-
Automated detection and map** of crystal tilt using thermal diffuse scattering in transmission electron microscopy
Authors:
Mauricio Cattaneo,
Knut Müller-Caspary,
Juri Barthel,
Katherine E. Mac Arthur,
Nicolas Gauquelin,
Marta Lipinska-Chwalek,
Johan Verbeeck,
Leslie J. Allen,
Rafal E. Dunin-Borkowski
Abstract:
Quantitative interpretation of transmission electron microscopy (TEM) data of crystalline specimens often requires the accurate knowledge of the local crystal orientation. A method is presented which exploits momentum-resolved scanning TEM (STEM) data to determine the local mistilt from a major zone axis. It is based on a geometric analysis of Kikuchi bands within a single diffraction pattern, yie…
▽ More
Quantitative interpretation of transmission electron microscopy (TEM) data of crystalline specimens often requires the accurate knowledge of the local crystal orientation. A method is presented which exploits momentum-resolved scanning TEM (STEM) data to determine the local mistilt from a major zone axis. It is based on a geometric analysis of Kikuchi bands within a single diffraction pattern, yielding the centre of the Laue circle. Whereas the approach is not limited to convergent illumination, it is here developed using unit-cell averaged diffraction patterns corresponding to high-resolution STEM settings. In simulation studies, an accuracy of approximately 0.1mrad is found. The method is implemented in automated software and applied to crystallographic tilt and in-plane rotation map** in two experimental cases. In particular, orientation maps of high-Mn steel and an epitaxially grown La$_{\text{0.7}}$Sr$_{\text{0.3}}$MnO$_{\text{3}}$-SrTiO$_{\text{3}}$ interface are presented. The results confirm the estimates of the simulation study and indicate that tilt map** can be performed consistently over a wide field of view with diameters well above 100nm at unit cell real space sampling.
△ Less
Submitted 20 June, 2024;
originally announced June 2024.
-
Imaging the suppression of ferromagnetism in LaMnO$_3$ by metallic overlayers
Authors:
Bart Folkers,
Thies Jansen,
Thijs J. Roskamp,
Pim Reith,
André Timmermans,
Daen Jannis,
Nicolas Gauquelin,
Johan Verbeeck,
Hans Hilgenkamp,
Carlos M. M. Rosário
Abstract:
LaMnO$_3$ (LMO) thin films epitaxially grown on SrTiO$_3$ (STO) usually exhibit ferromagnetism above a critical layer thickness. We report the use of scanning SQUID microscopy (SSM) to study the suppression of the ferromagnetism in STO/LMO/metal structures. By partially covering the LMO surface with a metallic layer, both covered and uncovered LMO regions can be studied simultaneously. While Au do…
▽ More
LaMnO$_3$ (LMO) thin films epitaxially grown on SrTiO$_3$ (STO) usually exhibit ferromagnetism above a critical layer thickness. We report the use of scanning SQUID microscopy (SSM) to study the suppression of the ferromagnetism in STO/LMO/metal structures. By partially covering the LMO surface with a metallic layer, both covered and uncovered LMO regions can be studied simultaneously. While Au does not significantly influence the ferromagnetic order of the underlying LMO film, a thin Ti layer induces a strong suppression of the ferromagnetism, over tens of nanometers, which increases with time on a timescale of days. Detailed EELS analysis of the Ti-LaMnO$_3$ interface reveals \textcolor{black}{the presence of Mn$^{2+}$ and} an evolution of the Ti valence state from Ti$^0$ to Ti$^{4+}$ over approximately 5 nanometers. Furthermore, we demonstrate that by patterning Ti/Au overlayers, we can locally suppress the ferromagnetism and define ferromagnetic structures down to sub-micrometer scales.
△ Less
Submitted 21 May, 2024; v1 submitted 9 October, 2023;
originally announced October 2023.
-
Pattern Formation by Electric-field Quench in Mott Crystal
Authors:
Nicolas Gauquelin,
Filomena Forte,
Daen Jannis,
Rosalba Fittipaldi,
Carmine Autieri,
Giuseppe Cuono,
Veronica Granata,
Mariateresa Lettieri,
Canio Noce,
Fabio Miletto Granozio,
Antonio Vecchione,
Johan Verbeeck,
Mario Cuoco
Abstract:
The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the ins…
▽ More
The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field, it is non-volatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of non-volatile electronics based on voltage-controlled nanometric phases.
△ Less
Submitted 31 May, 2023;
originally announced May 2023.
-
High-strain-induced local modification of the electronic properties of VO$_2$ thin films
Authors:
Yorick A. Birkhölzer,
Kai Sotthewes,
Nicolas Gauquelin,
Lars Riekehr,
Daen Jannis,
Emma van der Minne,
Yibin Bu,
Johan Verbeeck,
Harold J. W. Zandvliet,
Gertjan Koster,
Guus Rijnders
Abstract:
Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortions, as well as the symmetry change, and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the…
▽ More
Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortions, as well as the symmetry change, and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue towards mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surfacelayer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.
