Blue-to-green single photons from InGaN/GaN dot-in-a-wire nanowire ordered arrays
Authors:
E. Chernysheva,
Z. Gacevic,
N. Garcia-Lepetit,
H. P. van der Meulen,
M. Muller,
F. Bertram,
P. Veit,
A. Torres-Pardo,
J. M. Gonzalez Calbet,
J. Christen,
E. Calleja,
J. M. Calleja,
S. Lazic
Abstract:
Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical…
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Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical emission lines from quantum dot-like recombination centers are observed in the blue-green spectral range. Characterization by electron microscopy, cathodoluminescence and micro-photoluminescence indicate that single photons are emitted from regions of high In concentration in the nano-disks due to alloy composition fluctuations. Single-photon emission is determined by photon correlation measurements showing deep anti-bunching minima in the second-order correlation function. The present results are a promising step towards the realization of on-site/on-demand single-photon sources in the blue-green spectral range operating in the GHz frequency range at high temperatures.
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Submitted 12 June, 2017;
originally announced June 2017.
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Authors:
Snezana Lazic,
Ekaterina Chernysheva,
Zarko Gacevic,
Noemi Garcia-Lepetit,
Herko P. van der Meulen,
Marcus Muller,
Frank Bertram,
Peter Veit,
Jürgen Christen,
Almudena Torres-Pardo,
José M. González Calbet,
Enrique Calleja,
Jose M. Calleja
Abstract:
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epi…
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The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.
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Submitted 12 June, 2017;
originally announced June 2017.
