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Elucidating the role of electron transfer in the photoluminescence of $\mathrm{MoS_{2}}$ quantum dots synthesized by fs-pulse ablation
Authors:
Anubhab Sahoo,
Tejendra Dixit,
K. V. Anil Kumar,
K. Lakshmi Ganapathi,
Pramoda K. Nayak,
M. S. Ramachandra Rao,
Sivarama Krishnan
Abstract:
Herein, $\mathrm{MoS_{2}}$ quantum dot (QDs) with controlled optical, structural, and electronic properties are synthesized using the femtosecond pulsed laser ablation in liquid (fs-PLAL) technique by varying pulse-width, ablation power, and ablation time to harness the potential for next-generation optoelectronics and quantum technology. Furthermore, this work elucidates key aspects of the mechan…
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Herein, $\mathrm{MoS_{2}}$ quantum dot (QDs) with controlled optical, structural, and electronic properties are synthesized using the femtosecond pulsed laser ablation in liquid (fs-PLAL) technique by varying pulse-width, ablation power, and ablation time to harness the potential for next-generation optoelectronics and quantum technology. Furthermore, this work elucidates key aspects of the mechanisms underlying the near-UV and blue emission, the accompanying large Stokes-shift, and the consequent change in sample color with laser exposure parameters pertaining to $\mathrm{MoS_{2}}$ QDs. Through spectroscopic analysis, including UV-visible absorption, photoluminescence, and Raman spectroscopy, we successfully unravelled the mechanisms for the change in optoelectronic properties of $\mathrm{MoS_{2}}$ QDs with laser parameters. We realize that the occurrence of a secondary phase, specifically $\mathrm{MoO_{3-x}}$, is responsible for the significant Stokes-shift and blue emission observed in this QDs system. The primary factor influencing these activities is the electron transfer observed between these two phases, as validated by excitation dependent photoluminescence, XPS and Raman spectroscopies.
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Submitted 20 May, 2024;
originally announced May 2024.
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Probing defect states in few-layer MoS$_{2}$ by conductance fluctuation spectroscopy
Authors:
Suman Sarkar,
K. Lakshmi Ganapathi,
Sangeneni Mohan,
Aveek Bid
Abstract:
Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study of the temperature dependence of conductance and conductance-fluctuations on several few-layer MoS$_{2}$ exfoliated on hexagonal boron nitride and covered by a…
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Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study of the temperature dependence of conductance and conductance-fluctuations on several few-layer MoS$_{2}$ exfoliated on hexagonal boron nitride and covered by a cap** layer of high-$κ$ dielectric HfO$_{2}$. The presence of the high-$κ$ dielectric made the device extremely stable against environmental degradation as well as resistant to changes in device characteristics upon repeated thermal cycling enabling us to obtain reproducible data on the same device over a time-scale of more than one year. Our device architecture helped bring down the conductance fluctuations of the MoS$_2$ channel by orders of magnitude compared to previous reports. The extremely low noise levels in our devices made in possible to detect the generation-recombination noise arising from charge fluctuation between the sulphur-vacancy levels in the band gap and energy-levels at the conductance band-edge. Our work establishes conduction fluctuation spectroscopy as a viable route to quantitatively probe in-gap defect levels in low-dimensional semiconductors.
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Submitted 3 July, 2019;
originally announced July 2019.