△ Less
Submitted 13 October, 2022;
originally announced October 2022.
-
Alternating superconducting and charge density wave monolayers within bulk 6R-TaS2
Authors:
A. Achari,
J. Bekaert,
V. Sreepal,
A. Orekhov,
P. Kumaravadivel,
M. Kim,
N. Gauquelin,
P. Balakrishna Pillai,
J. Verbeeck,
F. M. Peeters,
A. K. Geim,
M. V. Milosevic,
R. R. Nair
Abstract:
Van der Waals (vdW) heterostructures continue to attract intense interest as a route of designing materials with novel properties that cannot be found in naturally occurring materials. Unfortunately, this approach is currently limited to only a few layers that can be stacked on top of each other. Here we report a bulk material consisting of superconducting monolayers interlayered with monolayers d…
▽ More
Van der Waals (vdW) heterostructures continue to attract intense interest as a route of designing materials with novel properties that cannot be found in naturally occurring materials. Unfortunately, this approach is currently limited to only a few layers that can be stacked on top of each other. Here we report a bulk material consisting of superconducting monolayers interlayered with monolayers displaying charge density waves (CDW). This bulk vdW heterostructure is created by phase transition of 1T-TaS2 to 6R at 800 °C in an inert atmosphere. Electron microscopy analysis directly shows the presence of alternating 1T and 1H monolayers within the resulting bulk 6R phase. Its superconducting transition (Tc) is found at 2.6 K, exceeding the Tc of the bulk 2H phase of TaS2. The superconducting temperature can be further increased to 3.6 K by exfoliating 6R-TaS2 and then restacking its layers. Using first-principles calculations, we argue that the coexistence of superconductivity and CDW within 6R-TaS2 stems from amalgamation of the properties of adjacent 1H and 1T monolayers, where the former dominates the superconducting state and the latter the CDW behavior.
△ Less
Submitted 23 June, 2022;
originally announced June 2022.
-
Induced Giant Piezoelectricity in Centrosymmetric Oxides
Authors:
D. -S. Park,
M. Hadad,
L. M. Rimer,
R. Ignatans,
D. Spirito,
V. Esposito,
V. Tileli,
N. Gauquelin,
D. Chezganov,
D. Jannis J. Verbeeck,
S. Gorfman,
N. Pryds,
P. Muralt,
D. Damjanovic
Abstract:
Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustai…
▽ More
Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustainable piezoelectric effects in centrosymmetric materials by electric field induced rearrangement of oxygen vacancies Surprisingly, the results show the generation of extraordinarily large piezoelectric responses d33 ~200,000 pm/V), in cubic fluorite Gd-doped CeO2-x films, which is two orders of magnitude larger than in the presently best known lead based piezoelectric relaxor ferroelectric oxide. These findings open opportunities to design new piezoelectric materials from environmentally friendly centrosymmetric ones.
△ Less
Submitted 10 February, 2022; v1 submitted 1 November, 2021;
originally announced November 2021.
-
On the resistance minimum in LaAlO$_3$/Eu$_{1-x}$La$_x$TiO$_3$/SrTiO$_3$ heterostructures
Authors:
N. Lebedev,
Y. Huang,
A. Rana,
D. Jannis,
N. Gauquelin,
J. Verbeeck,
J. Aarts
Abstract:
In this paper we study LaAlO$_3$/Eu$_{1-x}$La$_x$TiO$_3$/SrTiO$_3$ structures with nominally x = 0, 0.1 and different thicknesses of the Eu$_{1-x}$La$_x$TiO$_3$ layer. We observe that both systems have many properties similar to previously studied LaAlO$_3$/EuTiO$_3$/SrTiO$_3$ and other oxide interfaces, such as the formation of a 2D electron liquid for 1 or 2 unit cells of Eu$_{1-x}$La$_x$TiO…
▽ More
In this paper we study LaAlO$_3$/Eu$_{1-x}$La$_x$TiO$_3$/SrTiO$_3$ structures with nominally x = 0, 0.1 and different thicknesses of the Eu$_{1-x}$La$_x$TiO$_3$ layer. We observe that both systems have many properties similar to previously studied LaAlO$_3$/EuTiO$_3$/SrTiO$_3$ and other oxide interfaces, such as the formation of a 2D electron liquid for 1 or 2 unit cells of Eu$_{1-x}$La$_x$TiO$_3$; a metal-insulator transition driven by the thickness increase of Eu$_{1-x}$La$_x$TiO$_3$ layer; the presence of an Anomalous Hall effect (AHE) when driving the systems above the Lifshitz point with a backgate voltage; and a minimum in the temperature dependence of the sheet resistance below the Lifshitz point in the one-band regime, which becomes more pronounced with increasing gate voltage. However, and notwithstanding the likely presence of magnetism in the system, we do not attribute that minimum to the Kondo effect, but rather to the properties of SrTiO$_3$ crystal and the inevitable effects of charge trap** when using back gates.
