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Coherent population trap** combined with cycling transitions for quantum dot hole spins using triplet trion states
Authors:
Samuel G. Carter,
Stefan C. Badescu,
Allan S. Bracker,
Michael K. Yakes,
Kha X. Tran,
Joel Q. Grim,
Daniel Gammon
Abstract:
Optical spin rotations and cycling transitions for measurement are normally incompatible in quantum dots, presenting a fundamental problem for quantum information applications. Here we show that for a hole spin this problem can be addressed using a trion with one hole in an excited orbital, where strong spin-orbit interaction tilts the spin. Then, a particular trion triplet forms a double $Λ$ syst…
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Optical spin rotations and cycling transitions for measurement are normally incompatible in quantum dots, presenting a fundamental problem for quantum information applications. Here we show that for a hole spin this problem can be addressed using a trion with one hole in an excited orbital, where strong spin-orbit interaction tilts the spin. Then, a particular trion triplet forms a double $Λ$ system, even in a Faraday magnetic field, which we use to demonstrate fast hole spin initialization and coherent population trap**. The lowest trion transitions still strongly preserve spin, thus combining fast optical spin control with cycling transitions for spin readout.
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Submitted 8 December, 2020;
originally announced December 2020.
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Direct high resolution resonant Raman scattering measurements of InAs quantum dot dynamic nuclear spin polarization states
Authors:
Aaron M. Ross,
Allan S. Bracker,
Michael K. Yakes,
Daniel Gammon,
L. J. Sham,
Duncan G. Steel
Abstract:
We report on the direct measurement of the electron spin splitting and the accompanying nuclear Overhauser (OH) field, and thus the underlying nuclear spin polarization (NSP) and fluctuation bandwidth, in a single InAs quantum dot under resonant excitation conditions with unprecedented spectral resolution. The electron spin splitting is measured directly via resonant spin-flip single photon Raman…
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We report on the direct measurement of the electron spin splitting and the accompanying nuclear Overhauser (OH) field, and thus the underlying nuclear spin polarization (NSP) and fluctuation bandwidth, in a single InAs quantum dot under resonant excitation conditions with unprecedented spectral resolution. The electron spin splitting is measured directly via resonant spin-flip single photon Raman scattering detected by superconducting nanowires to generate excitation-emission energy maps. The observed two-dimensional maps reveal an OH field that has a non-linear dependence on excitation frequency. This study provides new insight into earlier reports of so-called avoidance and tracking, showing two distinct NSP responses directly by the addition of a emission energy axis. The data show that the polarization processes depend on which electron spin state is optically driven, with surprising differences in the polarization fluctuations for each case: in one case, a stabilized field characterized by a single-peaked distribution shifts monotonically with the laser excitation frequency resulting in a nearly constant optical interaction strength across a wide detuning range, while in the other case the previously reported avoidance behavior is actually the result of a nonlinear dependence on the laser excitation frequency near zero detuning leading to switching between two distinct mesoscopic nuclear spin states. The magnitude of the field, which is as large as 400 mT, is measured with sub-100 nuclear spin sensitivity. Stable/unstable points of the OH field distribution are observed, resulting from the non-linear feedback loop in the electron-trion-nuclear system. Nuclear spin polarization state switching occurs between fields differing by 160 mT at least as fast as 25 ms. Control experiments indicate that the strain-induced quadrupolar interaction may explain the measured OH fields.
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Submitted 26 November, 2020;
originally announced November 2020.
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Spectral broadening of optical transitions at tunneling resonances in InAs/GaAs coupled quantum dot pairs
Authors:
P. Kumar,
C. Jennings,
M. Scheibner,
A. S. Bracker,
S. G. Carter,
D. Gammon
Abstract:
We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $μ$eV is observed at hole tunneling resonances where the coherent tunnel coupling between spatially direct and indirect exciton states is maximized, corresponding to a phonon-assisted transition ra…
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We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $μ$eV is observed at hole tunneling resonances where the coherent tunnel coupling between spatially direct and indirect exciton states is maximized, corresponding to a phonon-assisted transition rate of 150 ns${}^{-1}$ at 20 K. With increasing temperature, the linewidth shows broadening characteristic of single-phonon transitions. The linewidth as a function of tunnel coupling strength tracks the theoretical prediction of linewidth broadening due to phonon-assisted transitions, and is maximized with an energy splitting between the two exciton branches of 0.8$-$0.9 meV. This report highlights the linewidth broadening mechanisms and fundamental aspects of the interaction between these systems and the local environment.
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Submitted 11 August, 2020; v1 submitted 5 March, 2020;
originally announced March 2020.
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A spin-photon interface using charge-tunable quantum dots strongly coupled to a cavity
Authors:
Zhouchen Luo,
Shuo Sun,
Aziz Karasahin,
Michael K. Yakes,
Samuel G. Carter,
Allan S. Bracker,
Daniel Gammon,
Edo Waks
Abstract:
Charged quantum dots containing an electron or hole spin are bright solid-state qubits suitable for quantum networks and distributed quantum computing. Incorporating such quantum dot spin into a photonic crystal cavity creates a strong spin-photon interface, in which the spin can control a photon by modulating the cavity reflection coefficient. However, previous demonstrations of such spin-photon…
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Charged quantum dots containing an electron or hole spin are bright solid-state qubits suitable for quantum networks and distributed quantum computing. Incorporating such quantum dot spin into a photonic crystal cavity creates a strong spin-photon interface, in which the spin can control a photon by modulating the cavity reflection coefficient. However, previous demonstrations of such spin-photon interfaces have relied on quantum dots that are charged randomly by nearby impurities, leading to instability in the charge state, which causes poor contrast in the cavity reflectivity. Here we demonstrate a strong spin-photon interface using a quantum dot that is charged deterministically with a diode structure. By incorporating this actively charged quantum dot in a photonic crystal cavity, we achieve strong coupling between the cavity mode and the negatively charged state of the dot. Furthermore, by initializing the spin through optical pum**, we show strong spin-dependent modulation of the cavity reflectivity, corresponding to a cooperativity of 12. This spin-dependent reflectivity is important for mediating entanglement between spins using photons, as well as generating strong photon-photon interactions for applications in quantum networking and distributed quantum computing.
