Showing 1–35 of 35 results for author: García, J H

Giant Spin-Orbit Torque in Cr-based Janus Transition Metal Dichalcogenides

Authors: Libor Vojáček, Joaquín Medina Dueñas, **g Li, Fatima Ibrahim, Aurélien Manchon, Stephan Roche, Mairbek Chshiev, José H. García

Abstract: We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of… ▽ More We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of $\sim 100 \,\text{V} \,\text{nm}^{-1}$ in non-Janus CrTe\textsubscript{2}, completely out of experimental reach. By performing transport simulations on custom-made Wannier tight-binding models, Janus systems are found to exhibit a SOT performance comparable to the most efficient two-dimensional materials, while allowing for field-free perpendicular magnetization switching owing to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices. △ Less

Submitted 23 April, 2024; originally announced April 2024.

Comments: 6 pages

Real-space Calculation of Orbital Hall Responses in Disordered Materials

Authors: Luis M. Canonico, Jose H. García, Stephan Roche

Abstract: We developed an efficient numerical approach to compute the different components of the orbital Hall responses in disordered materials from the Berry phase theory of magnetization. We propose a theoretical framework based on the Chebyshev expansion of Green's functions and the position operator for systems under arbitrary boundary conditions. The capability of this scheme is illustrated by computi… ▽ More We developed an efficient numerical approach to compute the different components of the orbital Hall responses in disordered materials from the Berry phase theory of magnetization. We propose a theoretical framework based on the Chebyshev expansion of Green's functions and the position operator for systems under arbitrary boundary conditions. The capability of this scheme is illustrated by computing the orbital Hall conductivity for gapped graphene and Haldane model in the presence of nonperturbative disorder effects. This methodology opens the door to realistic simulations of orbital Hall responses in arbitrary complex models of disordered materials. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Dynamical origin of neutrino masses and dark matter from a new confining sector

Authors: Maximilian Berbig, Juan Herrero Garcia, Giacomo Landini

Abstract: A dynamical mechanism, based on a confining non-abelian dark symmetry, which generates Majorana masses for hypercharge-less fermions, is proposed. We apply it to the inverse seesaw scenario, which allows to generate light neutrino masses from the interplay of TeV-scale Pseudo-Dirac mass terms and a small explicit breaking of lepton number. A single generation of vector-like dark quarks, transformi… ▽ More A dynamical mechanism, based on a confining non-abelian dark symmetry, which generates Majorana masses for hypercharge-less fermions, is proposed. We apply it to the inverse seesaw scenario, which allows to generate light neutrino masses from the interplay of TeV-scale Pseudo-Dirac mass terms and a small explicit breaking of lepton number. A single generation of vector-like dark quarks, transforming under a $\text{SU}(3)_\text{D}$ gauge symmetry, is coupled to a real singlet scalar, which serves as a portal between the dark quark condensate and three generations of heavy sterile neutrinos. Such a dark sector and the Standard Model (SM) are kept in thermal equilibrium with each other via sizeable Yukawa couplings to the heavy neutrinos. In this framework the lightest dark baryon, which has spin $3/2$ and is stabilized at the renormalizable level by an accidental dark baryon number symmetry, can account for the observed relic density via thermal freeze-out from annihilations into the lightest dark mesons. These mesons in turn decay to heavy neutrinos, which produce SM final states upon decay. This model may be probed by next generation neutrino telescopes via neutrino lines produced from dark matter annihilations. △ Less

Submitted 26 March, 2024; originally announced March 2024.

Comments: v1: 7 pages, 2 figures + 1 appendix

Orbital Hall effect and topology on a two-dimensional triangular lattice: from bulk to edge

Authors: Anderson L. R. Barbosa, Luis M. Canonico, Jose H. García, Tatiana G. Rappoport

Abstract: We investigate a generalized multi-orbital tight-binding model on a triangular lattice, a system prevalent in a wide range of two-dimensional materials, and particularly relevant for simulating transition metal dichalcogenide monolayers. We show that the interplay between spin-orbit coupling and different symmetry-breaking mechanisms leads to the emergence of four distinct topological phases [Eck,… ▽ More We investigate a generalized multi-orbital tight-binding model on a triangular lattice, a system prevalent in a wide range of two-dimensional materials, and particularly relevant for simulating transition metal dichalcogenide monolayers. We show that the interplay between spin-orbit coupling and different symmetry-breaking mechanisms leads to the emergence of four distinct topological phases [Eck, P., \textit{et al.}, Phys. Rev. B, 107 (11), 115130 (2023)]. Remarkably, this interplay also triggers the orbital Hall effect with distinguished characteristics. Furthermore, by employing the Landauer-Büttiker formula, we establish that in the orbital Hall insulating phase, the orbital angular momentum is carried by edge states present in nanoribbons with specific terminations. We also show that, as expected, they do not have topological protection against the disorder of the edge states belonging to a first-order topological insulator. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Emerging Spin-Orbit Torques in Low Dimensional Dirac Materials