△ Less
Submitted 1 September, 2021;
originally announced September 2021.
-
Coupling charge and topological reconstructions at polar oxide interfaces
Authors:
T. C. van Thiel,
W. Brzezicki,
C. Autieri,
J. R. Hortensius,
D. Afanasiev,
N. Gauquelin,
D. Jannis,
N. Janssen,
D. J. Groenendijk,
J. Fatermans,
S. van Aert,
J. Verbeeck,
M. Cuoco,
A. D. Caviglia
Abstract:
In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventiona…
▽ More
In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wavefunctions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO$_3$, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO$_3$, a polar wide-bandgap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO$_2$/SrO interface configuration, leading to excess charge being pinned near the LaAlO$_3$/SrRuO$_3$ interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction modifies the momentum-space Berry curvature in SrRuO$_3$, driving a reorganization of the topological charges in the band structure. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.
△ Less
Submitted 7 July, 2021;
originally announced July 2021.
-
Optical versus electron diffraction imaging of Twist-angle in 2D transition metal dichalcogenide bilayer superlattices
Authors:
S. Psilodimitrakopoulos,
A. Orekhov,
L. Mouchliadis,
D. Jannis,
G. M. Maragkakis,
G. Kourmoulakis,
N. Gauquelin,
G. Kioseoglou,
J. Verbeeck,
E. Stratakis
Abstract:
Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two monolayers, coined as twist-angle, modifies the crystal symmetry and creates a superlattice with exciting properties. Here, we demonstrate an all-optical…
▽ More
Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two monolayers, coined as twist-angle, modifies the crystal symmetry and creates a superlattice with exciting properties. Here, we demonstrate an all-optical method for pixel-by-pixel map** of the twist-angle with resolution of 0.23 degrees, via polarization-resolved second harmonic generation (P-SHG) microscopy and we compare it with four-dimensional scanning transmission electron microscopy (4D-STEM). It is found that the twist-angle imaging of WS2 bilayers, using the P-SHG technique is in excellent agreement with that obtained using electron diffraction. The main advantages of the optical approach are that the characterization is performed on the same substrate that the device is created on and that it is three orders of magnitude faster than the 4D-STEM. We envisage that the optical P-SHG imaging could become the gold standard for the quality examination of TMD superlattice-based devices.
△ Less
Submitted 12 April, 2021;
originally announced April 2021.
-
Wide field of view crystal orientation map** of layered materials
Authors:
A. Orekhov,
D. Jannis,
N. Gauquelin,
G. Guzzinati,
A. Nalin Mehta,
S. Psilodimitrakopoulos,
L. Mouchliadis,
P. K. Sahoo,
I. Paradisanos,
A. C. Ferrari,
G. Kioseoglou,
E. Stratakis,
J. Verbeeck
Abstract:
Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning elect…
▽ More
Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning electron microscope into a tool for structural analysis of a wide range of LMs. An hybrid pixel electron detector below the sample makes it possible to record two dimensional (2d) diffraction patterns for every probe position on the sample surface (2d), in transmission mode, thus performing a 2d+2d=4d STEM (scanning transmission electron microscopy) analysis. This offers a field of view up to 2 mm2, while providing spatial resolution in the nm range, enabling the collection of statistical data on grain size, relative orientation angle, bilayer stacking, strain, etc. which can be mined through automated open-source data analysis software. We demonstrate this approach by analyzing a variety of LMs, such as mono- and multi-layer graphene, graphene oxide and MoS2, showing the ability of this method to characterize them in the tens of nm to mm scale. This wide field of view range and the resulting statistical information are key for large scale applications of LMs.
△ Less
Submitted 3 November, 2020;
originally announced November 2020.
-
Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces
Authors:
N. Lebedev,
M. Stehno,
A. Rana,
N. Gauquelin,
J. Verbeeck,
A. Brinkman,
J. Aarts
Abstract:
We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conducti…
▽ More
We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conductivity arises mainly on the STO side of the interface, and shows all the signs of the 2-dimensional electron gas usually observed at interfaces between SrTiO3 and LaTiO3 or LaAlO3, including the presence of two electron bands and tunability with a gate voltage. Analysis of magnetoresistance (MR) and superconductivity indicates presence of a spatial fluctuations of the electronic properties in our samples. That can explain the observed quasilinear out-of-plane MR, as well as various features of the in-plane MR and the observed superconductivity.
△ Less
Submitted 7 August, 2020;
originally announced August 2020.
