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Tkwant: a software package for time-dependent quantum transport
Authors:
Thomas Kloss,
Joseph Weston,
Benoit Gaury,
Benoit Rossignol,
Christoph Groth,
Xavier Waintal
Abstract:
Tkwant is a Python package for the simulation of quantum nanoelectronics devices to which external time-dependent perturbations are applied. Tkwant is an extension of the Kwant package (https://kwant-project.org/) and can handle the same types of systems: discrete tight-binding-like models that consist of an arbitrary central region connected to semi-infinite electrodes. The problem is genuinely m…
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Tkwant is a Python package for the simulation of quantum nanoelectronics devices to which external time-dependent perturbations are applied. Tkwant is an extension of the Kwant package (https://kwant-project.org/) and can handle the same types of systems: discrete tight-binding-like models that consist of an arbitrary central region connected to semi-infinite electrodes. The problem is genuinely many-body even in the absence of interactions and is treated within the non-equilibrium Keldysh formalism. Examples of Tkwant applications include the propagation of plasmons generated by voltage pulses, propagation of excitations in the quantum Hall regime, spectroscopy of Majorana fermions in semiconducting nanowires, current-induced skyrmion motion in spintronic devices, multiple Andreev reflection, Floquet topological insulators, thermoelectric effects, and more. The code has been designed to be easy to use and modular. Tkwant is free software distributed under a BSD license and can be found at https://tkwant.kwant-project.org/.
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Submitted 22 February, 2021; v1 submitted 7 September, 2020;
originally announced September 2020.
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Quantitative theory of the grain boundary impact on the open-circuit voltage of polycrystalline solar cells
Authors:
Benoit Gaury,
Paul M. Haney
Abstract:
Thin film polycrystalline photovoltaics are a mature, commercially-relevant technology. However, basic questions persist about the role of grain boundaries in the performance of these materials, and the extent to which these defects may limit further progress. In this work, we first extend previous analysis of columnar grain boundaries to develop a model of the recombination current of "tilted" gr…
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Thin film polycrystalline photovoltaics are a mature, commercially-relevant technology. However, basic questions persist about the role of grain boundaries in the performance of these materials, and the extent to which these defects may limit further progress. In this work, we first extend previous analysis of columnar grain boundaries to develop a model of the recombination current of "tilted" grain boundaries. We then consider systems with multiple, intersecting grain boundaries and numerically determine the parameter space for which our analytical model accurately describes the recombination current. We find that for material parameters relevant for thin film photovoltaics, our model can be applied to compute the open-circuit voltage of materials with networks of inhomogeneous grain boundaries. This model bridges the gap between the distribution of grain boundary properties observed with nanoscale characterization and their influence on the macroscale device open-circuit voltage.
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Submitted 10 February, 2019;
originally announced February 2019.
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Sesame: a 2-dimensional solar cell modeling tool
Authors:
Benoit Gaury,
Yubo Sun,
Peter Bermel,
Paul M. Haney
Abstract:
This work introduces a new software package `Sesame' for the numerical computation of classical semiconductor equations. It supports 1 and 2-dimensional systems and provides tools to easily implement extended defects such as grain boundaries or sample surfaces. Sesame has been designed to facilitate fast exploration of the system parameter space and to visualize local charge transport properties.…
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This work introduces a new software package `Sesame' for the numerical computation of classical semiconductor equations. It supports 1 and 2-dimensional systems and provides tools to easily implement extended defects such as grain boundaries or sample surfaces. Sesame has been designed to facilitate fast exploration of the system parameter space and to visualize local charge transport properties. Sesame is distributed as a Python package or as a standalone GUI application, and is available at https://pages.nist.gov/sesame/ .
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Submitted 4 June, 2018;
originally announced June 2018.
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Charged grain boundaries and carrier recombination in polycrystalline thin film solar cells
Authors:
Benoit Gaury,
Paul M. Haney
Abstract:
We present analytical relations for the dark recombination current of a $pn^+$ junction with positively charged columnar grain boundaries in the high defect density regime. We consider two defect state configurations relevant for positively charged grain boundaries: a single donor state and a continuum of both acceptors and donors. Compared to a continuum of acceptor+donor states, or to the previo…
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We present analytical relations for the dark recombination current of a $pn^+$ junction with positively charged columnar grain boundaries in the high defect density regime. We consider two defect state configurations relevant for positively charged grain boundaries: a single donor state and a continuum of both acceptors and donors. Compared to a continuum of acceptor+donor states, or to the previously studied single acceptor+donor state, the grain boundary recombination of a single donor state is suppressed by orders of magnitude. We show numerically that superposition holds near the open-circuit voltage $V_{\rm oc}$, so that our dark $J(V)$ relations determine $V_{\rm oc}$ for a given short circuit current $J_{\rm sc}$. We finally explicitly show how $V_{\rm oc}$ depends on the grain boundary defect state configurations.