Authors: Joaquín Medina Dueñas, José H. García, Stephan Roche

Abstract: We report a theoretical description of novel spin-orbit torque components emerging in two-dimensional Dirac materials with broken inversion symmetry. In contrast to usual metallic interfaces where field-like and dam**-like torque components are competing, we find that an intrinsic dam**-like torque which derives from all Fermi-sea electrons can be simultaneously enhanced along with the field-l… ▽ More We report a theoretical description of novel spin-orbit torque components emerging in two-dimensional Dirac materials with broken inversion symmetry. In contrast to usual metallic interfaces where field-like and dam**-like torque components are competing, we find that an intrinsic dam**-like torque which derives from all Fermi-sea electrons can be simultaneously enhanced along with the field-like component. Additionally, hitherto overlooked torque components unique to Dirac materials, emerge from the coupling between spin and pseudospin degrees of freedom. These torques are found to be resilient to disorder and could enhance the magnetic switching performance of nearby magnets. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Spin-orbit torque emerging from orbital textures in centrosymmetric materials

Authors: Luis M. Canonico, Jose H. García, Stephan Roche

Abstract: We unveil a hitherto concealed spin-orbit torque mechanism driven by orbital degrees of freedom in centrosymmetric two-dimensional transition metal dichalcogenides (focusing on PtSe${}_2$ ). Using first-principles simulations, tight-binding models and large-scale quantum transport calculations, we show that such a mechanism fundamentally stems from a spatial localization of orbital textures at opp… ▽ More We unveil a hitherto concealed spin-orbit torque mechanism driven by orbital degrees of freedom in centrosymmetric two-dimensional transition metal dichalcogenides (focusing on PtSe${}_2$ ). Using first-principles simulations, tight-binding models and large-scale quantum transport calculations, we show that such a mechanism fundamentally stems from a spatial localization of orbital textures at opposite sides of the material, which imprints their symmetries onto spin-orbit coupling effects, further producing efficient and tunable spin-orbit torque. Our study suggests that orbital-spin entanglement at play in centrosymmetric materials can be harnessed as a resource for outperforming conventional spin-orbit torques generated by the Rashba-type effects. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Proactive Detractor Detection Framework Based on Message-Wise Sentiment Analysis Over Customer Support Interactions

Authors: Juan Sebastián Salcedo Gallo, Jesús Solano, Javier Hernán García, David Zarruk-Valencia, Alejandro Correa-Bahnsen

Abstract: In this work, we propose a framework relying solely on chat-based customer support (CS) interactions for predicting the recommendation decision of individual users. For our case study, we analyzed a total number of 16.4k users and 48.7k customer support conversations within the financial vertical of a large e-commerce company in Latin America. Consequently, our main contributions and objectives ar… ▽ More In this work, we propose a framework relying solely on chat-based customer support (CS) interactions for predicting the recommendation decision of individual users. For our case study, we analyzed a total number of 16.4k users and 48.7k customer support conversations within the financial vertical of a large e-commerce company in Latin America. Consequently, our main contributions and objectives are to use Natural Language Processing (NLP) to assess and predict the recommendation behavior where, in addition to using static sentiment analysis, we exploit the predictive power of each user's sentiment dynamics. Our results show that, with respective feature interpretability, it is possible to predict the likelihood of a user to recommend a product or service, based solely on the message-wise sentiment evolution of their CS conversations in a fully automated way. △ Less

Submitted 7 November, 2022; originally announced November 2022.

Comments: 10 pages, 4 figures, 1 table. Already accepted at NeurIPS 2022, LatinX in AI Workshop

Electrical Control of Spin-polarized Topological Currents in Monolayer WTe$_2$

Authors: Jose H. Garcia, **xuan You, Monica García-Mota, Peter Koval, Pablo Ordejón, Ramón Cuadrado, Matthieu J. Verstraete, Zeila Zanolli, Stephan Roche

Abstract: We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge curre… ▽ More We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge currents in monolayer 1T'-WTe2 by up to a 90-degree spin rotation, without jeopardizing their topological character. These findings suggest a new kind of gate-controllable spin-based device, topologically protected against disorder and of relevance for the development of topological spintronics. △ Less

Submitted 18 September, 2022; originally announced September 2022.

Giant Valley-Polarized Spin Splittings in Magnetized Janus Pt Dichalcogenides

Authors: Shahid Sattar, J. Andreas Larsson, C. M. Canali, Stephan Roche, Jose H. Garcia

Abstract: We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys dis… ▽ More We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys displays its own spin polarization and a specific spin-texture dictated by broken inversion and time-reversal symmetries, and valley-exchange and Rashba splittings as large as hundreds of meV. This provides a platform for exploring novel spin-valley physics in low-dimensional semiconductors, with potential spin transport mechanisms such as spin-orbit torques much more resilient to disorder and temperature effects. △ Less

Submitted 11 January, 2022; originally announced January 2022.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 105, L041402 (2022)

Have Mysterious Topological Valley Currents Been Observed in Graphene Superlattices?

Authors: Stephan Roche, Stephen R. Power, Branislav K. Nikolić, José Hugo García, Antti-Pekka Jauho

Abstract: We provide a critical discussion concerning the claim of topological valley currents, driven by a global Berry curvature and valley Hall effect proposed in recent literature. After pointing out a major inconsistency of the theoretical scenario proposed to interpret giant nonlocal resistance, we discuss various possible alternative explanations and open directions of research to solve the mystery o… ▽ More We provide a critical discussion concerning the claim of topological valley currents, driven by a global Berry curvature and valley Hall effect proposed in recent literature. After pointing out a major inconsistency of the theoretical scenario proposed to interpret giant nonlocal resistance, we discuss various possible alternative explanations and open directions of research to solve the mystery of nonlocal transport in graphene superlattices. △ Less

Submitted 16 November, 2021; originally announced November 2021.