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Submitted 25 June, 2019;
originally announced June 2019.
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Direct Excitation of a Single Quantum Dot with Cavity-SPDC Photons
Authors:
Uttam Paudel,
Jia Jun Wong,
Michael Goggin,
Paul Kwiat,
Allan S. Bracker,
Michael Yakes,
Daniel Gammon,
Duncan Steel
Abstract:
The ability to generate mode-engineered single photons to interface with disparate quantum systems is of importance for building a quantum network. Here we report on the generation of a pulsed, heralded single photon source with a sub-GHz spectral bandwidth that couples to indium arsenide quantum dots centered at 942 nm. The source is built with a type-II PPKTP down-conversion crystal embedded in…
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The ability to generate mode-engineered single photons to interface with disparate quantum systems is of importance for building a quantum network. Here we report on the generation of a pulsed, heralded single photon source with a sub-GHz spectral bandwidth that couples to indium arsenide quantum dots centered at 942 nm. The source is built with a type-II PPKTP down-conversion crystal embedded in a semi-confocal optical cavity and pumped with a 76 MHz repetition rate pulsed laser to emit collinear, polarization-correlated photon pairs resonant with a single quantum dot. In order to demonstrate direct coupling, we use the mode-engineered cavity-SPDC single-photon source to resonantly excite an isolated single quantum dot.
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Submitted 24 May, 2019; v1 submitted 17 December, 2018;
originally announced December 2018.
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Spin-selective AC Stark shifts in a charged quantum dot
Authors:
Tristan A. Wilkinson,
Dillion J. Cottrill,
Joshua M. Cramlet,
Cole E. Maurer,
Collin J. Flood,
Allan S. Bracker,
Michael Yakes,
Dan Gammon,
Edward B. Flagg
Abstract:
A strong, far-detuned laser can shift the energy levels of an optically active quantum system via the AC Stark effect. We demonstrate that the polarization of the laser results in a spin-selective modification to the energy structure of a charged quantum dot, shifting one spin manifold but not the other. An additional shift occurs due to the Overhauser field of the nuclear spins, which are pumped…
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A strong, far-detuned laser can shift the energy levels of an optically active quantum system via the AC Stark effect. We demonstrate that the polarization of the laser results in a spin-selective modification to the energy structure of a charged quantum dot, shifting one spin manifold but not the other. An additional shift occurs due to the Overhauser field of the nuclear spins, which are pumped into a partially polarized state. This mechanism offers a potentially rapid, reversible, and coherent control of the energy structure and polarization selection rules of a charged quantum dot.
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Submitted 17 December, 2018; v1 submitted 5 December, 2018;
originally announced December 2018.
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Scalable in operando strain tuning in nanophotonic waveguides enabling three-quantum dot superradiance
Authors:
Joel Q. Grim,
Allan S. Bracker,
Maxim Zalalutdinov,
Samuel G. Carter,
Alexander C. Kozen,
Mi** Kim,
Chul Soo Kim,
Jerome T. Mlack,
Michael Yakes,
Bumsu Lee,
Daniel Gammon
Abstract:
The quest for an integrated quantum optics platform has motivated the field of semiconductor quantum dot research for two decades. Demonstrations of quantum light sources, single photon switches, transistors, and spin-photon interfaces have become very advanced. Yet the fundamental problem that every quantum dot is different prevents integration and scaling beyond a few quantum dots. Here, we addr…
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The quest for an integrated quantum optics platform has motivated the field of semiconductor quantum dot research for two decades. Demonstrations of quantum light sources, single photon switches, transistors, and spin-photon interfaces have become very advanced. Yet the fundamental problem that every quantum dot is different prevents integration and scaling beyond a few quantum dots. Here, we address this challenge by patterning strain via local phase transitions to selectively tune individual quantum dots that are embedded in a photonic architecture. The patterning is implemented with in operando laser crystallization of a thin HfO$_{2}$ film "sheath" on the surface of a GaAs waveguide. Using this approach, we tune InAs quantum dot emission energies over the full inhomogeneous distribution with a step size down to the homogeneous linewidth and a spatial resolution better than 1 $μ$m. Using these capabilities, we tune multiple quantum dots into resonance within the same waveguide and demonstrate a quantum interaction via superradiant emission from three quantum dots.
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Submitted 7 January, 2020; v1 submitted 11 October, 2018;
originally announced October 2018.
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Generation of frequency sidebands on single photons with indistinguishability from quantum dots
Authors:
Uttam Paudel,
Alexander P. Burgers,
Michael K. Yakes,
Allan S. Bracker,
Daniel Gammon,
Duncan G. Steel
Abstract:
Generation and manipulation of the quantum state of a single photon is at the heart of many quantum information protocols. There has been growing interest in using phase modulators as quantum optics devices that preserve coherence. In this Letter, we have used an electro-optic phase modulator to shape the state vector of single photons emitted by a quantum dot to generate new frequency components…
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Generation and manipulation of the quantum state of a single photon is at the heart of many quantum information protocols. There has been growing interest in using phase modulators as quantum optics devices that preserve coherence. In this Letter, we have used an electro-optic phase modulator to shape the state vector of single photons emitted by a quantum dot to generate new frequency components (modes) and explicitly demonstrate that the phase modulation process agrees with the theoretical prediction at a single photon level. Through two-photon interference measurements we show that for an output consisting of three modes (the original mode and two sidebands), the indistinguishability of the mode engineered photon, measured through the secondorder intensity correlation (g2(0)) is preserved. This work demonstrates a robust means to generate a photonic qubit or more complex state (e.g., a qutrit) for quantum communication applications by encoding information in the sidebands without the loss of coherence.
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Submitted 24 June, 2018; v1 submitted 22 June, 2017;
originally announced June 2017.