-
Gate-tuned Anomalous Hall Effect Driven by Rashba Splitting in Intermixed LaAlO3/GdTiO3/SrTiO3
Authors:
N. Lebedev,
M. Stehno,
A. Rana,
P. Reith,
N. Gauquelin,
J. Verbeeck,
H. Hilgenkamp,
A. Brinkman,
J. Aarts
Abstract:
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the in…
▽ More
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the influence of magnetic ions by measuring intermixed LaAlO3/GdTiO3/SrTiO3 at temperatures below 10 K. We find that, as function of gate voltage, the system undergoes a Lifshitz transition, while at the same time an onset of AHE is observed. However, we do not observe clear signs of ferromagnetism. We argue the AHE to be due to the change in Rashba spin-orbit coupling at the Lifshitz transition and conclude that also paramagnetic moments which are easily polarizable at low temperatures and high magnetic filds lead to the presence of AHE, which needs to be taken into account when extracting carrier densities and mobilities.
△ Less
Submitted 26 February, 2020;
originally announced February 2020.
-
Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects
Authors:
Shih-Chieh Lin,
Cheng-Tai Kuo,
Yu-Cheng Shao,
Yi-De Chuang,
Jaap Geessinck,
Mark Huijben,
Jean-Pascal Rueff,
Ismael L. Graff,
Giuseppina Conti,
Yingying Peng,
Aaron Bostwick,
Eli Rotenberg,
Eric Gullikson,
Slavomír Nemšák,
Arturas Vailionis,
Nicolas Gauquelin,
Johan Verbeeck,
Giacomo Ghiringhelli,
Claus M. Schneider,
Charles S. Fadley
Abstract:
The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a c…
▽ More
The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a comprehensive spectroscopic investigation of the depth profile of 2DES-relevant Ti 3d interface carriers using depth- and element-specific techniques, standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within 3 unit cells from the n-type interface in the SrTiO3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first 3 unit cells of the opposing LaAlO3 layer (~10 Å). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO3/SrTiO3 interface have disparate explanations as originating from different types of interface carriers.
△ Less
Submitted 29 October, 2020; v1 submitted 21 December, 2019;
originally announced December 2019.
-
Efficient charge modulation in ultrathin LaAlO$_3$-SrTiO$_3$ field-effect transistors
Authors:
A. E. M. Smink,
B. Prabowo,
B. Stadhouder,
N. Gauquelin,
J. Schmitz,
H. Hilgenkamp,
W. G. van der Wiel
Abstract:
At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable transistor operation in locally gated LaAlO$_3$-SrTiO$_3$ field-effect devices of which the LaAlO$_3$ dielectric is only four unit cells thin, the cri…
▽ More
At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable transistor operation in locally gated LaAlO$_3$-SrTiO$_3$ field-effect devices of which the LaAlO$_3$ dielectric is only four unit cells thin, the critical thickness for conduction at this interface. This extremely thin dielectric allows a very efficient charge modulation of ${\sim}3.2\times10^{13}$ cm$^{-2}$ within a gate-voltage window of $\pm1$ V, as extracted from capacitance-voltage measurements. These also reveal a large stray capacitance between gate and source, presenting a complication for nanoscale device operation. Despite the small LaAlO$_3$ thickness, we observe a negligible gate leakage current, which we ascribe to the extension of the conducting states into the SrTiO$_3$ substrate.
△ Less
Submitted 27 September, 2019;
originally announced September 2019.
-
Full control of Co valence in isopolar LaCoO3 / LaTiO3 perovskite heterostructures via interfacial engineering
Authors:
Georgios Araizi-Kanoutas,
Jaap Geessinck,
Nicolas Gauquelin,
Steef Smit,
Xanthe Verbeek,
Shrawan K. Mishra,
Peter Bencok,
Christoph Schlueter,
Tien-Lin Lee,
Dileep Krishnan,
Jo Verbeeck,
Guus Rijnders,
Gertjan Koster,
Mark S. Golden
Abstract:
We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation…
▽ More
We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation of the magnetic properties. The experiments prove a deterministically-tunable charge transfer process acting in the LaCoO3 within three unit cells of the heterointerface, able to generate full conversion to 3d7 divalent Co, which displays a paramagnetic ground state. The number of LaTiO3 / LaCoO3 interfaces, the thickness of an additional "break" layer between the LaTiO3 and LaCoO3, and the LaCoO3 film thickness itself in tri-layers provide a trio of sensitive control knobs for the charge transfer process, illustrating the efficacy of O2p-band alignment as a guiding principle for property design in complex oxide heterointerfaces.
△ Less
Submitted 11 September, 2019;
originally announced September 2019.