Comments: 3 pages, 1 figure

Magnetism, symmetry and spin transport in van der Waals layered systems

Authors: Hidekazu Kurebayashi, Jose H. Garcia, Safe Khan, Jairo Sinova, Stephan Roche

Abstract: The discovery of an ever increasing family of atomic layered magnetic materials, together with the already established vast catalogue of strong spin-orbit coupling (SOC) and topological systems, calls for some guiding principles to tailor and optimize novel spin transport and optical properties at their interfaces. Here we focus on the latest developments in both fields that have brought them clos… ▽ More The discovery of an ever increasing family of atomic layered magnetic materials, together with the already established vast catalogue of strong spin-orbit coupling (SOC) and topological systems, calls for some guiding principles to tailor and optimize novel spin transport and optical properties at their interfaces. Here we focus on the latest developments in both fields that have brought them closer together and make them ripe for future fruitful synergy. After outlining fundamentals on van der Waals (vdW) magnetism and SOC effects, we discuss how their coexistence, manipulation and competition could ultimately establish new ways to engineer robust spin textures and drive the generation and dynamics of spin current and magnetization switching in 2D materials-based vdW heterostructures. Grounding our analysis on existing experimental results and theoretical considerations, we draw a prospective analysis about how intertwined magnetism and spin-orbit torque (SOT) phenomena combine at interfaces with well-defined symmetries, and how this dictates the nature and figures-of-merit of SOT and angular momentum transfer. This will serve as a guiding role in designing future non-volatile memory devices that utilize the unique properties of 2D materials with the spin degree of freedom. △ Less

Submitted 12 October, 2021; v1 submitted 8 July, 2021; originally announced July 2021.

Comments: 26 pages, 5 figures, 1 table and 1 textbox

Valley-Polarized Quantum Anomalous Hall Phase in Bilayer Graphene with Layer-Dependent Proximity Effects

Authors: Marc Vila, Jose H. Garcia, Stephan Roche

Abstract: Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin… ▽ More Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin splittings for the conduction and valence bands, which gives rise to a topological gap at a single Dirac cone. The topological phase can be controlled by a gate voltage and switched between valleys by reversing the sign of the exchange interaction. By performing quantum transport calculations in disordered systems, the chirality and resilience of the valley-polarized edge state are demonstrated. Our findings provide a promising route to engineer a topological phase that could enable low-power electronic devices and valleytronic applications. △ Less

Submitted 22 October, 2021; v1 submitted 30 June, 2021; originally announced July 2021.

Comments: Final published version. PRB letter: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.L161113

Manipulation of Spin Transport in Graphene/Transition Metal Dichalcogenide Heterobilayers upon Twisting

Authors: Armando Pezo, Zeila Zanolli, Nils Wittemeier, Pablo Ordejon, Adalberto Fazzio, Stephan Roche, Jose H. Garcia

Abstract: Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and interfacial properties. Here we used large-scale first-principle calculations to demonstrate that strain and twist-angle are efficient knobs to tailor the spin-orbit c… ▽ More Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and interfacial properties. Here we used large-scale first-principle calculations to demonstrate that strain and twist-angle are efficient knobs to tailor the spin-orbit coupling in graphene transition metal dichalcogenide heterobilayers. We found that by choosing a twist-angle of 30 degrees, the spin relaxation times increase by two orders of magnitude, opening a path to improve these heterostructures spin transport capability. Moreover, we demonstrate that strain and twist angle will modify the relative values of valley-Zeeman and Rashba spin-orbit coupling, allowing to tune the system into an ideal Dirac-Rashba regime. These results enable us to envision an answer for the variability of spin-orbit coupling found in different experiments and have significant consequences for applications that depend on polycrystallinity, where grains form at different orientations. △ Less

Submitted 27 August, 2021; v1 submitted 12 November, 2020; originally announced November 2020.

Janus Monolayers of Magnetic Transition Metal Dichalcogenides as an All-in-One Platform for Spin-Orbit Torque

Authors: Idris Smaili, Slimane Laref, Jose H. Garcia, Udo Schwingenschlogl, Stephan Roche, Aurelien Manchon

Abstract: We theoretically predict that vanadium-based Janus dichalcogenide monolayers constitute an ideal platform for spin-orbit-torque memories. Using first principles calculations, we demonstrate that magnetic exchange and magnetic anisotropy energies are higher for heavier chalcogen atoms, while the broken inversion symmetry in the Janus form leads to the emergence of Rashba-like spin-orbit coupling. T… ▽ More We theoretically predict that vanadium-based Janus dichalcogenide monolayers constitute an ideal platform for spin-orbit-torque memories. Using first principles calculations, we demonstrate that magnetic exchange and magnetic anisotropy energies are higher for heavier chalcogen atoms, while the broken inversion symmetry in the Janus form leads to the emergence of Rashba-like spin-orbit coupling. The spin-orbit torque efficiency is evaluated using optimized quantum transport methodology and found to be comparable to heavy nonmagnetic metals. The coexistence of magnetism and spin-orbit coupling in such materials with tunable Fermi-level opens new possibilities for monitoring magnetization dynamics in the perspective of non-volatile magnetic random access memories. △ Less

