Stark Control of Electrons Across the Molecule-Semiconductor Interface
Authors:
Antonio J. Garzón-Ramírez,
Ignacio Franco
Abstract:
Controlling matter at the level of electrons using ultrafast laser sources represents an important challenge for science and technology. Recently we introduced a general laser control scheme (the Stark Control of Electrons at Interfaces or SCELI) based on the Stark effect that uses the subcycle structure of light to manipulate electron dynamics at semiconductor interfaces [{Phys. Rev. B \textbf{98…
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Controlling matter at the level of electrons using ultrafast laser sources represents an important challenge for science and technology. Recently we introduced a general laser control scheme (the Stark Control of Electrons at Interfaces or SCELI) based on the Stark effect that uses the subcycle structure of light to manipulate electron dynamics at semiconductor interfaces [{Phys. Rev. B \textbf{98}, 121305 (2018)}]. Here, we demonstrate that SCELI is also of general applicability in molecule-semiconductor interfaces. We do so by following the quantum dynamics induced by non-resonant few-cycle laser pulses of intermediate intensity (non-perturbative but non-ionizing) across model molecule-semiconductor interfaces of varying level alignments. We show that SCELI induces interfacial charge transfer regardless of the energy level alignment of the interface and even in situations where charge exchange is forbidden via resonant photoexcitation. We further show that the SCELI rate of charge transfer is faster than those offered by resonant photoexcitation routes as it is controlled by the subcycle structure of light. The results underscore the general applicability of SCELI to manipulate electron dynamics at interfaces on ultrafast timescales.
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Submitted 28 July, 2023; v1 submitted 18 July, 2023;
originally announced July 2023.
Light-field control of real and virtual charge carriers
Authors:
Tobias Boolakee,
Christian Heide,
Antonio Garzón-Ramírez,
Heiko B. Weber,
Ignacio Franco,
Peter Hommelhoff
Abstract:
Light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone it is referred to as virtual, while the population remaining excited is cal…
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Light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone it is referred to as virtual, while the population remaining excited is called real. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption, while photocurrent generation may stem from real as well as virtual charge carriers. Yet, a link between the carrier types in their generation and importance for observables up to technological relevance is missing. Here we show that real and virtual carriers can be excited and disentangled in the optical generation of currents in a gold-graphene-gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, while virtual carriers generate a polarization response read out at the gold-graphene interfaces. Based on these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type will dramatically increase the integrated circuit design space and bring closer to reality petahertz signal processing.
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Submitted 8 March, 2022; v1 submitted 7 March, 2022;
originally announced March 2022.
