-
Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
Authors:
D. Sztenkiel,
K. Gas,
N. Gonzalez Szwacki,
M. Foltyn,
C. Sliwa,
T. Wojciechowski,
J. Z. Domagala,
D. Hommel,
M. Sawicki,
T. Dietl
Abstract:
We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we…
▽ More
We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{1-x}$Te$_3$, in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature.
△ Less
Submitted 19 June, 2024;
originally announced June 2024.
-
Candidate platform for studying flatband-induced spin-triplet superconductivity
Authors:
P. Sidorczak,
W. Wolkanowicz,
A. Kaleta,
M. Wójcik,
S. Gierałtowska,
K. Gas,
T. Płociński,
R. Minikayev,
S. Kret,
M. Sawicki,
T. Wojtowicz,
D. Wasik,
M. Gryglas-Borysiewicz,
K. Dybko
Abstract:
This paper explores the potential for spin-triplet superconductivity in molecular beam epitaxy-grown IV-VI semiconductor superlattices. The findings present compelling evidence for spin-triplet pairing in PbTe/SnTe by the method of soft point-contact spectroscopy and spin-polarised point-contact spectroscopy. The experimental data are understood with the Anderson-Brinkman-Morel model of p-wave ele…
▽ More
This paper explores the potential for spin-triplet superconductivity in molecular beam epitaxy-grown IV-VI semiconductor superlattices. The findings present compelling evidence for spin-triplet pairing in PbTe/SnTe by the method of soft point-contact spectroscopy and spin-polarised point-contact spectroscopy. The experimental data are understood with the Anderson-Brinkman-Morel model of p-wave electron pairing. It is pointed out that emergent superconductivity can have its origin in topological flat bands obtained due to internal stresses of the sample similar to twisted layer graphene.
△ Less
Submitted 6 June, 2024;
originally announced June 2024.
-
Coexistence of Antiferromagnetic Cubic and Ferromagnetic Tetragonal Polymorphs in Epitaxial CuMnSb
Authors:
Anna Ciechan,
Piotr Dluzewski,
Slawomir Kret,
Katarzyna Gas,
Lukas Scheffler,
Charles Gould,
Johannes Kleinlein,
Maciej Sawicki,
Laurens Molenkamp,
Piotr Boguslawski
Abstract:
High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The dominant $α$~phase is half-Heusler cubic antiferromagnet with the Néel temperature of 62~K, the equilibrium structure of bulk CuMnSb. The secondary phase is its…
▽ More
High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The dominant $α$~phase is half-Heusler cubic antiferromagnet with the Néel temperature of 62~K, the equilibrium structure of bulk CuMnSb. The secondary phase is its ferromagnetic tetragonal $β$ polymorph with the Curie temperature of about 100~K. First principles calculations provide a consistent interpretation of experiment, since (i) total energy of $β$--CuMnSb is higher than that of $α$--CuMnSb only by 0.12~eV per formula unit, which allows for epitaxial stabilization of this phase, (ii) the metallic character of $β$--CuMnSb favors the Ruderman-Kittel-Kasuya-Yoshida ferromagnetic coupling, and (iii) the calculated effective Curie-Weiss magnetic moment of Mn ions in both phases is about $5.5~μ_\mathrm{B}$, favorably close to the measured value. Calculated properties of all point native defects indicate that the most likely to occur are $\mathrm{Mn}_\mathrm{Cu}$ antisites. They affect magnetic properties of epilayers, but they cannot induce the ferromagnetic order in CuMnSb. Combined, the findings highlight a practical route towards fabrication of functional materials in which coexisting polymorphs provide complementing functionalities in one host.
△ Less
Submitted 29 May, 2024;
originally announced May 2024.
-
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Authors:
J. Aaron Mendoza-Rodarte,
Katarzyna Gas,
Manuel Herrera-Zaldívar,
Detlef Hommel,
Maciej Sawicki,
Marcos H. D. Guimarães
Abstract:
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of develo** advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a nee…
▽ More
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of develo** advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a need to investigate the spintronic parameters that characterize interfaces within these systems. Here, we perform spin Hall magnetoresistance (SMR) measurements to evaluate the spin transfer at a Pt/(Ga,Mn)N interface. We determine the transparency of the interface through the estimation of the real part of the spin mixing conductance finding $G_r = 2.6\times 10^{14} \, Ω^{-1} m^{-2}$, comparable to state-of-the-art yttrium iron garnet (YIG)/Pt interfaces. Moreover, the magnetic ordering probed by SMR above the (Ga,Mn)N Curie temperature TC provides a broader temperature range for the efficient generation and detection of spin currents, relaxing the conditions for this material to be applied in new spintronic devices.
△ Less
Submitted 14 May, 2024;
originally announced May 2024.