-
Stabilization of the perovskite phase in the Y-Bi-O system by using a BaBiO$_{3}$ buffer layer
Authors:
Rosa Luca Bouwmeester,
Kit de Hond,
Nicolas Gauquelin,
Jo Verbeeck,
Gertjan Koster,
Alexander Brinkman
Abstract:
A topological insulating phase has theoretically been predicted for the thermodynamically unstable perovskite phase of YBiO$_{3}$. Here, it is shown that the crystal structure of the Y-Bi-O system can be controlled by using a BaBiO$_{3}$ buffer layer. The BaBiO$_{3}$ film overcomes the large lattice mismatch of 12% with the SrTiO$_{3}$ substrate by forming a rocksalt structure in between the two p…
▽ More
A topological insulating phase has theoretically been predicted for the thermodynamically unstable perovskite phase of YBiO$_{3}$. Here, it is shown that the crystal structure of the Y-Bi-O system can be controlled by using a BaBiO$_{3}$ buffer layer. The BaBiO$_{3}$ film overcomes the large lattice mismatch of 12% with the SrTiO$_{3}$ substrate by forming a rocksalt structure in between the two perovskite structures. Depositing an YBiO$_{3}$ film directly on a SrTiO$_{3}$ substrate gives a fluorite structure. However, when the Y-Bi-O system is deposited on top of the buffer layer with the correct crystal phase and comparable lattice constant, a single oriented perovskite structure with the expected lattice constants is observed.
△ Less
Submitted 6 March, 2019;
originally announced March 2019.
-
Tailoring Vanadium Dioxide Film Orientation using Nanosheets: A Combined Microscopy, Diffraction, Transport and Soft X-ray in Transmission Study
Authors:
Phu Tran Phong Le,
Kevin Hofhuis,
Abhi Rana,
Mark Huijben,
Hans Hilgenkamp,
G. Rijnders,
A. ten Elshof,
Gertjan Koster,
Nicolas Gauquelin,
Gunnar Lumbeeck,
Christian Schlüßler-Langeheine,
Horia Popescu,
F. Fortuna,
Steef Smit,
Xanthe H. Verbeek,
Georgios Araizi-Kanoutas,
Shrawan Mishra,
Igor Vakivskyi,
Hermann A. Durr,
Mark S. Golden
Abstract:
VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R…
▽ More
VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R and (-402)M1/(002)R by coating the bulk substrates with Ti0.87O2 and NbWO6 nanosheets, respectively, prior to VO2 growth. Temperature dependent X-ray diffraction and automated crystal orientation map** in microprobe TEM mode (ACOM-TEM) characterized the high phase purity, the crystallographic and orientational properties of the VO2 films. Transport measurements and soft X-ray absorption in transmission are used to probe the VO2 metal-insulator transition, showing results of a quality equal to those from epitaxial films on bulk single-crystal substrates. Successful local manipulation of two different VO2 orientations on a single substrate is demonstrated using VO2 grown on lithographically-patterned lines of Ti0.87O2 and NbWO6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet-templated VO2 films for advanced lensless imaging of the metal-insulator transition using coherent soft X-rays is discussed.
△ Less
Submitted 25 January, 2019;
originally announced January 2019.
-
Diluted Oxide Interfaces with Tunable Ground States
Authors:
Yulin Gan,
Dennis Valbjørn Christensen,
Yu Zhang,
Hongrui Zhang,
Krishnan Dileep,
Zhicheng Zhong,
Wei Niu,
Damon James Carrad,
Kion Norrman,
Merlin von Soosten,
Thomas sand Jespersen,
Baogen Shen,
Nicolas Gauquelin,
Johan Verbeeck,
Jirong Sun,
Nini Pryds,
Yunzhong Chen
Abstract:
The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, we report an unforeseen tunability of the phase diagram of LAO/STO by a…
▽ More
The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, we report an unforeseen tunability of the phase diagram of LAO/STO by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-do** level, x, of LaAl1-xMnxO3/STO, the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc= 2.8E13 cm-2, where a peak TSC =255 mK of superconducting transition temperature is observed. Moreover, the LaAl1-xMnxO3 turns ferromagnetic at x >=0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, we achieve reproducibly a same device with both signatures of superconductivity and clear anomalous Hall effect. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices.
△ Less
Submitted 15 January, 2019;
originally announced January 2019.
-
Influence of stoichiometry on interfacial conductance in LaAlO$_3$/SrTiO$_3$ grown by 90$^o$ off-axis sputtering
Authors:
Chunhai Yin,
Dileep Krishnan,
Nicolas Gauquelin,
Jo Verbeeck,
Jan Aarts
Abstract:
We report on the fabrication of conducting interfaces between LaAlO$_3$ and SrTiO$_3$ by 90$^o$ off-axis sputtering in an Ar atmosphere. At a growth pressure of 0.04 mbar the interface is metallic, with a carrier density of the order of $10^{13}$ cm$^{-2}$ at 3 K. By increasing the growth pressure, we observe an increase of the out-of-plane lattice constants of the LaAlO$_3$ films while the in-pla…
▽ More
We report on the fabrication of conducting interfaces between LaAlO$_3$ and SrTiO$_3$ by 90$^o$ off-axis sputtering in an Ar atmosphere. At a growth pressure of 0.04 mbar the interface is metallic, with a carrier density of the order of $10^{13}$ cm$^{-2}$ at 3 K. By increasing the growth pressure, we observe an increase of the out-of-plane lattice constants of the LaAlO$_3$ films while the in-plane lattice constants do not change. Also, the low-temperature sheet resistance increases with increasing growth pressure, leading to an insulating interface when the growth pressure reaches 0.10 mbar. We attribute the structural variations to an increase of the La/Al ratio, which also explains the transition from metallic behavior to insulating behavior of the interfaces. Our research emphasizes the key role of the cation stoichiometry of LaAlO$_3$ in the formation of the conducting interface, and also the control which is furnished by the Ar pressure in the growth process.
