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Generation of electro-optic frequency combs with optimized flatness in a silicon ring resonator modulator
Authors:
Erwan Weckenmann,
Thyago Monteiro,
Uiara Celine de Moura,
Francesco Da Ros,
Laurent Bramerie,
Mathilde Gay,
Diego Pérez-Galacho,
Lucas Deniel,
Frédéric Boeuf,
Delphine Marris-Morini,
Darko Zibar,
Christophe Peucheret
Abstract:
The flatness of electro-optic frequency combs (EOFCs) generated in a single silicon ring resonator modulator (RRM) is optimized by employing harmonic superposition of the radio-frequency driving signal. A differential evolution algorithm is employed in conjunction with a simplified model of the RRM for offline optimization of the amplitudes and phases of harmonic driving signals and the operating…
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The flatness of electro-optic frequency combs (EOFCs) generated in a single silicon ring resonator modulator (RRM) is optimized by employing harmonic superposition of the radio-frequency driving signal. A differential evolution algorithm is employed in conjunction with a simplified model of the RRM for offline optimization of the amplitudes and phases of harmonic driving signals and the operating point of the RRM. The optimized driving signals are then applied to a silicon RRM. EOFCs containing 7 and 9 lines are synthesized with a power imbalance between the lines of 2.9 dB and 5.4 dB, respectively, compared to 9.4 dB for an optimized 5-line comb generated from a single sinusoidal driving signal.
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Submitted 31 October, 2023;
originally announced October 2023.
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Narrow Linewidth near-UV InGaN Laser Diode based on External Cavity Fiber Bragg Grating
Authors:
Antoine Congar,
Mathilde Gay,
Georges Perin,
Dominique Mammez,
Jean-Claude Simon,
Pascal Besnard,
Julien Rouvillain,
Thierry Georges,
Laurent Lablonde,
Thierry Robin,
Stéphane Trebaol
Abstract:
We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode-suppression-ratio and mW output power. Detailed frequency noise analysis reveals s…
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We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode-suppression-ratio and mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and interferometric resolutions are needed.
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Submitted 8 February, 2021;
originally announced February 2021.
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Synthesis of epitaxial monolayer Janus SPtSe
Authors:
R. Sant,
M. Gay,
A. Marty,
S. Lisi,
R. Harrabi,
C. Vergnaud,
M. T. Dau,
X. Weng,
J. Coraux,
N. Gauthier,
O. Renault,
G. Renaud,
M. Jamet
Abstract:
Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push chemical composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such a novel Janus compound, SPtSe, which is predicted to exhibit strong Rashba spin-orbit coupling. We synthetized it by conversion of a single-layer of PtSe…
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Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push chemical composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such a novel Janus compound, SPtSe, which is predicted to exhibit strong Rashba spin-orbit coupling. We synthetized it by conversion of a single-layer of PtSe$_2$ on Pt(111) via sulphurization under H$_2$S atmosphere. Our in situ and operando structural analysis with grazing incidence synchrotron X-ray diffraction reveals the process by which the Janus alloy forms. The crystalline long-range order of the as-grown PtSe$_2$ monolayer is first lost due to thermal annealing. A subsequent recrystallization in presence of a source of sulphur yields a highly ordered SPtSe alloy, which is iso-structural to the pristine PtSe$_2$. The chemical composition is resolved, layer-by-layer, using angle-resolved X-ray photoelectron spectroscopy, demonstrating that Se-by-S substitution occurs selectively in the topmost chalcogen layer.
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Submitted 18 September, 2020;
originally announced September 2020.