-
Coexistence of Anomalous Hall Effect and Weak Net Magnetization in Collinear Antiferromagnet MnTe
Authors:
K. P. Kluczyk,
K. Gas,
M. J. Grzybowski,
P. Skupiński,
M. A. Borysiewicz,
T. Fąs,
J. Suffczyński,
J. Z. Domagala,
K. Grasza,
A. Mycielski,
M. Baj,
K. H. Ahn,
K. Výborný,
M. Sawicki,
M. Gryglas-Borysiewicz
Abstract:
Anomalous Hall effect (AHE) plays important role in the rapidly develo** field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrat…
▽ More
Anomalous Hall effect (AHE) plays important role in the rapidly develo** field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrate that bulk form of MnTe exhibits small but detectable magnetic moment correlating with hysteretic behaviour of the AHE. We formulate a phenomenological model which explains how this feature allows to create a disbalance between states with opposite Néel vector and prevent the AHE signal from averaging out to zero. Moreover, we show how the dependence of AHE on the Néel vector arises on microscopical level and highlight the differences in Berry curvature between magnetically compensated and uncompensated systems.
△ Less
Submitted 13 October, 2023;
originally announced October 2023.
-
Wurtzite vs rock-salt MnSe epitaxy: electronic and altermagnetic properties
Authors:
Michał J. Grzybowski,
Carmine Autieri,
Jarosław Domagała,
Cezary Krasucki,
Anna Kaleta,
Sławomir Kret,
Katarzyna Gas,
Maciej Sawicki,
Rafał Bożek,
Jan Suffczyński,
Wojciech Pacuski
Abstract:
Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits…
▽ More
Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature. It is the first material from such space group identified to possess altermagnetic properties. Furthermore, we demonstrate experimentally through structural characterization techniques that it is possible to obtain thin films of both the intriguing wurtzite phase of MnSe and the more common rock-salt MnSe using molecular beam epitaxy on GaAs substrates. The choice of buffer layers plays a crucial role in determining the resulting phase and consequently extends the array of materials available for the physics of altermagnetism.
△ Less
Submitted 13 September, 2023; v1 submitted 12 September, 2023;
originally announced September 2023.
-
A Simplified Method of the Assessment of Magnetic Anisotropy of Commonly Used Sapphire Substrates in SQUID Magnetometers
Authors:
Katarzyna Gas,
Maciej Sawicki
Abstract:
Solid state wafers are indispensable components in material science as substrates for epitaxial homo- or hetero-structures or carriers for two-dimensional materials. However, a reliable determination of magnetic properties of nanomaterials in volume magnetometry is frequently affected by unexpectedly rich magnetism of these substrates, including significant magnetic anisotropy. Here, we describe a…
▽ More
Solid state wafers are indispensable components in material science as substrates for epitaxial homo- or hetero-structures or carriers for two-dimensional materials. However, a reliable determination of magnetic properties of nanomaterials in volume magnetometry is frequently affected by unexpectedly rich magnetism of these substrates, including significant magnetic anisotropy. Here, we describe a simplified experimental routine of magnetic anisotropy assessment, which we exemplify and validate for epi-ready sapphire wafers from various sources. Both the strength and the sign of magnetic anisotropy is obtained from carefully designed temperature dependent measurements, which mitigate all known pitfalls of volume SQUID magnetometry and are substantially faster than traditional approaches. Our measurements indicate that in all the samples two types of net paramagnetic contributions coexists with diamagnetism. The first one can be as strong as 10% of the base diamagnetism of sapphire [-3.7(1) x 10-7 emu/gOe], and, when exceeds 2% mark, it exhibits pronounced magnetic anisotropy with the easy axis oriented perpendicularly to the face of c-plane wafers. The other is much weaker but exhibit ferromagnetic-like appearance. These findings form an important message that non-standard magnetism of common substrates can significantly influence the results of precise magnetometry of nanoscale materials and its existence must be taken for granted by both industry and academia.
△ Less
Submitted 24 November, 2022;
originally announced November 2022.
-
Bulk-like magnetic properties in MBE-grown unstrained, antiferromagnetic CuMnSb
Authors:
L. Scheffler,
J. Werther,
K. Gas,
C. Schumacher,
C. Gould,
M. Sawicki,
J. Kleinlein,
L. W. Molenkamp
Abstract:
A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes are varied to produce material with different elemental compositions. It is found that the layers grown under a relative Mn to Sb flux ratio of $Φ_{\text{Mn}}$/…
▽ More
A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes are varied to produce material with different elemental compositions. It is found that the layers grown under a relative Mn to Sb flux ratio of $Φ_{\text{Mn}}$/$Φ_{\text{Sb}}=1.24\pm0.02$ are closest to the stoichiometric composition, for which the Néel temperature ($T_\text{N}$) attains its maximum values. Mn-related structural defects are believed to be the driving contribution to changes in the vertical lattice parameter. Having established the optimum growth conditions, a second set of samples with CuMnSb layer thickness varied from 5 to 510 nm is fabricated. We show that for sufficiently large thicknesses, the magnetic characteristics ($T_\text{N}\simeq62$ K, Curie-Weiss temperature $Θ_\text{CW} = -100$ K) of the stoichiometric layers do correspond to the parameters reported for bulk samples. On the other hand, we observe a reduction of $T_\text{N}$ as a function of the CuMnSb thickness for our thinnest layers. All findings reported here are of particular relevance for studies aiming at the demonstration of Néel vector switching and detection in this noncentrosymmetric antiferromagnet, which have been recently proposed.