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Non-local nuclear spin quieting in quantum dot molecules: Optically-induced extended two-electron spin coherence time
Authors:
Colin M. Chow,
Aaron M. Ross,
Danny Kim,
Daniel Gammon,
Allan S. Bracker,
L. J. Sham,
Duncan G. Steel
Abstract:
We demonstrate the extension of coherence between all four two-electron spin ground states of an InAs quantum dot molecule (QDM) via non-local suppression of nuclear spin fluctuations in both constituent quantum dots (QDs), while optically addressing only the upper QD transitions. Long coherence times are revealed through dark-state spectroscopy as resulting from nuclear spin locking mediated by t…
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We demonstrate the extension of coherence between all four two-electron spin ground states of an InAs quantum dot molecule (QDM) via non-local suppression of nuclear spin fluctuations in both constituent quantum dots (QDs), while optically addressing only the upper QD transitions. Long coherence times are revealed through dark-state spectroscopy as resulting from nuclear spin locking mediated by the exchange interaction between the QDs. Lineshape analysis provides the first measurement of the quieting of the Overhauser field distribution correlating with reduced nuclear spin fluctuations.
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Submitted 15 December, 2015;
originally announced December 2015.
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Cavity-stimulated Raman emission from a single quantum dot spin
Authors:
Timothy M. Sweeney,
Samuel G. Carter,
Allan S. Bracker,
Mi** Kim,
Chul Soo Kim,
Lily Yang,
Patrick Vora,
Peter G. Brereton,
Erin R. Cleveland,
Daniel Gammon
Abstract:
Solid state quantum emitters have shown strong potential for applications in quantum information, but spectral inhomogeneity of these emitters poses a significant challenge. We address this issue in a cavity-quantum dot system by demonstrating cavity-stimulated Raman spin flip emission. This process avoids populating the excited state of the emitter and generates a photon that is Raman shifted fro…
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Solid state quantum emitters have shown strong potential for applications in quantum information, but spectral inhomogeneity of these emitters poses a significant challenge. We address this issue in a cavity-quantum dot system by demonstrating cavity-stimulated Raman spin flip emission. This process avoids populating the excited state of the emitter and generates a photon that is Raman shifted from the laser and enhanced by the cavity. The emission is spectrally narrow and tunable over a range of at least 125 GHz, which is two orders of magnitude greater than the natural linewidth. We obtain the regime in which the Raman emission is spin-dependent, which couples the photon to a long-lived electron spin qubit. This process can enable an efficient, tunable source of indistinguishable photons and deterministic entanglement of distant spin qubits in a photonic crystal quantum network.
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Submitted 18 February, 2014;
originally announced February 2014.
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Strong Hyperfine-Induced Modulation of an Optically-Driven Hole Spin in an InAs Quantum Dot
Authors:
Samuel G. Carter,
Sophia E. Economou,
Alex Greilich,
Edwin Barnes,
Timothy M. Sweeney,
Allan S. Bracker,
Daniel Gammon
Abstract:
Compared to electrons, holes in InAs quantum dots have a significantly weaker hyperfine interaction that leads to less dephasing from nuclear spins. Thus many recent studies have suggested that nuclear spins are unimportant for hole spin dynamics compared to electric field fluctuations. We show that the hole hyperfine interaction can have a strong effect on hole spin coherence measurements through…
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Compared to electrons, holes in InAs quantum dots have a significantly weaker hyperfine interaction that leads to less dephasing from nuclear spins. Thus many recent studies have suggested that nuclear spins are unimportant for hole spin dynamics compared to electric field fluctuations. We show that the hole hyperfine interaction can have a strong effect on hole spin coherence measurements through a nuclear feedback effect. The nuclear polarization is generated through a unique process that is dependent on the anisotropy of the hole hyperfine interaction and the coherent precession of nuclear spins, giving rise to strong modulation at the nuclear precession frequency.
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Submitted 26 September, 2013; v1 submitted 11 July, 2013;
originally announced July 2013.
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Quantum control of a spin qubit coupled to a photonic crystal cavity
Authors:
Samuel G. Carter,
Timothy M. Sweeney,
Mi** Kim,
Chul Soo Kim,
Dmitry Solenov,
Sophia E. Economou,
Thomas L. Reinecke,
Lily Yang,
Allan S. Bracker,
Daniel Gammon
Abstract:
A key ingredient for a quantum network is an interface between stationary quantum bits and photons, which act as flying qubits for interactions and communication. Photonic crystal architectures are promising platforms for enhancing the coupling of light to solid state qubits. Quantum dots can be integrated into a photonic crystal, with optical transitions coupling to photons and spin states formin…
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A key ingredient for a quantum network is an interface between stationary quantum bits and photons, which act as flying qubits for interactions and communication. Photonic crystal architectures are promising platforms for enhancing the coupling of light to solid state qubits. Quantum dots can be integrated into a photonic crystal, with optical transitions coupling to photons and spin states forming a long-lived quantum memory. Many researchers have now succeeded in coupling these emitters to photonic crystal cavities, but there have been no demonstrations of a functional spin qubit and quantum gates in this environment. Here we have developed a coupled cavity-quantum dot system in which the dot is controllably charged with a single electron. We perform the initialization, rotation and measurement of a single electron spin qubit using laser pulses and find that the cavity can significantly improve these processes.
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Submitted 19 November, 2012;
originally announced November 2012.
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Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon
Authors:
J. R. Schaibley,
A. P. Burgers,
G. A. McCracken,
L. -M. Duan,
P. R. Berman,
D. G. Steel,
A. S. Bracker,
D. Gammon,
L. J. Sham
Abstract:
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this letter, we report an all optical experimental demonstration of qua…
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The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3 x 10^3 s^-1. This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.
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Submitted 13 March, 2013; v1 submitted 19 October, 2012;
originally announced October 2012.
