Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects
Authors:
Shih-Chieh Lin,
Cheng-Tai Kuo,
Yu-Cheng Shao,
Yi-De Chuang,
Jaap Geessinck,
Mark Huijben,
Jean-Pascal Rueff,
Ismael L. Graff,
Giuseppina Conti,
Yingying Peng,
Aaron Bostwick,
Eli Rotenberg,
Eric Gullikson,
Slavomír Nemšák,
Arturas Vailionis,
Nicolas Gauquelin,
Johan Verbeeck,
Giacomo Ghiringhelli,
Claus M. Schneider,
Charles S. Fadley
Abstract:
The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a c…
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The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a comprehensive spectroscopic investigation of the depth profile of 2DES-relevant Ti 3d interface carriers using depth- and element-specific techniques, standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within 3 unit cells from the n-type interface in the SrTiO3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first 3 unit cells of the opposing LaAlO3 layer (~10 Å). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO3/SrTiO3 interface have disparate explanations as originating from different types of interface carriers.
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Submitted 29 October, 2020; v1 submitted 21 December, 2019;
originally announced December 2019.
Full control of Co valence in isopolar LaCoO3 / LaTiO3 perovskite heterostructures via interfacial engineering
Authors:
Georgios Araizi-Kanoutas,
Jaap Geessinck,
Nicolas Gauquelin,
Steef Smit,
Xanthe Verbeek,
Shrawan K. Mishra,
Peter Bencok,
Christoph Schlueter,
Tien-Lin Lee,
Dileep Krishnan,
Jo Verbeeck,
Guus Rijnders,
Gertjan Koster,
Mark S. Golden
Abstract:
We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation…
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We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation of the magnetic properties. The experiments prove a deterministically-tunable charge transfer process acting in the LaCoO3 within three unit cells of the heterointerface, able to generate full conversion to 3d7 divalent Co, which displays a paramagnetic ground state. The number of LaTiO3 / LaCoO3 interfaces, the thickness of an additional "break" layer between the LaTiO3 and LaCoO3, and the LaCoO3 film thickness itself in tri-layers provide a trio of sensitive control knobs for the charge transfer process, illustrating the efficacy of O2p-band alignment as a guiding principle for property design in complex oxide heterointerfaces.
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Submitted 11 September, 2019;
originally announced September 2019.