△ Less
Submitted 27 June, 2022;
originally announced June 2022.
-
In Situ Compensation Method for Precise Integral SQUID Magnetometry of Miniscule Biological, Chemical, and Powder Specimens Requiring the Use of Capsules
Authors:
Katarzyna Gas,
Maciej Sawicki
Abstract:
Steadily growing interest in magnetic characterization of organic compounds for therapeutic purposes or of other irregularly shaped specimens calls for refinements of experimental methodology to satisfy experimental challenges. Encapsulation in capsules remains the method of choice, but its applicability in precise magnetometry is limited. This is particularly true for minute specimens in the sing…
▽ More
Steadily growing interest in magnetic characterization of organic compounds for therapeutic purposes or of other irregularly shaped specimens calls for refinements of experimental methodology to satisfy experimental challenges. Encapsulation in capsules remains the method of choice, but its applicability in precise magnetometry is limited. This is particularly true for minute specimens in the single milligram range as they are outweighed by the capsules and are subject to large alignment errors. We present here a completely new experimental methodology that permits 30-fold in situ reduction of the signal of capsules by substantially restoring the symmetry of the sample holder that is otherwise broken by the presence of the capsule. In practical terms it means that the standard 30 mg capsule is seen by the magnetometer as approximately a 1 mg object, effectively opening the window for precise magnetometry of single milligram specimens. The method is shown to work down to 1.8 K and in the whole range of the magnetic fields. The method is demonstrated and validated using the reciprocal space option of MPMS-SQUID magnetometers; however, it can be easily incorporated in any magnetometer that can accommodate straw sample holders (i.e., the VSM-SQUID). Importantly, the improved sensitivity is accomplished relying only on the standard accessories and data reduction method provided by the SQUID manufacturer, eliminating the need for elaborate raw data manipulations.
△ Less
Submitted 9 January, 2022; v1 submitted 30 December, 2021;
originally announced December 2021.
-
Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN
Authors:
Katarzyna Gas,
Gerd Kunert,
Piotr Dluzewski,
Rafal Jakiela,
Detlef Hommel,
Maciej Sawicki
Abstract:
Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the indirect co-do** by holes from the cladding layers can alter the spin-spin interaction in (Ga,Mn)N. The four investigated structures, differing with the Mg do** level, are carefully characterized at the nanoscale by…
▽ More
Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the indirect co-do** by holes from the cladding layers can alter the spin-spin interaction in (Ga,Mn)N. The four investigated structures, differing with the Mg do** level, are carefully characterized at the nanoscale by HRTEM, EDX, and by SIMS. HRTEM decisively excluded a presence of foreign Mn-rich phases. The structures, up to medium Mg do**, show no Mg over-do** effects. Magnetic studies of these structures are aided by the employment of a dedicated experimental approach of the in situ compensation of the magnetic contribution from the substrate, allowing up to about fifty-fold reduction of this contribution. This technique, dedicated to these structures, simultaneously provides a tenfold reduction of temporal instabilities of the magnetometric unit and lowers the experimental jitter to merely $5 \times 10^{-7}$~emu at 70~kOe, vastly increasing the precision and the credibility of the results of the standard integral SQUID magnetometry in high magnetic fields. The magnetic characteristics of the trilayers structures established here prove identical with the already known properties of the thick (Ga,Mn)N single layers, namely (i) the low temperature ferromagnetism among Mn$^{3+}$ ions driven by superexchange and (ii) purely paramagnetic response at higher temperatures. The possible cause of the lack of any effects brought about by the adjacent Mg-do** is a presence of residual Mn in the cladding layers, resulting in the deactivation of the p-type do** intended there. This finding points out that a more intensive technological effort has to be exerted to promote the co-do**-driven carrier-mediated ferromagnetic coupling in Mn-enriched GaN, especially at elevated temperatures.
△ Less
Submitted 7 February, 2021; v1 submitted 24 January, 2021;
originally announced January 2021.
