Showing 1–13 of 13 results for author: Garnica, M

Electron delocalization in a 2D Mott insulator

Authors: Cosme G. Ayani, Michele Pisarra, Iván M. Ibarburu, Clara Rebanal, Manuela Garnica, Fabián Calleja, Fernando Martín, Amadeo L. Vázquez de Parga

Abstract: The prominent role of electron-electron interactions in two-dimensional (2D) materials versus three-dimensional (3D) ones is at the origin of the great variety of fermionic correlated states reported in the literature. In this respect, artificial van der Waals heterostructures comprising single layers of highly correlated insulators allow one to explore the effect of the subtle interlayer interact… ▽ More The prominent role of electron-electron interactions in two-dimensional (2D) materials versus three-dimensional (3D) ones is at the origin of the great variety of fermionic correlated states reported in the literature. In this respect, artificial van der Waals heterostructures comprising single layers of highly correlated insulators allow one to explore the effect of the subtle interlayer interaction in the way electrons correlate. In this work, we study the temperature dependence of the electronic properties of a van der Waals heterostructure composed of a single-layer Mott insulator lying on a metallic substrate by performing quasi-particle interference (QPI) maps. We show the emergence of a Fermi contour in the 2D Mott insulator at temperatures below 11K, which we attribute to the delocalization of the Mott electrons associated with the formation of a quantum coherent Kondo lattice. This Kondo lattice introduces a new periodicity in the system, so that the resulting Fermi surface encompasses both the substrate conduction electrons and the now delocalized correlated electrons from the 2D Mott insulator. Density Functional Theory calculations allow us to pinpoint the scattering vectors responsible for the experimentally observed quasi-particle interference maps, thus providing a complete picture of the delocalization of highly correlated electrons in a 2D Mott insulator. △ Less

Submitted 16 May, 2024; originally announced May 2024.

Comments: 15 pages, 4 figures

Unveiling the inter-layer interaction in a 1H/1T TaS$_2$ van de Waals heterostructure

Authors: Cosme G. Ayani, M. Bosnar, F. Calleja, Andrés Pinar Solé, O. Stetsovych, Iván M. Ibarburu, Clara Rebanal, Manuela Garnica, Rodolfo Miranda, M. M. Otrokov, M. Ondráček, Pavel Jelínek, A. Arnau, Amadeo L. Vázquez de Parga

Abstract: This study delves into the intriguing properties of 1H/1T-TaS$_2$ van der Waals heterostructure, focusing on the transparency of the 1H layer to the Charge Density Wave of the underlying 1T layer. Despite the sizable interlayer separation and metallic nature of the 1H layer, positive bias voltages result in a pronounced superposition of the 1T charge density wave structure on the 1H layer. The con… ▽ More This study delves into the intriguing properties of 1H/1T-TaS$_2$ van der Waals heterostructure, focusing on the transparency of the 1H layer to the Charge Density Wave of the underlying 1T layer. Despite the sizable interlayer separation and metallic nature of the 1H layer, positive bias voltages result in a pronounced superposition of the 1T charge density wave structure on the 1H layer. The conventional explanation relying on tunneling effects proves insufficient. Through a comprehensive investigation combining lowtemperature scanning tunneling microscopy, scanning tunneling spectroscopy, non-contact atomic force microscopy, and firstprinciples calculations, we propose an alternative interpretation. The transparency effect arises from a weak yet substantial electronic coupling between the 1H and 1T layers, challenging prior understanding of the system. Our results highlight the critical role played by interlayer electronic interactions in van der Waals heterostructures to determine the final ground states of the systems. △ Less

Submitted 26 February, 2024; originally announced February 2024.

Engineering a Spin-Orbit Bandgap in Graphene-Tellurium Heterostructures

Authors: B. Muñiz Cano, D. Pacilè, M. G. Cuxart, A. Amiri, F. Calleja, M. Pisarra, A. Sindona, F. Martín, E. Salagre, P. Segovia, E. G. Michel, A. L. Vázquez de Parga, R. Miranda, J. Camarero, M. Garnica, M. A. Valbuena

