-
Disorder-resilient transport through dopant arrays in silicon
Authors:
Michał Gawełczyk,
Garnett W. Bryant,
Michał Zieliński
Abstract:
Chains and arrays of phosphorus donors in silicon have recently been used to demonstrate dopant-based quantum simulators. The dopant disorder present in fabricated devices must be accounted for. Here, we theoretically study transport through disordered donor-based $3\times 3$ arrays that model recent experimental results. We employ a theory that combines the exact diagonalization of an extended Hu…
▽ More
Chains and arrays of phosphorus donors in silicon have recently been used to demonstrate dopant-based quantum simulators. The dopant disorder present in fabricated devices must be accounted for. Here, we theoretically study transport through disordered donor-based $3\times 3$ arrays that model recent experimental results. We employ a theory that combines the exact diagonalization of an extended Hubbard model of the array with a non-equilibrium Green's function formalism to model transport in interacting systems. We show that current flow through the array and features of measured stability diagrams are highly resilient to disorder. We interpret this as an emergence of uncomplicated behavior in the multi-electron system dominated by strong correlations, regardless of array filling, where the current follows the shortest paths between source and drain sites that avoid possible obstacles. The reference $3\times 3$ array has transport properties very similar to three parallel 3-site chains coupled only by interchain Coulomb interaction, which indicates a challenge in characterizing such devices.
△ Less
Submitted 8 May, 2024;
originally announced May 2024.
-
Tuning the coherent interaction of an electron qubit and a nuclear magnon
Authors:
Noah Shofer,
Leon Zaporski,
Martin Hayhurst Appel,
Santanu Manna,
Saimon Covre da Silva,
Alexander Ghorbal,
Urs Haeusler,
Armando Rastelli,
Claire Le Gall,
Michał Gawełczyk,
Mete Atatüre,
Dorian A. Gangloff
Abstract:
A central spin qubit interacting coherently with an ensemble of proximal spins can be used to engineer entangled collective states or a multi-qubit register. Making full use of this many-body platform requires tuning the interaction between the central spin and its spin register. GaAs quantum dots offer a model realization of the central spin system where an electron qubit interacts with multiple…
▽ More
A central spin qubit interacting coherently with an ensemble of proximal spins can be used to engineer entangled collective states or a multi-qubit register. Making full use of this many-body platform requires tuning the interaction between the central spin and its spin register. GaAs quantum dots offer a model realization of the central spin system where an electron qubit interacts with multiple ensembles of $\sim 10^{4}$ nuclear spins. In this work, we demonstrate tuning of the interaction between the electron qubit and the nuclear many-body system in a GaAs quantum dot. The homogeneity of the GaAs system allows us to perform high-precision and isotopically selective nuclear sideband spectroscopy, which reveals the single-nucleus electronic Knight field. Together with time-resolved spectroscopy of the nuclear field, this fully characterizes the electron-nuclear interaction for a priori control. An algorithmic feedback sequence selects the nuclear polarization precisely, which adjusts the electron-nuclear exchange interaction in situ via the electronic g-factor anisotropy. This allows us to tune directly the activation rate of a collective nuclear excitation (magnon) and the coherence time of the electron qubit. Our method is applicable to similar central-spin systems and enables the programmable tuning of coherent interactions in the many-body regime.
△ Less
Submitted 30 April, 2024;
originally announced April 2024.