-
Magnetic properties of wurtzite (Ga,Mn)As
Authors:
Katarzyna Gas,
Janusz Sadowski,
Maciej Sawicki
Abstract:
Here we report on detailed studies of the magnetic properties of the wurtzite (Ga,Mn)As cylindrical shells. Ga$_{0.94}$Mn$_{0.06}$As shells have been grown by molecular beam epitaxy at low temperature as a part of multishell cylinders overgrown on wurtzite (Ga,In)As nanowires cores, synthesized on GaAs (111)B substrates. Our studies clearly indicate the presence of a low temperature ferromagnetic…
▽ More
Here we report on detailed studies of the magnetic properties of the wurtzite (Ga,Mn)As cylindrical shells. Ga$_{0.94}$Mn$_{0.06}$As shells have been grown by molecular beam epitaxy at low temperature as a part of multishell cylinders overgrown on wurtzite (Ga,In)As nanowires cores, synthesized on GaAs (111)B substrates. Our studies clearly indicate the presence of a low temperature ferromagnetic coupling, which despite a reasonably high Mn contents of 6\% is limited only to below 30~K. A set of dedicated measurements shows that despite a high structural quality of the material the magnetic order has a granular form, which gives rise to the dynamical slow-down characteristic to blocked superparamagnets. The lack of the long range order has been assigned to a very low hole density, caused primarily by numerous compensation donors, arsenic antisites, formed in the material due to a specific geometry of the growth of the shells on the nanowire template. The associated electrostatic disorder has formed a patchwork of spontaneously magnetized (macrospin) and nonmagnetic (paramagnetic) volumes in the material. Using high field results it has been evaluated that the total volume taken by the macrospins constitute about 2/3 of the volume of the (Ga,Mn)As whereas in the remaining 1/3 only paramagnetic Mn ions reside. By establishing the number of the uncoupled ions the two contributions were separated. The Arrott plot method applied to the superparamagnetic part yielded the first experimental assessment of the magnitude of the spin-spin coupling temperature within the macrospins in (Ga,Mn)As, $T_{\mathrm{C}}=28$~K. In a broader view our results constitute an important contribution to the still ongoing dispute on the true and the dominant form(s) of the magnetism in this model dilute ferromagnetic semiconductor.
△ Less
Submitted 18 January, 2021;
originally announced January 2021.
-
Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr
Authors:
Katarzyna Gas,
Aleksandra Krolicka,
Krzysztof Dybko,
Piotr Nowicki,
Zeinab Khosravizadeh,
Tomasz Story,
Maciej Sawicki
Abstract:
In this paper we report on detailed temperature and magnetic field dependence of m agnetization of IV-VI semiconductor PbTe doped with mixed valence transition metal Cr$^{2+/3+}$. The material is studied solely by an integral superconducting quantum interference device magnetometer in order to quantitatively determine the contribution of single substitutional Cr$^{3+}$ as well as of various Cr-Te…
▽ More
In this paper we report on detailed temperature and magnetic field dependence of m agnetization of IV-VI semiconductor PbTe doped with mixed valence transition metal Cr$^{2+/3+}$. The material is studied solely by an integral superconducting quantum interference device magnetometer in order to quantitatively determine the contribution of single substitutional Cr$^{3+}$ as well as of various Cr-Te magnetic nanocrystals, including their identification. The applied experimental procedure reveals the presence of about $10^{19}$~cm$^{-3}$ paramagnetic Cr$^{3+}$ ions formed via self-ionization of Cr$^{2+}$ resonant donors. These are known to improve the thermoelectric figure of merit parameter zT of this semiconductor. The magnetic finding excellently agrees with previous Hall effect studies thus providing a new experimental support for the proposed electronic structure model of PbTe:Cr system with resonant Cr$^{2+/3+}$ state located (at low temperatures) about 100 meV above the bottom of the conduction band. Below room temperature a ferromagnetic-like signal points to the presence of Cr-rich nanocrystalline precipitates. Two most likely candidates, namely: Cr$_2$Te$_3$ and Cr$_5$Te$_8$ are identified upon dedicated temperature cycling of the sample at the remnant state. As an ensemble, the nanocrystals exhibits (blocked) superparamagnetic properties. The magnetic susceptibility of both n- and p-type PbTe in the temperature range $100 < T < 400$~K has been established. These magnitudes are essential in proper accounting for the high temperature magnetic susceptibility of PbTe:Cr.
△ Less
Submitted 2 June, 2021; v1 submitted 14 January, 2021;
originally announced January 2021.
-
Unravelling the Local Crystallographic Structure of Ferromagnetic Ga$_y$Fe$_{4-y}$N Nanocrystals Embedded in GaN
Authors:
A. Navarro-Quezada,
K. Gas,
A. Spindlberger,
F. Karimi,
M. Sawicki,
G. Ciatto,
A. Bonanni
Abstract:
In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, the presence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous x-ray diffraction and diffraction anomalous fine structure, the local structure of Ga in self-assembled face-centered cubic (fcc) Ga$_y$Fe$_{4-y}$N nanocrystals embedded in wurtzite GaN t…
▽ More
In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, the presence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous x-ray diffraction and diffraction anomalous fine structure, the local structure of Ga in self-assembled face-centered cubic (fcc) Ga$_y$Fe$_{4-y}$N nanocrystals embedded in wurtzite GaN thin layers is investigated in order to shed light onto the correlation between fabrication parameters, local structural arrangement and overall magnetic properties of the material system. It is found, that by adjusting the growth parameters and thus, the crystallographic surroundings, the Ga atoms can be induced to incorporate into 3$c$ positions at the faces of the fcc crystal lattice, reaching a maximum occupancy of 30\%. The magnetic response of the embedded nanocrystals is ferromagnetic with Curie temperature increasing from 450\,K to 500\,K with the Ga occupation. These results demonstrate the outstanding potential of the employed experimental protocol for unravelling the local structure of magnetic multi-phase systems, even when embedded in a matrix containing the same element under investigation.
