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Inelastic x-ray scattering measurements on URu2Si2
Authors:
D. R. Gardner,
C. J. Bonnoit,
R. Chisnell,
T. J. Williams,
G. M. Luke,
Y. S. Lee
Abstract:
We report high-resolution inelastic x ray scattering measurements of the acoustic phonons of URu2Si2. We observe minimal change in the phonon structure upon entering the Hidden Order phase. At all temperatures, the longitudinal acoustic phonons are anomalously broad at low q. There is no evidence to suggest that the increase in thermal conductivity in the Hidden Order phase is driven by a change i…
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We report high-resolution inelastic x ray scattering measurements of the acoustic phonons of URu2Si2. We observe minimal change in the phonon structure upon entering the Hidden Order phase. At all temperatures, the longitudinal acoustic phonons are anomalously broad at low q. There is no evidence to suggest that the increase in thermal conductivity in the Hidden Order phase is driven by a change in phonon dispersions or lifetimes. A more likely explanation is that the magnetic excitations in the Hidden Order state contribute to thermal transport.
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Submitted 29 December, 2015;
originally announced December 2015.
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Imaging the Nanoscale Band Structure of Topological Sb
Authors:
Anjan Soumyanarayanan,
Michael M. Yee,
Yang He,
Hsin Lin,
Dillon R. Gardner,
Arun Bansil,
Young S. Lee,
Jennifer E. Hoffman
Abstract:
Many promising building blocks of future electronic technology - including non-stoichiometric compounds, strongly correlated oxides, and strained or patterned films - are inhomogeneous on the nanometer length scale. Exploiting the inhomogeneity of such materials to design next-generation nanodevices requires a band structure probe with nanoscale spatial resolution. To address this demand, we repor…
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Many promising building blocks of future electronic technology - including non-stoichiometric compounds, strongly correlated oxides, and strained or patterned films - are inhomogeneous on the nanometer length scale. Exploiting the inhomogeneity of such materials to design next-generation nanodevices requires a band structure probe with nanoscale spatial resolution. To address this demand, we report the first simultaneous observation and quantitative reconciliation of two candidate probes - Landau level spectroscopy and quasiparticle interference imaging - which we employ here to reconstruct the multi-component surface state band structure of the topological semimetal antimony(Sb). We thus establish the technique of band structure tunneling microscopy (BSTM), whose unique advantages include nanoscale access to non-rigid band structure deformation, empty state dispersion, and magnetic field dependent states. We use BSTM to elucidate the relationship between bulk conductivity and surface state robustness in topological materials, and to quantify essential metrics for spintronics applications.
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Submitted 7 November, 2013;
originally announced November 2013.
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Measurement of intrinsic Dirac fermion cooling on the surface of a topological insulator Bi$_2$Se$_3$ using time- and angle-resolved photoemission spectroscopy
Authors:
Y. H. Wang,
D. Hsieh,
E. J. Sie,
H. Steinberg,
D. R. Gardner,
Y. S. Lee,
P. Jarillo-Herrero,
N. Gedik
Abstract:
We perform time- and angle-resolved photoemission spectroscopy of a prototypical topological insulator Bi$_2$Se$_3$ to study the ultrafast dynamics of surface and bulk electrons after photo-excitation. By analyzing the evolution of surface states and bulk band spectra, we obtain their electronic temperature and chemical potential relaxation dynamics separately. These dynamics reveal strong phonon-…
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We perform time- and angle-resolved photoemission spectroscopy of a prototypical topological insulator Bi$_2$Se$_3$ to study the ultrafast dynamics of surface and bulk electrons after photo-excitation. By analyzing the evolution of surface states and bulk band spectra, we obtain their electronic temperature and chemical potential relaxation dynamics separately. These dynamics reveal strong phonon-assisted surface-bulk coupling at high lattice temperature and total suppression of inelastic scattering between the surface and the bulk at low lattice temperature. In this low temperature regime, the unique cooling of Dirac fermions in TI by acoustic phonons is manifested through a power law dependence of the surface temperature decay rate on carrier density.
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Submitted 23 August, 2012;
originally announced August 2012.