-
Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates
Authors:
Wojciech Rudno-Rudziński,
Michał Gawełczyk,
Paweł Podemski,
Ramasubramanian Balasubramanian,
Vitalii Sichkovskyi,
Amnon J. Willinger,
Gadi Eisenstein,
Johann P. Reithmaier,
Grzegorz Sęk
Abstract:
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible wi…
▽ More
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible with established telecom platform. Using different dislocation defects filtering layers, exploiting strained superlattices and supplementary QD layers, we mitigate the effects of lattice constant and thermal expansion mismatches between III-V materials and Si during growth. Complementary optical spectroscopy techniques, i.e. photoreflectance and temperature-, time- and polarization- resolved photoluminescence, allow us to determine the optical quality and application potential of the obtained structures by comparing them to a reference sample -- state-of-the-art QDs grown on InP. Experimental findings are supported by calculations of excitonic states and optical transitions by combining multiband k.p and configuration-interaction methods. We show that our design of structures prevents the generation of a considerable density of defects, as intended. The emission of Si-based structures appears to be much broader than for the reference dots, due to the creation of different QD populations which might be a disadvantage in particular laser applications, however, could be favourable for others, e.g. in broadly tunable devices, sensors, or optical amplifiers. Eventually, we identify the overall most promising combination of defect filtering layers, discuss its advantages and limitations, and prospects for further improvements.
△ Less
Submitted 20 March, 2024;
originally announced March 2024.
-
Hybrid acousto-optical swing-up preparation of exciton and biexciton states in a quantum dot
Authors:
Mateusz Kuniej,
Michał Gawełczyk,
Paweł Machnikowski
Abstract:
Recent years brought the idea of hybrid systems, in which quantum degrees of freedom, due to controlled couplings, allow the transfer of quantum information and may lead to the emergence of new generation devices. Due to the universal coupling with all solid-state systems and compatibility with miniaturization, acoustic fields will play an important role in interfacing such components. Optically a…
▽ More
Recent years brought the idea of hybrid systems, in which quantum degrees of freedom, due to controlled couplings, allow the transfer of quantum information and may lead to the emergence of new generation devices. Due to the universal coupling with all solid-state systems and compatibility with miniaturization, acoustic fields will play an important role in interfacing such components. Optically active quantum dots (QDs) are at the forefront of systems for applications in quantum technologies and their multiple available interfaces make them a great component of hybrid systems. QDs generate polarization-entangled photon pairs, however deterministic and high-fidelity preparation of the state is needed. All resonant schemes need filtering to distinguish emitted photons from the excitation pulse, which limits the photon yield significantly. Thus, non-resonant excitation methods are needed like the recently proposed and successful swing-up scheme. Here, we propose a hybrid acousto-optical version of this non-resonant scheme to prepare exciton and biexciton states. We show that using acoustic modulation allows selectively exciting either exciton or biexciton states with just one mode of vibration and one optical pulse or vice versa: acoustic pulse during detuned optical driving. Thus, either of the fields can act as a trigger controlling the evolution. Further, we evaluate the impact of phonon decoherence at finite temperatures for two types of application-relevant QDs, InAs/GaAs and GaAs/AlGaAs, and find that for GaAs QDs exciton preparation can be almost decoherence-free even at liquid nitrogen temperatures already with currently available acoustic modulation frequencies. This approach may pave the way for generating entanglement between an emitter and a quantum acoustic mode when using the acoustic mode as a trigger for the transitions.
△ Less
Submitted 12 February, 2024;
originally announced February 2024.