△ Less
Submitted 3 November, 2020;
originally announced November 2020.
-
Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb
Authors:
Lukas Scheffler,
Katarzyna Gas,
Sanjib Banik,
Martin Kamp,
Jonas Knobel,
Haicheng Lin,
Claus Schumacher,
Charles Gould,
Maciej Sawicki,
Johannes Kleinlein,
Laurens W. Molenkamp
Abstract:
We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electric…
▽ More
We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of $62~\text{K}$, a Curie-Weiss temperature of $-65~\text{K}$ and an effective moment of $5.9~μ_{\text{B}}/\text{f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~\text{K}$ of $35~μΩ\cdot \text{cm}$.
△ Less
Submitted 1 September, 2020;
originally announced September 2020.
-
Crystal field model simulations of magnetic response of pairs, triplets and quartets of Mn$^{3+}$ ions in GaN
Authors:
D. Sztenkiel,
K. Gas,
J. Z. Domagala,
D. Hommel,
M. Sawicki
Abstract:
A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentrations, $x \lesssim 0.01$, the paramagnetic properties of this material were successfully described using a single ion crystal field model approach. In…
▽ More
A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentrations, $x \lesssim 0.01$, the paramagnetic properties of this material were successfully described using a single ion crystal field model approach. In order to obtain the description of magnetization in (Ga,Mn)N in the presence of interacting magnetic centers, we extend the previous model of a single substitutional Mn$^{3+}$ ion in GaN by considering pairs, triplets and quartets of Mn$^{3+}$ ions coupled by a ferromagnetic superexchange interaction. Using this approach we investigate how the magnetic properties, particularly the magnitude of the uniaxial anisotropy field, change as the number of magnetic Mn$^{3+}$ ions in a given cluster increases from 1 to 4. Our simulations are then exploited in explaining experimental magnetic properties of Ga$_{1-x}$Mn$_x$N with $x \cong 0.03$, where the presence of small magnetic clusters gains in significance. As a result the approximate lower and upper limits for the values of exchange couplings between Mn$^{3+}$ ions in GaN, being in nearest neighbors $J_{\mathrm{nn}}$ and next nearest neighbors $J_{\mathrm{nnn}}$ positions, respectively, are established.
△ Less
Submitted 1 December, 2020; v1 submitted 23 June, 2020;
originally announced June 2020.
-
Anomalous Hall Effect in Bismuth
Authors:
Bruno Camargo,
Piort Gierlowski,
Andrei Alaferdov,
Iraida Demchenko,
Maciej Sawicki,
Katarzyna Gas,
Yakov Kopelevich
Abstract:
We report the occurrence of ferromagnetic-like anomalous Hall effect (AHE) below $30$ mT in bismuth single and policrystals. The signatures of ferromagnetism in transport are not corroborated in magnetization measurements, thus suggesting the induction of non-intrinsic magnetism at surfaces and grain boundaries in bismuth. The suppression of the AHE with the increase of magnetic field and temperat…
▽ More
We report the occurrence of ferromagnetic-like anomalous Hall effect (AHE) below $30$ mT in bismuth single and policrystals. The signatures of ferromagnetism in transport are not corroborated in magnetization measurements, thus suggesting the induction of non-intrinsic magnetism at surfaces and grain boundaries in bismuth. The suppression of the AHE with the increase of magnetic field and temperature coincides with previous reports of superconductivity in Bi, suggesting an interplay between the two phenomena.
△ Less
Submitted 2 March, 2021; v1 submitted 3 February, 2020;
originally announced February 2020.
-
Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe$_y$N Nanocrystals Embedded in GaN
Authors:
A. Navarro-Quezada,
K. Gas,
T. Truglas,
V. Bauernfeind,
M. Matzer,
D. Kreil,
A. Ney,
H. Groiss,
M. Sawicki,
A. Bonanni
Abstract:
Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$δ$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the format…
▽ More
Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$δ$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\varepsilon$-Fe$_3$N NCs takes place. Already at an Al concentration $x_\mathrm{Al}$\,$\approx$\,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals in the layer on the $x_\mathrm{Al} = 0\%$ buffer lies in-plane, the easy axis of the $\varepsilon$-Fe$_3$N NCs in all samples with Al$_x$Ga$_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.
△ Less
Submitted 24 July, 2020; v1 submitted 21 January, 2020;
originally announced January 2020.
-
Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
Authors:
M. Wang,
C. Andrews,
S. Reimers,
O. J. Amin,
P. Wadley,
R. P. Campion,
S. F. Poole,
J. Felton,
K. W. Edmonds,
B. L. Gallagher,
A. W. Rushforth,
O. Makarovsky,
K. Gas,
M. Sawicki,
D. Kriegner,
J. Zubac,
K. Olejnik,
V. Novak,
T. Jungwirth,
M. Shahrokhvand,
U. Zeitler,
S. S. Dhesi,
F. Maccherozzi
Abstract:
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b…
▽ More
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.
