependent phases with different favourable polarization components. Whilst strong enough compressive misfit strains favour a phase with an orthorhombic-like polarization directions, strong tensile misfits only yield in-plane polarization components. The strength of surface screening is seen to condition the existence of closure domain structures and, by increasing, supports the single-domain state depending on the value of the misfit strain. The flexoelectric effect exhibits a weak influence on the phase diagram of multi-domain states when compared with the phase diagram of single-domain states. Its effect, however, becomes significant in the case of skyrmion topological states, which spontaneously form near the film surface when compressive misfit strains are applied. Cooperative influence of the misfit strain, surface screening charges and temperature can set a thin rhombohedral ferroelectric film into a number of different polar and structural states, whereby the role of the flexoelectric effect is pronounced for topologically nontrivial structures.
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Submitted 10 April, 2021; v1 submitted 14 November, 2020;
originally announced November 2020.
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Multi-step stochastic mechanism of polarization reversal in rhombohedral ferroelectrics
Authors:
Yuri A. Genenko,
Ruben Khachaturyan,
Ivan S. Vorotiahin,
Jan Schultheiß,
John E. Daniels,
Anna Grünebohm,
Jurij Koruza
Abstract:
A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr,Ti)O3 ceramic over a wide time window allows identification of preferable switching paths, fractions of indiv…
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A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr,Ti)O3 ceramic over a wide time window allows identification of preferable switching paths, fractions of individual switching processes, and their activation fields. Complementary, the phenomenological Landau-Ginzburg-Devenshire theory is used to analyze the impact of external field and stress on switching barriers showing that residual mechanical stress may promote the fast switching.
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Submitted 3 August, 2020; v1 submitted 10 April, 2020;
originally announced April 2020.
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Mesoscopic theory of defect ordering-disordering transitions in thin oxide films
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Dmitry V. Karpinsky,
Maxim V. Silibin,
Rama Vasudevan,
Sergei V. Kalinin,
Yuri A. Genenko
Abstract:
Ordering of mobile defects in functional materials can give rise to fundamentally new phases possessing ferroic and multiferroic functionalities. Here we develop the Landau theory for strain induced ordering of defects (e.g. oxygen vacancies) in thin oxide films, considering both the ordering and wavelength of possible instabilities. Using derived analytical expressions for the energies of various…
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Ordering of mobile defects in functional materials can give rise to fundamentally new phases possessing ferroic and multiferroic functionalities. Here we develop the Landau theory for strain induced ordering of defects (e.g. oxygen vacancies) in thin oxide films, considering both the ordering and wavelength of possible instabilities. Using derived analytical expressions for the energies of various defect-ordered states, we calculated and analyzed phase diagrams dependence on the film-substrate mismatch strain, concentration of defects, and Vegard coefficients. Obtained results open possibilities to create and control superstructures of ordered defects in thin oxide films by selecting the appropriate substrate and defect concentration.
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Submitted 8 December, 2020; v1 submitted 1 November, 2019;
originally announced November 2019.
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Hierarchy of Domain Reconstruction Processes due to Charged Defect Migration in Acceptor Doped Ferroelectrics
Authors:
Ivan S. Vorotiahin,
Anna N. Morozovska,
Yuri A. Genenko
Abstract:
Evolution of a stripe array of polarization domains triggered by the oxygen vacancy migration in an acceptor doped ferroelectric is investigated in a self-consistent manner. A comprehensive model based on the Landau-Ginzburg-Devonshire approach includes semiconductor features due to the presence of electrons and holes, and effects of electrostriction and flexoelectricity especially significant nea…
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Evolution of a stripe array of polarization domains triggered by the oxygen vacancy migration in an acceptor doped ferroelectric is investigated in a self-consistent manner. A comprehensive model based on the Landau-Ginzburg-Devonshire approach includes semiconductor features due to the presence of electrons and holes, and effects of electrostriction and flexoelectricity especially significant near the free surface and domain walls. A domain array spontaneously formed in the absence of an external field is shown to undergo a reconstruction in the course of the gradual oxygen vacancy migration driven by the depolarization fields. The charge defect accumulation near the free ferroelectric surface causes a series of phenomena: (i) symmetry breaking between the positive and negative c-domains, (ii) appearance of an effective dipole layer at the free surface followed by the formation of a surface electrostatic potential, (iii) tilting and recharging of the domain walls, especially pronounced at higher acceptor concentrations. An internal bias field determined by the gain in the free energy of the structure exhibits dependences of its amplitude on time and dopant concentration well comparable with available experimental results on aging in BaTiO3.
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Submitted 4 July, 2019;
originally announced July 2019.