-
Determining Strain Components in a Diamond Waveguide from Zero-Field ODMR Spectra of NV$^{-}$ Center Ensembles
Authors:
M. Sahnawaz Alam,
Federico Gorrini,
Michał Gawełczyk,
Daniel Wigger,
Giulio Coccia,
Yanzhao Guo,
Sajedeh Shahbazi,
Vibhav Bharadwaj,
Alexander Kubanek,
Roberta Ramponi,
Paul E. Barclay,
Anthony J. Bennett,
John P. Hadden,
Angelo Bifone,
Shane M. Eaton,
Paweł Machnikowski
Abstract:
The negatively charged nitrogen-vacancy (NV${}^-$) center in diamond has shown great potential in nanoscale sensing and quantum information processing due to its rich spin physics. An efficient coupling with light, providing strong luminescence, is crucial for realizing these applications. Laser-written waveguides in diamond promote NV${}^-$ creation and improve their coupling to light but at the…
▽ More
The negatively charged nitrogen-vacancy (NV${}^-$) center in diamond has shown great potential in nanoscale sensing and quantum information processing due to its rich spin physics. An efficient coupling with light, providing strong luminescence, is crucial for realizing these applications. Laser-written waveguides in diamond promote NV${}^-$ creation and improve their coupling to light but at the same time induce strain in the crystal. The induced strain contributes to light guiding but also affects the energy levels of NV${}^-$ centers. We probe NV${}^-$ spin states experimentally with the commonly used zero-field optically detected magnetic resonance (ODMR). In our waveguides, the ODMR spectra are shifted, split, and consistently asymmetric, which we attribute to the impact of local strain. To understand these features, we model ensemble ODMR signals in the presence of strain. By fitting the model results to the experimentally collected ODMR data we determine the strain tensor components at different positions, thus determining the strain profile across the waveguide. We show that ODMR spectroscopy can be used as a strain imaging tool. The resulting strain within the waveguide is dominated by a compressive axial component transverse to the waveguide structure, with a smaller contribution from vertical and shear strain components.
△ Less
Submitted 9 February, 2024;
originally announced February 2024.
-
Quantum dots as optimized chiral emitters for photonic integrated circuits
Authors:
Jakub Rosiński,
Michał Gawełczyk,
Karol Tarnowski,
Paweł Karwat,
Daniel Wigger,
Paweł Machnikowski
Abstract:
Chiral coupling, which allows directional interactions between quantum dots (QDs) and photonic crystal waveguide modes, holds promise for enhancing the functionality of quantum photonic integrated circuits. Elliptical polarizations of QD transitions offer a considerable enhancement in directionality. However, in epitaxial QD fabrication, the lack of precise control over lateral QD positions still…
▽ More
Chiral coupling, which allows directional interactions between quantum dots (QDs) and photonic crystal waveguide modes, holds promise for enhancing the functionality of quantum photonic integrated circuits. Elliptical polarizations of QD transitions offer a considerable enhancement in directionality. However, in epitaxial QD fabrication, the lack of precise control over lateral QD positions still poses a challenge in achieving efficient chiral interfaces. Here, we present a theoretical analysis in which we propose to optimize the polarization of a QD emitter against the spatially averaged directionality and demonstrate that the resulting emitter offers a considerable technological advantage in terms of the size and location of high-directionality areas of the waveguide as well as their overlap with the regions of large Purcell enhancement, thereby improving the scalability of the device. Moreover, using $\mathbf{\mathit{k}}\cdot\mathbf{\mathit{p}}$ modeling, we demonstrate that the optimal elliptical polarization can be achieved for neutral exciton transitions in a realistic QD structure. Our results present a viable path for efficient chiral coupling in QD-based photonic integrated circuits, to a large extent overcoming the challenges and limitations of the present manufacturing technology.
△ Less
Submitted 14 December, 2023; v1 submitted 13 October, 2023;
originally announced October 2023.
-
Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
Authors:
Paweł Wyborski,
Michał Gawełczyk,
Paweł Podemski,
Piotr Andrzej Wroński,
Mirosława Pawlyta,
Sandeep Gorantla,
Fauzia Jabeen,
Sven Höfling,
Grzegorz Sęk
Abstract:
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modifica…
▽ More
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modification of other quantum dot properties. Knowledge of these effects is crucial for actual implementations of QD-based non-classical light sources for quantum communication schemes. Here, we thoroughly study single GaAs-based quantum dots grown by molecular-beam epitaxy on specially designed, digital-alloy InGaAs metamorphic buffers. With a set of structures varying in the buffer indium content and providing quantum dot emission through the telecom spectral range up to 1.6 $μ$m, we analyze the impact of the buffer and its composition on QD structural and optical properties. We identify the mechanisms of quantum dot emission shift with varying buffer composition. We also look into the charge trap** processes and compare excitonic properties for different growth conditions with single-dot emission successfully shifted to both, the second and the third telecom windows.