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First inverse kinematics study of the $^{22}$Ne$(p,γ)^{23}$Na reaction and its role in AGB star and classical nova nucleosynthesis
Authors:
M. Williams,
A. Lennarz,
A. M. Laird,
U. Battino,
J. José D. Connolly,
C. Ruiz,
A. Chen,
B. Davids,
N. Esker,
B. R. Fulton,
R. Garg,
x M. Gay,
U. Greife,
U. Hager,
D. Hutcheon,
M. Lovely,
S. Lyons,
A. Psaltis,
J. E. Riley,
A. Tattersall
Abstract:
The abundances of sodium and oxygen are observed to be anti-correlated in all well-studied globular clusters. Asymptotic giant branch (AGB) stars undergoing hot bottom burning (HBB) are thought to be prime candidates for producing sodium-rich oxygen-poor material and expelling it into the cluster ISM. The 22Ne(p,gamma)23Na reaction has been shown to strongly influence the amount of 23Na produced d…
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The abundances of sodium and oxygen are observed to be anti-correlated in all well-studied globular clusters. Asymptotic giant branch (AGB) stars undergoing hot bottom burning (HBB) are thought to be prime candidates for producing sodium-rich oxygen-poor material and expelling it into the cluster ISM. The 22Ne(p,gamma)23Na reaction has been shown to strongly influence the amount of 23Na produced during HBB. This reaction is also important for classical novae nucleosynthesis, with sensitivity studies showing that the abundances of several isotopes in the Ne-Al region are significantly altered when varying the reaction rate between available compilations. Here we present the first inverse kinematics measurements of key resonances strengths as well as the direct capture S-factor. Together, this study represents the largest centre of mass energy range (149-1222 keV) over which this reaction has been measured in a single experiment. Our results for low-energy resonances at Ecm=149, 181 and 248 keV are in good agreement with recent forward kinematics results; we also find a direct capture S-factor consistent with the literature value of 62 keV.b. However, in the case of the important reference resonance at Ecm = 458 keV we find a strength value of wg=0.44 +/- 0.02 eV, which is significantly lower than recent results. Using our new recommended rate we explore the impact of these results on both AGB star and classical novae nucleosynthesis. In the case of AGB stars we see very little abundance changes with respect to the rate included in the STARLIB-2013. However, we observe changes of up to a factor of 2 in isotopes produced in both the carbon-oxygen (CO) and oxygen-neon (ONe) classical novae models considered here. The 22Ne(p,gamma)23Na reaction rate is now sufficiently well constrained to not significantly contribute toward abundance uncertainties from classical novae nucleosynthesis models.
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Submitted 3 October, 2019;
originally announced October 2019.
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First inverse kinematics measurement of key resonances in the ${}^{22}\text{Ne}(p,γ)^{23}\text{Na}$ reaction at stellar temperatures
Authors:
A. Lennarz,
M. Williams,
A. M. Laird,
U. Battino,
A. A. Chen,
D. Connolly,
B. Davids,
N. Esker,
R. Garg,
M. Gay,
U. Greife,
U. Hager,
D. Hutcheon,
J. José,
M. Lovely,
S. Lyons,
A. Psaltis,
J. E. Riley,
A. Tattersall,
C. Ruiz
Abstract:
In this Letter we report on the first inverse kinematics measurement of key resonances in the ${}^{22}\text{Ne}(p,γ)^{23}\text{Na}$ reaction which forms part of the NeNa cycle, and is relevant for ${}^{23}$Na synthesis in asymptotic giant branch (AGB) stars. An anti-correlation in O and Na abundances is seen across all well-studied globular clusters (GC), however, reaction-rate uncertainties limit…
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In this Letter we report on the first inverse kinematics measurement of key resonances in the ${}^{22}\text{Ne}(p,γ)^{23}\text{Na}$ reaction which forms part of the NeNa cycle, and is relevant for ${}^{23}$Na synthesis in asymptotic giant branch (AGB) stars. An anti-correlation in O and Na abundances is seen across all well-studied globular clusters (GC), however, reaction-rate uncertainties limit the precision as to which stellar evolution models can reproduce the observed isotopic abundance patterns. Given the importance of GC observations in testing stellar evolution models and their dependence on NeNa reaction rates, it is critical that the nuclear physics uncertainties on the origin of ${}^{23}$Na be addressed. We present results of direct strengths measurements of four key resonances in ${}^{22}\text{Ne}(p,γ)^{23}\text{Na}$ at E$_{\text c.m.}$ = 149 keV, 181 keV, 248 keV and 458 keV. The strength of the important E$_{\text c.m.}$ = 458 keV reference resonance has been determined independently of other resonance strengths for the first time with an associated strength of $ωγ$ = 0.439(22) eV and with higher precision than previously reported. Our result deviates from the two most recently published results obtained from normal kinematics measurements performed by the LENA and LUNA collaborations but is in agreement with earlier measurements. The impact of our rate on the Na-pocket formation in AGB stars and its relation to the O-Na anti-correlation was assessed via network calculations. Further, the effect on isotopic abundances in CO and ONe novae ejecta with respect to pre-solar grains was investigated.
