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Comment on Kuwahara et al., Intensity Interference in a Coherent Spin-Polarized Electron Beam, Phys. Rev. Lett. 126, 125501 (2021)
Authors:
Herman Batelaan,
Sam Keramati,
T. J. Gay
Abstract:
The claim that Kuwahara et al. [1] have reported the observation of a Hanbury Brown-Twiss electron antibunching dip (their Fig. 3) could possibly be explained as an electron source emission rate dependency on the light polarization. Strain on their GaAs/GaAsP sample is uniaxial, and one would expect a linear dichroism in the photoemission possibly as large as 15% [7] - much larger than the 0.1% re…
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The claim that Kuwahara et al. [1] have reported the observation of a Hanbury Brown-Twiss electron antibunching dip (their Fig. 3) could possibly be explained as an electron source emission rate dependency on the light polarization. Strain on their GaAs/GaAsP sample is uniaxial, and one would expect a linear dichroism in the photoemission possibly as large as 15% [7] - much larger than the 0.1% reported effect. The same concern exist for circular polarized light.
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Submitted 1 November, 2021;
originally announced November 2021.
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Non-Poissonian ultrashort, nanoscale electron pulses
Authors:
Sam Keramati,
Will Brunner,
T. J. Gay,
Herman Batelaan
Abstract:
The statistical character of electron beams used in current technologies, as described by a stream of particles, is random in nature. Using coincidence measurements of femtosecond pulsed electron pairs, we report the observation of sub-Poissonian electron statistics that are non-random due to two-electron Coulomb interactions, and that exhibit an anti-bunching signal of 1 part in 4. This advanceme…
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The statistical character of electron beams used in current technologies, as described by a stream of particles, is random in nature. Using coincidence measurements of femtosecond pulsed electron pairs, we report the observation of sub-Poissonian electron statistics that are non-random due to two-electron Coulomb interactions, and that exhibit an anti-bunching signal of 1 part in 4. This advancement is a fundamental step towards realizing a strongly quantum degenerate electron beam needed for many applications, and in particular electron correlation spectroscopy.
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Submitted 1 August, 2021;
originally announced August 2021.
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Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces
Authors:
N. K. Lewis,
Y. Lassailly,
L. Martinelli,
I. Vobornik,
J. Fujii,
C. Bigi,
E. Brunkow,
N. B. Clayburn,
T. J. Gay,
W. R. Flavell,
E. A. Seddon
Abstract:
The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigne…
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The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigned to silicon dangling bonds on the basis of measured binding energies and photoemission intensity changes between horizontal and vertical light polarisations. Three surface states ($S_1$, $S_2$ and $S_4$), observed in the Si(110)"16 x 2" reconstruction, were assigned to Si adatoms and Si atoms present at the edges of the corrugated terrace structure. Only one of the four surface states, $S_3$, was observed in both the Si(110)"16 x 2" and 1 x 1 band maps and consequently attributed to the pervasive Si zigzag chains that are components of both the Si(110)"16 x 2" and 1 x 1 surfaces. A state in the bulk-band region was attributed to an in-plane bond. All data were consistent with the adatom-buckling model of the Si(110)"16 x 2" surface. Whilst room temperature measurements of $P_y$ and $P_z$ were statistically compatible with zero, $P_x$ measurements of the enantiomorphic A-type and B-type Si(110)"16 x 2" surfaces gave small average polarisations of around 1.5\% that were opposite in sign. Further measurements at 77 K on A-type Si(110)"16 x 2" surface gave a smaller value of +0.3\%. An upper limit of $\sim1\%$ may thus be taken for the longitudinal polarisation.
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Submitted 8 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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Femtosecond-Laser-Induced Spin-Polarized Electron Emission from a GaAs Tip
Authors:
Evan Brunkow,
Eric R. Jones,
Herman Batelaan,
T. J. Gay
Abstract:
It is shown that focusing circularly-polarized 800 nm light pulses of 100 fs duration on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and spin-polarized. The 400 fs duration of the emission process was determined by pump/probe measurements. The three samples we investigated produced electron polarizations…
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It is shown that focusing circularly-polarized 800 nm light pulses of 100 fs duration on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and spin-polarized. The 400 fs duration of the emission process was determined by pump/probe measurements. The three samples we investigated produced electron polarizations of 13.1(9)%, 13.3(7)%, and 10.4(2)%. Emission currents ranged between 50 pA and 3 nA with a sample bias of -100V and average laser power of 100 mW. The electron emission exhibited linear dichroism and was obtained under moderate vacuum conditions, similar to that of metallic tips. This source of spin-polarized electron pulses is "fast" in the sense that the electron emission process is of comparable duration to the laser pulses that initiate it.
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Submitted 7 January, 2019;
originally announced January 2019.
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Domain formation mechanism of the Si(110)"16 x 2" reconstruction
Authors:
N. K. Lewis,
N. B. Clayburn,
E. Brunkow,
T. J. Gay,
Y. Lassailly,
J. Fujii,
I. Vobornik,
W. R. Flavell,
E. A. Seddon
Abstract:
The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain orientation was independent of the heating current direction used to induce the Si(110)"16 x 2" reconstruction. Reciprocal-space lattice models of the reconstruction allowed for the correct identification of the domain or…
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The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain orientation was independent of the heating current direction used to induce the Si(110)"16 x 2" reconstruction. Reciprocal-space lattice models of the reconstruction allowed for the correct identification of the domain orientations in the LEED images and confirm that the reconstruction is 2D-chiral. It is proposed that the domain orientation upon surface reconstruction is determined by the direction of monoatomic steps present on the Si(110) plane. This is in turn determined by the direction at which the surface is polished off-axis from the (110) plane.
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Submitted 12 June, 2018;
originally announced June 2018.
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A low-voltage retarding-field Mott polarimeter for photocathode characterization
Authors:
James L. McCarter,
Marcy L. Stutzman,
Kenneth W. Trantham,
Tyler G. Anderson,
April M. Cook,
Timothy J. Gay
Abstract:
Nuclear physics experiments at Thomas Jefferson National Accelerator Facility's CEBAF rely on high polarization electron beams. We describe a recently commissioned system for prequalifying and studying photocathodes for CEBAF with a load-locked, low-voltage polarized electron source coupled to a compact retarding-field Mott polarimeter. The polarimeter uses simplified electrode structures and o…
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Nuclear physics experiments at Thomas Jefferson National Accelerator Facility's CEBAF rely on high polarization electron beams. We describe a recently commissioned system for prequalifying and studying photocathodes for CEBAF with a load-locked, low-voltage polarized electron source coupled to a compact retarding-field Mott polarimeter. The polarimeter uses simplified electrode structures and operates from 5 to 30 kV. The effective Sherman function for this device has been calibrated by comparison with the CEBAF 5 MeV Mott polarimeter. For elastic scattering from a thick gold target at 20 keV, the effective Sherman function is 0.201(5). Its maximum efficiency at 20 keV, defined as the detected count rate divided by the incident particle current, is 5.4(2) x 10-4, yielding a figure-of-merit, or analyzing power squared times efficiency, of 1.0(1) x 10-5. The operating parameters of this new polarimeter design are compared to previously published data for other compact Mott polarimeters of the retarding-field type.
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Submitted 29 March, 2010;
originally announced March 2010.
