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Structure of germanene/Al(111): a two-layers surface alloy
Authors:
K. Zhang,
D. Sciacca,
M. -C. Hanf,
R. Bernard,
Yves Borensztein,
A. Resta,
Y. Garreau,
A. Vlad,
A. Coati,
I. Lefebvre,
M. Derivaz,
C. Pirri,
P. Sonnet,
R. Stephan,
G. Prévot
Abstract:
Unlike silicene, for which the demonstration of its existence has been done through numerous independent studies, the possibility of growing epitaxial germanene remains highly controversial. It has been recently shown by scanning tunneling microscopy that the (3 x 3) surface reconstruction formed upon Ge deposition on Al(111) presents a honeycomb structure, and it was assigned to a pure germanene…
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Unlike silicene, for which the demonstration of its existence has been done through numerous independent studies, the possibility of growing epitaxial germanene remains highly controversial. It has been recently shown by scanning tunneling microscopy that the (3 x 3) surface reconstruction formed upon Ge deposition on Al(111) presents a honeycomb structure, and it was assigned to a pure germanene monolayer. Using quantitative measurements by surface X-ray diffraction compared to density functional theory calculations, we demonstrate that this Ge/Al(111) (3 x 3) reconstruction corresponds, in fact, to a mixed Ge--Al honeycomb layer on top of an alloyed interfacial layer. The model of a germanene monolayer on top of the Al(111) surface can be completely excluded.
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Submitted 8 November, 2021;
originally announced November 2021.
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Gas-induced selective re-orientation of Au-Cu nanoparticles on TiO 2 (110)
Authors:
Axel Wilson,
Aude Bailly,
Romain Bernard,
Yves Borensztein,
Alessandro Coati,
Bernard Croset,
Hervé Cruguel,
Ahmed Naitabdi,
Mathieu Silly,
Marie-Claire Saint-Lager,
Alina Vlad,
Nadine Witkowski,
Yves Garreau,
Geoffroy Prévot
Abstract:
Au-Cu bimetallic nanoparticles (NPs) grown on TiO 2 (110) have been followed in-situ using grazing incidence x-ray diffraction and x-ray photoemission spectroscopy from their synthesis to their exposure to a CO/O 2 mixture at low pressure (P < 10-5 mbar) and at different temperatures (300 K-470 K). As-prepared samples are composed of two types of alloyed NPs: randomly oriented and
Au-Cu bimetallic nanoparticles (NPs) grown on TiO 2 (110) have been followed in-situ using grazing incidence x-ray diffraction and x-ray photoemission spectroscopy from their synthesis to their exposure to a CO/O 2 mixture at low pressure (P < 10-5 mbar) and at different temperatures (300 K-470 K). As-prepared samples are composed of two types of alloyed NPs: randomly oriented and
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Submitted 7 December, 2020;
originally announced December 2020.
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Co/Ni multilayers for spintronics: high spin-polarization and tunable magnetic anisotropy
Authors:
S. Andrieu,
T. Hauet,
M. Gottwald,
A. Rajanikanth,
L. Calmels,
A. M. Bataille,
F. Montaigne,
S. Mangin,
E. Otero,
P. Ohresser,
P. Le Fevre,
F. Bertran,
A. Resta,
A. Vlad,
A. Coati,
Y. Garreau
Abstract:
In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)…
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In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)] single-crystalline stacks grown by molecular beam epitaxy.
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Submitted 6 February, 2018;
originally announced February 2018.
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The structure and evolution of semiconducting buffer graphene grown on SiC(0001)
Authors:
M. Conrad,
J. Rault,
Y. Utsumi,
Y. Garreau,
A. Vlad,
A. Coati,
J. -P. Rueff,
P. F. Miceli,
E. H. Conrad
Abstract:
Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing waves analysis we have performed a comparative study of the buffer layer structure with and without an additional monolayer graphene layer above it…
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Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing waves analysis we have performed a comparative study of the buffer layer structure with and without an additional monolayer graphene layer above it. We show that no more than 26\% of the buffer carbon is covalently bonded to Si in the SiC interface. We also show that the top SiC bilayer is Si depleted and is the likely the cause of the incommensuration previously observed in this system. When a monolayer graphene layer forms above the buffer, the buffer layer becomes less corrugated with signs of a change in the bonding geometry with the SiC interface. At the same time, the entire SiC interface becomes more disordered, presumably due to entropy associated with the higher growth temperature.
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Submitted 7 July, 2017;
originally announced July 2017.
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Wide bandgap semiconductor from a hidden 2D incommensurate graphene phase
Authors:
Matthew Conrad,
Feng Wang,
Meredith Nevius,
Katherine **kins,
Arlensiú Celis,
Maya Nair,
Amina Taleb-Ibrahim,
Antonio Tejeda,
Yves Garreau,
Alina Vlad,
Alessandro Coati,
Paul Miceli,
Edward Conrad
Abstract:
Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for semiconducting graphene has begun to produce results. This is the case of the first graphene "buffer" layer grown on SiC(0001) presented in this work.…
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Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for semiconducting graphene has begun to produce results. This is the case of the first graphene "buffer" layer grown on SiC(0001) presented in this work. We show, contrary to assumptions of the last forty years, that the buffer graphene layer is not commensurate with SiC. The new modulated structure we've found resolves a long standing contradiction where ab initio calculations expect a metallic buffer, while experimentally it is found to be a semiconductor. Model calculations using the new incommensurate structure show that the semiconducting $π$-band character of the buffer comes from partially hybridized graphene incommensurate boundaries surrounding unperturbed graphene islands.
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Submitted 10 October, 2016; v1 submitted 6 October, 2016;
originally announced October 2016.
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Symmetry of the Fermi surface and evolution of the electronic structure across the paramagnetic-helimagnetic transition in MnSi/Si(111)
Authors:
Alessandro Nicolaou,
Matteo Gatti,
Elena Magnano,
Patrick Le Fèvre,
Federica Bondino,
François Bertran,
Antonio Tejeda,
Michèle Sauvage-Simkin,
Alina Vlad,
Yves Garreau,
Alessandro Coati,
Nicolas Guérin,
Fulvio Parmigiani,
Amina Taleb-Ibrahimi
Abstract:
MnSi has been extensively studied for five decades, nonetheless detailed information on the Fermi surface (FS) symmetry is still lacking. This missed information prevented from a comprehensive understanding the nature of the magnetic interaction in this material. Here, by performing angle-resolved photoemission spectroscopy on high-quality MnSi films epitaxially grown on Si(111), we unveil the FS…
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MnSi has been extensively studied for five decades, nonetheless detailed information on the Fermi surface (FS) symmetry is still lacking. This missed information prevented from a comprehensive understanding the nature of the magnetic interaction in this material. Here, by performing angle-resolved photoemission spectroscopy on high-quality MnSi films epitaxially grown on Si(111), we unveil the FS symmetry and the evolution of the electronic structure across the paramagnetic-helimagnetic transition at T$_C$ $\sim$ 40 K, along with the appearance of sharp quasiparticle emission below T$_C$. The shape of the resulting FS is found to fulfill robust nesting effects. These effects can be at the origin of strong magnetic fluctuations not accounted for by state-of-art quasiparticle self-consistent GW approximation. From this perspective, the unforeseen quasiparticle dam** detected in the paramagnetic phase and relaxing only below T$_C$, along with the persistence of the d-bands splitting well above T$_C$, at odds with a simple Stoner model for itinerant magnetism, open the search for exotic magnetic interactions favored by FS nesting and affecting the quasiparticles lifetime.
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Submitted 20 April, 2015;
originally announced April 2015.