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Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon
Authors:
Hareesh Chandrasekar,
Sandeep Kumar,
K. L. Ganapathi,
Shreesha Prabhu,
Surani Bin Dolmanan,
Sudhiranjan Tripathy,
Srinivasan Raghavan,
K. N. Bhat,
Sangeneni Mohan,
R. Muralidharan,
Navakanta Bhat,
Digbijoy N. Nath
Abstract:
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A conduction band offset of 1.9 eV is extracted for HfO2/GaN along with a very low density of fixed bulk and interfacial charges. Conductance measurements on HfO2/GaN MOSC…
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We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A conduction band offset of 1.9 eV is extracted for HfO2/GaN along with a very low density of fixed bulk and interfacial charges. Conductance measurements on HfO2/GaN MOSCAPs reveal an interface trap state continuum with a density of 9.37x1012 eV-1cm-2 centered at 0.48 eV below EC. The forward and reverse current densities are shown to be governed by Fowler-Nordheim tunneling and Poole-Frenkel emission respectively. Normally-ON HfO2/AlGaN/GaN MISHEMTs exhibit negligible shifts in threshold voltage, transconductances of 110mS/mm for 3 μm gate length devices, and three-terminal OFF-state gate leakage currents of 20 nA/mm at a VD of 100 V. Dynamic capacitance dispersion measurements show two peaks at the AlGaN/GaN interface corresponding to slow and fast interface traps with a peak Dit of 5.5x1013 eV-1cm-2 and 1.5x1013 eV-1cm-2 at trap levels 0.55 eV and 0.46 eV below EC respectively. The HfO2/AlGaN interface exhibits a peak Dit of 4.4x1013 eV-1cm- 2 at 0.45 eV below EC.
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Submitted 12 August, 2017;
originally announced August 2017.
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Surface States Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability
Authors:
Shubhadeep Bhattacharjee,
Kolla Lakshmi Ganapathi,
Digbijoy N. Nath,
Navakanta Bhat
Abstract:
Variability and lack of control in the nature of contacts between metal/MoS2 interface is a major bottleneck in the realisation of high-performance devices based on layered materials for several applications. In this letter, we report on the reduction in Schottky barrier height at metal/MoS2 interface by engineering the surface states through sulphur treatment. Electrical characteristics for back-…
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Variability and lack of control in the nature of contacts between metal/MoS2 interface is a major bottleneck in the realisation of high-performance devices based on layered materials for several applications. In this letter, we report on the reduction in Schottky barrier height at metal/MoS2 interface by engineering the surface states through sulphur treatment. Electrical characteristics for back-gated MoS2 field effect transistor structures were investigated for two high work-function metal contacts Ni and Pd. Contacts on MoS2 treated with sulphur exhibited significant improvements in Ohmic nature with concomitant reduction in variability compared to those on untreated MoS2 films leading to a 2x increase in extracted mobility. X-ray Photoelectron Spectroscopy (XPS) measurements, Raman Spectroscopy and comparison of threshold voltages indicated absence of additional do** or structural changes due to sulphur treatment. The Schottky barrier heights were extracted from temperature-dependent transfer characteristics based on the thermionic current model. A reduction in barrier height of 80 and 135 meV extracted for Ni/MoS2 and Pd/MoS2 contacts respectively is hence attributed to the increase in surface states (or stronger Fermi level pinning) due to sulphur treatment. The corresponding charge neutrality levels at metal/MoS2 interface, were extracted to be 0.16 eV (0.17 eV) below the conduction band before (after) Sulphur treatment. This first report of surface states engineering in MoS2 leading to superior contacts is expected to significantly benefit the entire class of devices based on layered 2D materials.
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Submitted 21 December, 2016; v1 submitted 16 August, 2015;
originally announced August 2015.
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Optical Phonon Limited High Field Transport in Layered Materials
Authors:
Hareesh Chandrasekar,
Kolla L. Ganapathi,
Shubhadeep Bhattacharjee,
Navakanta Bhat,
Digbijoy N. Nath
Abstract:
An optical phonon limited velocity model has been employed to investigate high-field transport in a selection of layered 2D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities and intrinsic cut-off frequencies as a function of carrier density have been predicted thus providing a benchmar…
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An optical phonon limited velocity model has been employed to investigate high-field transport in a selection of layered 2D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities and intrinsic cut-off frequencies as a function of carrier density have been predicted thus providing a benchmark for the optical phonon limited high-field performance limits of these materials. The optical phonon limited carrier velocities of a selection of transition metal dichalcogenides and black phosphorus are found to be modest as compared to their n-channel silicon counterparts, questioning the utility of these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency high-power devices, subject to experimental realization of high carrier densities, primarily due to its large optical phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with predicted values. Temperature dependence of measured vsat is discussed and found to fit a velocity saturation model with a single material dependent fit parameter.
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Submitted 12 August, 2015;
originally announced August 2015.