△ Less
Submitted 26 November, 2023; v1 submitted 29 April, 2023;
originally announced May 2023.
-
Beyond the four-level model: Dark and hot states in quantum dots degrade photonic entanglement
Authors:
Barbara Ursula Lehner,
Tim Seidelmann,
Gabriel Undeutsch,
Christian Schimpf,
Santanu Manna,
Michał Gawełczyk,
Saimon Filipe Covre da Silva,
Xueyong Yuan,
Sandra Stroj,
Doris E. Reiter,
Vollrath Martin Axt,
Armando Rastelli
Abstract:
Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling…
▽ More
Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling coolers. Here we study the polarization entanglement among photon pairs from the biexciton-exciton cascade in GaAs quantum dots at temperatures up to 65 K. We observe entanglement degradation accompanied by changes in decay dynamics, which we ascribe to thermal population and depopulation of hot and dark states in addition to the four levels relevant for photon pair generation. Detailed calculations considering the presence and characteristics of the additional states and phonon-assisted transitions support the interpretation. We expect these results to guide the optimization of quantum dots as sources of highly entangled photons at elevated temperatures.
△ Less
Submitted 19 December, 2022;
originally announced December 2022.
-
Bardeen's tunneling theory applied to intraorbital and interorbital hop** integrals between dopants in silicon
Authors:
Michał Gawełczyk,
Michał Zieliński
Abstract:
We utilize Bardeen's tunneling theory to calculate intra- and interorbital hop** integrals between phosphorus donors in silicon using known orbital wave functions. While the two-donor problem can be solved directly, the knowledge of hop**s for various pairs of orbitals is essential for constructing multi-orbital Hubbard models for chains and arrays of donors. To assure applicability to long-ra…
▽ More
We utilize Bardeen's tunneling theory to calculate intra- and interorbital hop** integrals between phosphorus donors in silicon using known orbital wave functions. While the two-donor problem can be solved directly, the knowledge of hop**s for various pairs of orbitals is essential for constructing multi-orbital Hubbard models for chains and arrays of donors. To assure applicability to long-range potentials, we rederive Bardeen's formula for the matrix element without assuming non-overlap** potentials. Moreover, we find a correction to the original expression allowing us to use it at short distances. We also show that accurate calculation of the lowest donor-pair eigenstates is possible based on these tunnel couplings, and we characterize the obtained states. The results are in satisfactory quantitative agreement with those obtained with the standard Hückel tight-binding method. The calculation relies solely on the wave functions in the barrier region and does not explicitly involve donor or lattice potentials, which has practical advantages. We find that neglecting the central correction potential in the standard method may lead to qualitatively incorrect results, while its explicit inclusion raises severe numerical problems, as it is contained in a tiny volume. In contrast, using wave functions obtained with this correction in the proposed method does not raise such issues. Nominally, the computational cost of the method is to calculate a double integral along the plane that separates donors. For donor separation in directions where valley interference leads to oscillatory behavior, additional averaging over the position of the integration plane is needed. Despite this, the presented approach offers a competitive computational cost as compared to the standard one. This work may be regarded as a benchmark of a promising method for calculating hop** integrals in lattice models.
△ Less
Submitted 30 September, 2022;
originally announced September 2022.
-
Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
Authors:
M. Gawełczyk,
P. Wyborski,
P. Podemski,
J. P. Reithmaier,
S. Höfling,
G. Sęk
Abstract:
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This is based on probing the optical transitions via pol…
▽ More
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This is based on probing the optical transitions via polarization-resolved microphotoluminescence excitation ($μ$PLE) measurement performed on single nanostructures combined with theoretical calculation of neutral and charged exciton optical properties. We successfully probe absorption-like spectra for individual bright states forming the exciton ground-state fine structure, as well as for the negatively charged exciton. Confronting the calculated spectrum of excitonic absorption with $μ$PLE traces, we identify optical transitions involving states that contain carriers at various excited levels related to the longest dimension. Based on cross-polarized excitation-detection scheme, we show very well conserved spin configuration during orbital relaxation of the exciton from a number of excited states comparable to the quasi-resonant pum** via the optical phonon, and no polarization memory for the trion, as theoretically expected.