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Scalable qubit architecture based on holes in quantum dot molecules
Authors:
Sophia E. Economou,
Juan I. Climente,
Antonio Badolato,
Allan S. Bracker,
Daniel Gammon,
Matthew F. Doty
Abstract:
Spins confined in quantum dots are a leading candidate for solid-state quantum bits that can be coherently controlled by optical pulses. There are, however, many challenges to develo** a scalable multibit information processing device based on spins in quantum dots, including the natural inhomogeneous distribution of quantum dot energy levels, the difficulty of creating all-optical spin manipula…
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Spins confined in quantum dots are a leading candidate for solid-state quantum bits that can be coherently controlled by optical pulses. There are, however, many challenges to develo** a scalable multibit information processing device based on spins in quantum dots, including the natural inhomogeneous distribution of quantum dot energy levels, the difficulty of creating all-optical spin manipulation protocols compatible with nondestructive readout, and the substantial electron-nuclear hyperfine interaction-induced decoherence. Here, we present a scalable qubit design and device architecture based on the spin states of single holes confined in a quantum dot molecule. The quantum dot molecule qubit enables a new strategy for optical coherent control with dramatically enhanced wavelength tunability. The use of hole spins allows the suppression of decoherence via hyperfine interactions and enables coherent spin rotations using Raman transitions mediated by a hole-spin-mixed optically excited state. Because the spin mixing is present only in the optically excited state, dephasing and decoherence are strongly suppressed in the ground states that define the qubits and nondestructive readout is possible. We present the qubit and device designs and analyze the wavelength tunability and fidelity of gate operations that can be implemented using this strategy. We then present experimental and theoretical progress toward implementing this design.
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Submitted 24 September, 2012;
originally announced September 2012.
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Optical measurement and modeling of interactions between two hole or two electron spins in coupled InAs quantum dots
Authors:
Alex Greilich,
Ştefan C. Bădescu,
Danny Kim,
Allan S. Bracker,
Daniel Gammon
Abstract:
Two electron spins in quantum dots coupled through coherent tunneling are generally acknowledged to approximately obey Heisenberg isotropic exchange. This has not been established for two holes. Here we measure the spectra of two holes and of two electrons in two vertically stacked self-assembled InAs quantum dots using optical spectroscopy as a function of electric and magnetic fields. We find th…
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Two electron spins in quantum dots coupled through coherent tunneling are generally acknowledged to approximately obey Heisenberg isotropic exchange. This has not been established for two holes. Here we measure the spectra of two holes and of two electrons in two vertically stacked self-assembled InAs quantum dots using optical spectroscopy as a function of electric and magnetic fields. We find that the exchange is approximately isotropic for both systems, but that significant asymmetric contributions, arising from spin-orbit and Zeeman interactions combined with spatial asymmetries, are required to explain large anticrossings and fine-structure energy splittings in the spectra. Asymmetric contributions to the isotropic Hamiltonian for electrons are of the order of a few percent while those for holes are an order of magnitude larger.
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Submitted 7 February, 2013; v1 submitted 5 September, 2012;
originally announced September 2012.
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Persistent narrowing of nuclear-spin fluctuations in InAs quantum dots using laser excitation
Authors:
Bo Sun,
Colin Ming Earn Chow,
Duncan G. Steel,
Allan S. Bracker,
Daniel Gammon,
L. J. Sham
Abstract:
We demonstrate the suppression of nuclear spin fluctuations in an InAs quantum dot and measure the timescales of the spin narrowing effect. By initializing for tens of milliseconds with two continuous wave diode lasers, fluctuations of the nuclear spins are suppressed via the hole assisted dynamic nuclear polarization feedback mechanism. The fluctuation narrowed state persists in the dark (absent…
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We demonstrate the suppression of nuclear spin fluctuations in an InAs quantum dot and measure the timescales of the spin narrowing effect. By initializing for tens of milliseconds with two continuous wave diode lasers, fluctuations of the nuclear spins are suppressed via the hole assisted dynamic nuclear polarization feedback mechanism. The fluctuation narrowed state persists in the dark (absent light illumination) for well over one second even in the presence of a varying electron charge and spin polarization. Enhancement of the electron spin coherence time (T2*) is directly measured using coherent dark state spectroscopy. By separating the calming of the nuclear spins in time from the spin qubit operations, this method is much simpler than the spin echo coherence recovery or dynamic decoupling schemes.
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Submitted 21 March, 2012;
originally announced March 2012.
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Optical control of one and two hole spins in interacting quantum dots
Authors:
Alex Greilich,
Samuel G. Carter,
Danny Kim,
Allan S. Bracker,
Daniel Gammon
Abstract:
A single hole spin in a semiconductor quantum dot has emerged as a quantum bit that is potentially superior to an electron spin. A key feature of holes is that they have a greatly reduced hyperfine interaction with nuclear spins, which is one of the biggest difficulties in working with an electron spin. It is now essential to show that holes are viable for quantum information processing by demonst…
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A single hole spin in a semiconductor quantum dot has emerged as a quantum bit that is potentially superior to an electron spin. A key feature of holes is that they have a greatly reduced hyperfine interaction with nuclear spins, which is one of the biggest difficulties in working with an electron spin. It is now essential to show that holes are viable for quantum information processing by demonstrating fast quantum gates and scalability. To this end we have developed InAs/GaAs quantum dots coupled through coherent tunneling and charged with controlled numbers of holes. We report fast, single qubit gates using a sequence of short laser pulses. We then take the important next step toward scalability of quantum information by optically controlling two interacting hole spins in separate dots.
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Submitted 1 July, 2011;
originally announced July 2011.
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Ultrafast optical control of entanglement between two quantum dot spins
Authors:
Danny Kim,
Samuel G. Carter,
Alex Greilich,
Allan Bracker,
Daniel Gammon
Abstract:
The interaction between two quantum bits enables entanglement, the two-particle correlations that are at the heart of quantum information science. In semiconductor quantum dots much work has focused on demonstrating single spin qubit control using optical techniques. However, optical control of entanglement of two spin qubits remains a major challenge for scaling from a single qubit to a full-fled…
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The interaction between two quantum bits enables entanglement, the two-particle correlations that are at the heart of quantum information science. In semiconductor quantum dots much work has focused on demonstrating single spin qubit control using optical techniques. However, optical control of entanglement of two spin qubits remains a major challenge for scaling from a single qubit to a full-fledged quantum information platform. Here, we combine advances in vertically-stacked quantum dots with ultrafast laser techniques to achieve optical control of the entangled state of two electron spins. Each electron is in a separate InAs quantum dot, and the spins interact through tunneling, where the tunneling rate determines how rapidly entangling operations can be performed. The two-qubit gate speeds achieved here are over an order of magnitude faster than in other systems. These results demonstrate the viability and advantages of optically controlled quantum dot spins for multi-qubit systems.