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Stochastic model of dispersive multi-step polarization switching in ferroelectrics due to spatial electric field distribution
Authors:
Ruben Khachaturyan,
Jan Schultheiss,
Jurij Koruza,
Yuri A. Genenko
Abstract:
A stochastic model for polarization switching in tetragonal ferroelectric ceramics is introduced, which includes sequential 90°- and parallel 180°-switching processes and accounts for the dispersion of characteristic switching times due to a nonuniform spatial distribution of the applied field. It presents merging of the recent multistep stochastic mechanism (MSM) with the earlier nucleation limit…
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A stochastic model for polarization switching in tetragonal ferroelectric ceramics is introduced, which includes sequential 90°- and parallel 180°-switching processes and accounts for the dispersion of characteristic switching times due to a nonuniform spatial distribution of the applied field. It presents merging of the recent multistep stochastic mechanism (MSM) with the earlier nucleation limited switching (NLS) and inhomogeneous field mechanism (IFM) models. The new model provides a much better description of simultaneous polarization and strain responses over a wide time window and a deeper insight into the microscopic switching mechanisms, as is exemplarily shown by comparison with measurements on lead zirconate titanate.
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Submitted 26 April, 2019;
originally announced April 2019.
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Stochastic multi-step polarization switching in ferroelectrics
Authors:
Y. A. Genenko,
R. Khachaturyan,
J. Schultheiss,
A. Ossipov,
J. E. Daniels,
J. Koruza
Abstract:
Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a new nucleation and growth multi-step model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180°-switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization…
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Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a new nucleation and growth multi-step model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180°-switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization and strain, performed on a tetragonal Pb(Zr,Ti)O3 ceramic in a wide range of electric fields over a time domain of five orders of the magnitude. It allows the determination of the fractions of individual switching processes, their characteristic switching times, activation fields, and respective Avrami indices.
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Submitted 9 January, 2018;
originally announced January 2018.
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Defect driven flexo-chemical coupling in thin ferroelectric films
Authors:
Eugene A. Eliseev,
Ivan. S. Vorotiahin,
Yevhen M. Fomichov,
Maya D. Glinchuk,
Sergei V. Kalinin,
Yuri A. Genenko,
Anna N. Morozovska
Abstract:
Using Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectro-chemical coupling on the size effects inpolar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The…
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Using Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectro-chemical coupling on the size effects inpolar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The defective surface of the film is not covered with an electrode, but instead with an ultra-thin layer of ambient screening charges, characterized by a surface screening length. This geometry is typical for the scanning probe piezoelectric force microscopy. Obtained results revealed an unexpectedly strong effect of the joint action of Vegard stresses and flexoelectric effect (shortly flexo-chemical coupling) on the ferroelectric transition temperature, distribution of the spontaneous polarization and elastic fields, domain wall structure and period in thin PbTiO3 films containing a layer of elastic defects. A nontrivial result is the ferroelectricity persisting at film thicknesses below 4 nm, temperatures lower than 350 K and relatively high surface screening length (~0.1 nm). The origin of this phenomenon is the re-building of the domain structure in the film (namely the cross-over from c-domain stripes to a-type closure domains) when its thickness decreases below 4 nm, conditioned by the flexoelectric coupling and facilitated by negative Vegard effect. For positive Vegard effect, thicker films exhibit the appearance of pronounced maxima on the thickness dependence of the transition temperature, whose position and height can be controlled by the defect type and concentration. The revealed features may have important implications for miniaturization of ferroelectric-based devices.
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Submitted 2 August, 2017;
originally announced August 2017.
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Experimental and theoretical study of AC losses in variable asymmetrical magnetic environments
Authors:
S. T. Ranecky,
H. Watanabe,
J. Ogawa,
T. Oka,
D. Goelden,
L. Alff,
Y. A. Genenko
Abstract:
Measurements of AC losses in a HTS-tape placed in between of two bulk magnetic shields of high permeability were performed by applying calorimetric techniques for various asymmetrical shielding arrangements. The experiment was supported by analytical calculations and finite-element simulations of the field and current distributions, based on the Bean model of the critical state. The simulated curr…
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Measurements of AC losses in a HTS-tape placed in between of two bulk magnetic shields of high permeability were performed by applying calorimetric techniques for various asymmetrical shielding arrangements. The experiment was supported by analytical calculations and finite-element simulations of the field and current distributions, based on the Bean model of the critical state. The simulated current and field profiles perfectly reproduce the analytic solutions known for certain shielding geometries. The evaluation of the consequent AC losses exhibits good agreement with measurements for the central position of the tape between the magnets but increasing discrepancy when the tape is approaching the shields. This can be explained by the increasing contribution of the eddy currents and magnetic hysteresis losses in the conducting shields.
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Submitted 15 May, 2017;
originally announced May 2017.
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Tuning the Polar States of Ferroelectric Films via Surface Charges and Flexoelectricity
Authors:
Ivan S. Vorotiahin,
Eugene A. Eliseev,
Qian Li,
Sergei V. Kalinin,
Yuri A. Genenko,
Anna N. Morozovska
Abstract:
Using the self-consistent Landau-Ginzburg-Devonshire approach we simulate and analyze the spontaneous formation of the domain structure in thin ferroelectric films covered with the surface screening charge of the specific nature (Bardeen-type surface states). Hence we consider the competition between the screening and the domain formation as alternative ways to reduce the electrostatic energy and…
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Using the self-consistent Landau-Ginzburg-Devonshire approach we simulate and analyze the spontaneous formation of the domain structure in thin ferroelectric films covered with the surface screening charge of the specific nature (Bardeen-type surface states). Hence we consider the competition between the screening and the domain formation as alternative ways to reduce the electrostatic energy and reveal unusual peculiarities of distributions of polarization, electric and elastic fields conditioned by the surface screening length and the flexocoupling strength. We have established that the critical thickness of the film and its transition temperature to a paraelectric phase strongly depend on the Bardeen screening length, while the flexocoupling affects the polarization rotation and closure domain structure and induces ribbon-like nano-scale domains in the film depth far from the top open surface. Hence the joint action of the surface screening (originating from e.g. the adsorption of ambient ions or surface states) and flexocoupling may remarkably modify polar and electromechanical properties of thin ferroelectric films.
