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Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity
Authors:
Georgios Chatzigiannakis,
Angelina Jaros,
Renaud Leturcq,
Jorgen Jungclaus,
Tobias Voss,
Spiros Gardelis,
Maria Kandyla
Abstract:
An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visible, and near IR (NIR) photons by polarity control of the photocurrent. The photodetector is developed by atomic layer deposition (ALD) of ZnO on n-Si…
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An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visible, and near IR (NIR) photons by polarity control of the photocurrent. The photodetector is developed by atomic layer deposition (ALD) of ZnO on n-Si, followed by electric contact deposition and annealing. Photoluminescence measurements reveal high optical quality and improved crystallinity of annealed ZnO on silicon. Photocurrent measurements as a function of illumination wavelength and bias voltage show small negative values in the UV-visible spectral range at zero and positive bias voltage and high positive values in the NIR spectral range. For these measurements, we consider the electric contact to ZnO as the anode and the electric contact to silicon as the cathode. At negative bias voltage, the device shows broadband operation with high photocurrent values across the UV-vis-NIR.
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Submitted 9 February, 2022;
originally announced February 2022.
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Laser-microstructured ZnO/p-Si photodetector with enhanced and broadband responsivity across the UV-Vis-NIR
Authors:
Georgios Chatzigiannakis,
Angelina Jaros,
Renaud Leturcq,
Jörgen Jungclaus,
Tobias Voss,
Spyros Gardelis,
Maria Kandyla
Abstract:
We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation. Microstructured p-type silicon was obtained by ns-laser irradiation in SF6 gas, which results in the formation of quasi-ordered and uniform microspikes on the silicon…
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We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation. Microstructured p-type silicon was obtained by ns-laser irradiation in SF6 gas, which results in the formation of quasi-ordered and uniform microspikes on the silicon surface. The irradiated silicon contains sulfur impurities, which extend its absorbance to the near infrared. A thin film of ZnO was conformally deposited on the microstructured silicon substrates by ALD. Photoluminescence measurements indicate high crystalline quality of the ZnO film after annealing. Current-voltage (I-V) measurements of the ZnO/p-Si heterodiodes in dark show a non-linear behavior with unusual high current values in reverse bias. Under illumination photocurrent is observed for reverse bias, even for wavelengths below the silicon bandgap in the case of the laser-microstructured photodetectors. Higher current values are measured for the microstructured photodetectors, compared to planar ones. Photoconductivity measurements show enhanced responsivity across the UV-Vis-NIR spectral range for the laser-microstructured devices, due to their increased surface area and light absorption.
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Submitted 4 October, 2020;
originally announced October 2020.
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Surface and interface study of pulsed-laser-deposited off-stoichiometric NiMnSb thin films on Si(100) substrate
Authors:
S. Rai,
M. K. Tiwari,
G. S. Lodha,
M. H. Modi,
M. K. Chattopadhyay,
S. Majumdar,
S. Gardelis,
Z. Viskadourakis,
J. Giapintzakis,
R. V. Nandedkar,
S. B. Roy,
P. Chaddah
Abstract:
We report a detailed study of surface and interface properties of pulsed-laser deposited NiMnSb films on Si (100) substrate as a function of film thickness. As the thickness of films is reduced below 35 nm formation of a porous layer is observed. Porosity in this layer increases with decrease in NiMnSb film thickness. These morphological changes of the ultra thin films are reflected in the inter…
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We report a detailed study of surface and interface properties of pulsed-laser deposited NiMnSb films on Si (100) substrate as a function of film thickness. As the thickness of films is reduced below 35 nm formation of a porous layer is observed. Porosity in this layer increases with decrease in NiMnSb film thickness. These morphological changes of the ultra thin films are reflected in the interesting transport and magnetic properties of these films. On the other hand, there are no influences of compositional in-homogeneity and surface/interface roughness on the magnetic and transport properties of the films.
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Submitted 13 October, 2005;
originally announced October 2005.
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Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect
Authors:
S. Gardelis,
J. Androulakis,
Z. Viskadourakis,
E. L. Papadopoulou,
J. Giapintzakis
Abstract:
We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant magnetoresistance (GMR) effect is observed when the external magnetic field is parallel to the surface of the film and to the current direction. We attribute the observe…
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We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant magnetoresistance (GMR) effect is observed when the external magnetic field is parallel to the surface of the film and to the current direction. We attribute the observed phenomenon to magnetic precipitates formed during the magnetic film deposition and confined to a narrow layer at the interface. The effect of these precipitates on the magnetoresistance depends on the thermal processing of the system.
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Submitted 11 October, 2005;
originally announced October 2005.
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An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device
Authors:
S. Gardelis,
C. G Smith,
C. H. W. Barnes,
E. H. Linfield,
D. A. Ritchie
Abstract:
We present the first spintronic semiconductor field effect transistor.
The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb…
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We present the first spintronic semiconductor field effect transistor.
The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb/InAs quantum well.
Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first occurring at the ferromagnet-2DEG interfaces; and the second occuring in direct propagation between contacts.
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Submitted 3 February, 1999;
originally announced February 1999.