Submitted 15 July, 2020; originally announced July 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 104, 104415 (2021)

Canted Spin Texture and Quantum Spin Hall Effect in WTe2

Authors: Jose H. Garcia, Marc Vila, Chuang-Han Hsu, Xavier Waintal, Vitor M. Pereira, Stephan Roche

Abstract: We report an unconventional quantum spin Hall phase in the monolayer T$_\text{d}$-WTe$_2$, which exhibits hitherto unknown features in other topological materials. The low-symmetry of the structure induces a canted spin texture in the $yz$ plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized ($2e^2/h$) with… ▽ More We report an unconventional quantum spin Hall phase in the monolayer T$_\text{d}$-WTe$_2$, which exhibits hitherto unknown features in other topological materials. The low-symmetry of the structure induces a canted spin texture in the $yz$ plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized ($2e^2/h$) with a spin quantization axis parallel to the canting direction. These findings are based on large-scale quantum simulations of the spin Hall conductivity tensor and nonlocal resistances in multi-probe geometries using a realistic tight-binding model elaborated from first-principle methods. The observation of this canted quantum spin Hall effect, related to the formation of topological edge states with nontrivial spin polarization, demands for specific experimental design and suggests interesting alternatives for manipulating spin information in topological materials. △ Less

Submitted 10 July, 2020; originally announced July 2020.

Comments: For comments please contact [email protected]

Journal ref: Phys. Rev. Lett. 125, 256603 (2020)

Low-symmetry topological materials for large charge-to-spin interconversion: The case of transition metal dichalcogenide monolayers

Authors: Marc Vila, Chuang-Han Hsu, Jose H. Garcia, L. Antonio Benítez, Xavier Waintal, Sergio Valenzuela, Vitor M. Pereira, Stephan Roche

Abstract: The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments on few-layer ${\rm MoTe}_2$ and ${\rm WTe}_2$ showed that the reduced symmetry of these strong spin-orbit coupling materials enables a new form of {\it canted}… ▽ More The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments on few-layer ${\rm MoTe}_2$ and ${\rm WTe}_2$ showed that the reduced symmetry of these strong spin-orbit coupling materials enables a new form of {\it canted} spin Hall effect, characterized by concurrent in-plane and out-of-plane spin polarizations. Here, through quantum transport calculations on realistic device geometries, including disorder, we predict a very large gate-tunable SHE figure of merit $λ_sθ_{xy}\sim 1\text{--}50$ nm in ${\rm MoTe}_2$ and ${\rm WTe}_2$ monolayers that significantly exceeds values of conventional SHE materials. This stems from a concurrent long spin diffusion length ($λ_s$) and charge-to-spin interconversion efficiency as large as $θ_{xy} \approx 80$\%, originating from momentum-invariant (persistent) spin textures together with large spin Berry curvature along the Fermi contour, respectively. Generalization to other materials and specific guidelines for unambiguous experimental confirmation are proposed, paving the way towards exploiting such phenomena in spintronic devices. These findings vividly emphasize how crystal symmetry and electronic topology can govern the intrinsic SHE and spin relaxation, and how they may be exploited to broaden the range and efficiency of spintronic materials and functionalities. △ Less

Submitted 3 January, 2022; v1 submitted 4 July, 2020; originally announced July 2020.

Comments: Published version, Phys. Rev. Reserach

Journal ref: Phys. Rev. Reserach 3, 043230 (2021)

Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport

Authors: Marc Vila, Jose H. Garcia, Aron W. Cummings, Stephen R. Power, Christoph W. Groth, Xavier Waintal, Stephan Roche

Abstract: Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptio… ▽ More Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. Here, we study these regimes by performing quantum simulations of graphene nonlocal spin valves. We find that conventional spin diffusion theory fails to capture the crossover to the ballistic regime as well as the limit of long spin diffusion length. We show that the latter can be described by an extension of the current theoretical framework. Finally, by covering the whole range of spin dynamics, our study opens a new perspective to predict and scrutinize spin transport in graphene and other two-dimensional material-based ultraclean devices. △ Less

Submitted 22 May, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 6 pages, 4 figures. Physical Review Letters

Journal ref: Phys. Rev. Lett. 124, 196602 (2020)

Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene

Authors: Thomas Aktor, Jose H. Garcia, Stephan Roche, Antti-Pekka Jauho, Stephen R. Power

Abstract: We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandga… ▽ More We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hBN superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene, and a route towards valley-dependent electron optics, by materials and device engineering. △ Less

Submitted 25 January, 2021; v1 submitted 1 October, 2019; originally announced October 2019.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 103, 115406 (2021)

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Authors: L. Antonio Benítez, Williams Savero Torres, Juan F. Sierra, Matias Timmermans, Jose H. Garcia, Stephan Roche, Marius V. Costache, Sergio O. Valenzuela

Abstract: Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demon… ▽ More Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession experiments in properly designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion effiencies can be tailored by electrostatic gating in magnitude and sign, peaking nearby the charge neutrality point with a magnitude that is comparable to the largest efficiencies reported to date. Such an unprecedented electric-field tunability provides a new building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies. △ Less

Submitted 21 August, 2019; originally announced August 2019.

