Scalable platform for nanocrystal-based quantum electronics
Authors:
Joachim E. Sestoft,
Aske N. Gejl,
Thomas Kanne,
Rasmus D. Schlosser,
Daniel Ross,
Daniel Kjær,
Kasper Grove-Rasmussen,
Jesper Nygård
Abstract:
Unlocking the full potential of nanocrystals in electronic devices requires scalable and deterministic manufacturing techniques. A platform offering promising alternative paths to scalable production is microtomy, the technique of cutting thin lamellae with large areas containing embedded nanostructures. This platform has so far not been used for fabrication of electronic quantum devices. Here, we…
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Unlocking the full potential of nanocrystals in electronic devices requires scalable and deterministic manufacturing techniques. A platform offering promising alternative paths to scalable production is microtomy, the technique of cutting thin lamellae with large areas containing embedded nanostructures. This platform has so far not been used for fabrication of electronic quantum devices. Here, we combine microtomy with vapor-liquid-solid growth of III/V nanowires to create a scalable platform that can deterministically transfer large arrays of single and fused nanocrystals - offering single unit control and free choice of target substrate. We fabricate electronic devices on cross-sectioned InAs nanowires with good yield and demonstrate their ability to exhibit quantum phenomena such as conductance quantization, single electron charging, and wave interference. Finally, we devise how the platform can host rationally designed semiconductor/superconductor networks relevant for emerging quantum technologies.
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Submitted 9 November, 2021;
originally announced November 2021.
Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection
Authors:
Joachim E. Sestoft,
Thomas Kanne,
Aske Nørskov Gejl,
Merlin von Soosten,
Jeremy S. Yodh,
Daniel Sherman,
Brian Tarasinski,
Michael Wimmer,
Erik Johnson,
Mingtang Deng,
Jesper Nygård,
Thomas Sand Jespersen,
Charles M. Marcus,
Peter Krogstrup
Abstract:
The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zi…
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The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zincblende InAs$_{1-x}$Sb$_{x}$ nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies \cite{winkler2016topological}. We show that the epitaxial InAsSb/Al interfaces allows for a hard induced superconducting gap and 2$e$ transport in Coulomb charging experiments, similar to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective $g$-factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zincblende structure.
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Submitted 29 December, 2017; v1 submitted 18 November, 2017;
originally announced November 2017.