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Submitted 4 October, 2019; v1 submitted 2 October, 2019;
originally announced October 2019.
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Van der Waals epitaxy of Mn-doped MoSe$_2$ on mica
Authors:
M. T. Dau,
C. Vergnaud,
M. Gay,
C. J. Alvarez,
A. Marty,
C. Beigné,
D. Jalabert,
J. -F. Jacquot,
O. Renault,
H. Okuno,
M. Jamet
Abstract:
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bottom-up strategy using molecular beam epitaxy to grow and dope large-area (cm$^2$) few-layer MoSe$_2$ with Mn as a magnetic dopant. High-quality Mn-do…
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The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bottom-up strategy using molecular beam epitaxy to grow and dope large-area (cm$^2$) few-layer MoSe$_2$ with Mn as a magnetic dopant. High-quality Mn-doped MoSe$_2$ layers are obtained for Mn content of less than 5 % (atomic). When increasing the Mn content above 5 % we observe a clear transition from layer-by-layer to cluster growth. Magnetic measurements involving a transfer process of the cm$^2$-large doped layers on 100-micron-thick silicon substrate, show plausible proof of high-temperature ferromagnetism of 1 % and 10 % Mn-doped MoSe$_2$. Although we could not point to a correlation between magnetic and electrical properties, we demonstrate that the transfer process described in this report permits to achieve conventional electrical and magnetic measurements on the doped layers transferred on any substrate. Therefore, this study provides a promising route to characterize stable ferromagnetic 2D layers, which is broadening the current start-of-the-art of 2D materials-based applications.
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Submitted 11 June, 2019;
originally announced June 2019.
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Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Si
Authors:
C. Vergnaud,
M. Gay,
C. Alvarez,
M. -T. Dau,
F. Pierre,
D. Jalabert,
C. Licitra,
A. Marty,
C. Beigné,
B. Grévin,
O. Renault,
H. Okuno,
M. Jamet
Abstract:
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic do** of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an impo…
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Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic do** of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe$_2$ mono- and multi-layers on SiO$_2$/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO$_2$/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe$_2$ monolayers over 1 cm$^2$. To grow MoSe$_2$ multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe$_2$ monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe$_2$ multilayers over 1 cm$^2$. Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in MoSe$_2$ bilayers.
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Submitted 7 June, 2019;
originally announced June 2019.
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Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
Authors:
Fabian Cadiz,
Cedric Robert,
Gang Wang,
Wilson Kong,
Xi Fan,
Mark Blei,
Delphine Lagarde,
Maxime Gay,
Marco Manca,
Takashi Taniguchi,
Kenji Watanabe,
Thierry Amand,
Xavier Marie,
Pierre Renucci,
Sefaattin Tongay,
Bernhard Urbaszek
Abstract:
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical…
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The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced do** is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.
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Submitted 30 June, 2016;
originally announced June 2016.
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Well separated trion and neutral excitons on superacid treated MoS2 monolayers
Authors:
Fabian Cadiz,
Simon Tricard,
Maxime Gay,
Delphine Lagarde,
Gang Wang,
Cedric Robert,
Pierre Renucci,
Bernhard Urbaszek,
Xavier Marie
Abstract:
Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the photoluminescence (PL) spectra even at low temperature consists typically of broad, overlap** contributions from neutral, charged excitons (trions) and localized states. Here…
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Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the photoluminescence (PL) spectra even at low temperature consists typically of broad, overlap** contributions from neutral, charged excitons (trions) and localized states. Here we show that in superacid treated MoS2 MLs the PL intensity increases by up to 60 times at room temperature. The neutral and charged exciton transitions are spectrally well separated in PL and reflectivity at T=4 K, with linewidth for the neutral exciton of 15 meV, but with similar intensities compared to the ones in as-exfoliated MLs at the same temperature. Time resolved experiments uncover picoseconds recombination dynamics analyzed separately for charged and neutral exciton emission. Using the chiral interband selection rules, we demonstrate optically induced valley polarization for both complexes and valley coherence for only the neutral exciton.