△ Less
Submitted 2 November, 2018;
originally announced November 2018.
-
Berry phase engineering at oxide interfaces
Authors:
D. J. Groenendijk,
C. Autieri,
T. C. van Thiel,
W. Brzezicki,
N. Gauquelin,
P. Barone,
K. H. W. van den Bos,
S. van Aert,
J. Verbeeck,
A. Filippetti,
S. Picozzi,
M. Cuoco,
A. D. Caviglia
Abstract:
Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle cha…
▽ More
Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstructions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics.
△ Less
Submitted 12 October, 2018;
originally announced October 2018.
-
Depth-resolved resonant inelastic x-ray scattering at a superconductor/half-metallic ferromagnet interface through standing-wave excitation
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Giacomo Ghiringhelli,
Yingying Peng,
Gabriella Maria De Luca,
Daniele Di Castro,
Davide Betto,
Mathias Gehlmann,
Tom Wijnands,
Mark Huijben,
Julia Meyer-Ilse,
Eric Gullikson,
Jeffrey B. Kortright,
Arturas Vailionis,
Nicolas Gauquelin,
Johan Verbeeck,
Timm Gerber,
Giuseppe Balestrino,
Nicholas B. Brookes,
Lucio Braicovich,
Charles S. Fadley
Abstract:
We demonstrate that combining standing-wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide heterostructures. SW-RIXS has been applied to multilayer heterostructures consisting of a superconductor La$_{1.85}$Sr$_{0.15}$CuO$_{4}$(LSCO) and a half-metallic ferromag…
▽ More
We demonstrate that combining standing-wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide heterostructures. SW-RIXS has been applied to multilayer heterostructures consisting of a superconductor La$_{1.85}$Sr$_{0.15}$CuO$_{4}$(LSCO) and a half-metallic ferromagnet La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO). Easily observable SW effects on the RIXS excitations were found in these LSCO/LSMO multilayers. In addition, we observe different depth distribution of the RIXS excitations. The magnetic excitations are found to arise from the LSCO/LSMO interfaces, and there is also a suggestion that one of the dd excitations comes from the interfaces. SW-RIXS measurements of correlated-oxide and other multilayer heterostructures should provide unique layer-resolved insights concerning their orbital and magnetic excitations, as well as a challenge for RIXS theory to specifically deal with interface effects.
△ Less
Submitted 6 December, 2018; v1 submitted 27 February, 2018;
originally announced February 2018.
-
Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films
Authors:
H. Zhang,
N. Gauquelin,
C. McMahon,
D. G. Hawthorn,
G. A. Botton,
J. Y. T. Wei
Abstract:
It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of $\rm{YBa_2Cu_3O_{7-δ}}$ grown by pulsed laser deposition are annealed at up to…
▽ More
It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of $\rm{YBa_2Cu_3O_{7-δ}}$ grown by pulsed laser deposition are annealed at up to 700 atm O$_2$ and 900$^\circ$C, in conjunction with Cu enrichment by solid-state diffusion. The films show clear formation of $\rm{Y_2Ba_4Cu_7O_{15-δ}}$ and $\rm{Y_2Ba_4Cu_8O_{16}}$ as well as regions of $\rm{YBa_2Cu_5O_{9-δ}}$ and YBa$_2$Cu$_6$O$_{10-δ}$ phases, according to scanning transmission electron microscopy, x-ray diffraction and x-ray absorption spectroscopy. Similarly annealed $\rm{YBa_2Cu_3O_{7-δ}}$ powders show no phase conversion. Our results demonstrate a novel route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.
△ Less
Submitted 27 February, 2018; v1 submitted 29 October, 2017;
originally announced October 2017.
-
Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa$_2$Cu$_3$O$_{7-δ}$ thin films
Authors:
Nicolas Gauquelin,
Hao Zhang,
Guozhen Zhu,
John Y. T. Wei,
Gianluigi A. Botton
Abstract:
We have discovered two novel types of planar defects that appear in heteroepitaxial YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La$_{2/3}$Ca$_{1/3}$MnO$_3$ (LCMO) overlayer, using the combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS…
▽ More
We have discovered two novel types of planar defects that appear in heteroepitaxial YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La$_{2/3}$Ca$_{1/3}$MnO$_3$ (LCMO) overlayer, using the combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) map** for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO$_2$ planes, resulting in non-stoichiometric layer sequences that could directly impact the high-$T_c$ superconductivity.