Comments: 13 pages, 4 figures

Charge and Spin Transport Anisotropy in Nanopatterned Graphene

Authors: Soren Schou Gregersen, Jose H. Garcia, Antti-Pekka Jauho, Stephan Roche, Stephen R. Power

Abstract: Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural inhomogeneities. Here we theoretically explore how a random, yet homogeneous, distribution of zigzag-edged triangular perforations can generate spatial anisotropi… ▽ More Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural inhomogeneities. Here we theoretically explore how a random, yet homogeneous, distribution of zigzag-edged triangular perforations can generate spatial anisotropies in both charge and spin transport. Anisotropic electronic transport is found to persist under considerable disordering of the perforation edges, suggesting its viability under realistic experimental conditions. Furthermore, controlling the relative orientation of perforations enables spin filtering of the transmitted electrons, resulting in a half-metallic anisotropic transport regime. Our findings point towards a co-integration of charge and spin control in a two-dimensional platform of relevance for nanocircuit design. We further highlight how geometrical effects allow finite samples to display finite transverse resistances, reminiscent of Spin Hall effects, in the absence of any bulk fingerprints of such mechanisms, and explore the underlying symmetries behind this behaviour. △ Less

Submitted 6 December, 2018; originally announced December 2018.

Comments: 11 pages, 6 figures

Journal ref: J. Phys.: Mater. 1 (2018) 015005

Linear Scaling Quantum Transport Methodologies

Authors: Zheyong Fan, Jose Hugo Garcia, Aron W. Cummings, Jose Eduardo Barrios-Vargas, Michel Panhans, Ari Harju, Frank Ortmann, Stephan Roche

Abstract: In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. The simulation of quantum transport in realistic materials calls for the development of linear scaling, or order-$N$, numerical methods, which then become enabling tools… ▽ More In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. The simulation of quantum transport in realistic materials calls for the development of linear scaling, or order-$N$, numerical methods, which then become enabling tools for guiding experimental research and for supporting the interpretation of measurements. In this review, we describe and compare different order-$N$ computational methods that have been developed during the past twenty years, and which have been used extensively to explore quantum transport phenomena in disordered media. We place particular focus on the zero-frequency electrical conductivities derived within the Kubo-Greenwood and Kubo-Streda formalisms, and illustrate the capabilities of these methods to tackle the quasi-ballistic, diffusive, and localization regimes of quantum transport in the noninteracting limit. The fundamental issue of computational cost versus accuracy of various proposed numerical schemes is addressed in depth. We then illustrate the usefulness of these methods with various examples of transport in disordered materials, such as polycrystalline and defected graphene models, 3D metals and Dirac semimetals, carbon nanotubes, and organic semiconductors. Finally, we extend the review to the study of spin dynamics and topological transport, for which efficient approaches for calculating charge, spin, and valley Hall conductivities are described. △ Less

Submitted 20 August, 2020; v1 submitted 18 November, 2018; originally announced November 2018.

Comments: 54 pages, 31 figures, Invited Review of Physics Reports

Room temperature spin Hall effect in graphene/MoS$_2$ van der Waals heterostructures

Authors: C. K. Safeer, Josep Ingla-Aynés, Franz Herling, José H. Garcia, Marc Vila, Nerea Ontoso, M. Reyes Calvo, Stephan Roche, Luis E. Hueso, Fèlix Casanova

Abstract: Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic elec… ▽ More Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally spin Hall effect in graphene induced by MoS$_2$ proximity and for varying temperature up to room temperature. The fact that spin transport and spin Hall effect occur in different parts of the same material gives rise to a hitherto unreported efficiency for the spin-to-charge voltage output. Remarkably for a single graphene/MoS$_2$ heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS$_2$. By comparing our results to theoretical calculations, the latter scenario is found the most plausible one. Our findings pave the way towards the combination of spin information transport and spin-to-charge conversion in two-dimensional materials, opening exciting opportunities in a variety of future spintronic applications. △ Less

Submitted 29 October, 2018; originally announced October 2018.

Comments: 15 pages, 4 figures and Supporting Information

Journal ref: Nano Letters 19, 1074 (2019)

Shubnikov-de Haas oscillations in the anomalous Hall conductivity of Chern insulators

Authors: Luis M. Canonico, José H. García, Tatiana G. Rappoport, Aires Ferreira, R. B. Muniz

Abstract: The Haldane model on a honeycomb lattice is a paradigmatic example of a system featuring quantized Hall conductivity in the absence of an external magnetic field, that is, a quantum anomalous Hall effect. Recent theoretical work predicted that the anomalous Hall conductivity of massive Dirac fermions can display Shubnikov-de Haas (SdH) oscillations, which could be observed in topological insulator… ▽ More The Haldane model on a honeycomb lattice is a paradigmatic example of a system featuring quantized Hall conductivity in the absence of an external magnetic field, that is, a quantum anomalous Hall effect. Recent theoretical work predicted that the anomalous Hall conductivity of massive Dirac fermions can display Shubnikov-de Haas (SdH) oscillations, which could be observed in topological insulators and honeycomb layers with strong spin--orbit coupling. Here, we investigate the electronic transport properties of Chern insulators subject to high magnetic fields by means of accurate spectral expansions of lattice Green's functions. We find that the anomalous component of the Hall conductivity displays visible SdH oscillations at low temperature. \textcolor{black}{The effect is shown to result from the modulation of the next-nearest neighbour flux accumulation due to the Haldane term,} which removes the electron--hole symmetry from the Landau spectrum. To support our numerical findings, we derive a long-wavelength description beyond the linear ('Dirac cone') approximation. Finally, we discuss the dependence of the energy spectra shift for reversed magnetic fields with the topological gap and the lattice bandwidth. △ Less