△ Less
Submitted 21 June, 2021; v1 submitted 27 November, 2019;
originally announced November 2019.
-
Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers
Authors:
Katarzyna Gas,
Detlef Hommel,
Maciej Sawicki
Abstract:
Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution and the absolute values of Mn concentration x. We report on resonantly enhanced UV Raman scattering studies of high quality Ga1-xMnxN layers grown on GaN templated sapphire…
▽ More
Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution and the absolute values of Mn concentration x. We report on resonantly enhanced UV Raman scattering studies of high quality Ga1-xMnxN layers grown on GaN templated sapphire by molecular beam epitaxy with 4 < x < 9%. The main advantage of the UV excitation is the restriction of the light penetration depth to nearly a hundred nanometers, eliminating signal from the GaN buffer. Under this conditions we determine the dependence of the 1LO phonon frequency on x, what allows for a fine map** of its lateral distribution over the entire surface of the samples. Our Raman scanning clearly confirms substantial lateral distribution of Mn atoms across the layer, which is radial with respect to its center. From the established distributions in two deliberately chosen layers the magnitude of the optimal growth temperature for most efficient Mn atoms incorporation in epitaxial GaN has been confirmed. It is shown that the combination of the 1LO line width and its energy provides assessment of the crystalline quality of the investigated layers.
△ Less
Submitted 7 November, 2019;
originally announced November 2019.
-
Enhanced ferromagnetism in cylindrically confined MnAs nanocrystals embedded in wurtzite GaAs nanowire shells
Authors:
Anna Kaleta,
Slawomir Kret,
Katarzyna Gas,
Boguslawa Kurowska,
Serhii B. Kryvyi,
Bogdan Rutkowski,
Nevill Gonzalez Szwacki,
Maciej Sawicki,
Janusz Sadowski
Abstract:
Nearly 30% increase of the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a hexagonal to orthorhombic structural phase transition, which in the bulk MnAs is combined with the magnetic one. This effect results in a remarkable shift of the mag…
▽ More
Nearly 30% increase of the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a hexagonal to orthorhombic structural phase transition, which in the bulk MnAs is combined with the magnetic one. This effect results in a remarkable shift of the magneto-structural phase transition temperature from 313 K in the bulk MnAs to above 400 K in the tensely strained MnAs nanocrystals. This finding is corroborated by the state of the art transmission electron microscopy, sensitive magnetometry and the first-principles calculations. The effect relies in defining a nanotube geometry of molecular beam epitaxy grown core-multishell wurtzite (Ga,In)As/(Ga,Al)As/(Ga,Mn)As/GaAs nanowires where the MnAs nanocrystals are formed during the thermal-treatment-induced phase separation of wurtzite (Ga,Mn)As into the GaAs:MnAs granular system. Such a unique combination of two types of hexagonal lattices provides possibility of attaining quasi-hydrostatic tensile strain in MnAs (impossible otherwise), leading to the substantial ferromagnetic phase transition temperature increase in this compound.
△ Less
Submitted 14 October, 2019;
originally announced October 2019.
-
Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
Authors:
Karolina Kalbarczyk,
Krzysztof Dybko,
Katarzyna Gas,
Dariusz Sztenkiel,
Marek Foltyn,
Magdalena Majewicz,
Piotr Nowicki,
Elżbieta Łusakowska,
Detlef Hommel,
Maciej Sawicki
Abstract:
Schottky barrier height and the ideality factor $η$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10M$Ω$ resistances already at room temperature are indicative that a nearly conductive-dislocation-free elec…
▽ More
Schottky barrier height and the ideality factor $η$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10M$Ω$ resistances already at room temperature are indicative that a nearly conductive-dislocation-free electrical properties are achieved. The analysis of temperature dependence of the forward bias I-V characteristics in the frame of the thermionic emission model yields Ti-(Ga,Mn)N Schottky barrier height to be slightly lower but close in character to other metal/GaN junctions. However, the large magnitudes of the ideality factor $η$>1.5 for T$\leqslant$300K, point to a sizable current blocking in the structure. While it remains to be seen whether it is due to the presence of (Ga,Mn)N barrier or due to other factors which reduce the effective area of the junction, an existence of a substantial serial resistance may hold the key to explain similar observations in other devices of a corresponding structure and technological relevance.
△ Less
Submitted 23 July, 2019;
originally announced July 2019.
-
Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals
Authors:
A. Navarro-Quezada,
M. Aiglinger,
B. Faina,
K. Gas,
M. Matzer,
Tian Li,
R. Adhikari,
M. Sawicki,
A. Bonanni
Abstract:
The magnetotransport in phase-separated (Ga,Fe)N containing $γ$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hoppin…
▽ More
The magnetotransport in phase-separated (Ga,Fe)N containing $γ$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hop** at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields $<$1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for $γ$'-Fe$_4$N thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.
△ Less
Submitted 24 September, 2018;
originally announced September 2018.