△ Less
Submitted 29 October, 2017;
originally announced October 2017.
-
Formation of a conducting LaAlO$_3$ / SrTiO$_3$ interface studied by low energy electron reflection during growth
Authors:
A. J. H. van der Torren,
Z. Liao,
C. Xu,
N. Gauquelin,
C. Yin,
J. Aarts,
S. J. van der Molen
Abstract:
The two-dimensional electron gas occurring between the band insulators SrTiO$_3$ and LaAlO$_3$ continues to attract considerable interest, due to the possibility of dynamic control over the carrier density, and the ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations, there a…
▽ More
The two-dimensional electron gas occurring between the band insulators SrTiO$_3$ and LaAlO$_3$ continues to attract considerable interest, due to the possibility of dynamic control over the carrier density, and the ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations, there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO$_3$ layer at the growth temperature (around 800 $^o$C) in oxygen (pressure around $5\times 10^{-5}$ mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in-situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO$_2$-rich surface and a conducting interface; or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.
△ Less
Submitted 8 September, 2017;
originally announced September 2017.
-
Spin-orbit semimetal SrIrO$_3$ in the two-dimensional limit
Authors:
D. J. Groenendijk,
C. Autieri,
J. Girovsky,
M. Carmen Martinez-Velarte,
N. Manca,
G. Mattoni,
A. M. R. V. L. Monteiro,
N. Gauquelin,
J. Verbeeck,
A. F. Otte,
M. Gabay,
S. Picozzi,
A. D. Caviglia
Abstract:
We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by sc…
▽ More
We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by scanning tunneling spectroscopy, showing that 4 unit cells SrIrO$_3$ is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO$_3$ is accompanied by antiferromagnetic order.
△ Less
Submitted 27 June, 2017;
originally announced June 2017.
-
Thickness dependent properties in oxide heterostructures driven by structurally induced metal-oxygen hybridization variations
Authors:
Zhaoliang Liao,
Nicolas Gauquelin,
Robert J. Green,
Sebastian Macke,
Julie Gonnissen,
Sean Thomas,
Zhicheng Zhong,
Lin Li,
Liang Si,
Sandra Van Aert,
Philipp Hansmann,
Karsten Held,
**g Xia,
Johan Verbeeck,
Gustaaf Van Tendeloo,
George A. Sawatzky,
Gertjan Koster,
Mark Huijben,
Guus Rijnders
Abstract:
Thickness driven electronic phase transitions are broadly observed in different types of functional perovskite heterostructures. However, uncertainty remains whether these effects are solely due to spatial confinement, broken symmetry or rather to a change of structure with varying film thickness. Here, we present direct evidence for the relaxation of oxygen 2p and Mn 3d orbital (p-d) hybridizatio…
▽ More
Thickness driven electronic phase transitions are broadly observed in different types of functional perovskite heterostructures. However, uncertainty remains whether these effects are solely due to spatial confinement, broken symmetry or rather to a change of structure with varying film thickness. Here, we present direct evidence for the relaxation of oxygen 2p and Mn 3d orbital (p-d) hybridization coupled to the layer dependent octahedral tilts within a La2/3Sr1/3MnO3 film driven by interfacial octahedral coupling. An enhanced Curie temperature is achieved by reducing the octahedral tilting via interface structure engineering. Atomically resolved lattice, electronic and magnetic structures together with X-ray absorption spectroscopy demonstrate the central role of thickness dependent p-d hybridization in the widely observed dimensionality effects present in correlated oxide heterostructures.
△ Less
Submitted 26 January, 2017;
originally announced January 2017.
-
Epitaxial growth of complex oxides on silicon by enhanced surface diffusion in large area pulsed laser deposition
Authors:
Rik Groenen,
Zhaoliang Liao,
Nicolas Gauquelin,
Roel Hoekstra,
Bart Spanjer,
Merle van Gorsel,
Sam Borkent,
Minh Nguyen,
Laura Vargas-LLona,
Eddy Rodijk,
Cas Damen,
Jo Verbeeck,
Gertjan Koster,
Guus Rijnders
Abstract:
Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large area Pulsed Laser Deposition (PLD) setup. We study and show the results of the effect of an additional SrRuO3 buffer layer on the growth temperature dependent st…
▽ More
Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large area Pulsed Laser Deposition (PLD) setup. We study and show the results of the effect of an additional SrRuO3 buffer layer on the growth temperature dependent structural and magnetic properties of LSMO films. With the introduction of a thin SrRuO3 layer on top of the buffer stack, LSMO films show ferromagnetic behaviour for growth temperatures as low as 250C. We suggest that occurrence of epitaxial crystal growth of LSMO at these low growth temperatures can be understood by an improved surface diffusion, which ensures sufficient intermixing of surface species for formation of the correct phase. This intermixing is necessary because the full plume is collected on the 4" wafer resulting in a compositional varying flux of species on the wafer, in contrast to small scale experiments.
