Visualization by scanning SQUID microscopy of the intermediate state in the superconducting Dirac semimetal PdTe${}_2$
Authors:
P. Garcia-Campos,
Y. K. Huang,
A. de Visser,
K. Hasselbach
Abstract:
The Dirac semimetal PdTe${}_2$ becomes superconducting at a temperature $T_{c}=1.6$~K. Thermodynamic and muon spin rotation experiments support type-I superconductivity, which is unusual for a binary compound. A key property of a type-I superconductor is the intermediate state which presents a coexistence of superconducting and normal domains (flux structures) at magnetic fields lower than the the…
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The Dirac semimetal PdTe${}_2$ becomes superconducting at a temperature $T_{c}=1.6$~K. Thermodynamic and muon spin rotation experiments support type-I superconductivity, which is unusual for a binary compound. A key property of a type-I superconductor is the intermediate state which presents a coexistence of superconducting and normal domains (flux structures) at magnetic fields lower than the thermodynamic critical field $H_{c}$. By means of scanning SQUID microscopy (SSM) we observe flux structures in the superconducting state of PdTe${}_2$. The flux structures are strongly history dependent with a transition from round shapes to laminar shapes as the magnetic field is more and more increased. The field amplitudes measured at the surface are indicative for the presence of Landau branching. The domain wall width in the intermediate state has been determined.
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Submitted 9 March, 2021; v1 submitted 16 July, 2020;
originally announced July 2020.
Niobium nitride thin films for very low temperature resistive thermometry
Authors:
Tuyen Nguyen,
Adib Tavakoli,
Sebastien Triqueneaux,
Rahul Swami,
Aki Ruhtinas,
Jeremy Gradel,
Pablo Garcia-Campos,
Klaus Hasselbach,
Aviad Frydman,
Benjamin Piot,
Mathieu Gibert,
Eddy Collin,
Olivier Bourgeois
Abstract:
We investigate thin film resistive thermometry based on metal-to-insulator-transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance have been calibrated versus temperature and magnetic field. High sensitivity in tempertaure variation detection is demonstrated through efficient temperature coefficient of resistance. The nitrogen content of…
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We investigate thin film resistive thermometry based on metal-to-insulator-transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance have been calibrated versus temperature and magnetic field. High sensitivity in tempertaure variation detection is demonstrated through efficient temperature coefficient of resistance. The nitrogen content of the niobium nitride thin films can be tuned to adjust the optimal working temperature range. In the present experiment, we show the versatility of the NbN thin film technology through applications in very different low temperature use-cases. We demonstrate that thin film resistive thermometry can be extended to temperatures below 30 mK with low electrical impedance.
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Submitted 19 July, 2019;
originally announced July 2019.