Abstract: Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer. Proximity to heavy p elements is a promising approach; however, their interaction in graphene heterostructures has not been as intensively studied as that of ferromagn… ▽ More Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer. Proximity to heavy p elements is a promising approach; however, their interaction in graphene heterostructures has not been as intensively studied as that of ferromagnetic, noble, or heavy d metals, neither as interlayers nor as substrates. In this study, the effective intercalation of Te atoms in a graphene on Ir(111) heterostructure is achieved. Combining techniques such as low energy electron diffraction and scanning tunneling microscopy, the structural evolution of the system as a function of the Te coverage is elucidated, uncovering up to two distinct phases. The presented angle-resolved photoemission spectroscopy analysis reveals the emergence of a bandgap of about 240 meV in the Dirac cone at room temperature, which preserves its characteristic linear dispersion. Furthermore, a pronounced n-do** effect induced by Te in the heterostructure is also observed, and remarkably the possibility of tuning the Dirac point energy towards the Fermi level by reducing the Te coverage while maintaining the open bandgap is demonstrated. Spin-resolved measurements unveil a non-planar chiral spin texture with significant splitting values for both in-plane and out-of-plane spin components. These experimental findings are consistent with the development of a quantum spin Hall phase, where a Te-enhanced intrinsic spin orbit coupling in graphene surpasses the Rashba one and promotes the opening of the spin-orbit bandgap. △ Less

Submitted 28 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures

Metastable polymorphic phases in monolayer TaTe2

Authors: Iolanda Di Bernardo, Joan Ripoll-Sau, Fabian Calleja, Cosme G. Ayani, Rodolfo Miranda, Jose Angel Silva-Guillen, Enric Canadell, Manuela Garnica, Amadeo L. Vazquez de Parga

Abstract: Polymorphic phases and collective phenomena - such as charge density waves (CDWs) - in transition metal dichalcogenides (TMDs) dictate the physical and electronic properties of the material. Most TMDs naturally occur in a single given phase, but the fine-tuning of growth conditions via methods like molecular beam epitaxy (MBE) allows to unlock otherwise inaccessible polymorphic structures. Explori… ▽ More Polymorphic phases and collective phenomena - such as charge density waves (CDWs) - in transition metal dichalcogenides (TMDs) dictate the physical and electronic properties of the material. Most TMDs naturally occur in a single given phase, but the fine-tuning of growth conditions via methods like molecular beam epitaxy (MBE) allows to unlock otherwise inaccessible polymorphic structures. Exploring and understanding the morphological and electronic properties of new phases of TMDs is an essential step to enable their exploitation in technological applications. Here, we use scanning tunneling microscopy to map MBE-grown monolayer TaTe2. We report the first observation of the 1H polymorphic phase, coexisting with the 1T, and demonstrate that their relative coverage can be controlled by adjusting synthesis parameters. Several super-periodic structures, compatible with CDWs, are observed to coexist on the 1T phase. Finally, we provide theoretical insight on the delicate balance between Te...Te and Ta-Ta interactions that dictates the stability of the different phases. Our findings demonstrate that TaTe2 is an ideal platform to investigate competing interactions, and indicate that accurate tuning of growth conditions is key to accessing metastable states in TMDs. △ Less

Submitted 16 January, 2023; originally announced January 2023.

Journal ref: Small 19, 2300262 (2023)

Switchable molecular functionalization of an STM tip: from a Yu-Shiba-Rusinov tip to a Kondo tip

Authors: Cosme. G. Ayani, Fabian Calleja, Ivan M. Ibarburu, Pablo Casado, Nana K. M. Nazriq, Toyo. K. Yamada, Manuela. Garnica, Amadeo L. Vázquez de Parga, Rodolfo Miranda

Abstract: In this work we fabricate and characterize a functionalized superconducting (SC) Nb tip of a scanning tunnelling microscope (STM). The tip is functionalized with a Tetracyanoquinodimethane molecule (TCNQ) that accepts charge from the tip and develops a magnetic moment. As a consequence, in scanning tunnelling spectroscopy (STS), sharp, bias symmetric sub-gap states identified as Yu-Shiba-Rusinov (… ▽ More In this work we fabricate and characterize a functionalized superconducting (SC) Nb tip of a scanning tunnelling microscope (STM). The tip is functionalized with a Tetracyanoquinodimethane molecule (TCNQ) that accepts charge from the tip and develops a magnetic moment. As a consequence, in scanning tunnelling spectroscopy (STS), sharp, bias symmetric sub-gap states identified as Yu-Shiba-Rusinov (YSR) bound states appear against the featureless density of states of a metallic gr/Ir(111) sample. Although the coupling regime of the magnetic impurity with the SC tip depends on the initial absorption configuration of the molecule, the interaction strength between the superconducting tip and the charged TCNQ molecule can be reversibly controlled by tuning the tip-sample distance. The controlled transition from one coupling regime to the other allows us to verify the relation between the energy scales of the two competing many-body effects for the functionalized tip. Quenching the SC state of the Nb tip with a magnetic field switches abruptly from a tip dominated by the YSR bound states to a Kondo tip. △ Less

Submitted 24 May, 2022; originally announced June 2022.