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Submitted 1 April, 2017;
originally announced April 2017.
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Flexocoupling impact on the kinetics of polarization reversal
Authors:
Ivan S. Vorotiahin,
Anna N. Morozovska,
Eugene A. Eliseev,
Yuri A. Genenko
Abstract:
The impact of flexoelectric coupling on polarization reversal kinetics and space charge dynamics in thin films of ferroelectric-semiconductors has been theoretically studied. The relaxation-type Landau-Khalatnikov equation together with the Poisson equation and the theory of elasticity equations have been used to calculate in a self-consistent way the spatial-temporal development of ferroelectric…
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The impact of flexoelectric coupling on polarization reversal kinetics and space charge dynamics in thin films of ferroelectric-semiconductors has been theoretically studied. The relaxation-type Landau-Khalatnikov equation together with the Poisson equation and the theory of elasticity equations have been used to calculate in a self-consistent way the spatial-temporal development of ferroelectric polarization, electric potential and space charge, elastic stresses, strains and their gradients. The analysis of the obtained results reveals a moderate increase of the flexocoupling influence on the polarization, elastic strain, electric potential and space charge distribution dynamics with the decrease of a ferroelectric film thickness. In contrast, the dependence of polarization switching time on the applied electric field is strongly affected by the flexocoupling strength. The polarization reversal process consists typically of two stages, the first stage has no characteristic time, while the second one exhibits a switching time strongly dependent on the applied electric field.
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Submitted 19 July, 2016;
originally announced July 2016.
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Fatigue effect on polarization switching dynamics in polycrystalline bulk ferroelectrics
Authors:
S. Zhukov,
J. Glaum,
H. Kungl,
E. Sapper,
R. Dittmer,
Y. A. Genenko,
H. von Seggern
Abstract:
Statistical distribution of switching times is a key information necessary to describe the dynamic response of a polycrystalline bulk ferroelectric to an applied electric field. The Inhomogeneous Field Mechanism (IFM) model offers a useful tool which allows extraction of this information from polarization switching measurements over a large time window. In this paper, the model was further develop…
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Statistical distribution of switching times is a key information necessary to describe the dynamic response of a polycrystalline bulk ferroelectric to an applied electric field. The Inhomogeneous Field Mechanism (IFM) model offers a useful tool which allows extraction of this information from polarization switching measurements over a large time window. In this paper, the model was further developed to account for the presence of non-switchable regions in fatigued materials. Application of the IFM- analysis to bipolar electric cycling induced fatigue process of various lead-based and lead-free ferroelectric ceramics reveals different scenarios of property degradation. Insight is gained into different underlying fatigue mechanisms inherent to the investigated systems.
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Submitted 11 July, 2016; v1 submitted 24 May, 2016;
originally announced May 2016.
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Flexocoupling impact on the size effects of piezo- response and conductance in mixed-type ferroelectrics-semiconductors under applied pressure
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Yuri A. Genenko,
Ivan S. Vorotiahin,
Maxim V. Silibin,
Ye Cao,
Yunseok Kim,
Maya D. Glinchuk,
Sergei V. Kalinin
Abstract:
Flexocoupling impact on the size effects of the spontaneous polarization, effective piezo-response, elastic strain and compliance, carrier concentration and piezo-conductance have been calculated in thin films of ferroelectric semiconductors with mixed-type conductivity under applied pressure. Analysis of the self-consistent calculation results revealed that the thickness dependences of aforementi…
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Flexocoupling impact on the size effects of the spontaneous polarization, effective piezo-response, elastic strain and compliance, carrier concentration and piezo-conductance have been calculated in thin films of ferroelectric semiconductors with mixed-type conductivity under applied pressure. Analysis of the self-consistent calculation results revealed that the thickness dependences of aforementioned physical quantities, calculated at zero and nonzero flexoelectric couplings, are very similar under zero applied pressure, but become strongly different under the application of external pressure pext. At that the differences become noticeably stronger for the film surface under compression than under tension. The impact of the Vegard mechanism on the size effects is weaker in comparison with flexocoupling except for the thickness dependence of the piezo-conductance. Without flexoelectric coupling the studied physical quantities manifest conventional peculiarities that are characteristic of the size-induced phase transitions. Namely, when the film thickness h approaches the critical thickness hcr the transition to paraelectric phase occurs. The combined effect of flexoelectric coupling and external pressure induces polarizations at the film surfaces, which cause the electric built-in field that destroys the thickness-induced phase transition to paraelectric phase at h= hcr and induces the electret-like state with irreversible spontaneous polarization at h<hcr. The built-in field leads to noticeable increase of the average strain and elastic compliance under the film thickness decrease below hcr that scales as 1/h at small thicknesses h. The changes of the electron concentration by several orders of magnitude under positive or negative pressures can lead to the occurrence of high- or low-conductivity states, i.e. the nonvolatile piezo-resistive switching.