△ Less
Submitted 20 July, 2016;
originally announced July 2016.
-
Real-space map** of electronic orbitals
Authors:
Stefan Löffler,
Matthieu Bugnet,
Nicolas Gauquelin,
Sorin Lazar,
Elias Assmann,
Karsten Held,
Gianluigi A. Botton,
Peter Schattschneider
Abstract:
Electronic states are responsible for most material properties, including chemical bonds, electrical and thermal conductivity, as well as optical and magnetic properties. Experimentally, however, they remain mostly elusive. Here, we report the real-space map** of selected transitions between p and d states on the Ångström scale in bulk rutile (TiO2) using electron energy-loss spectrometry (EELS)…
▽ More
Electronic states are responsible for most material properties, including chemical bonds, electrical and thermal conductivity, as well as optical and magnetic properties. Experimentally, however, they remain mostly elusive. Here, we report the real-space map** of selected transitions between p and d states on the Ångström scale in bulk rutile (TiO2) using electron energy-loss spectrometry (EELS), revealing information on individual bonds between atoms. On the one hand, this enables the experimental verification of theoretical predictions about electronic states. On the other hand, it paves the way for directly investigating electronic states under conditions that are at the limit of the current capabilities of numerical simulations such as, e.g., the electronic states at defects, interfaces, and quantum dots.
△ Less
Submitted 27 June, 2016;
originally announced June 2016.
-
Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation do**
Authors:
Y. Z. Chen,
F. Trier,
T. Wijnands,
R. J. Green,
N. Gauquelin,
R. Egoavil,
D. V. Christensen,
G. Koster,
M. Huijben,
N. Bovet,
S. Macke,
F. He,
R. Sutarto,
N. H. Andersen,
G. E. D. K. Prawiroatmodjo,
T. S. Jespersen,
J. A. Sulpizio,
M. Honig,
S. Linderoth,
S. Ilani,
J. Verbeeck,
G. Van Tendeloo,
G. Rijnders,
G. A. Sawatzky,
N. Pryds
Abstract:
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, supercon…
▽ More
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation do** of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.
△ Less
Submitted 22 April, 2015;
originally announced April 2015.
-
Atomic resolution map** of phonon excitations in STEM-EELS experiments
Authors:
R. Egoavil,
N. Gauquelin,
G. T. Martinez,
S. Van Aert,
G. Van Tendeloo,
J. Verbeeck
Abstract:
Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberrationcorrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalised due to the long range interaction of the charged accelerated electrons with the el…
▽ More
Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberrationcorrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalised due to the long range interaction of the charged accelerated electrons with the electrons in a sample. This has made several scientists question the value of combined high spatial and energy resolution for map** interband transitions and possibly phonon excitation in crystals. In this paper we demonstrate experimentally that atomic resolution information is indeed available at very low energy losses around 100 meV expressed as a modulation of the broadening of the zero loss peak. Careful data analysis allows us to get a glimpse of what are likely phonon excitations with both an energy loss and gain part. These experiments confirm recent theoretical predictions on the strong localisation of phonon excitations as opposed to electronic excitations and show that a combination of atomic resolution and recent developments in increased energy resolution will offer great benefit for map** phonon modes in real space.
△ Less
Submitted 6 March, 2014;
originally announced March 2014.
-
Attenuation of superconductivity in manganite/cuprate heterostructures by epitaxially-induced CuO intergrowths
Authors:
H. Zhang,
N. Gauquelin,
G. A. Botton,
J. Y. T. Wei
Abstract:
We examine the effect of CuO intergrowths on the superconductivity in epitaxial La_{2/3}Ca_{1/3}MnO_3/YBa_2Cu_3O_{7-δ} (LCMO/YBCO) thin-film heterostructures. Scanning transmission electron microscopy on bilayer LCMO/YBCO thin films revealed double CuO-chain intergrowths which form regions with the 247 lattice structure in the YBCO layer. These nanoscale 247 regions do not appear in x-ray diffract…
▽ More
We examine the effect of CuO intergrowths on the superconductivity in epitaxial La_{2/3}Ca_{1/3}MnO_3/YBa_2Cu_3O_{7-δ} (LCMO/YBCO) thin-film heterostructures. Scanning transmission electron microscopy on bilayer LCMO/YBCO thin films revealed double CuO-chain intergrowths which form regions with the 247 lattice structure in the YBCO layer. These nanoscale 247 regions do not appear in x-ray diffraction, but can physically account for the reduced critical temperature Tc of bilayer thin films relative to unilayer films with the same YBCO thickness, at least down to ~25 nm. We attribute the CuO intergrowths to the bilayer heteroepitaxial mismatch and the Tc reduction to the generally lower Tc seen in bulk 247 samples. These epitaxially-induced CuO intergrowths provide a microstructural mechanism for the attenuation of superconductivity in LCMO/YBCO heterostructures.
△ Less
Submitted 7 August, 2013;
originally announced August 2013.