Probing the phase transition to a coherent 2D Kondo lattice

Authors: Cosme G. Ayani, Michele Pisarra, Iván M. Ibarburu, Manuela Garnica, Rodolfo Miranda, Fabián Calleja, Fernando Martín, Amadeo L. Vázquez de Parga

Abstract: Strongly correlated materials exhibit exotic electronic states arising from the strong correlation between electrons. Dimensionality provides a tuning knob because thinning down to atomic thickness reduces screening effects and enhances electron correlations. In this work, a 2D Kondo lattice has been created by stacking a layer of 1T-TaS2 on a 2H-TaS2 crystal, which are bound by weak van der Waals… ▽ More Strongly correlated materials exhibit exotic electronic states arising from the strong correlation between electrons. Dimensionality provides a tuning knob because thinning down to atomic thickness reduces screening effects and enhances electron correlations. In this work, a 2D Kondo lattice has been created by stacking a layer of 1T-TaS2 on a 2H-TaS2 crystal, which are bound by weak van der Waals interactions. By using high-resolution scanning tunnelling spectroscopy and density functional theory, we unambiguously demonstrate the formation of a 2D Kondo lattice from an ensemble of independent Kondo impurities present at higher temperatures. The possibility to create 2D Kondo lattices in van der Waals heterostructures paves the way for the exploration of unconventional metallic, magnetic and superconducting states not present in more standard correlated materials. △ Less

Submitted 22 November, 2023; v1 submitted 23 May, 2022; originally announced May 2022.

Native point defects and their implications for the Dirac point gap at MnBi$_2$Te$_4$(0001)

Authors: M. Garnica, M. M. Otrokov, P. Casado Aguilar, I. I. Klimovskikh, D. Estyunin, Z. S. Aliev, I. R. Amiraslanov, N. A. Abdullayev, V. N. Zverev, M. B. Babanly, N. T. Mamedov, A. M. Shikin, A. Arnau, A. L. Vázquez de Parga, E. V. Chulkov, R. Miranda

Abstract: The Dirac point gap at the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$ is a highly debated issue. While the early photoemission measurements reported on large gaps in agreement with theoretical predictions, other experiments found vanishingly small splitting of the MnBi$_2$Te$_4$ Dirac cone. Here, we study the crystalline and electronic structure of MnBi$_2$Te$_4$(0001) u… ▽ More The Dirac point gap at the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$ is a highly debated issue. While the early photoemission measurements reported on large gaps in agreement with theoretical predictions, other experiments found vanishingly small splitting of the MnBi$_2$Te$_4$ Dirac cone. Here, we study the crystalline and electronic structure of MnBi$_2$Te$_4$(0001) using scanning tunneling microscopy/spectroscopy (STM/S), micro($μ$)-laser angle resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. Our topographic STM images clearly reveal features corresponding to point defects in the surface Te and subsurface Bi layers that we identify with the aid of STM simulations as Bi$_\text{Te}$ antisites (Bi atoms at the Te sites) and Mn$_\text{Bi}$ substitutions (Mn atoms at the Bi sites), respectively. X-ray diffraction (XRD) experiments further evidence the presence of cation (Mn-Bi) intermixing. Altogether, this affects the distribution of the Mn atoms, which, inevitably, leads to a deviation of the MnBi$_2$Te$_4$ magnetic structure from that predicted for the ideal crystal structure. Our transport measurements suggest that the degree of this deviation varies from sample to sample. Consistently, the ARPES/STS experiments reveal that the Dirac point gap of the topological surface state is different for different samples/sample cleavages. Our DFT surface electronic structure calculations show that, due to the predominant localization of the topological surface state near the Bi layers, Mn$_\text{Bi}$ defects can cause a strong reduction of the MnBi$_2$Te$_4$ Dirac point gap, given the recently proved antiparallel alignment of the Mn$_\text{Bi}$ moments with respect to those of the Mn layer. Our results provide a key to puzzle out the MnBi$_2$Te$_4$ Dirac point gap mystery. △ Less

Submitted 3 September, 2021; originally announced September 2021.

