Showing 1–7 of 7 results for author: Gebert, S

Terahertz cyclotron emission from two-dimensional Dirac fermions

Authors: S. Gebert, C. Consejo, S. S. Krishtopenko, S. Ruffenach, M. Szola, J. Torres, C. Bray, B. Jouault, M. Orlita, X. Baudry, P. Ballet, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized… ▽ More Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized graphene, and so far no cyclotron emission from Dirac fermions has been reported. One way to eliminate this last non-radiative process is to sufficiently modify the dispersion of the Landau levels by opening a small gap in the linear band structure. A proven example of such gapped graphene-like materials are HgTe quantum wells close to the topological phase transition. In this work, we experimentally demonstrate Landau emission from Dirac fermions in such HgTe quantum wells, where the emission is tunable by both the magnetic field and the carrier concentration. Consequently, these results represent an advance in the realization of terahertz Landau lasers tunable by magnetic field and gate-voltage. △ Less

Submitted 14 January, 2023; originally announced January 2023.

Comments: Main text with the figures of the published version

Journal ref: Nature Photonics (2023)

Temperature Dependent Zero-Field Splittings in Graphene

Authors: C. Bray, K. Maussang, C. Consejo, J. A. Delgado-Notario, S. S. Krishtopenko, I. Yahniuk, S. Gebert, S. Ruffenach, K. Dinar, E. Moench, K. Indykiewicz, B. Jouault, J. Torres, Y. M. Meziani, W. Knap, A. Yurgens, S. D. Ganichev, F. Teppe

Abstract: Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupl… ▽ More Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupling of graphene with its boron nitride substrate, compensates intrinsic spin-orbit coupling and decreases the non-trivial topological gap, which may lead to the phase transition into trivial band insulator state. In this work, we present extensive experimental studies of the zero-field splittings in monolayer and bilayer graphene in a temperature range 2K-12K by means of sub-Terahertz photoconductivity-based electron spin resonance technique. Surprisingly, we observe a decrease of the spin splittings with increasing temperature. We discuss the origin of this phenomenon by considering possible physical mechanisms likely to induce a temperature dependence of the spin-orbit coupling. These include the difference in the expansion coefficients between the graphene and the boron nitride substrate or the metal contacts, the electron-phonon interactions, and the presence of a magnetic order at low temperature. Our experimental observation expands knowledge about the non-trivial topological gap in graphene. △ Less

Submitted 23 December, 2022; v1 submitted 28 September, 2022; originally announced September 2022.

Comments: Main text with figures (20 pages) and Supplementary Information (14 pages) Accepted in Phys. Rev. B

Journal ref: Phys. Rev. B 106, 245141 (2022)

Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells

Authors: C. Avogadri, S. Gebert, S. S. Krishtopenko, I. Castillo, C. Consejo, S. Ruffenach, C. Roblin, C. Bray, Y. Krupko, S. Juillaguet, S. Contreras, S. Juillaguet, A. Wolf, F. Hartmann, S. Höfling, G. Boissier, J. B. Rodriguez, S. Nanot, E. Tournié, F. Teppe, B. Jouault

Abstract: Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature… ▽ More Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures. △ Less

Submitted 11 March, 2022; originally announced March 2022.

Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells

Authors: S. S. Krishtopenko, A. M. Kadykov, S. Gebert, S. Ruffenach, C. Consejo, J. Torres, C. Avogadri, B. Jouault, W. Knap, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photocond… ▽ More We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photoconductivity effect. This is striking evidence that in addition to the already well-documented crystalline and interface asymmetries, electron-electron interactions also have a significant impact on the usual behavior of the optical transitions from zero mode Landau levels. △ Less

Submitted 27 April, 2020; v1 submitted 10 December, 2019; originally announced December 2019.

Comments: 5 pages, 4 figures and supplemental materials

Journal ref: Phys. Rev. B 102, 041404 (2020)

High frequency impact ionization and nonlinearity of photocurrent induced by intense terahertz radiation in HgTe-based quantum well structures

Authors: S. Hubmann, G. V. Budkin, A. P. Dmitriev, S. Gebert, V. V. Belkov, E. L. Ivchenko, S. Baumann, M. Otteneder, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, S. D. Ganichev

Abstract: We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show t… ▽ More We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show that the observed photoresponse nonlinearities are caused by the band-to-band \emph{light} impact ionization under conditions of a photon energy less than the forbidden gap. The signature of this kind of impact ionization is that the angular radiation frequency $ω=2πf$ is much higher than the reciprocal momentum relaxation time. Thus, the impact ionization takes place solely because of collisions in the presence of a high-frequency electric field. The effect has been measured on narrow HgTe/CdTe QWs of 5.7\,nm width; the nonlinearity is detected for linearly and circularly polarized THz radiation with different frequencies ranging from $f=0.6$ to 1.07\,THz and intensities up to hundreds of kW/cm$^2$. We demonstrate that the probability of the impact ionization is proportional to the exponential function, $\exp(-E_0^2/E^2)$, of the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. The effect is observable in a wide temperature range from 4.2 to 90\,K, with the characteristic field increasing with rising temperature. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. B 99, 085312 (2019)

Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators

Authors: H. Plank, J. Pernul, S. Gebert, S. N. Danilov, J. König-Otto, S. Winnerl, M. Lanius, J. Kampmeier, G. Mussler, I. Aguilera, D. Grützmacher, S. D. Ganichev

Abstract: We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies th… ▽ More We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies the LPGE emerges due to free carrier Drude-like absorption. The spectra allow to determine the room temperature carrier mobilities in the surface states despite the presents of thermally activate residual impurities in the material bulk. In a number of samples we observed an enhancement of the linear photogalvanic effect at frequencies between 30÷60 THz, which is attributed to the excitation of electrons from helical surface to bulk conduction band states. Under this condition and applying oblique incidence we also observed the circular photogalvanic effect driven by the radiation helicity. △ Less

Submitted 30 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Materials 2, 024202 (2018)

Photogalvanic probing of helical edge channels in 2D HgTe topological insulators

Authors: K. -M. Dantscher, D. A. Kozlov, M. T. Scherr, S. Gebert, J. Baerenfaenger, M. V. Durnev, S. A. Tarasenko, V. V. Bel'kov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in… ▽ More We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality point (CNP), and again rises. Conductance measured over a 7 $μ$m distance at CNP approaches 2e2/h, the value characteristic for ballistic transport in 2D TIs. The data reveal that the photocurrent is caused by photoionization of helical edge electrons to the conduction band. We discuss the microscopic model of this phenomenon and compare calculations with the experimental data. △ Less

Submitted 28 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 95, 201103 (2017)