△ Less
Submitted 28 June, 2021;
originally announced June 2021.
-
Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
Authors:
Paweł Holewa,
Shima Kadkhodazadeh,
Michał Gawełczyk,
Paweł Baluta,
Anna Musiał,
Vladimir G. Dubrovskii,
Marcin Syperek,
Elizaveta Semenova
Abstract:
The rapidly develo** quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber networks and on-chip silicon photonic processors. InAs/InP quantum dots (QDs) are among the leading candidates for this purpose, due to their high emission effic…
▽ More
The rapidly develo** quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber networks and on-chip silicon photonic processors. InAs/InP quantum dots (QDs) are among the leading candidates for this purpose, due to their high emission efficiency in the required spectral range. However, fabricating versatile InAs/InP QD-based quantum emitters is challenging, especially as these QDs typically have asymmetric profiles in the growth plane, resulting in a substantial bright-exciton fine structure splitting (FSS). This hinders the generation of entangled photon pairs and thus, compromises the versatility of InAs/InP QDs. We overcome this by implementing droplet epitaxy (DE) synthesis of low surface density (2.8$\times$10$^8$ cm$^{-2}$) InAs QDs on an (001)-oriented InP substrate. The resulting QDs are located in etched pits, have concave bases, and most importantly, have symmetric in-plane profiles. We provide an analytical model to explain the kinetics of pit formation and QD base shape modification. Our theoretical calculations of electronic states reveal the properties of neutral and charged excitons and biexcitons confined in such QDs, which agree with the optical investigations of individual QDs. The optical response of QD ensembles suggests that FSS may indeed be negligible, as reflected in the vanishing degree of linear polarization. However, single QD spectrum gathered from an etched mesa shows moderate FSS of (50$\pm$5) $μ$eV that we link to destructive changes made in the QD environment during the post-growth processing. Finally, we show that the studied DE QDs provide a close-to-ideal single-photon emission purity of (92.5$\pm$7.5) $\%$ in the third telecom window.
△ Less
Submitted 14 July, 2021; v1 submitted 19 April, 2021;
originally announced April 2021.
-
Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
Authors:
Paweł Holewa,
Michał Gawełczyk,
Aleksander Maryński,
Paweł Wyborski,
Johann Peter Reithmaier,
Grzegorz Sęk,
Mohamed Benyoucef,
Marcin Syperek
Abstract:
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emis…
▽ More
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emission in the range of $1.4-2.0$ $μ$m, essential for many near-infrared photonic applications. We find that, in contrast to the InAs/InP system, the multimodal distribution results here from a two-monolayer difference in QD height between consecutive families of dots. This may stem from the long-range ordering in the quaternary barrier alloy that stabilizes QD nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally broad emission, we find a nearly dispersionless value of $1.3\pm0.3$ ns. Finally, we examine the temperature dependence of emission characteristics. We underline the impact of localized states in the wetting layer playing the role of carrier reservoir during thermal carrier redistribution. We determine the hole escape to the InAlGaAs barrier to be a primary PL quenching mechanism in these QDs.
△ Less
Submitted 18 November, 2020;
originally announced November 2020.