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Submitted 21 July, 2010;
originally announced July 2010.
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Fast spin rotations by optically controlled geometric phases in a quantum dot
Authors:
Erik D. Kim,
Katherine Truex,
Xiaodong Xu,
Bo Sun,
D. G. Steel,
A. S. Bracker,
D. Gammon,
L. J. Sham
Abstract:
We demonstrate optical control of the geometric phase acquired by one of the spin states of an electron confined in a charge-tunable InAs quantum dot via cyclic 2pi excitations of an optical transition in the dot. In the presence of a constant in-plane magnetic field, these optically induced geometric phases result in the effective rotation of the spin about the magnetic field axis and manifest…
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We demonstrate optical control of the geometric phase acquired by one of the spin states of an electron confined in a charge-tunable InAs quantum dot via cyclic 2pi excitations of an optical transition in the dot. In the presence of a constant in-plane magnetic field, these optically induced geometric phases result in the effective rotation of the spin about the magnetic field axis and manifest as phase shifts in the spin quantum beat signal generated by two time-delayed circularly polarized optical pulses. The geometric phases generated in this manner more generally perform the role of a spin phase gate, proving potentially useful for quantum information applications.
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Submitted 24 February, 2010; v1 submitted 27 October, 2009;
originally announced October 2009.
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Hole Spin Mixing in InAs Quantum Dot Molecules
Authors:
M. F. Doty,
J. I. Climente,
A. Greilich,
A. S. Bracker,
D. Gammon
Abstract:
Holes confined in single InAs quantum dots have recently emerged as a promising system for the storage or manipulation of quantum information. These holes are often assumed to have only heavy-hole character and further assumed to have no mixing between orthogonal heavy hole spin projections (in the absence of a transverse magnetic field). The same assumption has been applied to InAs quantum dot…
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Holes confined in single InAs quantum dots have recently emerged as a promising system for the storage or manipulation of quantum information. These holes are often assumed to have only heavy-hole character and further assumed to have no mixing between orthogonal heavy hole spin projections (in the absence of a transverse magnetic field). The same assumption has been applied to InAs quantum dot molecules formed by two stacked InAs quantum dots that are coupled by coherent tunneling of the hole between the two dots. We present experimental evidence of the existence of a hole spin mixing term obtained with magneto-photoluminescence spectroscopy on such InAs quantum dot molecules. We use a Luttinger spinor model to explain the physical origin of this hole spin mixing term: misalignment of the dots along the stacking direction breaks the angular symmetry and allows mixing through the light-hole component of the spinor. We discuss how this novel spin mixing mechanism may offer new spin manipulation opportunities that are unique to holes.
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Submitted 10 August, 2009;
originally announced August 2009.
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All-Optical Ultrafast Control and Read-Out of a Single Negatively Charged Self-Assembled InAs Quantum Dot
Authors:
Erik D. Kim,
Katherine Smirl,
Yanwen Wu,
A. Amo,
Xiaodong Xu,
D. G. Steel,
A. S. Bracker,
D. Gammon,
L. J. Sham
Abstract:
We demonstrate the all-optical ultrafast manipulation and read-out of optical transitions in a single negatively charged self-assembled InAs quantum dot, an important step towards ultrafast control of the resident spin. Experiments performed at zero magnetic field show the excitation and decay of the trion (negatively charged exciton) as well as Rabi oscillations between the electron and trion s…
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We demonstrate the all-optical ultrafast manipulation and read-out of optical transitions in a single negatively charged self-assembled InAs quantum dot, an important step towards ultrafast control of the resident spin. Experiments performed at zero magnetic field show the excitation and decay of the trion (negatively charged exciton) as well as Rabi oscillations between the electron and trion states. Application of a DC magnetic field perpendicular to the growth axis of the dot enables observation of a complex quantum beat structure produced by independent precession of the ground state electron and the excited state heavy hole spins.
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Submitted 3 May, 2009;
originally announced May 2009.
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Characterization of the Shell Structure in Coupled Quantum Dots through Resonant Optical Probing
Authors:
Mauricio Garrido,
Kushal C. Wijesundara,
Swati Ramanathan,
E. A. Stinaff,
M. Scheibner,
A. S. Bracker,
D. Gammon
Abstract:
Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present initial results from photoluminescence excitation studies of excited states in coupled quantum dots (CQDs). Due to the rich set of possible excitation and reco…
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Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present initial results from photoluminescence excitation studies of excited states in coupled quantum dots (CQDs). Due to the rich set of possible excitation and recombination possibilities, a technique for visualizing photoluminescence excitation in coupled quantum dots is discussed, by which both the interaction between the dots and the type of absorption and emission that generated the photoluminescence is easily and clearly revealed. As an example, this technique is applied to characterize the shell structure of the hole in the top dot and the results are compared with those using Level Anti-Crossing Spectroscopy (LACS).
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Submitted 12 March, 2009; v1 submitted 29 January, 2009;
originally announced January 2009.
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Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots
Authors:
Kushal C. Wijesundara,
Mauricio Garrido,
Swati Ramanathan,
E. A. Stinaff,
M. Scheibner,
A. S. Bracker,
D. Gammon
Abstract:
Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin control. Polarization dependent photoluminescence (PL) spectra were used to investigate the spin dependent interactions in coupled quantum dot systems and by var…
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Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin control. Polarization dependent photoluminescence (PL) spectra were used to investigate the spin dependent interactions in coupled quantum dot systems and by varying an electric field, the ground state hole energy levels are brought into resonance, resulting in the formation of molecular orbitals observed as anticrossings between the direct and indirect transitions in the spectra. The indirect and direct transitions of the neutral exciton demonstrate high and low circular polarization memory respectively due to variation in the exchange interaction. The ratio between the polarization values as a function of electric field, and the barrier height was measured. These results indicate a possible method of tuning between indirect and direct configurations to control the degree of exchange interaction.