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Submitted 13 May, 2016;
originally announced May 2016.
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Finite-element simulations of hysteretic ac losses in a magnetically coated superconducting tubular wire subject to an oscillating transverse magnetic field
Authors:
Y. A. Genenko,
H. Rauh,
S. Kurdi
Abstract:
Numerical simulations of hysteretic ac losses in a tubular superconductor/paramagnet heterostructure subject to an oscillating transverse magnetic field are performed within the quasistatic approach, calling upon the COMSOL finite-element software package and exploiting magnetostatic-electrostatic analogues. It is shown that one-sided magnetic shielding of a thin, type-II superconducting tube by a…
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Numerical simulations of hysteretic ac losses in a tubular superconductor/paramagnet heterostructure subject to an oscillating transverse magnetic field are performed within the quasistatic approach, calling upon the COMSOL finite-element software package and exploiting magnetostatic-electrostatic analogues. It is shown that one-sided magnetic shielding of a thin, type-II superconducting tube by a coaxial paramagnetic support results in a slight increase of hysteretic ac losses as compared to those for a vacuum environment, when the support is placed inside; a spectacular shielding effect with a possible reduction of hysteretic ac losses by orders of magnitude, however, ensues, depending on the magnetic permeability and the amplitude of the applied magnetic field, when the support is placed outside.
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Submitted 5 June, 2015;
originally announced June 2015.
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Macro- and microscopic properties of strontium doped indium oxide
Authors:
Y. M. Nikolaenko,
Y. E. Kuzovlev,
Y. V. Medvedev,
N. I. Mezin,
C. Fasel,
A. Gurlo,
L. Schlicker,
T. J. M. Bayer,
Y. A. Genenko
Abstract:
Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different do** levels at different temperatures (T=20-300 C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to inc…
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Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different do** levels at different temperatures (T=20-300 C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the do** level increase from zero up to x=10%. The conductance variation due to do** is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn2O4. An unusual property of high level (x=10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100-200 C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3x10^(-13) cm^2/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.
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Submitted 24 July, 2014;
originally announced July 2014.
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Magnetic cloaking by a paramagnet/superconductor cylindrical tube in the critical state
Authors:
S. V. Yampolskii,
Y. A. Genenko
Abstract:
Cloaking of static magnetic fields by a finite thickness type-II superconductor tube being in the full critical state and surrounded by a coaxial paramagnet shell is studied. On the basis of exact solutions to the Maxwell equations, it is shown that, additionally to previous studies assuming the Meissner state of the superconductor constituent, perfect cloaking is still realizable at fields higher…
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Cloaking of static magnetic fields by a finite thickness type-II superconductor tube being in the full critical state and surrounded by a coaxial paramagnet shell is studied. On the basis of exact solutions to the Maxwell equations, it is shown that, additionally to previous studies assuming the Meissner state of the superconductor constituent, perfect cloaking is still realizable at fields higher than the field of full flux penetration into the superconductor and for arbitrary geometrical parameters of both constituents. It is also proven that simultaneously the structure is fully undetectable under the cloaking conditions. Differently from the case of the Meissner state the cloaking properties in the application relevant critical state are realized, however, only at a certain field magnitude.
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Submitted 31 March, 2014;
originally announced March 2014.
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Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields
Authors:
Yuri A. Genenko,
Ofer Hirsch,
Paul Erhart
Abstract:
Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screeni…
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Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screening due to electronic band bending and due to presence of intrinsic defects leads to asymmetric space charge regions near the grain boundary, which produce an effective dipole layer at the surface of the grain. This results in the formation of a potential difference between the grain surface and its interior of the order of 1 V, which can be of either sign depending on defect transition levels and concentrations. Exemplary acceptor do** of BaTiO3 is shown to allow tuning of the said surface potential in the region between 0.1 and 1.3 V.
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Submitted 12 February, 2014;
originally announced February 2014.
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Magnetic detectability of a finite size paramagnet/superconductor cylindrical cloak
Authors:
S. V. Yampolskii,
Y. A. Genenko
Abstract:
Cloaking of static magnetic fields by a finite thickness type-II superconductor tube surrounded by a coaxial paramagnet shell is studied. On the basis of exact solutions to the London and Maxwell equations, it is shown that perfect cloaking is realizable for arbitrary geometrical parameters including the thin film case for both constituents. In contrast to previous approximate studies assuming per…
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Cloaking of static magnetic fields by a finite thickness type-II superconductor tube surrounded by a coaxial paramagnet shell is studied. On the basis of exact solutions to the London and Maxwell equations, it is shown that perfect cloaking is realizable for arbitrary geometrical parameters including the thin film case for both constituents. In contrast to previous approximate studies assuming perfect diamagnetism of the superconductor constituent, it is proven that cloaking provides simultaneously full undetectability, that is the magnetic moment of the structure completely vanishes as well as all high-order multipole moments as soon as the uniform field outside remains unaffected.
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Submitted 15 January, 2014;
originally announced January 2014.