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Submitted 20 April, 2016;
originally announced April 2016.
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SOA - NOLM in Reflective Configuration for Optical Regeneration in High Bit Rate Transmission Systems
Authors:
Vincent Roncin,
Gwenaëlle Girault,
Mathilde Gay,
Laurent Bramerie,
Jean-Claude Simon
Abstract:
This paper presents a theoretical and experimental investigation of optical signal regeneration properties of a non-linear optical loop mirror using a semiconductor optical amplifier as the active element (SOA-NOLM). While this device has been extensively studied for optical time division demultiplexing (OTDM) and wavelength conversion applications, our proposed approach, based on a reflective con…
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This paper presents a theoretical and experimental investigation of optical signal regeneration properties of a non-linear optical loop mirror using a semiconductor optical amplifier as the active element (SOA-NOLM). While this device has been extensively studied for optical time division demultiplexing (OTDM) and wavelength conversion applications, our proposed approach, based on a reflective configuration, has not yet been investigated, particularly in the light of signal regeneration. The impact on the transfer function shape of different parameters, like SOA position in the interferometer and SOA input optical powers, are numerically studied to appreciate the regenerative capabilities of the device.Regenerative performances in association with a dual stage of SOA to create a 3R regenerator which preserves the data polarity and the wavelength are experimentally assessed. Thanks to this complete regenerative function, a 100.000 km error free transmission has experimentally been achieved at 10 Gb/s in a recirculating loop. The evolution of Bit Error Rate for multiple pass into the regenerator and the polarization insensitivity demonstration to input data are presented.
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Submitted 12 May, 2014;
originally announced May 2014.
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Analysis of snowpack properties and structure from TerraSAR-X data, based on multilayer backscattering and snow evolution modeling approaches
Authors:
Xuan-Vu Phan,
Laurent Ferro-Famil,
Michel Gay,
Yves Durand,
Marie Dumont,
Sophie Allain,
Guy D'Urso
Abstract:
Recently launched high precision Synthetic Aperture Radar (SAR) satellites such as TerraSAR-X, COSMO-SkyMed, etc. present a high potential for better observation and characterization of the cryosphere. This study introduces a new approach using high frequency (X-band) SAR data and an Electromagnetic Backscattering Model (EBM) to constrain the detailed snowpack model Crocus. A snowpack EBM based on…
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Recently launched high precision Synthetic Aperture Radar (SAR) satellites such as TerraSAR-X, COSMO-SkyMed, etc. present a high potential for better observation and characterization of the cryosphere. This study introduces a new approach using high frequency (X-band) SAR data and an Electromagnetic Backscattering Model (EBM) to constrain the detailed snowpack model Crocus. A snowpack EBM based on radiative transfer theory, previously used for C-band applications, is adapted for the X-band. From measured or simulated snowpack stratigraphic profiles consisting of snow optical grain radius and density, this forward model calculates the backscattering coefficient for different polarimetric channels. The output result is then compared with spaceborne TerraSAR-X acquisitions to evaluate the forward model. Next, from the EBM, the adjoint operator is developed and used in a variational analysis scheme in order to minimize the discrepancies between simulations and SAR observations. A time series of TerraSAR-X acquisitions and in-situ measurements on the Argentière glacier (Mont-Blanc massif, French Alps) are used to evaluate the EBM and the data assimilation scheme. Results indicate that snow stratigraphic profiles obtained after the analysis process show a closer agreement with the measured ones than the initial ones, and therefore demonstrate the high potential of assimilating SAR data to model of snow evolution.
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Submitted 14 November, 2012;
originally announced November 2012.