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Submitted 29 January, 2009;
originally announced January 2009.
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Fine structure and optical pum** of spins in individual semiconductor quantum dots
Authors:
Allan S. Bracker,
Daniel Gammon,
Vladimir L. Korenev
Abstract:
We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advan…
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We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pum** of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.
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Submitted 10 September, 2008;
originally announced September 2008.
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Optical Spin Initialization and Non-Destructive Measurement in a Quantum Dot Molecule
Authors:
Danny Kim,
Sophia E. Economou,
Stefan C. Badescu,
Michael Scheibner,
Allan S. Bracker,
Mark Bashkansky,
Thomas L. Reinecke,
Daniel Gammon
Abstract:
The spin of an electron in a self-assembled InAs/GaAs quantum dot molecule is optically prepared and measured through the trion triplet states. A longitudinal magnetic field is used to tune two of the trion states into resonance, forming a superposition state through asymmetric spin exchange. As a result, spin-flip Raman transitions can be used for optical spin initialization, while separate tri…
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The spin of an electron in a self-assembled InAs/GaAs quantum dot molecule is optically prepared and measured through the trion triplet states. A longitudinal magnetic field is used to tune two of the trion states into resonance, forming a superposition state through asymmetric spin exchange. As a result, spin-flip Raman transitions can be used for optical spin initialization, while separate trion states enable cycling transitions for non-destructive measurement. With two-laser transmission spectroscopy we demonstrate both operations simultaneously, something not previously accomplished in a single quantum dot.
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Submitted 23 October, 2008; v1 submitted 9 September, 2008;
originally announced September 2008.
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Coherent Population Trap** of an Electron Spin in a Single Negatively Charged Quantum Dot
Authors:
Xiaodong Xu,
Bo Sun,
Paul R. Berman,
Duncan G. Steel,
Allan S. Bracker,
Dan Gammon,
L. J. Sham
Abstract:
Coherent population trap** (CPT) refers to the steady-state trap** of population in a coherent superposition of two ground states which are coupled by coherent optical fields to an intermediate state in a three-level atomic system. Recently, CPT has been observed in an ensemble of donor bound spins in GaAs and in single nitrogen vacancy centers in diamond by using a fluorescence technique. H…
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Coherent population trap** (CPT) refers to the steady-state trap** of population in a coherent superposition of two ground states which are coupled by coherent optical fields to an intermediate state in a three-level atomic system. Recently, CPT has been observed in an ensemble of donor bound spins in GaAs and in single nitrogen vacancy centers in diamond by using a fluorescence technique. Here we report the demonstration of CPT of an electron spin in a single quantum dot (QD) charged with one electron.
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Submitted 14 May, 2008;
originally announced May 2008.
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Antibonding ground states in semiconductor artificial molecules
Authors:
M. F. Doty,
J. I. Climente,
M. Korkusinski,
M. Scheibner,
A. S. Bracker,
P. Hawrylak,
D. Gammon
Abstract:
The spin-orbit interaction is a crucial element of many semiconductor spintronic technologies. Here we report the first experimental observation, by magneto-optical spectroscopy, of a remarkable consequence of the spin-orbit interaction for holes confined in the molecular states of coupled quantum dots. As the thickness of the barrier separating two coupled quantum dots is increased, the molecul…
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The spin-orbit interaction is a crucial element of many semiconductor spintronic technologies. Here we report the first experimental observation, by magneto-optical spectroscopy, of a remarkable consequence of the spin-orbit interaction for holes confined in the molecular states of coupled quantum dots. As the thickness of the barrier separating two coupled quantum dots is increased, the molecular ground state changes character from a bonding orbital to an antibonding orbital. This result is counterintuitive, and antibonding molecular ground states are never observed in natural diatomic molecules. We explain the origin of the reversal using a four band k.p model that has been validated by numerical calculations that account for strain. The discovery of antibonding molecular ground states provides new opportunities for the design of artificially structured materials with complex molecular properties that cannot be achieved in natural systems.
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Submitted 18 April, 2008;
originally announced April 2008.
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A Single Charged Quantum Dot in a Strong Optical Field: Absorption, Gain, and the AC Stark Effect
Authors:
Xiaodong Xu,
Bo Sun,
Erik D. Kim,
Katherine Smirl,
P. R. Berman,
D. G. Steel,
A. S. Bracker,
D. Gammon,
L. J. Sham
Abstract:
We investigate a singly-charged quantum dot under a strong optical driving field by probing the system with a weak optical field. When the driving field is detuned from the trion transition, the probe absorption spectrum is shifted from the trion resonance as a consequence of the dynamic Stark effect. Simultaneously, a gain sideband is created, resulting from the coherent energy transfer between…
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We investigate a singly-charged quantum dot under a strong optical driving field by probing the system with a weak optical field. When the driving field is detuned from the trion transition, the probe absorption spectrum is shifted from the trion resonance as a consequence of the dynamic Stark effect. Simultaneously, a gain sideband is created, resulting from the coherent energy transfer between the optical fields through the quantum dot nonlinearity. As the pump detuning is moved from red to blue, we map out the anticrossing of these two spectral lines. The optical Bloch equations for a stationary two-level atom can be used to describe the numerous spectral features seen in this nano solid state system.
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Submitted 5 March, 2008;
originally announced March 2008.
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Stimulated Raman spin coherence and spin-flip induced hole burning in charged GaAs quantum dots
Authors:
Jun Cheng,
Wang Yao,
Xiaodong Xu,
D. G. Steel,
A. S. Bracker,
D. Gammon,
L. J. Sham
Abstract:
High-resolution spectral hole burning (SHB) in coherent nondegenerate differential transmission spectroscopy discloses spin-trion dynamics in an ensemble of negatively charged quantum dots. In the Voigt geometry, stimulated Raman spin coherence gives rise to Stokes and anti-Stokes sidebands on top of the trion spectral hole. The prominent feature of an extremely narrow spike at zero detuning ari…
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High-resolution spectral hole burning (SHB) in coherent nondegenerate differential transmission spectroscopy discloses spin-trion dynamics in an ensemble of negatively charged quantum dots. In the Voigt geometry, stimulated Raman spin coherence gives rise to Stokes and anti-Stokes sidebands on top of the trion spectral hole. The prominent feature of an extremely narrow spike at zero detuning arises from spin population pulsation dynamics. These SHB features confirm coherent electron spin dynamics in charged dots, and the linewidths reveal spin spectral diffusion processes.