Submitted 27 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. B 98, 085409 (2018)

Spin transport in graphene/transition metal dichalcogenide heterostructures

Authors: Jose H. Garcia, Marc Vila, Aron W. Cummings, Stephan Roche

Abstract: Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long distances. However, such outstanding transport properties also limit the capability to engineer active spintronics, where strong spin-orbit coupling is crucial for cr… ▽ More Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long distances. However, such outstanding transport properties also limit the capability to engineer active spintronics, where strong spin-orbit coupling is crucial for creating and manipulating spin currents. To this end, transition metal dichalcogenides, which have larger spin-orbit coupling and good interface matching, appear to be highly complementary materials for enhancing the spin-dependent features of graphene while maintaining its superior charge transport properties. In this review, we present the theoretical framework and the experiments performed to detect and characterize the spin-orbit coupling and spin currents in graphene/transition metal dichalcogenide heterostructures. Specifically, we will concentrate on recent measurements of Hanle precession, weak antilocalization and the spin Hall effect, and provide a comprehensive theoretical description of the interconnection between these phenomena. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Comments: 21 pages, 11 figures. This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright\c{opyright}American Chemical Society after peer review. To access the final edited and published work see http://pubs.rsc.org/en/Content/ArticleLanding/2018/CS/C7CS00864C

Journal ref: Chem. Soc. Rev., 2018,47, 3359-3379

Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures

Authors: Simon Zihlmann, Aron W. Cummings, Jose H. Garcia, Máté Kedves, Kenji Watanabe, Takashi Taniguchi, Christian Schönenberger, Péter Makk

Abstract: Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit coupling and its relaxation mechanism remained unknown. We show for the first time an increased spin-orbit coupling close to the charge neutrality po… ▽ More Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit coupling and its relaxation mechanism remained unknown. We show for the first time an increased spin-orbit coupling close to the charge neutrality point in graphene, where topological states are expected to appear. Single layer graphene encapsulated between the transition metal dichalcogenide WSe$_2$ and hBN is found to exhibit exceptional quality with mobilities as high as 100000 cm^2/V/s. At the same time clear weak anti-localization indicates strong spin-orbit coupling and a large spin relaxation anisotropy due to the presence of a dominating symmetric spin-orbit coupling is found. Do** dependent measurements show that the spin relaxation of the in-plane spins is largely dominated by a valley-Zeeman spin-orbit coupling and that the intrinsic spin-orbit coupling plays a minor role in spin relaxation. The strong spin-valley coupling opens new possibilities in exploring spin and valley degree of freedom in graphene with the realization of new concepts in spin manipulation. △ Less

Submitted 18 December, 2017; v1 submitted 15 December, 2017; originally announced December 2017.

Journal ref: Phys. Rev. B 97, 075434 (2018)

Quantum Hall Effect in Graphene with Interface-Induced Spin-Orbit Coupling

Authors: Tarik P. Cysne, Jose H. Garcia, Alexandre R. Rocha, Tatiana G. Rappoport

Abstract: We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analysing the spin-splitting of the quantum Hall states as a function of magnetic field and gate-voltage, we… ▽ More We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analysing the spin-splitting of the quantum Hall states as a function of magnetic field and gate-voltage, we obtain different scaling laws that can be used to characterise the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity. △ Less

Submitted 21 November, 2017; v1 submitted 13 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. B 97, 085413 (2018)

Spin Hall effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures

Authors: Jose H. Garcia, Aron W. Cummings, Stephan Roche

Abstract: We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocal-ization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. The graphene/WS 2 system is found to maximize spin proximity effects compared to graphe… ▽ More We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocal-ization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. The graphene/WS 2 system is found to maximize spin proximity effects compared to graphene on MoS 2 , WSe 2 , or MoSe 2 , with a crucial role played by disorder, given the disappearance of SHE signals in the presence of strong intervalley scattering. Notably, we found that stronger WAL effects are concomitant with weaker charge-to-spin conversion efficiency. For further experimental studies of graphene/TMDC heterostructures, our findings provide guidelines for reaching the upper limit of spin current formation and for fully harvesting the potential of two-dimensional materials for spintronic applications. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright\c{opyright}American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/articlesonrequest/AOR-c2pZ8WnmG7pcF4MIivjz

Journal ref: Nano Lett., 2017, 17 (8), pp 5078-5083

Origin of nonlocal resistance in multiterminal graphene on hexagonal-boron-nitride: Fermi surface edge currents rather than Fermi sea topological valley currents

Authors: J. M. Marmolejo-Tejada, J. H. García, M. Petrović, P. -H. Chang, X. -L. Sheng, A. Cresti, P. Plecháč, S. Roche, B. K. Nikolic