Robust, switchable, C-related, Superconducting Nanostructure at the Apex of a W tip

Authors: C. G. AYani, F. Calleja, P. Casado, A. Norris, J. J. Navarro, M. Garnica, M. Acebron, D. Granados, A. L. Vazquez de Parga, J. G. Rodrigo, R. Miranda

Abstract: We report on a controlled method to fabricate in-situ a superconducting (SC) nanostructure at the apex of the standard W tip of a Scanning Tunnelling Microscope (STM) by pulsing the tunnelling voltage on a graphene covered metal surface. We have characterized the SC properties of the resulting tip as a function of temperature and magnetic field, obtaining a transition temperature of 3.3 K and a cr… ▽ More We report on a controlled method to fabricate in-situ a superconducting (SC) nanostructure at the apex of the standard W tip of a Scanning Tunnelling Microscope (STM) by pulsing the tunnelling voltage on a graphene covered metal surface. We have characterized the SC properties of the resulting tip as a function of temperature and magnetic field, obtaining a transition temperature of 3.3 K and a critical field well above 3T. The SC nanotip is robust, stable, and achieves atomic resolution. The non-SC tip can be easily recovered by controlled voltage pulsing on a clean metal surface. The present result should be taken into account when studying zero-bias features like Kondo resonances or superconductivity on graphene-based systems by means of STM using tungsten tips. △ Less

Submitted 27 June, 2019; v1 submitted 7 June, 2019; originally announced June 2019.

Periodic spatial variation of the electron-phonon interaction in epitaxial graphene on Ru(0001

Authors: Andres Castellanos-Gomez, Gabino Rubio-Bollinger, Sara Barja, Manuela Garnica, Amadeo L. Vázquez de Parga, Rodolfo Miranda, Nicolás Agraït

Abstract: We have performed low temperature scanning tunnelling spectroscopy (STS) measurements on graphene epitaxially grown on Ru(0001). An inelastic feature, related to the excitation of a vibrational breathing mode of the graphene lattice, was found at 360 meV. The change in the differential electrical conductance produced by this inelastic feature, which is associated with the electron-phonon interacti… ▽ More We have performed low temperature scanning tunnelling spectroscopy (STS) measurements on graphene epitaxially grown on Ru(0001). An inelastic feature, related to the excitation of a vibrational breathing mode of the graphene lattice, was found at 360 meV. The change in the differential electrical conductance produced by this inelastic feature, which is associated with the electron-phonon interaction strength, varies spatially from one position to other of the graphene supercell. This inhomogeneity in the electronic properties of graphene on Ru(0001) results from local variations of the carbon-ruthenium interaction due to the lattice mismatch between the graphene and the Ru(0001) lattices. △ Less

Submitted 22 February, 2013; originally announced February 2013.

Comments: 6 Pages, 3 figures

Journal ref: Appl. Phys. Lett. 102, 063114 (2013

Highly reproducible low temperature scanning tunnelling microscopy and spectroscopy with in situ prepared tips

Authors: Andres Castellanos-Gomez, Gabino Rubio-Bollinger, Manuela Garnica, Sara Barja, Amadeo L. Vázquez de Parga, Rodolfo Miranda, Nicolás Agraït

Abstract: An in situ tip preparation procedure compatible with ultra-low temperature and high magnetic field scanning tunneling microscopes is presented. This procedure does not require additional preparation techniques such as thermal annealing or ion milling. It relies on the local electric-field-induced deposition of material from the tip onto the studied surface. Subsequently, repeated indentations are… ▽ More An in situ tip preparation procedure compatible with ultra-low temperature and high magnetic field scanning tunneling microscopes is presented. This procedure does not require additional preparation techniques such as thermal annealing or ion milling. It relies on the local electric-field-induced deposition of material from the tip onto the studied surface. Subsequently, repeated indentations are performed onto the sputtered cluster to mechanically anneal the tip apex and thus to ensure the stability of the tip. The efficiency of this method is confirmed by comparing the topography and spectroscopy data acquired with either unprepared or in situ prepared tips on epitaxial graphene grown on Ru (0001). We demonstrate that the use of in situ prepared tips increases the stability of the scanning tunneling images and the reproducibility of the spectroscopic measurements. △ Less

Submitted 4 September, 2012; originally announced September 2012.