-
Optical and electronic properties of low-density InAs/InP quantum dot-like structures devoted to single-photon emitters at telecom wavelengths
Authors:
P. Holewa,
M. Gawełczyk,
C. Ciostek,
P. Wyborski,
S. Kadkhodazadeh,
E. Semenova,
M. Syperek
Abstract:
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks. However, obtaining the necessary low in-plane density of emitters remains a challenge. Such structures are also still less explored than their InAs/GaAs counterpart…
▽ More
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks. However, obtaining the necessary low in-plane density of emitters remains a challenge. Such structures are also still less explored than their InAs/GaAs counterparts regarding optical properties of confined carriers. Here, we report on the growth via metal-organic vapor phase epitaxy and investigation of low-density InAs/InP QD-like structures, emitting in the range of 1.2-1.7 $μ$m, which includes the S, C, and L bands of the third optical window. We observe multiple photoluminescence (PL) peaks originating from flat QDs with height of small integer numbers of material monolayers. Temperature-dependent PL reveals redistribution of carriers between families of QDs. Via time-resolved PL, we obtain radiative lifetimes nearly independent of emission energy in contrast to previous reports on InAs/InP QDs, which we attribute to strongly height-dependent electron-hole correlations. Additionally, we observe neutral and charged exciton emission from spatially isolated emitters. Using the 8-band k${\cdot}$p model and configuration-interaction method, we successfully reproduce energies of emission lines, the dispersion of exciton lifetimes, carrier activation energies, as well as the biexciton binding energy, which allows for a detailed and comprehensive analysis of the underlying physics.
△ Less
Submitted 16 December, 2019;
originally announced December 2019.
-
Tunneling-related electron spin relaxation in self-assembled quantum-dot molecules
Authors:
Michał Gawełczyk,
Krzysztof Gawarecki
Abstract:
We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1% of the spin-conserving one. By studying the dependence of spin relaxation rate on external fields, we show that the process is active at a considerable rate ev…
▽ More
We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1% of the spin-conserving one. By studying the dependence of spin relaxation rate on external fields, we show that the process is active at a considerable rate even without the magnetic field, and scales with the latter differently than the relaxation in a Zeeman doublet. Utilizing a multiband $\boldsymbol{k}\cdot\boldsymbol{p}$ theory, we selectively investigate the impact of various spin-mixing terms in the electron energy and carrier-phonon interaction Hamiltonians. As a result, we identify the main contribution to come from the Dresselhaus spin-orbit interaction, which is responsible for the zero-field effect. At magnetic fields above $\sim$ 15 T, this is surpassed by other contributions due to the structural shear strain. We also study the impact of the sample morphology and determine that the misalignment of the dots may enhance relaxation rate by over an order of magnitude. Finally, via virtual tunneling at nonzero temperature, the process in question also affects stationary electrons in tunnel-coupled structures and provides a Zeeman-doublet spin relaxation channel even without the magnetic field.
△ Less
Submitted 5 June, 2021; v1 submitted 26 February, 2019;
originally announced February 2019.
-
Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm
Authors:
M. Syperek,
Ł. Dusanowski,
M. Gawełczyk,
G. Sęk,
A. Somers,
J. P. Reithmaier,
S. Höfling,
J. Misiewicz
Abstract:
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pum**…
▽ More
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pum** conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pum** scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, can lead to the polarization degree above 50%. We discuss the role of intrinsic asymmetries in the quantum dash that influence values of the degree of polarization and its time evolution.
△ Less
Submitted 24 July, 2018;
originally announced July 2018.
-
Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 μm
Authors:
Ł. Dusanowski,
M. Gawełczyk,
J. Misiewicz,
S. Höfling,
J. P. Reithmaier,
G. Sęk
Abstract:
We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume, which results in atypical carrier confinement characteristics with $s$-$p$ shell energy splittings far below the optical phonon energy, which strongly affects the…
▽ More
We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume, which results in atypical carrier confinement characteristics with $s$-$p$ shell energy splittings far below the optical phonon energy, which strongly affects the phonon-assisted relaxation. Probing the emission kinetics with time-resolved microphotoluminescence from a single dot, we observe a strongly non-monotonic temperature dependence of the charged exciton lifetime. Using a kinetic rate-equation model, we find that a relaxation side-path through the excited charged exciton triplet states may lead to such behavior. This, however, involves efficient singlet-triplet relaxation via the electron spin-flip. Thus, we interpret the results as an indirect observation of strongly enhanced electron spin relaxation without magnetic field, possibly resulting from atypical confinement characteristics.
