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Femtosecond pulse amplification on a chip
Authors:
Mahmoud A. Gaafar,
Markus Ludwig,
Kai Wang,
Thibault Wildi,
Thibault Voumard,
Milan Sinobad,
Jan Lorenzen,
Henry Francis,
Shuangyou Zhang,
Toby Bi,
Pascal DeľHaye,
Michael Geiselmann,
Neetesh Singh,
Franz X. Kärtner,
Sonia M. Garcia-Blanco,
Tobias Herr
Abstract:
Femtosecond laser pulses enable the synthesis of light across the electromagnetic spectrum and provide access to ultrafast phenomena in physics, biology, and chemistry. Chip-integration of femtosecond technology could revolutionize applications such as point-of-care diagnostics, biomedical imaging, portable chemical sensing, or autonomous navigation. However, current sources lack the required powe…
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Femtosecond laser pulses enable the synthesis of light across the electromagnetic spectrum and provide access to ultrafast phenomena in physics, biology, and chemistry. Chip-integration of femtosecond technology could revolutionize applications such as point-of-care diagnostics, biomedical imaging, portable chemical sensing, or autonomous navigation. However, current sources lack the required power, and the on-chip amplification of femtosecond pulses is an unresolved challenge. Here, addressing this challenge, we report >50-fold amplification of 1 GHz-repetition-rate chirped femtosecond pulses in a CMOS-compatible photonic chip to 800 W peak power with 116 fs pulse duration. Nonlinear effects, usually a hallmark of integrated photonics but prohibitive to pulse amplification are mitigated through all-normal dispersion, large mode-area rare-earth-doped gain waveguides. These results offer a pathway to chip-integrated femtosecond technology with power-levels characteristic of table-top sources.
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Submitted 8 November, 2023;
originally announced November 2023.
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Watt-class CMOS-compatible power amplifier
Authors:
Neetesh Singh,
Jan Lorenzen,
Kai Wang,
Mahmoud A. Gaafar,
Milan Sinobad,
Henry Francis,
Marvin Edelmann,
Michael Geiselmann,
Tobias Herr,
Sonia M Garcia-Blanco,
Franz X. Kaertner
Abstract:
Power amplifier is becoming a critical component for integrated photonics as the integrated devices try to carve out a niche in the world of real-world applications of photonics. That is because the signal generated from an integrated device severely lacks in power which is due mainly to the small size which, although gives size and weight advantage, limits the energy storage capacity of an integr…
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Power amplifier is becoming a critical component for integrated photonics as the integrated devices try to carve out a niche in the world of real-world applications of photonics. That is because the signal generated from an integrated device severely lacks in power which is due mainly to the small size which, although gives size and weight advantage, limits the energy storage capacity of an integrated device due to the small volume, causing it to rely on its bench-top counterpart for signal amplification downstream. Therefore, an integrated high-power signal booster can play a major role by replacing these large solid-state and fiber-based benchtop systems. For decades, large mode area (LMA) technology has played a disruptive role by increasing the signal power and energy by orders of magnitude in the fiber-based lasers and amplifiers. Thanks to the capability of LMA fiber to support significantly larger optical modes the energy storage and handling capability has significantly increased. Such an LMA device on an integrated platform can play an important role for high power applications. In this work, we demonstrate LMA waveguide based CMOS compatible watt-class power amplifier with an on-chip output power reaching ~ 1W within a footprint of ~4mm2.The power achieved is comparable and even surpasses many fiber-based amplifiers. We believe this work opens up opportunities for integrated photonics to find real world application on-par with its benchtop counterpart.
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Submitted 22 June, 2023;
originally announced June 2023.
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Chip-scale, CMOS-compatible, high energy passively Q-switched laser
Authors:
Neetesh Singh,
Jan Lorenzen,
Milan Sinobad,
Kai Wang,
Andreas C. Liapis,
Henry Frankis,
Stefanie Haugg,
Henry Francis,
Jose Carreira,
Michael Geiselmann,
Mahmoud A. Gaafar,
Tobias Herr,
Jonathan D. B. Bradley,
Zhipei Sun,
Sonia M Garcia-Blanco,
Franz X. Kartner
Abstract:
Chip-scale, high-energy optical pulse generation is becoming increasingly important as we expand activities into hard to reach areas such as space and deep ocean. Q-switching of the laser cavity is the best known technique for generating high-energy pulses, and typically such systems are in the realm of large bench-top solid-state lasers and fiber lasers, especially in the long wavelength range >1…
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Chip-scale, high-energy optical pulse generation is becoming increasingly important as we expand activities into hard to reach areas such as space and deep ocean. Q-switching of the laser cavity is the best known technique for generating high-energy pulses, and typically such systems are in the realm of large bench-top solid-state lasers and fiber lasers, especially in the long wavelength range >1.8 um, thanks to their large energy storage capacity. However, in integrated photonics, the very property of tight mode confinement, that enables a small form factor, becomes an impediment to high energy application due to small optical mode cross-section. In this work, we demonstrate complementary metal-oxide-semiconductor (CMOS) compatible, rare-earth gain based large mode area (LMA) passively Q-switched laser in a compact footprint. We demonstrate high on-chip output pulse energy of >150 nJ in single transverse fundamental mode in the eye-safe window (1.9 um), with a slope efficiency ~ 40% in a footprint of ~9 mm2. The high energy pulse generation demonstrated in this work is comparable or in many cases exceeds Q-switched fiber lasers. This bodes well for field applications in medicine and space.
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Submitted 1 March, 2023;
originally announced March 2023.
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Hybrid integrated near UV lasers using the deep-UV Al2O3 platform
Authors:
C. A. A. Franken,
W. A. P. M. Hendriks,
L. V. Winkler,
M. Dijkstra,
A. R. do Nascimento Jr,
A. van Rees,
M. R. S. Mardani,
R. Dekker,
J. van Kerkhof,
P. J. M. van der Slot,
S. M. García-Blanco,
K. -J. Boller
Abstract:
Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable…
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Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.
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Submitted 22 February, 2023;
originally announced February 2023.