Comments: 9 Pages, 4 figures (including supp. material)

Journal ref: Ultramicroscopy 122 (2012) 1-5

Electronic and Geometric Corrugation of Periodically Rippled, Self-nanostructured Graphene Epitaxially Grown on Ru(0001)

Authors: Bogdana Borca, Sara Barja, Manuela Garnica, Marina Minniti, Antonio Politano, Josefa M. Rodriguez-García, Juan Jose Hinarejos, Daniel Farías, Amadeo L. Vázquez de Parga, Rodolfo Miranda

Abstract: Graphene epitaxially grown on Ru(0001) displays a remarkably ordered pattern of hills and valleys in Scanning Tunneling Microscopy (STM) images. To which extent the observed "ripples" are structural or electronic in origin have been much disputed recently. A combination of ultrahigh resolution STM images and Helium Atom diffraction data shows that i) the graphene lattice is rotated with respect to… ▽ More Graphene epitaxially grown on Ru(0001) displays a remarkably ordered pattern of hills and valleys in Scanning Tunneling Microscopy (STM) images. To which extent the observed "ripples" are structural or electronic in origin have been much disputed recently. A combination of ultrahigh resolution STM images and Helium Atom diffraction data shows that i) the graphene lattice is rotated with respect to the lattice of Ru and ii) the structural corrugation as determined from He diffraction is substantially smaller (0.015 nm) than predicted (0.15 nm) or reported from X-Ray Diffraction or Low Energy Electron Diffraction. The electronic corrugation, on the contrary, is strong enough to invert the contrast between hills and valleys above +2.6 V as new, spatially localized electronic states enter the energy window of the STM. The large electronic corrugation results in a nanostructured periodic landscape of electron and holes pockets. △ Less

Submitted 11 August, 2010; v1 submitted 11 May, 2010; originally announced May 2010.

Comments: 16 pages, 6 figures

Journal ref: New Journal of Physics 12, 093018 (2010)

Potential Energy Landscape for hot electrons in periodically nanostructured graphene

Authors: B. Borca, S. Barja, M. Garnica, D. Sanchez-Portal, V. M. Silkin, E. V. Chulkov, F. Hermanns, J. J. Hinarejos, A. L. Vazquez de Parga, A. Arnau, P. M. Echenique, R. Miranda

Abstract: We explore the spatial variations of the unoccupied electronic states of graphene epitaxially grown on Ru(0001) and observed three unexpected features: the first graphene image state is split in energy, unlike all other image states, the split state does not follow the local work function modulation, and a new interfacial state at +3 eV appears on some areas of the surface. These results show the… ▽ More We explore the spatial variations of the unoccupied electronic states of graphene epitaxially grown on Ru(0001) and observed three unexpected features: the first graphene image state is split in energy, unlike all other image states, the split state does not follow the local work function modulation, and a new interfacial state at +3 eV appears on some areas of the surface. These results show the system behaves as a self-organized periodic array of quantum dots. △ Less

Submitted 5 April, 2010; originally announced April 2010.

Comments: 20 pages, 6 figures

Journal ref: Physical Review Letters 105, 036804 (2010)

Periodically modulated geometric and electronic structure of graphene on Ru(0001)

Authors: B. Borca, S. Barja, M. Garnica, J. J. Hinarejos, A. L. Vazquez de Parga, R. Miranda, F. Guinea

Abstract: We report here on a method to fabricate and characterize highly perfect, periodically rippled graphene monolayers and islands, epitaxially grown on single crystal metallic substrates under controlled UHV conditions. The periodicity of the ripples is dictated by the difference in lattice parameters of graphene and substrate, and, thus, it is adjustable. We characterize its perfection at the atomi… ▽ More We report here on a method to fabricate and characterize highly perfect, periodically rippled graphene monolayers and islands, epitaxially grown on single crystal metallic substrates under controlled UHV conditions. The periodicity of the ripples is dictated by the difference in lattice parameters of graphene and substrate, and, thus, it is adjustable. We characterize its perfection at the atomic scale by means of STM and determine its electronic structure in the real space by local tunnelling spectroscopy. There are periodic variations in the geometric and electronic structure of the graphene monolayer. We observe inhomogeneities in the charge distribution, i.e a larger occupied Density Of States at the higher parts of the ripples. Periodically rippled graphene might represent the physical realization of an ordered array of coupled graphene quantum dots. The data show, however, that for rippled graphene on Ru(0001) both the low and the high parts of the ripples are metallic. The fabrication of periodically rippled graphene layers with controllable characteristic length and different bonding interactions with the substrate will allow a systematic experimental test of this fundamental problem. △ Less

Submitted 27 March, 2009; originally announced March 2009.

Comments: 12 pages. Contribution to the topical issue on graphene of Semiconductor Science and Technology