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Determination of Low Loss in Isotopically Pure Single Crystal $^{28}$Si at Low Temperatures and Single Microwave Photon Energy
Authors:
Nikita Kostylev,
Maxim Goryachev,
Andrey D. Bulanov,
Vladimir A. Gavva,
Michael E. Tobar
Abstract:
The low dielectric losses of an isotropically pure single crystal $^{28}$Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality Factors of order $2\times10^6$ (dielectric loss $\sim 5\times10^{-7}$) at high powers, degrading to $7\times10^5$ (dielectric loss $\sim 1.4\times10^{-6}$) at s…
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The low dielectric losses of an isotropically pure single crystal $^{28}$Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality Factors of order $2\times10^6$ (dielectric loss $\sim 5\times10^{-7}$) at high powers, degrading to $7\times10^5$ (dielectric loss $\sim 1.4\times10^{-6}$) at single photon energy. A very low-loss narrow line width paramagnetic spin flip transition was detected with extreme sensitivity in $^{28}$Si, with very small concentration below $10^{11}$~cm$^{-3}$ (less than 10 parts per trillion) and g-factor of $1.995\pm0.008$. Such determination was only possible due to the low dielectric photonic losses combined with the long lifetime of the spin transition (low magnetic loss), which enhances the magnetic AC susceptibility. Such low photonic loss at single photon energy combined with the narrow line width of the spin ensemble, indicate that single crystal $^{28}$Si could be an important crystal for future cavity QED experiments.
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Submitted 10 September, 2016; v1 submitted 16 June, 2016;
originally announced June 2016.
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Luminescent Ge-related centre in high-pressure synthesized diamond
Authors:
E. A. Ekimov,
S. G. Lyapin,
K. N. Boldyrev,
M. V. Kondrin,
R. Khmelnitskiy,
V. A. Gavva,
T. V. Kotereva,
M. N. Popova
Abstract:
We report on the high-pressure synthesis of novel nano- and microcrystalline high-quality diamonds with luminescent Ge-related centers. Observation of the four-line fine structure in luminescence at 2 eV (602 nm) at temperatures below 80 K manifests a high quality of diamonds. We demonstrate germanium and carbon isotope shifts in the fine structure of luminescence at 602 nm and its vibrational sid…
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We report on the high-pressure synthesis of novel nano- and microcrystalline high-quality diamonds with luminescent Ge-related centers. Observation of the four-line fine structure in luminescence at 2 eV (602 nm) at temperatures below 80 K manifests a high quality of diamonds. We demonstrate germanium and carbon isotope shifts in the fine structure of luminescence at 602 nm and its vibrational sideband which allows us to unambiguously associate the center with the germanium impurity entering into the diamond lattice. We show that there are two ground-state energy levels with the separation of 0.7 meV and two excited-state levels separated by 4.6 meV in the electronic structure of the center and suggest a split-vacancy structure of this center.
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Submitted 20 October, 2015;
originally announced October 2015.
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Refractive index spectral dependence, Raman and transmission spectra of high-purity $^{28}$Si, $^{29}$Si, $^{30}$Si, and $^{nat}$Si single crystals
Authors:
V. G. Plotnichenko,
V. O. Nazaryants,
E. B. Kryukova,
V. V. Koltashev,
V. O. Sokolov,
E. M. Dianov,
A. V. Gusev,
V. A. Gavva,
T. V. Kotereva,
M. F. Churbanov
Abstract:
Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of…
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Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of $2 \times 10^{-5} ... 1 \times 10^{-4}$. The oxygen and carbon concentrations in all crystals are within $5 \times 10^{15}$ cm$^{-3}$ and the content of metal impurities is $10^{-5} ... 10^{-6}$ at.%. The peculiar changes of the refractive index in the phonon absorption region of all silicon single crystals are shown. The coefficients of generalized Cauchy dispersion function approximating the experimental refractive index values all over the measuring range are given. The transmission and Raman spectra are also studied.
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Submitted 4 May, 2011;
originally announced May 2011.