Abstract: The recent observation [R. V. Gorbachev et al., Science {\bf 346}, 448 (2014)] of nonlocal resistance $R_\mathrm{NL}$ near the Dirac point (DP) of multiterminal graphene on aligned hexagonal boron nitride (G/hBN) has been interpreted as the consequence of topological valley Hall currents carried by the Fermi sea states just beneath the bulk gap $E_g$ induced by the inversion symmetry breaking. How… ▽ More The recent observation [R. V. Gorbachev et al., Science {\bf 346}, 448 (2014)] of nonlocal resistance $R_\mathrm{NL}$ near the Dirac point (DP) of multiterminal graphene on aligned hexagonal boron nitride (G/hBN) has been interpreted as the consequence of topological valley Hall currents carried by the Fermi sea states just beneath the bulk gap $E_g$ induced by the inversion symmetry breaking. However, the valley Hall conductivity $σ^v_{xy}$, quantized inside $E_g$, is not directly measurable. Conversely, the Landauer-Büttiker formula, as numerically exact approach to observable nonlocal transport quantities, yields $R_\mathrm{NL} \equiv 0$ for the same simplistic Hamiltonian of gapped graphene that generates $σ^v_{xy} \neq 0$. We combine ab initio with quantum transport calculations to demonstrate that G/hBN wires with zigzag edges host dispersive edge states near the DP that are absent in theories based on the simplistic Hamiltonian. Although such edge states exist also in isolated zigzag graphene wires, aligned hBN is required to modify their energy-momentum dispersion and generate $R_\mathrm{NL} \neq 0$ near the DP persisting in the presence of edge disorder. Concurrently, the edge states resolve the long-standing puzzle of why the highly insulating state of G/hBN is rarely observed. We conclude that the observed $R_\mathrm{NL}$ is unrelated to Fermi sea topological valley currents conjectured for gapped Dirac spectra. △ Less

Submitted 15 January, 2018; v1 submitted 28 June, 2017; originally announced June 2017.

Comments: 6 pages, 4 figures, PDF LaTeX; Supplemental Material with 7 additional figures is available from https://wiki.physics.udel.edu/qttg/Publications

Journal ref: J. Phys.: Mater. 1, 015006 (2018)

Giant Spin Lifetime Anisotropy in Graphene Induced by Proximity Effects

Authors: Aron W. Cummings, Jose H. García, Jaroslav Fabian, Stephan Roche

Abstract: We report on fundamental aspects of spin dynamics in graphene interfaced with transition metal dichalcogenides (TMDCs). By using realistic models derived from first principles we compute the spin lifetime anisotropy, defined as the ratio of lifetimes for spins pointing out of the graphene plane to those pointing in the plane. In the presence of strong intervalley scattering the anisotropy can reac… ▽ More We report on fundamental aspects of spin dynamics in graphene interfaced with transition metal dichalcogenides (TMDCs). By using realistic models derived from first principles we compute the spin lifetime anisotropy, defined as the ratio of lifetimes for spins pointing out of the graphene plane to those pointing in the plane. In the presence of strong intervalley scattering the anisotropy can reach unprecedented values of tens to hundreds, while it reduces to 1/2 for weak disorder. This behavior is mediated by spin-valley locking, which is strong in TMDCs and is imprinted onto graphene. Such giant spin transport anisotropy, driven by proximity effects, provides an exciting paradigm for designing novel spin device functionalities. △ Less

Submitted 15 November, 2017; v1 submitted 31 May, 2017; originally announced May 2017.

Comments: 5 pages

Journal ref: Phys. Rev. Lett. 119, 206601 (2017)

Valley-Polarized Quantum Transport Generated by Gauge Fields in Graphene

Authors: Mikkel Settnes, José Hugo García, Stephan Roche

Abstract: We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a resonance/anti-resonance effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reve… ▽ More We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a resonance/anti-resonance effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a $e^2/h$ Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder. △ Less

Submitted 1 July, 2017; v1 submitted 25 May, 2017; originally announced May 2017.

Comments: 2D Materials (accepted for publication)

Journal ref: 2D Mater. 4 031006, (2017)

Charge, Spin and Valley Hall Effects in Disordered Graphene

Authors: Alessandro Cresti, Branislav K. Nikolić, Jose Hugo García, Stephan Roche

Abstract: The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of $e^2/h$, has been the first fascinating manifestation of the topological state of matter driven by magnetic field and disorder, and related to the formation of non-dissipative current flow. In 2005, several new phenomena such a… ▽ More The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of $e^2/h$, has been the first fascinating manifestation of the topological state of matter driven by magnetic field and disorder, and related to the formation of non-dissipative current flow. In 2005, several new phenomena such as the spin Hall effect and the quantum spin Hall effect were predicted in the presence of strong spin-orbit coupling and vanishing external magnetic field. More recently, the Zeeman spin Hall effect and the formation of valley Hall topological currents have been introduced for graphene-based systems, under time-reversal or inversion symmetry-breaking conditions, respectively. This review presents a comprehensive coverage of all these Hall effects in disordered graphene from the perspective of numerical simulations of quantum transport in two-dimensional bulk systems (by means of the Kubo formalism) and multiterminal nanostructures (by means of the Landauer-Büttiker scattering and nonequilibrium Green function approaches). In contrast to usual two-dimensional electron gases, the presence of defects in graphene generates more complex electronic features such as electron-hole asymmetry, defect resonances or percolation effect between localized impurity states, which, together with extra degrees of freedom (sublattice pseudospin, valley isospin), bring a higher degree of complexity and enlarge the transport phase diagram. △ Less

Submitted 31 October, 2016; originally announced October 2016.