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Probing electronic order via coupling to low energy phonons in superconducting Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$
Authors:
C. J. Bonnoit,
D. R. Gardner,
R. Chisnell,
A. H. Said,
Y. Okada,
T. Kondo,
T. Takeuchi,
H. Ikuta,
D. E. Moncton,
Y. S. Lee
Abstract:
We report high-resolution inelastic x-ray scattering measurements of the acoustic phonons in the single-layer cuprate $Bi_{2}Sr_{2-x)La_{x}CuO_{6+δ}$. These measurements reveal anomalous broadening of the longitudinal acoustic phonon near the (1/4,1/4,0) wavevector. The observed wavevector and its do** dependence indicate the coupling of the phonons to an underlying electronic density wave state…
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We report high-resolution inelastic x-ray scattering measurements of the acoustic phonons in the single-layer cuprate $Bi_{2}Sr_{2-x)La_{x}CuO_{6+δ}$. These measurements reveal anomalous broadening of the longitudinal acoustic phonon near the (1/4,1/4,0) wavevector. The observed wavevector and its do** dependence indicate the coupling of the phonons to an underlying electronic density wave state. In addition, a comparison of the scattered intensities for x-ray energy-gain and x-ray energy-loss indicates that both time-reversal and inversion symmetries are broken in the material. Upon cooling, the effects of symmetry breaking are enhanced in the pseudogap state.
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Submitted 22 February, 2012;
originally announced February 2012.
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Selective probing of photo-induced charge and spin dynamics in the bulk and surface of a topological insulator
Authors:
D. Hsieh,
F. Mahmood,
J. W. McIver,
D. R. Gardner,
Y. S. Lee,
N. Gedik
Abstract:
Topological insulators possess completely different spin-orbit coupled bulk and surface electronic spectra that are each predicted to exhibit exotic responses to light. Here we report time-resolved fundamental and second harmonic optical pump-probe measurements on the topological insulator Bi2Se3 to independently measure its photo-induced charge and spin dynamics with bulk and surface selectivity.…
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Topological insulators possess completely different spin-orbit coupled bulk and surface electronic spectra that are each predicted to exhibit exotic responses to light. Here we report time-resolved fundamental and second harmonic optical pump-probe measurements on the topological insulator Bi2Se3 to independently measure its photo-induced charge and spin dynamics with bulk and surface selectivity. Our results show that a transient net spin density can be optically induced in both the bulk and surface, which may drive spin transport in topological insulators. By utilizing a novel rotational anisotropy analysis we are able to separately resolve the spin de-polarization, intraband cooling and interband recombination processes following photo-excitation, which reveal that spin and charge degrees of freedom relax on very different time scales owing to strong spin-orbit coupling.
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Submitted 8 August, 2011;
originally announced August 2011.
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Photoemission Spectroscopy of Magnetic and Non-magnetic Impurities on the Surface of the Bi$_2$Se$_3$ Topological Insulator
Authors:
T. Valla,
Z. -H. Pan,
D. R. Gardner,
Y. S. Lee,
S. Chu
Abstract:
Dirac-like surface states on surfaces of topological insulators have a chiral spin structure that suppresses back-scattering and protects the coherence of these states in the presence of non-magnetic scatterers. In contrast, magnetic scatterers should open the back- scattering channel via the spin-flip processes and degrade the state's coherence. We present angle-resolved photoemission spectroscop…
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Dirac-like surface states on surfaces of topological insulators have a chiral spin structure that suppresses back-scattering and protects the coherence of these states in the presence of non-magnetic scatterers. In contrast, magnetic scatterers should open the back- scattering channel via the spin-flip processes and degrade the state's coherence. We present angle-resolved photoemission spectroscopy studies of the electronic structure and the scattering rates upon adsorption of various magnetic and non-magnetic impurities on the surface of Bi$_2$Se$_3$, a model topological insulator. We reveal a remarkable insensitivity of the topological surface state to both non-magnetic and magnetic impurities in the low impurity concentration regime. Scattering channels open up with the emergence of hexagonal war** in the high-do** regime, irrespective of the impurity's magnetic moment.
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Submitted 12 March, 2012; v1 submitted 5 April, 2011;
originally announced April 2011.