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Superconducting wires under simultaneous oscillating sources: involved magnetic response, dissipation of energy and low pass filtering
Authors:
H. S. Ruiz,
A. Badía -Majós,
Yu. A. Genenko,
S. V. Yampolskii,
H. Rauh
Abstract:
Numerical simulations of filamentary type II superconducting wires under simultaneous AC transport current and oscillating transverse magnetic fields are performed within the critical state approximation. The time dependences of the current density profiles, magnetic flux lines, local power dissipation and magnetic moment are featured. Noticeable non-homogeneous dissipation and field distortions a…
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Numerical simulations of filamentary type II superconducting wires under simultaneous AC transport current and oscillating transverse magnetic fields are performed within the critical state approximation. The time dependences of the current density profiles, magnetic flux lines, local power dissipation and magnetic moment are featured. Noticeable non-homogeneous dissipation and field distortions are displayed. Also, significant differences between the obtained AC-losses and those predicted by regular approximation formulas are reported. Finally, an outstanding low pass filtering effect intrinsic to the magnetic response of the system is described.
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Submitted 2 August, 2011;
originally announced August 2011.
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Self-consistent model of unipolar transport in organic semiconductor diodes: accounting for a realistic density-of-states distribution
Authors:
S. V. Yampolskii,
Yu. A. Genenko,
c. Melzer,
H. von Seggern
Abstract:
A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are discussed exemplarily on the basis of an…
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A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are discussed exemplarily on the basis of an indium tin oxide/organic semiconductor/metallic conductor structure. A comparison of the theory to experimental data of a unipolar indium tin oxide/poly-3-hexyl-thiophene/Al device is presented.
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Submitted 9 March, 2011;
originally announced March 2011.
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Hysteretic ac losses in a superconductor strip between flat magnetic shields
Authors:
Yu. A. Genenko,
H. Rauh
Abstract:
Hysteretic ac losses in a thin, current-carrying superconductor strip located between two flat magnetic shields of infinite permeability are calculated using Bean's model of the critical state. For the shields oriented parallel to the plane of the strip, penetration of the self-induced magnetic field is enhanced, and the current dependence of the ac loss resembles that in an isolated superconduc…
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Hysteretic ac losses in a thin, current-carrying superconductor strip located between two flat magnetic shields of infinite permeability are calculated using Bean's model of the critical state. For the shields oriented parallel to the plane of the strip, penetration of the self-induced magnetic field is enhanced, and the current dependence of the ac loss resembles that in an isolated superconductor slab, whereas for the shields oriented perpendicular to the plane of the strip, penetration of the self-induced magnetic field is impaired, and the current dependence of the ac loss is similar to that in a superconductor strip flanked by two parallel superconducting shields. Thus, hysteretic ac losses can strongly augment or, respectively, wane when the shields approach the strip.
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Submitted 17 December, 2009;
originally announced December 2009.
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Aging of poled ferroelectric ceramics due to relaxation of random depolarization fields by space-charge accumulation near grain boundaries
Authors:
Yu. A. Genenko,
J. Glaum,
O. Hirsch,
H. Kungl,
M. J. Hoffmann,
T. Granzow
Abstract:
Migration of charged point defects triggered by the local random depolarization field is shown to plausibly explain aging of poled ferroelectric ceramics providing reasonable time and acceptor concentration dependences of the emerging internal bias field. The theory is based on the evaluation of the energy of the local depolarization field caused by mismatch of the polarizations of neighbor grai…
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Migration of charged point defects triggered by the local random depolarization field is shown to plausibly explain aging of poled ferroelectric ceramics providing reasonable time and acceptor concentration dependences of the emerging internal bias field. The theory is based on the evaluation of the energy of the local depolarization field caused by mismatch of the polarizations of neighbor grains. The kinetics of charge migration assumes presence of mobile oxygen vacancies in the material due to the intentional or unintentional acceptor do**. Satisfactory agreement of the theory with experiment on the Fe-doped lead zirconate titanate is demonstrated.
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Submitted 17 December, 2009;
originally announced December 2009.
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Charge carrier injection into insulating media: single-particle versus mean-field approach
Authors:
Yu. A. Genenko,
S. V. Yampolskii,
C. Melzer,
K. Stegmaier,
H. von Seggern
Abstract:
Self-consistent, mean-field description of charge injection into a dielectric medium is modified to account for discreteness of charge carriers. The improved scheme includes both the Schottky barrier lowering due to the individual image charge and the barrier change due to the field penetration into the injecting electrode that ensures validity of the model at both high and low injection rates i…
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Self-consistent, mean-field description of charge injection into a dielectric medium is modified to account for discreteness of charge carriers. The improved scheme includes both the Schottky barrier lowering due to the individual image charge and the barrier change due to the field penetration into the injecting electrode that ensures validity of the model at both high and low injection rates including the barrier dominated and the space-charge dominated regimes. Comparison of the theory with experiment on an unipolar ITO/PPV/Au-device is presented.
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Submitted 22 January, 2010; v1 submitted 21 October, 2009;
originally announced October 2009.