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Submitted 3 January, 2018; v1 submitted 12 April, 2017;
originally announced April 2017.
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Charged grain boundaries reduce the open circuit voltage of polycrystalline solar cells--An analytical description
Authors:
Benoit Gaury,
Paul M. Haney
Abstract:
Analytic expressions are presented for the dark current-voltage relation $J(V)$ of a $pn^+$ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the…
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Analytic expressions are presented for the dark current-voltage relation $J(V)$ of a $pn^+$ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the dark $J(V)$ can be used to determine the open circuit potential $V_{\rm oc}$ of an illuminated junction for a given short-circuit current density $J_{\rm sc}$ . A precise relation between the grain boundary properties and $V_{\rm oc}$ is provided, advancing the understanding of the influence of grain boundaries on the efficiency of thin film polycrystalline photovoltaics like CdTe and $\mathrm{Cu(In,Ga)Se_2}$.
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Submitted 19 December, 2016; v1 submitted 26 August, 2016;
originally announced August 2016.
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Minority-carrier dynamics in semiconductors probed by two-photon microscopy
Authors:
Benoit Gaury,
Paul M. Haney
Abstract:
Two-photon time-resolved photoluminescence has been recently applied to various semiconductor devices to determine carrier lifetime and surface recombination velocities. So far the theoretical modeling activity has been mainly limited to the commonly used one-photon counterpart of the technique. Here we provide the analytical solution to a 3D diffusion equation that describes two-photon microscopy…
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Two-photon time-resolved photoluminescence has been recently applied to various semiconductor devices to determine carrier lifetime and surface recombination velocities. So far the theoretical modeling activity has been mainly limited to the commonly used one-photon counterpart of the technique. Here we provide the analytical solution to a 3D diffusion equation that describes two-photon microscopy in the low-injection regime. We focus on a system with a single buried interface with enhanced recombination, and analyze how transport, bulk and surface recombinations influence photoluminescence decays. We find that bulk measurements are dominated by diffusion at short times and by bulk recombination at long times. Surface recombination modifies bulk signals when the optical spot is less than a diffusion length away from the probed interface. In addition, the resolution is increased as the spot size is reduced, which however makes the signal more sensitive to diffusion.
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Submitted 13 June, 2016;
originally announced June 2016.
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Depletion region surface effects in electron beam induced current measurements
Authors:
Paul M. Haney,
Heayoung P. Yoon,
Benoit Gaury,
Nikolai B. Zhitenev
Abstract:
Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the $p$-$n$ junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a r…
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Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the $p$-$n$ junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a reduced and nonuniform EBIC lineshape for excitations in the depletion region. Motivated by this, we present a model of the EBIC response for excitations in the depletion region which includes the effects of surface recombination from both charge-neutral and charged surfaces. For neutral surfaces we present a simple analytical formula which describes the numerical data well, while the charged surface response depends qualitatively on the location of the surface Fermi level relative to the bulk Fermi level. We find the experimental data on FIB-prepared Si solar cells is most consistent with a charged surface, and discuss the implications for EBIC experiments on polycrystalline materials.
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Submitted 9 September, 2016; v1 submitted 13 May, 2016;
originally announced May 2016.
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Probing surface recombination velocities in semiconductors using two-photon microscopy
Authors:
Benoit Gaury,
Paul Haney
Abstract:
The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows for better measurements of bulk and subsurface interfaces properties. Here we analyze the diffusion problem related to this optical technique. Our three-dimension…
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The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows for better measurements of bulk and subsurface interfaces properties. Here we analyze the diffusion problem related to this optical technique. Our three-dimensional treatment enables us to separate lifetime (recombination) from transport effects (diffusion) in the photoluminescence intensity. It also allows us to consider surface recombination occurring at a variety of geometries: a single plane (representing an isolated exposed or buried interface), two parallel planes (representing two inequivalent interfaces), and a spherical surface (representing the enclosing surface of a grain boundary). We provide fully analytical results and scalings directly amenable to data fitting, and apply those to experimental data collected on heteroepitaxial CdTe/ZnTe/Si.
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Submitted 20 January, 2016;
originally announced January 2016.