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Submitted 12 March, 2008; v1 submitted 11 July, 2007;
originally announced July 2007.
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Photoluminescence Spectroscopy of the Molecular Biexciton in Vertically Stacked Quantum Dot Pairs
Authors:
M. Scheibner,
I. V. Ponomarev,
E. A. Stinaff,
M. F. Doty,
A. S. Bracker,
C. S. Hellberg,
T. L. Reinecke,
D. Gammon
Abstract:
We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectra are described well within a few-level, few-particle molecular model. Their properties can be modified broadly by an electric field and by structur…
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We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectra are described well within a few-level, few-particle molecular model. Their properties can be modified broadly by an electric field and by structural design, which makes them highly attractive for controlling nonlinear optical properties.
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Submitted 8 November, 2007; v1 submitted 9 May, 2007;
originally announced May 2007.
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Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well
Authors:
R. I. Dzhioev,
V. L. Korenev,
M. V. Lazarev,
V. F. Sapega,
D. Gammon,
A. S. Bracker
Abstract:
We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons with…
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We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons within the narrow exciton-trion bias transition in the PL spectra, implying a polarization sensitivity of 200 % per Volt. This effect results from a very efficient trap** of neutral excitons by the quantum well interfacial fluctuations (so-called "natural" quantum dots) containing resident electrons.
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Submitted 14 September, 2006;
originally announced September 2006.
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Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules
Authors:
A. S. Bracker,
M. Scheibner,
M. F. Doty,
E. A. Stinaff,
I. V. Ponomarev,
J. C. Kim,
L. J. Whitman,
T. L. Reinecke,
D. Gammon
Abstract:
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. We present a sy…
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Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. We present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures.
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Submitted 18 October, 2006; v1 submitted 6 September, 2006;
originally announced September 2006.
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Electrically tunable g-factors in quantum dot molecular spin states
Authors:
M. F. Doty,
M. Scheibner,
I. V. Ponomarev,
E. A. Stinaff,
A. S. Bracker,
V. L. Korenev,
T. L. Reinecke,
D. Gammon
Abstract:
We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomen…
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We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals.
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Submitted 17 October, 2006; v1 submitted 8 August, 2006;
originally announced August 2006.
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Spin Fine Structure in Optically Excited Quantum Dot Molecules
Authors:
M. Scheibner,
M. F. Doty,
I. V. Ponomarev,
A. S. Bracker,
E. A. Stinaff,
V. L. Korenev,
T. L. Reinecke,
D. Gammon
Abstract:
The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin exchange interactions, Pauli exclusion and orbital tunneling. This knowledge is critical fo…
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The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin exchange interactions, Pauli exclusion and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals, but spins.
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Submitted 15 June, 2007; v1 submitted 10 July, 2006;
originally announced July 2006.
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Internal transitions of quasi-2D charged magneto-excitons in the presence of purposely introduced weak lateral potential energy variations
Authors:
C. J. Meining,
V. R. Whiteside,
B. D. McCombe,
A. B. Dzyubenko,
J. G. Tischler,
A. S. Bracker,
D. Gammon
Abstract:
Optically detected resonance spectroscopy has been used to investigate effects of weak random lateral potential energy fluctuations on internal transitions of charged magneto-excitons (trions) in quasi two-dimensional GaAs/AlGaAs quantum-well (QW) structures. Resonant changes in the ensemble photoluminescence induced by far-infrared radiation were studied as a function of magnetic field for samp…
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Optically detected resonance spectroscopy has been used to investigate effects of weak random lateral potential energy fluctuations on internal transitions of charged magneto-excitons (trions) in quasi two-dimensional GaAs/AlGaAs quantum-well (QW) structures. Resonant changes in the ensemble photoluminescence induced by far-infrared radiation were studied as a function of magnetic field for samples having: 1) no growth interrupts (short range well-width fluctuations), and 2) intentional growth interrupts (long range monolayer well-width differences). Only bound-to-continuum internal transitions of the negatively charged trion are observed for samples of type 1. In contrast, a feature on the high field (low energy) side of electron cyclotron resonance is seen for samples of type 2 with well widths of 14.1 and 8.4 nm. This feature is attributed to a bound-to-bound transition of the spin-triplet with non-zero oscillator strength resulting from breaking of translational symmetry.
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Submitted 12 December, 2006; v1 submitted 13 June, 2006;
originally announced June 2006.
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Polarized fine structure in the excitation spectrum of a negatively charged quantum dot
Authors:
M. E. Ware,
E. A. Stinaff,
D. Gammon,
M. F. Doty,
A. S. Bracker,
D. Gershoni,
V. L. Korenev,
S. C. Badescu,
Y. Lyanda-Geller,
T. L. Reinecke
Abstract:
We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the…
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We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wavefunctions through asymmetric e-e and e-h exchange interactions.
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Submitted 23 June, 2005;
originally announced June 2005.
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Stimulated and spontaneous optical generation of electron spin coherence in charged GaAs quantum dots
Authors:
M. V. Gurudev Dutt,
Jun Cheng,
Bo Li,
Xiaodong Xu,
Xiaoqin Li,
P. R. Berman,
D. G. Steel,
A. S. Bracker,
D. Gammon,
Sophia E. Economou,
Ren-Bao Liu,
L. J. Sham
Abstract:
We report on the coherent optical excitation of electron spin polarization in the ground state of charged GaAs quantum dots via an intermediate charged exciton (trion) state. Coherent optical fields are used for the creation and detection of the Raman spin coherence between the spin ground states of the charged quantum dot. The measured spin decoherence time, which is likely limited by the natur…
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We report on the coherent optical excitation of electron spin polarization in the ground state of charged GaAs quantum dots via an intermediate charged exciton (trion) state. Coherent optical fields are used for the creation and detection of the Raman spin coherence between the spin ground states of the charged quantum dot. The measured spin decoherence time, which is likely limited by the nature of the spin ensemble, approaches 10 ns at zero field. We also show that the Raman spin coherence in the quantum beats is caused not only by the usual stimulated Raman interaction but also by simultaneous spontaneous radiative decay of either excited trion state to a coherent combination of the two spin states.