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The Bean model of the critical state in a magnetically shielded superconductor filament
Authors:
S. V. Yampolskii,
Yu. A. Genenko,
H. Rauh,
A. V. Snezhko
Abstract:
We study the magnetization of a cylindrical type-II superconductor filament covered by a coaxial soft-magnet sheath and exposed to an applied transverse magnetic field. Examining penetration of magnetic flux into the superconductor core of the filament on the basis of the Bean model of the critical state, we find that the presence of a non-hysteretic magnetic sheath can strongly enhance the fiel…
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We study the magnetization of a cylindrical type-II superconductor filament covered by a coaxial soft-magnet sheath and exposed to an applied transverse magnetic field. Examining penetration of magnetic flux into the superconductor core of the filament on the basis of the Bean model of the critical state, we find that the presence of a non-hysteretic magnetic sheath can strongly enhance the field of full penetration of magnetic flux. The average magnetization of the superconductor/magnet heterostructure under consideration and hysteresis AC losses in the core of the filament are calculated as well.
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Submitted 8 December, 2008;
originally announced December 2008.
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Bipolar charge-carrier injection in semiconductor/insulator/conductor heterostructures: self-consistent consideration
Authors:
S. V. Yampolskii,
Yu. A. Genenko,
C. Melzer,
K. Stegmaier,
H. von Seggern
Abstract:
A self-consistent model of bipolar charge-carrier injection and transport processes in a semiconductor/insulator/conductor system is developed which incorporates space-charge effects in the description of the injection process. The amount of charge-carriers injected is strongly determined by the energy barrier emerging at the contact, but at the same time the electrostatic potential generated by…
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A self-consistent model of bipolar charge-carrier injection and transport processes in a semiconductor/insulator/conductor system is developed which incorporates space-charge effects in the description of the injection process. The amount of charge-carriers injected is strongly determined by the energy barrier emerging at the contact, but at the same time the electrostatic potential generated by the injected charge-carriers modifies the height of this injection barrier itself. In our model, self-consistency is obtained by assuming continuity of the electric displacement and of the electrochemical potential all over the system. The constituents of the system are properly taken into account by means of their respective density of state distributions. The consequences resulting from our model are discussed on the basis of an indium tin oxide/organic semiconductor/conductor structure. The distributions of the charge carriers and the electric field through the electrodes and the organic layer are calculated. The recombination- and current-voltage characteristics are analyzed for different heights of injection barriers and varying values of the recombination rate and compared with the measured current-voltage dependences for an indium tin oxide/poly(phenylene vinylene)/Ca structure. The voltage dependences of the recombination efficiency for the different values of injection barriers and recombination rate reveal optimum conditions for the device performance.
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Submitted 26 November, 2008;
originally announced November 2008.
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Space-charge mechanism of aging in ferroelectrics: an exactly solvable two-dimensional model
Authors:
Yuri A. Genenko
Abstract:
A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the e…
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A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol%; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.
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Submitted 14 November, 2008;
originally announced November 2008.
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Drift of charged defects in local fields as aging mechanism in ferroelectrics
Authors:
Yuri A. Genenko,
Doru C. Lupascu
Abstract:
Point defect migration is considered as a mechanism for aging in ferroelectrics. Numerical results are given for the coupled problems of point defect migration and electrostatic energy relaxation in a 2D domain configuration. The peak values of the clam** pressure at domain walls are in the range of $10^6$ Pa, which corresponds to macroscopically observed coercive stresses in perovskite ferroe…
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Point defect migration is considered as a mechanism for aging in ferroelectrics. Numerical results are given for the coupled problems of point defect migration and electrostatic energy relaxation in a 2D domain configuration. The peak values of the clam** pressure at domain walls are in the range of $10^6$ Pa, which corresponds to macroscopically observed coercive stresses in perovskite ferroelectrics. The effect is compared to mechanisms involving orientational reordering of defect dipoles in the bulk of domains. Domain clam** is significantly stronger in the drift mechanism than in the orientational picture for the same material parameters.
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Submitted 19 April, 2007;
originally announced April 2007.
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Self consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems
Authors:
F. Neumann,
Y. A. Genenko,
C. Melzer,
H. von Seggern
Abstract:
A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density of states distributions. This approach leads to differential equations for the electric field which have to be solved in a self consistent manner by considerin…
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A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density of states distributions. This approach leads to differential equations for the electric field which have to be solved in a self consistent manner by considering the continuity of the electric displacement and the electrochemical potential in the complete system. The model is capable of describing the current-voltage characteristics of the metal/insulator/metal system in forward and reverse bias for arbitrary values of the metal/ insulator injection barriers. In the case of high injection barriers, approximations are provided offering a tool for comparison with experiments. Numerical calculations are performed exemplary using a simplified model of an organic semiconductor.
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Submitted 18 April, 2007;
originally announced April 2007.
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Superconductor strip in a closed magnetic environment: exact analytic representation of the critical state
Authors:
Y. A. Genenko,
H. Rauh
Abstract:
An exact analytic representation of the critical state of a current-carrying type-II superconductor strip located inside a cylindrical magnetic cavity of high permeability is derived. The obtained results show that, when the cavity radius is small, penetration of magnetic flux fronts is strongly reduced as compared to the situation in an isolated strip. From our generic representation it is poss…
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An exact analytic representation of the critical state of a current-carrying type-II superconductor strip located inside a cylindrical magnetic cavity of high permeability is derived. The obtained results show that, when the cavity radius is small, penetration of magnetic flux fronts is strongly reduced as compared to the situation in an isolated strip. From our generic representation it is possible to establish current profiles in closed cavities of various other geometries too by means of conformal map** of the basic configuration addressed.