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A computational approach to quantum noise in time-dependent nanoelectronic devices
Authors:
Benoit Gaury,
Xavier Waintal
Abstract:
We derive simple expressions that relate the noise and correlation properties of a general time-dependent quantum conductor to the wave functions of the system. The formalism provides a practical route for numerical calculations of quantum noise in an externally driven system. We illustrate the approach with numerical calculations of the noise properties associated to a voltage pulse applied on a…
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We derive simple expressions that relate the noise and correlation properties of a general time-dependent quantum conductor to the wave functions of the system. The formalism provides a practical route for numerical calculations of quantum noise in an externally driven system. We illustrate the approach with numerical calculations of the noise properties associated to a voltage pulse applied on a one-dimensional conductor. The methodology is however fully general and can be used for a large class of mesoscopic conductors.
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Submitted 24 June, 2015;
originally announced June 2015.
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Manipulating Andreev and Majorana Bound States with microwaves
Authors:
Joseph Weston,
Benoit Gaury,
Xavier Waintal
Abstract:
We study the interplay between Andreev (Majorana) bound states that form at the boundary of a (topological) superconductor and a train of microwave pulses. We find that the extra dynamical phase coming from the pulses can shift the phase of the Andreev reflection, resulting in the appear- ance of dynamical Andreev states. As an application we study the presence of the zero bias peak in the differe…
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We study the interplay between Andreev (Majorana) bound states that form at the boundary of a (topological) superconductor and a train of microwave pulses. We find that the extra dynamical phase coming from the pulses can shift the phase of the Andreev reflection, resulting in the appear- ance of dynamical Andreev states. As an application we study the presence of the zero bias peak in the differential conductance of a normal-topological superconductor junction - the simplest, yet somehow ambiguous, experimental signature for Majorana states. Adding microwave radiation to the measuring electrodes provides an unambiguous probe of the Andreev nature of the zero bias peak.
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Submitted 30 July, 2015; v1 submitted 25 November, 2014;
originally announced November 2014.
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AC Josephson effect without superconductivity
Authors:
Benoit Gaury,
Joseph Weston,
Xavier Waintal
Abstract:
Superconductivity derives its most salient features from the coherence of its macroscopic wave function. The associated physical phenomena have now moved from exotic subjects to fundamental building blocks for quantum circuits such as qubits or single photonic modes. Here, we theoretically find that the AC Josephson effect---which transforms a DC voltage $V_b$ into an oscillating signal…
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Superconductivity derives its most salient features from the coherence of its macroscopic wave function. The associated physical phenomena have now moved from exotic subjects to fundamental building blocks for quantum circuits such as qubits or single photonic modes. Here, we theoretically find that the AC Josephson effect---which transforms a DC voltage $V_b$ into an oscillating signal $cos(2eV_b t/ \hbar)$---has a mesoscopic counterpart in normal conductors. We show that on applying a DC voltage $V_b$ to an electronic interferometer, there exists a universal transient regime where the current oscillates at frequency $eV_b/h$. This effect is not limited by a superconducting gap and could, in principle, be used to produce tunable AC signals in the elusive $0.1-10$ THz "terahertz gap".
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Submitted 15 July, 2014;
originally announced July 2014.
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Classical and quantum spreading of a charge pulse
Authors:
Benoit Gaury,
Joseph Weston,
Christoph Groth,
Xavier Waintal
Abstract:
With the technical progress of radio-frequency setups, high frequency quantum transport experiments have moved from theory to the lab. So far the standard theoretical approach used to treat such problems numerically--known as Keldysh or NEGF (Non Equilibrium Green's Functions) formalism--has not been very successful mainly because of a prohibitive computational cost. We propose a reformulation of…
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With the technical progress of radio-frequency setups, high frequency quantum transport experiments have moved from theory to the lab. So far the standard theoretical approach used to treat such problems numerically--known as Keldysh or NEGF (Non Equilibrium Green's Functions) formalism--has not been very successful mainly because of a prohibitive computational cost. We propose a reformulation of the non-equilibrium Green's function technique in terms of the electronic wave functions of the system in an energy-time representation. The numerical algorithm we obtain scales now linearly with the simulated time and the volume of the system, and makes simulation of systems with 10^5 - 10^6 atoms/sites feasible. We illustrate our method with the propagation and spreading of a charge pulse in the quantum Hall regime. We identify a classical and a quantum regime for the spreading, depending on the number of particles contained in the pulse. This numerical experiment is the condensed matter analogue to the spreading of a Gaussian wavepacket discussed in quantum mechanics textbooks.
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Submitted 15 July, 2014; v1 submitted 27 June, 2014;
originally announced June 2014.
