Room-Temperature Sputtered Ultralow-loss Silicon Nitride for Hybrid Photonic Integration
Authors:
Shuangyou Zhang,
Toby Bi,
Irina Harder,
Olga Lohse,
Florentina Gannott,
Alexander Gumann,
Yao**g Zhang,
Pascal Del'Haye
Abstract:
Silicon-nitride-on-insulator photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low pressure chemical vapor deposition (LPCVD) and high-temperature annealing (1200 °C). However, high processing temperature poses challenges to the cointegration of Si3…
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Silicon-nitride-on-insulator photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low pressure chemical vapor deposition (LPCVD) and high-temperature annealing (1200 °C). However, high processing temperature poses challenges to the cointegration of Si3N4 with pre-processed silicon electronic and photonic devices, lithium niobate on insulator (LNOI), and Ge-on-Si photodiodes. This limits LPCVD as a front-end-of-line process. Here, we demonstrate ultralow-loss Silicon nitride photonics based on room-temperature reactive sputtering. Propagation losses as low as 5.4 dB/m after 400 °C annealing and 3.5 dB/m after 800 °C annealing are achieved, enabling ring resonators with more than 10 million optical quality factors. To the best of our knowledge, these are the lowest propagation losses achieved with low temperature silicon nitride. This ultralow loss enables threshold powers for optical parametric oscillations to 1.1 mW and enables the generation of bright soliton frequency combs at 1.3 and 1.5 μm. Our work features a full complementary metal oxide semiconductor (CMOS) compatibility with front-end silicon electronics and photonics, and has the potential for hybrid 3D monolithic integration with III-V-on-Si integrated lasers, and LNOI.
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Submitted 25 January, 2023;
originally announced January 2023.
Silicon dual pillar structure with a distributed Bragg reflector for dielectric laser accelerators: Design and fabrication
Authors:
Peyman Yousefi,
Joshua McNeur,
Martin Kozák,
Uwe Niedermayer,
Florentina Gannott,
Olga Lohse,
Oliver Boine-Frankenheim,
Peter Hommelhoff
Abstract:
Dielectric laser accelerators (DLAs) have proven to be good candidates for miniaturized particle accelerators. They rely on micro-fabricated dielectrics which are able to modulate the kinetic energy of the incoming electron beam under a proper laser illumination. In this paper we demonstrate a dual pillar structure with a distributed Bragg reflector to mimic a double sided illumination to the elec…
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Dielectric laser accelerators (DLAs) have proven to be good candidates for miniaturized particle accelerators. They rely on micro-fabricated dielectrics which are able to modulate the kinetic energy of the incoming electron beam under a proper laser illumination. In this paper we demonstrate a dual pillar structure with a distributed Bragg reflector to mimic a double sided illumination to the electron path. The structure is fabricated by an electron beam lithography technique followed by a cryogenic reactive ion etching process. Such a structure can accelerate the injected 28 keV electrons by a gradient of approximately 150 MeV/m which can be further optimized towards the GeV/m regime.
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Submitted 25 October, 2018; v1 submitted 16 January, 2018;
originally announced January 2018.