-
Diffusion of Mn in gallium nitride: Experiment and modelling
Authors:
Rafal Jakiela,
Katarzyna Gas,
Maciej Sawicki,
Adam Barcz
Abstract:
The control over the structural homogeneity is of paramount importance for ternary nitride compounds - the second most important semiconducting material-class after Si, due to its unrivalled applicability in optoelectronics, and high power/high frequency electronics. Therefore it is timely to investigate possible mechanisms influencing the crystallographic constitution of the material. In this wor…
▽ More
The control over the structural homogeneity is of paramount importance for ternary nitride compounds - the second most important semiconducting material-class after Si, due to its unrivalled applicability in optoelectronics, and high power/high frequency electronics. Therefore it is timely to investigate possible mechanisms influencing the crystallographic constitution of the material. In this work the diffusion mechanism of manganese in gallium nitride is investigated in two types of epilayers: Mn implanted metalorganic vapour phase epitaxy grown GaN and (Ga,Mn)N solid solution grown by molecular beam epitaxy. The extent of the Mn diffusion is established by secondary ion mass spectrometry. Analysis of the Mn profiles in the implanted samples in the frame of the infinite source diffusion led to the establishment for the first time of the pre-exponential factor DO = 2x10-4 cm2/s and diffusion activation energy EA = 1.8 eV describing the diffusion coefficient of Mn in GaN. Modelling of the out-diffusion of Mn from (Ga,Mn)N layers based on these values in turn allows to provide an explanation of the origin of the ubiquitously observed near-the-surface sizable depletion of Mn in (Ga,Mn)N, resulting from the blocking of the Mn out-diffusion by Mn-oxide and the correspondingly formed space-charge layer on the surface.
△ Less
Submitted 10 September, 2018;
originally announced September 2018.
-
In situ compensation method for high-precision and high-sensitivity integral magnetometry
Authors:
Katarzyna Gas,
Maciej Sawicki
Abstract:
An ongoing process of miniaturization of spintronics and magnetic-films-based devices, as well as a growing necessity for basic material research place stringent requirements for sensitive and accurate magnetometric measurements of minute magnetic constituencies deposited on large magnetically responsive carriers. However, the most popular multipurpose commercial superconducting quantum interferen…
▽ More
An ongoing process of miniaturization of spintronics and magnetic-films-based devices, as well as a growing necessity for basic material research place stringent requirements for sensitive and accurate magnetometric measurements of minute magnetic constituencies deposited on large magnetically responsive carriers. However, the most popular multipurpose commercial superconducting quantum interference device (SQUID) magnetometers are not object-selective probes, so the sought signal is usually buried in the magnetic response of the carrier, contaminated by signals from the sample support, system instabilities and additionally degraded by an inadequate data reduction. In this report a comprehensive method based on the in situ magnetic compensation for mitigating all these weak elements of SQUID-based magnetometry is presented. Practical solutions and proper expressions to evaluate the final outcome of the investigations are given. Their universal form allows to employ the suggested design in investigations of a broad range of specimens of different sizes, shapes and compositions. The method does not require any extensive numerical modelling, it relies only on the data taken from the standard magnetometer output. The solution can be straightforwardly implemented in every field where magnetic investigations are of a prime importance, including in particular emerging new fields of topological insulators, 3D-Dirac semimetals and 2D-materials.
△ Less
Submitted 5 July, 2019; v1 submitted 7 September, 2018;
originally announced September 2018.
-
Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N
Authors:
Katarzyna Gas,
Jaroslaw Z. Domagala,
Rafal Jakiela,
Gerd Kunert,
Piotr Dluzewski,
Edyta Piskorska-Hommel,
Wojciech Paszkowicz,
Dariusz Sztenkiel,
Maciej J. Winiarski,
Dorota Kowalska,
Rafal Szukiewicz,
Tomasz Baraniecki,
Andrzej Miszczuk,
Detlef Hommel,
Maciej Sawicki
Abstract:
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 °C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powd…
▽ More
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 °C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powder-like and high resolution X-ray diffraction, which do not reveal any crystallographic phase separation, clusters or nanocrystals, even at the lowest Tg. Our synchrotron based X-ray absorption near-edge spectroscopy supported by density functional theory modelling and superconducting quantum interference device magnetometry results point to the predominantly +3 configuration of Mn in GaN and thus the ferromagnetic phase has been observed in layers with x > 5% at 3 < T < 10 K. The main detrimental effect of Tg reduced to 590 °C is formation of flat hillocks, which increase the surface root-mean-square roughness, but only to mere 3.3 nm. Fine substrates surface temperature map** has shown that the magnitudes of both x and Curie temperature (Tc) correlate with local Tg. It has been found that a typical 10 °C variation of Tg across 1 inch substrate can lead to 40% dispersion of Tc. The established here strong sensitivity of Tc on Tg turns magnetic measurements into a very efficient tool providing additional information on local Tg, an indispensable piece of information for growth mastering of ternary compounds in which metal species differ in almost every aspect of their growth related parameters determining the kinetics of the growth. We also show that the precise determination of Tc by two different methods, each sensitive to different moments of Tc distribution, may serve as a tool for quantification of spin homogeneity within the material.