Comments: to be published in La Rivista del Nuovo Cimento

Journal ref: Riv. Nuovo Cimento 39, 587 (2016)

Kubo-Bastin approach for the spin Hall conductivity of decorated graphene

Authors: Jose H. Garcia, Tatiana G. Rappoport

Abstract: Theoretical predictions and recent experimental results suggest one can engineer spin Hall effect in graphene by enhancing the spin-orbit coupling in the vicinity of an impurity. We use a Chebyshev expansion of the Kubo-Bastin formula to compute the spin conductivity tensor for a tight-binding model of graphene with randomly distributed impurities absorbed on top of carbon atoms. We model the impu… ▽ More Theoretical predictions and recent experimental results suggest one can engineer spin Hall effect in graphene by enhancing the spin-orbit coupling in the vicinity of an impurity. We use a Chebyshev expansion of the Kubo-Bastin formula to compute the spin conductivity tensor for a tight-binding model of graphene with randomly distributed impurities absorbed on top of carbon atoms. We model the impurity-induced spin-orbit coupling with a graphene-only Hamiltonian that takes into account three different contributions~\cite{Gmitra2013} and show how the spin Hall and longitudinal conductivities depend on the strength of each spin-orbit coupling and the concentration of impurities. Additionally, we calculate the real-space projection of the density of states in the vicinity of the Dirac point for single and multiple impurities and correlate these results with the conductivity calculations. △ Less

Submitted 15 February, 2016; originally announced February 2016.

Comments: 8 pages, 8 figures

Journal ref: 2D Materials 3, 024007 (2016)

Cloaking Resonant Scatterers and Tuning Electron Flow in Graphene

Authors: Diego Oliver, Jose H. Garcia, Tatiana G. Rappoport, N. M. R. Peres, Felipe A. Pinheiro

Abstract: We consider resonant scatterers with large scattering cross-sections in graphene that are produced by a gated disk or a vacancy, and show that a gated ring can be engineered to produce an efficient electron cloak. We also demonstrate that this same scheme can be applied to tune the direction of electron flow. Our analysis is based on a partial-wave expansion of the electronic wave-functions in the… ▽ More We consider resonant scatterers with large scattering cross-sections in graphene that are produced by a gated disk or a vacancy, and show that a gated ring can be engineered to produce an efficient electron cloak. We also demonstrate that this same scheme can be applied to tune the direction of electron flow. Our analysis is based on a partial-wave expansion of the electronic wave-functions in the continuum approximation, described by the Dirac equation. Using a symmetrized version of the massless Dirac equation, we derive a general condition for the cloaking of a scatterer by a potential with radial symmetry. We also perform tight-binding calculations to show that our findings are robust against the presence of disorder in the gate potential. △ Less

Submitted 7 February, 2015; originally announced February 2015.

Comments: 11 pages

Journal ref: Phys. Rev. B 91, 155416 (2015)

Real-space calculation of the conductivity tensor for disordered topological matter

Authors: Jose H. Garcia, Lucian Covaci, Tatiana G. Rappoport

Abstract: We describe an efficient numerical approach to calculate the longitudinal and transverse Kubo conductivities of large systems using Bastin's formulation. We expand the Green's functions in terms of Chebyshev polynomials and compute the conductivity tensor for any temperature and chemical potential in a single step. To illustrate the power and generality of the approach, we calculate the conductivi… ▽ More We describe an efficient numerical approach to calculate the longitudinal and transverse Kubo conductivities of large systems using Bastin's formulation. We expand the Green's functions in terms of Chebyshev polynomials and compute the conductivity tensor for any temperature and chemical potential in a single step. To illustrate the power and generality of the approach, we calculate the conductivity tensor for the quantum Hall effect in disordered graphene and analyze the effect of the disorder in a Chern insulator in Haldane's model on a honeycomb lattice. △ Less

Submitted 20 March, 2015; v1 submitted 29 October, 2014; originally announced October 2014.

Comments: 5 pages, 3 figures and a supplementary material (3 pages)

Journal ref: Phys. Rev. Lett. 114, 116602 (2015)

Adatoms and Anderson localization in graphene

Authors: Jose H. Garcia, Bruno Uchoa, Lucian Covaci, Tatiana G. Rappoport

Abstract: We address the nature of the disordered state that results from the adsorption of adatoms in graphene. For adatoms that sit at the center of the honeycomb plaquette, as in the case of most transition metals, we show that the ones that form a zero-energy resonant state lead to Anderson localization in the vicinity of the Dirac point. Among those, we show that there is a symmetry class of adatoms wh… ▽ More We address the nature of the disordered state that results from the adsorption of adatoms in graphene. For adatoms that sit at the center of the honeycomb plaquette, as in the case of most transition metals, we show that the ones that form a zero-energy resonant state lead to Anderson localization in the vicinity of the Dirac point. Among those, we show that there is a symmetry class of adatoms where Anderson localization is suppressed, leading to an exotic metallic state with large and rare charge droplets, that localizes only at the Dirac point. We identify the experimental conditions for the observation of the Anderson transition for adatoms in graphene. △ Less

Submitted 18 August, 2014; v1 submitted 9 September, 2013; originally announced September 2013.

Comments: 8 pages, 5 figures, 2 appendixes, Final version

Journal ref: Phys. Rev. B 90, 085425 (2014)