△ Less
Submitted 28 July, 2018; v1 submitted 8 July, 2018;
originally announced July 2018.
-
Dominant role of the shear strain induced admixture in spin-flip processes in self-assembled quantum dots
Authors:
Adam Mielnik-Pyszczorski,
Krzysztof Gawarecki,
Michał Gawełczyk,
Paweł Machnikowski
Abstract:
We study theoretically the spin-flip relaxation processes for a single electron in a self-assembled InAs/GaAs quantum dot, using an 8-band kp theory in the envelope function approximation. We show that the dominating channel of spin relaxation is spin admixture induced by symmetry-breaking shear strain, which can be mapped onto two effective spin-phonon terms in a conduction band (effective mass)…
▽ More
We study theoretically the spin-flip relaxation processes for a single electron in a self-assembled InAs/GaAs quantum dot, using an 8-band kp theory in the envelope function approximation. We show that the dominating channel of spin relaxation is spin admixture induced by symmetry-breaking shear strain, which can be mapped onto two effective spin-phonon terms in a conduction band (effective mass) Hamiltonian that have a similar structure and interfere constructively. Unlike the Dresselhaus coupling that dominates spin relaxation in larger, unstrained dots, the shear strain contribution cannot be modeled by a unique standard term in the Hamiltonian but rather relies on the actual strain distribution in the quantum dot.
△ Less
Submitted 9 July, 2018; v1 submitted 11 December, 2017;
originally announced December 2017.
-
Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures
Authors:
M. Gawełczyk,
M. Syperek,
A. Maryński,
P. Mrowiński,
Ł. Dusanowski,
K. Gawarecki,
J. Misiewicz,
A. Somers,
J. P. Reithmaier,
S. Höfling,
G. Sęk
Abstract:
We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry- and size-driven effects, we illustrate them with a detailed analysis of InAs/AlGaInAs/InP elongated quantum dots. These offer a widely varied confinement characteristics tuned by size and geomet…
▽ More
We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry- and size-driven effects, we illustrate them with a detailed analysis of InAs/AlGaInAs/InP elongated quantum dots. These offer a widely varied confinement characteristics tuned by size and geometry that are tailored during the growth process, which leads to emission in the application-relevant spectral range of 1.25-1.65 μm. By exploring the interplay of the very shallow hole confining potential and widely varying structural asymmetry, we show that a transition from the strong through intermediate to even weak confinement regime is possible in nanostructures of this kind. This has a significant impact on exciton recombination dynamics and the polarization of emission, which are shown to depend not only on details of the calculated excitonic states but also on excitation conditions in the photoluminescence experiments. We estimate the impact of the latter and propose a way to determine the intrinsic polarization-dependent exciton light-matter coupling based on kinetic characteristics.
△ Less
Submitted 8 January, 2018; v1 submitted 21 September, 2017;
originally announced September 2017.
-
Controllable electron spin dephasing due to phonon state distinguishability in a coupled quantum dot system
Authors:
Michał Gawełczyk,
Mateusz Krzykowski,
Krzysztof Gawarecki,
Paweł Machnikowski
Abstract:
We predict a spin pure dephasing channel in electron relaxation between states with unequal Zeeman splittings, exemplified by a spin-preserving electron tunneling between quantum dots in a magnetic field. The dephasing is caused by a mismatch in electron $g$-factors in the dots leading to distinguishability of phonons emitted during tunneling with opposite spins. Combining multiband…
▽ More
We predict a spin pure dephasing channel in electron relaxation between states with unequal Zeeman splittings, exemplified by a spin-preserving electron tunneling between quantum dots in a magnetic field. The dephasing is caused by a mismatch in electron $g$-factors in the dots leading to distinguishability of phonons emitted during tunneling with opposite spins. Combining multiband $\boldsymbol{k}{\cdot}\boldsymbol{p}$ modeling and dynamical simulations via a Master equation we show that this fundamental effect of spin measurement effected by the phonon bath may be widely controlled by the size and composition of the dots or on demand, via tuning of external fields. By comparing the numerically simulated degree of dephasing with the predictions of general theory based on distinguishability of environment states, we show that the proposed mechanism is the dominant phonon-related spin dephasing channel and may limit spin coherence time in tunnel-coupled structures at cryogenic temperatures.