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Observation of a warped helical spin-texture in Bi$_2$Se$_3$ from circular dichroism angle-resolved photoemission spectroscopy
Authors:
Y. H. Wang,
D. Hsieh,
D. Pilon,
L. Fu,
D. R. Gardner,
Y. S. Lee,
N. Gedik
Abstract:
A differential coupling of topological surface states to left- versus right-circularly polarized light is the basis of many opto-spintronics applications of topological insulators. Here we report direct evidence of circular dichroism from the surface states of Bi$_2$Se$_3$ using a laser-based time-of-flight angle-resolved photoemission spectroscopy. By employing a novel sample rotational analysis,…
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A differential coupling of topological surface states to left- versus right-circularly polarized light is the basis of many opto-spintronics applications of topological insulators. Here we report direct evidence of circular dichroism from the surface states of Bi$_2$Se$_3$ using a laser-based time-of-flight angle-resolved photoemission spectroscopy. By employing a novel sample rotational analysis, we resolve unusual modulations in the circular dichroism photoemission pattern as a function of both energy and momentum, which perfectly mimic the predicted but hitherto un-observed three-dimensional warped spin-texture of the surface states. By develo** a microscopic theory of photoemission from topological surface states, we show that this correlation is a natural consequence of spin-orbit coupling. These results suggest that our technique may be a powerful probe of the spin-texture of spin-orbit coupled materials in general.
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Submitted 12 November, 2011; v1 submitted 28 January, 2011;
originally announced January 2011.
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Nonlinear optical probe of tunable surface electrons on a topological insulator
Authors:
D. Hsieh,
J. W. McIver,
D. H. Torchinsky,
D. R. Gardner,
Y. S. Lee,
N. Gedik
Abstract:
We use ultrafast laser pulses to experimentally demonstrate that the second-order optical response of bulk single crystals of the topological insulator Bi$_2$Se$_3$ is sensitive to its surface electrons. By performing surface do** dependence measurements as a function of photon polarization and sample orientation we show that second harmonic generation can simultaneously probe both the surface c…
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We use ultrafast laser pulses to experimentally demonstrate that the second-order optical response of bulk single crystals of the topological insulator Bi$_2$Se$_3$ is sensitive to its surface electrons. By performing surface do** dependence measurements as a function of photon polarization and sample orientation we show that second harmonic generation can simultaneously probe both the surface crystalline structure and the surface charge of Bi$_2$Se$_3$. Furthermore, we find that second harmonic generation using circularly polarized photons reveals the time-reversal symmetry properties of the system and is surprisingly robust against surface charging, which makes it a promising tool for spectroscopic studies of topological surfaces and buried interfaces.
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Submitted 7 January, 2011;
originally announced January 2011.
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Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
Authors:
Hadar Steinberg,
Dillon R. Gardner,
Young S. Lee,
Pablo Jarillo-Herrero
Abstract:
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi2Se3 devices and show that the density of the surface states can be modulated via the e…
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Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi2Se3 devices and show that the density of the surface states can be modulated via the electric field effect by using a top-gate with a high-k dielectric insulator. The conductance dependence on geometry, gate voltage, and temperature all indicate that transport is governed by parallel surface and bulk contributions. Moreover, the conductance dependence on top-gate voltage is ambipolar, consistent with tuning between electrons and hole carriers at the surface.
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Submitted 13 December, 2010;
originally announced December 2010.
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Ambipolar Electric Field Effect in Metallic Bi2Se3
Authors:
Hadar Steinberg,
Dillon R. Gardner,
Young S. Lee,
Pablo Jarillo-Herrero
Abstract:
Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of physical phenomena such as anomalous magneto-electric coupling and Majorana excitations. Although TI surface states have been detected in Bi-based compounds by AR…
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Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of physical phenomena such as anomalous magneto-electric coupling and Majorana excitations. Although TI surface states have been detected in Bi-based compounds by ARPES and STM techniques, electrical control over their density, required for most transport experiments, remains a challenge. Existing materials are heavily doped in the bulk, thus preventing electrical tunability of the surface states and their integration into topological quantum electronic devices. Here we show that electronic transport in metallic Bi2Se3 nanoscale devices can be controlled by tuning the surface density via the electric field effect. By choosing an appropriate high-k dielectric, we are able to shift the Fermi energy through the charge neutrality point of the surface states, resulting in ambipolar transport characteristics reminiscent of those observed in graphene. Combining magnetotransport, field effect, and geometry dependent experiments, we provide transport measurements of the surface state mobility, and identify likely scattering mechanisms by measuring its temperature dependence.
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Submitted 12 September, 2010; v1 submitted 16 March, 2010;
originally announced March 2010.