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Submitted 9 June, 2005; v1 submitted 1 April, 2005;
originally announced April 2005.
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Electrical Spin Pum** of Quantum Dots at Room Temperature
Authors:
C. H. Li,
G. Kioseoglou,
O. M. J. van t Erve,
M. E. Ware,
D. Gammon,
R. M. Stroud,
B. T. Jonker,
R. Mallory,
M. Yasar,
A. Petrou
Abstract:
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temper…
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We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid state semiconductor devices.
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Submitted 31 January, 2005;
originally announced January 2005.
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Optical pum** of electronic and nuclear spin in single charge-tunable quantum dots
Authors:
A. S. Bracker,
E. A. Stinaff,
D. Gammon,
M. E. Ware,
J. G. Tischler,
A. Shabaev,
Al. L. Efros,
D. Park,
D. Gershoni,
V. L. Korenev,
I. A. Merkulov
Abstract:
We present a comprehensive examination of optical pum** of spins in individual GaAs quantum dots as we change the charge from positive to neutral to negative using a Schottky diode. We observe that photoluminescence polarization memory has the same sign as the net charge of the dot. Optical pum** of ground state electron spins enhances this effect, as demonstrated through the first measureme…
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We present a comprehensive examination of optical pum** of spins in individual GaAs quantum dots as we change the charge from positive to neutral to negative using a Schottky diode. We observe that photoluminescence polarization memory has the same sign as the net charge of the dot. Optical pum** of ground state electron spins enhances this effect, as demonstrated through the first measurements of the Hanle effect on an individual quantum dot. With the Overhauser effect in a high longitudinal magnetic field, we demonstrate efficient optical pum** of the quantum dot's nuclear spins for all three charge states.
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Submitted 20 August, 2004;
originally announced August 2004.
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Suppression of Dyakonov-Perel Spin Relaxation in high mobility n-GaAs
Authors:
R. I. Dzhioev,
K. V. Kavokin,
V. L. Korenev,
M. V. Lazarev,
N. K. Poletaev,
B. P. Zakharchenya,
E. A. Stinaff,
D. Gammon,
A. S. Bracker,
M. E. Ware
Abstract:
We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakonov-Perel theory. The dynamics of the spin-orbit field differs substantially from the usual scheme: although all the experimental data can be self-con…
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We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakonov-Perel theory. The dynamics of the spin-orbit field differs substantially from the usual scheme: although all the experimental data can be self-consistently interpreted as a precessional spin relaxation induced by a random spin-orbit field, the correlation time of this random field, surprisingly, is much shorter than, and is independent of, the momentum relaxation time determined from transport measurements. Understanding of this phenomenon could lead to high temperature engineering of the electron spin memory.
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Submitted 6 July, 2004;
originally announced July 2004.
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Optical Read-Out and Initialization of an Electron Spin in a Single Quantum Dot
Authors:
A. Shabaev,
Al. L. Efros,
D. Gammon,
I. A. Merkulov
Abstract:
We describe theoretically the resonant optical excitation of a trion with circularly polarized light and discuss how this trion permits the read-out of a single electron spin through a recycling transition. Optical pum** through combination of circularly polarized optical $π$--pulses with permanent or $π$-- pulsed transverse magnetic fields suggests feasible protocols for spin initialization.
We describe theoretically the resonant optical excitation of a trion with circularly polarized light and discuss how this trion permits the read-out of a single electron spin through a recycling transition. Optical pum** through combination of circularly polarized optical $π$--pulses with permanent or $π$-- pulsed transverse magnetic fields suggests feasible protocols for spin initialization.
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Submitted 15 July, 2003;
originally announced July 2003.
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Theory of Quantum Optical Control of Single Spin in a Quantum Dot
Authors:
Pochung Chen,
C. Piermarocchi,
L. J. Sham,
D. Gammon,
D. G. Steel
Abstract:
We present a theory of quantum optical control of an electron spin in a single semiconductor quantum dot via spin-flip Raman transitions. We show how an arbitrary spin rotation may be achieved by virtual excitation of discrete or continuum trion states. The basic physics issues of the appropriate adiabatic optical pulses in a static magnetic field to perform the single qubit operation are addres…
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We present a theory of quantum optical control of an electron spin in a single semiconductor quantum dot via spin-flip Raman transitions. We show how an arbitrary spin rotation may be achieved by virtual excitation of discrete or continuum trion states. The basic physics issues of the appropriate adiabatic optical pulses in a static magnetic field to perform the single qubit operation are addressed.
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Submitted 2 October, 2003; v1 submitted 22 January, 2003;
originally announced January 2003.
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Low-temperature spin relaxation in n-type GaAs
Authors:
R. I. Dzhioev,
K. V. Kavokin,
V. L. Korenev,
M. V. Lazarev,
B. Ya. Meltser,
M. N. Stepanova,
B. P. Zakharchenya,
D. Gammon,
D. S. Katzer
Abstract:
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}.
A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on do** near n_D = 2x10^16 cm^{-3}. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mec…
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Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}.
A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on do** near n_D = 2x10^16 cm^{-3}. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction
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Submitted 9 August, 2002; v1 submitted 5 August, 2002;
originally announced August 2002.
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Manipulation of the Spin Memory of Electrons in n-GaAs
Authors:
R. I. Dzhioev,
V. L. Korenev,
I. A. Merkulov,
B. P. Zakharchenya,
D. Gammon,
Al. L. Efros,
D. S. Katzer
Abstract:
We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by the electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser fr…
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We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by the electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of n-GaAs layer.
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Submitted 16 May, 2002;
originally announced May 2002.