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Submitted 10 April, 2007;
originally announced April 2007.
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Self-consistent analytical solution of a problem of charge-carrier injection at a conductor/insulator interface
Authors:
F. Neumann,
Y. A. Genenko,
C. Melzer,
S. V. Yampolskii,
H. von Seggern
Abstract:
We present a closed description of the charge carrier injection process from a conductor into an insulator. Common injection models are based on single electron descriptions, being problematic especially once the amount of charge-carriers injected is large. Accordingly, we developed a model, which incorporates space charge effects in the description of the injection process. The challenge of thi…
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We present a closed description of the charge carrier injection process from a conductor into an insulator. Common injection models are based on single electron descriptions, being problematic especially once the amount of charge-carriers injected is large. Accordingly, we developed a model, which incorporates space charge effects in the description of the injection process. The challenge of this task is the problem of self-consistency. The amount of charge-carriers injected per unit time strongly depends on the energy barrier emerging at the contact, while at the same time the electrostatic potential generated by the injected charge- carriers modifies the height of this injection barrier itself. In our model, self-consistency is obtained by assuming continuity of the electric displacement and the electrochemical potential all over the conductor/insulator system. The conductor and the insulator are properly taken into account by means of their respective density of state distributions. The electric field distributions are obtained in a closed analytical form and the resulting current-voltage characteristics show that the theory embraces injection-limited as well as bulk-limited charge-carrier transport. Analytical approximations of these limits are given, revealing physical mechanisms responsible for the particular current-voltage behavior. In addition, the model exhibits the crossover between the two limiting cases and determines the validity of respective approximations. The consequences resulting from our exactly solvable model are discussed on the basis of a simplified indium tin oxide/organic semiconductor system.
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Submitted 27 March, 2007;
originally announced March 2007.
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Penetration of an external magnetic field into a multistrip superconductor/soft-magnet heterostructure
Authors:
S. V. Yampolskii,
Yu. A. Genenko,
H. Rauh
Abstract:
The magnetization of a planar heterostructure of periodically alternating type-II superconductor and soft-magnet strips exposed to a transverse external magnetic field is studied. An integral equation governing the sheet current distribution in the Meissner state of the superconductor constituents is derived. The field of complete penetration of magnetic flux in the critical state of the superco…
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The magnetization of a planar heterostructure of periodically alternating type-II superconductor and soft-magnet strips exposed to a transverse external magnetic field is studied. An integral equation governing the sheet current distribution in the Meissner state of the superconductor constituents is derived. The field of complete penetration of magnetic flux in the critical state of the superconductor constituents is calculated for different widths of the superconductor and the soft-magnet constituents and a range of values of the relative permeability of the soft-magnet constituents.
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Submitted 4 December, 2006;
originally announced December 2006.
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Entry of magnetic flux into a magnetically shielded type-II superconductor filament
Authors:
S. V. Yampolskii,
Yu. A. Genenko
Abstract:
In the framework of the London approximation the magnetic flux penetration into a type-II superconductor filament surrounded by a soft-magnet sheath and exposed to a transverse external magnetic field is studied. The lower transverse critical field as well as the critical field and the critical current of the first vortex nucleation at the superconductor/magnet interface are calculated on the ba…
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In the framework of the London approximation the magnetic flux penetration into a type-II superconductor filament surrounded by a soft-magnet sheath and exposed to a transverse external magnetic field is studied. The lower transverse critical field as well as the critical field and the critical current of the first vortex nucleation at the superconductor/magnet interface are calculated on the basis of an exact solution for a vortex of arbitrary plane configuration. The Bean-Livingston barrier against the vortex nucleation is shown to strongly depend on the magnet sheath parameters.
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Submitted 14 December, 2004;
originally announced December 2004.
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Distribution of the sheet current in a magnetically shielded superconducting filament
Authors:
S. V. Yampolskii,
Yu. A. Genenko,
H. Rauh
Abstract:
The distribution of the transport current in a superconducting filament aligned parallel to the flat surface of a semi-infinite bulk magnet is studied theoretically. An integral equation governing the current distribution in the Meissner state of the filament is derived and solved numerically for various filament-magnet distances and different relative permeabilities. This reveals that the curre…
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The distribution of the transport current in a superconducting filament aligned parallel to the flat surface of a semi-infinite bulk magnet is studied theoretically. An integral equation governing the current distribution in the Meissner state of the filament is derived and solved numerically for various filament-magnet distances and different relative permeabilities. This reveals that the current is depressed on the side of the filament adjacent to the surface of the magnet and enhanced on the averted side. Substantial current redistributions in the filament can already occur for low values of the relative permeability of the magnet, when the distance between the filament and the magnet is short, with evidence of saturation at moderately high values of this quantity, similar to the findings for magnetically shielded strips.
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Submitted 5 April, 2004;
originally announced April 2004.