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Stop** electrons with radio-frequency pulses in the quantum Hall regime
Authors:
Benoit Gaury,
Joseph Weston,
Xavier Waintal
Abstract:
Most functionalities of modern electronic circuits rely on the possibility to modify the path fol- lowed by the electrons using, e.g. field effect transistors. Here we discuss the interplay between the modification of this path and the quantum dynamics of the electronic flow. Specifically, we study the propagation of charge pulses through the edge states of a two-dimensional electron gas in the qu…
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Most functionalities of modern electronic circuits rely on the possibility to modify the path fol- lowed by the electrons using, e.g. field effect transistors. Here we discuss the interplay between the modification of this path and the quantum dynamics of the electronic flow. Specifically, we study the propagation of charge pulses through the edge states of a two-dimensional electron gas in the quantum Hall regime. By sending radio-frequency (RF) excitations on a top gate capacitively coupled to the electron gas, we manipulate these edge state dynamically. We find that a fast RF change of the gate voltage can stop the propagation of the charge pulse inside the sample. This effect is intimately linked to the vanishing velocity of bulk states in the quantum Hall regime and the peculiar connection between momentum and transverse confinement of Landau levels. Our findings suggest new possibilities for stop**, releasing and switching the trajectory of charge pulses in quantum Hall systems.
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Submitted 14 May, 2014;
originally announced May 2014.
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Dynamical control of interference using voltage pulses in the quantum regime
Authors:
Benoit Gaury,
Xavier Waintal
Abstract:
As a general trend, nanoelectronics experiments are shifting toward frequencies so high that they become comparable to the device's internal characteristic time scales, resulting in new opportunities for studying the dynamical aspects of quantum mechanics. Here we theoretically study how a voltage pulse (in the quantum regime) propagates through an electronic interferometer (Fabry- Perot or Mach-Z…
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As a general trend, nanoelectronics experiments are shifting toward frequencies so high that they become comparable to the device's internal characteristic time scales, resulting in new opportunities for studying the dynamical aspects of quantum mechanics. Here we theoretically study how a voltage pulse (in the quantum regime) propagates through an electronic interferometer (Fabry- Perot or Mach-Zehnder). We show that extremely fast pulses provide a conceptually new tool for manipulating quantum information: the possibility to dynamically engineer the interference pattern of a quantum system. Striking physical signatures are associated with this new regime: restoration of the interference in presence of large bias voltages; negative currents with respect to the direction of propagation of the voltage pulse; and oscillation of the total transmitted charge with the total number of injected electrons. The present findings have been made possible by the recent unlocking of our capability for simulating time-resolved quantum nanoelectronics of large systems.
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Submitted 14 May, 2014; v1 submitted 21 January, 2014;
originally announced January 2014.
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Numerical simulations of time resolved quantum electronics
Authors:
Benoit Gaury,
Joseph Weston,
Matthieu Santin,
Manuel Houzet,
Christoph Groth,
Xavier Waintal
Abstract:
This paper discusses the technical aspects - mathematical and numerical - associated with the numerical simulations of a mesoscopic system in the time domain (i.e. beyond the single frequency AC limit). After a short review of the state of the art, we develop a theoretical framework for the calculation of time resolved observables in a general multiterminal system subject to an arbitrary time depe…
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This paper discusses the technical aspects - mathematical and numerical - associated with the numerical simulations of a mesoscopic system in the time domain (i.e. beyond the single frequency AC limit). After a short review of the state of the art, we develop a theoretical framework for the calculation of time resolved observables in a general multiterminal system subject to an arbitrary time dependent perturbation (oscillating electrostatic gates, voltage pulses, time-vaying magnetic fields) The approach is mathematically equivalent to (i) the time dependent scattering formalism, (ii) the time resolved Non Equilibrium Green Function (NEGF) formalism and (iii) the partition-free approach. The central object of our theory is a wave function that obeys a simple Schrodinger equation with an additional source term that accounts for the electrons injected from the electrodes. The time resolved observables (current, density. . .) and the (inelastic) scattering matrix are simply expressed in term of this wave function. We use our approach to develop a numerical technique for simulating time resolved quantum transport. We find that the use of this wave function is advantageous for numerical simulations resulting in a speed up of many orders of magnitude with respect to the direct integration of NEGF equations. Our technique allows one to simulate realistic situations beyond simple models, a subject that was until now beyond the simulation capabilities of available approaches.
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Submitted 18 February, 2014; v1 submitted 24 July, 2013;
originally announced July 2013.