△ Less
Submitted 3 August, 2018; v1 submitted 19 July, 2017;
originally announced July 2017.
-
Spin dynamics and magneto-optical response in charge-neutral tunnel-coupled quantum dots
Authors:
Michał Gawełczyk,
Paweł Machnikowski
Abstract:
We model the electron and hole spin dynamics in an undoped double quantum dot structure, considering the carrier tunneling between quantum dots. Taking into account also the presence of an in-plane or tilted magnetic field, we provide the simulation of magneto-optical experiments, like the time resolved Kerr rotation measurement, which are performed currently on such structures to probe the tempor…
▽ More
We model the electron and hole spin dynamics in an undoped double quantum dot structure, considering the carrier tunneling between quantum dots. Taking into account also the presence of an in-plane or tilted magnetic field, we provide the simulation of magneto-optical experiments, like the time resolved Kerr rotation measurement, which are performed currently on such structures to probe the temporal spin dynamics. With our model, we reproduce the experimentally observed effect of the extension of the spin polarization life time caused by the spatial charge separation, which may occur in structures of this type. Moreover, we provide a number of qualitative predictions concerning the necessary conditions for observation of this effect as well as about possible channels of its suppression, including the spin-orbit coupling, which leads to tunneling of carriers accompanied by a spin-flip. We consider also the impact of the magnetic field tilting, which results in an interesting spin polarization dynamics.
△ Less
Submitted 11 January, 2018; v1 submitted 16 July, 2014;
originally announced July 2014.
-
Optical initialization of hole spins in p-doped quantum dots: orientation efficiency and loss of coherence
Authors:
Michał Gawełczyk,
Paweł Machnikowski
Abstract:
We study theoretically the recently proposed hole spin initialization scheme for $p$-doped quantum well or dot systems via coupling to trion states with sub-picosecond circularly polarized laser pulses. We analyze the efficiency of spin initialization an predict the intrinsic spin coherence loss due to the pulse excitation itself as well as the phonon-induced spin dephasing, both taking place on t…
▽ More
We study theoretically the recently proposed hole spin initialization scheme for $p$-doped quantum well or dot systems via coupling to trion states with sub-picosecond circularly polarized laser pulses. We analyze the efficiency of spin initialization an predict the intrinsic spin coherence loss due to the pulse excitation itself as well as the phonon-induced spin dephasing, both taking place on the timescale of the driving laser pulse. We show that the ratio of the degree of dephasing to the achieved orientation effect does not depend on the pulse area but is sensitive to the temperature and detuning. The optimal excitation parameters are identified.
△ Less
Submitted 10 January, 2018; v1 submitted 21 February, 2013;
originally announced February 2013.
-
Exchange of signals around the event horizon in Schwarzschild space-time
Authors:
M. Gawełczyk,
J. Polonyi,
A. Radosz,
A. Siwek
Abstract:
Red shift in communication and possibility of interaction is discussed for objects around the event horizon of Schwarzschild space-time. It is pointed out that the arrow of time within the horizon cannot always be inferred by observations carried out outside. Two scenarios are presented for the causal structure of the space-time and it is found that in one of them extended objects fall apart into…
▽ More
Red shift in communication and possibility of interaction is discussed for objects around the event horizon of Schwarzschild space-time. It is pointed out that the arrow of time within the horizon cannot always be inferred by observations carried out outside. Two scenarios are presented for the causal structure of the space-time and it is found that in one of them extended objects fall apart into their elementary constituents by crossing the horizon.
△ Less
Submitted 20 January, 2012;
originally announced January 2012.