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Virgin magnetization of a magnetically shielded superconductor wire: theory and experiment
Authors:
Yu. A. Genenko,
S. V. Yampolskii,
A. V. Pan
Abstract:
On the basis of exact solutions to the London equation the magnetic moment of a type II superconductor filament surrounded by a soft-magnet environment is calculated and the procedure of extracting the superconductor contribution from magnetic measurements is suggested. Comparison of theoretical results with experiments on MgB_2/Fe wires allows estimation of the value of critical current for the…
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On the basis of exact solutions to the London equation the magnetic moment of a type II superconductor filament surrounded by a soft-magnet environment is calculated and the procedure of extracting the superconductor contribution from magnetic measurements is suggested. Comparison of theoretical results with experiments on MgB_2/Fe wires allows estimation of the value of critical current for the first magnetic flux penetration.
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Submitted 12 March, 2004; v1 submitted 12 January, 2004;
originally announced January 2004.
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The Bean-Livingston barrier at a superconductor/magnet interface
Authors:
Yu. A. Genenko,
H. Rauh,
S. V. Yampolskii
Abstract:
The Bean-Livingston barrier at the interface of type-II superconductor/soft-magnet heterostructures is studied on the basis of the classical London approach. This shows a characteristic dependence on the geometry of the particular structure and its interface as well as on the relative permeability of the involved magnetic constituent. The modification of the barrier by the presence of the magnet…
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The Bean-Livingston barrier at the interface of type-II superconductor/soft-magnet heterostructures is studied on the basis of the classical London approach. This shows a characteristic dependence on the geometry of the particular structure and its interface as well as on the relative permeability of the involved magnetic constituent. The modification of the barrier by the presence of the magnet can be significant, as demonstrated for a cylindrical superconducting filament covered with a coaxial magnetic sheath. Using typical values of the relative permeability, the critical field of first penetration of magnetic flux is predicted to be strongly enhanced, whereas the variation of the average critical current density with the external field is strongly depressed, in accord with the observations of recent experiments.
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Submitted 16 February, 2005; v1 submitted 7 November, 2003;
originally announced November 2003.
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Strong reduction of ac losses in a superconductor strip located between superconducting ground plates
Authors:
Yu. A. Genenko
Abstract:
The problem of calculating the ac losses in a superconductor strip with a transport current placed inside superconducting environments is studied analytically in the frame of the critical state model. Exact results obtained by the method of images for the commonly employed flat ground plates are used to derive power losses and, consequently, the nonlinear resistance depending on the ac frequency…
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The problem of calculating the ac losses in a superconductor strip with a transport current placed inside superconducting environments is studied analytically in the frame of the critical state model. Exact results obtained by the method of images for the commonly employed flat ground plates are used to derive power losses and, consequently, the nonlinear resistance depending on the ac frequency, current amplitude and the distance to the ground plates. The resistance is strongly reduced when the distance between the strip and the shields becomes small.
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Submitted 10 July, 2003;
originally announced July 2003.
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Overcritical states of a superconductor strip in a magnetic environment
Authors:
Yu. A. Genenko,
A. Snezhko,
H. C. Freyhardt
Abstract:
A current-carrying superconducting strip partly penetrated by magnetic flux and surrounded by a bulk magnet of high permeability is considered. Two types of samples are studied: those with critical current controlled by an edge barrier dominating over the pinning, and those with high pinning-mediated critical current masking the edge barrier.It is shown for both cases that the current distributi…
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A current-carrying superconducting strip partly penetrated by magnetic flux and surrounded by a bulk magnet of high permeability is considered. Two types of samples are studied: those with critical current controlled by an edge barrier dominating over the pinning, and those with high pinning-mediated critical current masking the edge barrier.It is shown for both cases that the current distribution in a central flux-free part of the strip is strongly affected by the actual shape of the magnetic surroundings. Explicit analytical solutions for the sheet current and self-field distributions are obtained which show that, depending on the geometry, the effect may suppress the total loss-free transport current of the strip or enhance it by orders of magnitude. The effect depends strongly on the shape of the magnet and its distance to the superconductor but only weakly on the magnetic permeability.
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Submitted 17 August, 2000;
originally announced August 2000.
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Large Predicted Self-Field Critical Current Enhancements In Superconducting Strips Using Magnetic Screens
Authors:
Yu. A. Genenko,
A. Usoskin,
H. C. Freyhardt
Abstract:
A transport current distribution over a wide superconducting sheet is shown to strongly change in a presence of bulk magnetic screens of a soft magnet with a high permeability. Depending on the geometry, the effect may drastically suppress or protect the Meissner state of the sheet through the enhancement or suppression of the edge barrier critical current. The total transport current in the mag…
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A transport current distribution over a wide superconducting sheet is shown to strongly change in a presence of bulk magnetic screens of a soft magnet with a high permeability. Depending on the geometry, the effect may drastically suppress or protect the Meissner state of the sheet through the enhancement or suppression of the edge barrier critical current. The total transport current in the magnetically screened Meissner state is expected to compete with the critical current of the flux-filled sheet only for samples whose critical current is initially essentially controlled by the edge barrier effect.
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Submitted 17 August, 2000;
originally announced August 2000.