△ Less
Submitted 8 March, 2018;
originally announced March 2018.
-
Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures
Authors:
L. Janicki,
G. Kunert,
M. Sawicki,
E. Piskorska-Hommel,
K. Gas,
R. Jakiela,
D. Hommel,
R. Kudrawiec
Abstract:
The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1-xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thic…
▽ More
The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1-xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thickness of the depletion layer is negligibly small. For x > 0.1% the Fermi level is located about 1.25 - 1.55 eV above the valence band, that is very close to, but visibly below the Mn-related Mn2+/Mn3+ impurity band. The accumulated data allows us to estimate the Mn-related band offsets at the (Ga,Mn)N/GaN interface. It is found that most of the band gap change in (Ga,Mn)N takes place in the valence band on the absolute scale and amounts to -0.028+-0.008 eV/% Mn. The strong Fermi level pinning in the middle of the band gap, no carrier conductivity within the Mn-related impurity band, and a good homogeneity enable a novel functionality of (Ga,Mn)N as a semi-insulating buffer layers for applications in GaN-based heterostuctures.
△ Less
Submitted 16 December, 2017;
originally announced December 2017.
-
Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties
Authors:
J. Sadowski,
S. Kret,
A. Siusys,
T. Wojciechowski,
K. Gas,
M. F. Islam,
C. M. Canali,
M. Sawicki
Abstract:
(Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by a…
▽ More
(Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by a proper selection/choice of both the core and outer shell materials.
△ Less
Submitted 15 December, 2017;
originally announced December 2017.
-
Stretching magnetism with an electric field in a nitride semiconductor
Authors:
D. Sztenkiel,
M. Foltyn,
G. P. Mazur,
R. Adhikari,
K. Kosiel,
K. Gas,
M. Zgirski,
R. Kruszka,
R. Jakiela,
Tian Li,
A. Piotrowska,
A. Bonanni,
M. Sawicki,
T. Dietl
Abstract:
By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap region, and the Mn3+ ions show strong single-ion anisotropy. We establish that (Ga,Mn)N sustains an electric field up to at least 5 MV/cm, indicating that…
▽ More
By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap region, and the Mn3+ ions show strong single-ion anisotropy. We establish that (Ga,Mn)N sustains an electric field up to at least 5 MV/cm, indicating that Mn do** turns GaN into a worthwhile semi-insulating material. Under these conditions, the magnetoelectric coupling may be driven by the inverse piezoelectric effect that stretches the elementary cell along the c axis and, thus, affects the magnitude of magnetic anisotropy. We develop a corresponding theory and show that it describes the experimentally determined dependence of magnetization on the electric field quantitatively with no adjustable parameters as a function of the magnetic field and temperature. In this way, our work bridges two research domains developed so far independently: piezoelectricity of wurtzite semiconductors and electrical control of magnetization in hybrid and composite magnetic structures containing piezoelectric components.
△ Less
Submitted 2 November, 2016; v1 submitted 23 April, 2016;
originally announced April 2016.
-
All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy
Authors:
Aloyzas Siusys,
Janusz Sadowski,
Maciej Sawicki,
Slawomir Kret,
Tomasz Wojciechowski,
Katarzyna Gas,
Wojciech Szuszkiewicz,
Agnieszka Kaminska,
Tomasz Story
Abstract:
Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {1-100} side facets of the cores at much lower temperature (220 °C). High resolution transmission electron micr…
▽ More
Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {1-100} side facets of the cores at much lower temperature (220 °C). High resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure. Scanning and transmission electron microscopy observations show smooth (Ga,Mn)As shells containing 5% of Mn epitaxially deposited on (In,Ga)As cores containing about 10% of In, without any misfit dislocations at the core-shell interface. With the In content in the (In,Ga)As cores larger than 5% the (In,Ga)As lattice parameter is higher than that of (Ga,Mn)As and the shell is in the tensile strain state. Elaborated magnetic studies indicate the presence of ferromagnetic coupling in (Ga,Mn)As shells at the temperatures in excess of 33 K. This coupling is maintained only in separated mesoscopic volumes resulting in an overall superparamagnetic behavior which gets blocked below ~17 K.
△ Less
Submitted 9 September, 2014;
originally announced September 2014.
-
Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates
Authors:
Katarzyna Gas,
Janusz Sadowski,
Takeshi Kasama,
Aloyzas Siusys,
Wojciech Zaleszczyk,
Tomasz Wojciechowski,
Jean-Francois Morhange,
Abdulmenaf Altintas,
H. Q. Xu,
Wojciech Szuszkiewicz
Abstract:
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga…
▽ More
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets at the top of the nanowires. Optical and transport measurements revealed that the limit of Mn content for self-catalysed growth of GaAs nanowires corresponds to the do** level, i.e., is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.
△ Less
Submitted 19 December, 2013;
originally announced December 2013.
