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Measurement of Spin-Polarized Photoemission from Wurtzite and Zinc-Blende Gallium Nitride Photocathodes
Authors:
S. J. Levenson,
M. B. Andorf,
B. D. Dickensheets,
I. V. Bazarov,
A. Galdi,
J. Encomendero,
V. V. Protasenko,
D. Jena,
H. G. Xing,
J. M. Maxson
Abstract:
Spin-polarized photoemission from wurtzite and zinc-blende gallium nitride (GaN) photocathodes has been observed and measured for the first time. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron affinity (NEA) with a cesium monolayer deposited on their surfaces. A field-retarding Mott polarimeter was used to measure the spin-polarization of electrons photoemi…
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Spin-polarized photoemission from wurtzite and zinc-blende gallium nitride (GaN) photocathodes has been observed and measured for the first time. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron affinity (NEA) with a cesium monolayer deposited on their surfaces. A field-retarding Mott polarimeter was used to measure the spin-polarization of electrons photoemitted from the top of the valence band. A spectral scan with a tunable optical parametric amplifier (OPA) constructed to provide low-bandwidth light revealed peak spin polarizations of 17% and 29% in the wurtzite and zinc-blende photocathodes, respectively. Zinc-blende GaN results are analyzed with a spin-polarization model accounting for experimental parameters used in the measurements, while possible mechanisms influencing the obtained spin polarization values of wurtzite GaN are discussed.
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Submitted 7 May, 2024;
originally announced May 2024.
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Magnon interactions in a moderately correlated Mott insulator
Authors:
Qisi Wang,
S. Mustafi,
E. Fogh,
N. Astrakhantsev,
Z. He,
I. Biało,
Ying Chan,
L. Martinelli,
M. Horio,
O. Ivashko,
N. E. Shaik,
K. von Arx,
Y. Sassa,
E. Paris,
M. H. Fischer,
Y. Tseng,
N. B. Christensen,
A. Galdi,
D. G. Schlom,
K. M. Shen,
T. Schmitt,
H. M. Rønnow,
J. Chang
Abstract:
Quantum fluctuations in low-dimensional systems and near quantum phase transitions have significant influences on material properties. Yet, it is difficult to experimentally gauge the strength and importance of quantum fluctuations. Here we provide a resonant inelastic x-ray scattering study of magnon excitations in Mott insulating cuprates. From the thin film of SrCuO$_2$, single- and bi-magnon d…
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Quantum fluctuations in low-dimensional systems and near quantum phase transitions have significant influences on material properties. Yet, it is difficult to experimentally gauge the strength and importance of quantum fluctuations. Here we provide a resonant inelastic x-ray scattering study of magnon excitations in Mott insulating cuprates. From the thin film of SrCuO$_2$, single- and bi-magnon dispersions are derived. Using an effective Heisenberg Hamiltonian generated from the Hubbard model, we show that the single-magnon dispersion is only described satisfactorily when including significant quantum corrections stemming from magnon-magnon interactions. Comparative results on La$_2$CuO$_4$ indicate that quantum fluctuations are much stronger in SrCuO$_2$ suggesting closer proximity to a magnetic quantum critical point. Monte Carlo calculations reveal that other magnetic orders may compete with the antiferromagnetic Néel order as the ground state. Our results indicate that SrCuO$_2$ - due to strong quantum fluctuations - is a unique starting point for the exploration of novel magnetic ground states.
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Submitted 26 June, 2024; v1 submitted 28 November, 2023;
originally announced November 2023.
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Atomically smooth films of CsSb: a chemically robust visible light photocathode
Authors:
C. T. Parzyck,
C. A. Pennington,
W. J. I. DeBenedetti,
J. Balajka,
E. Echeverria,
H. Paik,
L. Moreschini,
B. D. Faeth,
C. Hu,
J. K. Nangoi,
V. Anil,
T. A. Arias,
M. A. Hines,
D. G. Schlom,
A. Galdi,
K. M. Shen,
J. M. Maxson
Abstract:
Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and co…
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Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and contamination, must be overcome. By exploring the growth of CsxSb thin films monitored by in situ electron diffraction, the conditions to reproducibly synthesize atomically smooth films of CsSb on 3C-SiC (100) and graphene coated TiO2 (110) substrates are identified, and detailed structural, morphological, and electronic characterization is presented. These films combine high quantum efficiency in the visible (up to 1.2% at 400 nm), an easily accessible photoemission threshold of 550 nm, low surface roughness (down to 600 pm on a 1 um scale), and a robustness against oxidation up to 15 times greater then Cs3Sb. These properties suggest that CsSb has the potential to operate as an alternative to Cs$_3$Sb in electron source applications where the demands of the vacuum environment might otherwise preclude the use of traditional alkali antimonides.
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Submitted 31 May, 2023;
originally announced May 2023.
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Gapped collective charge excitations and interlayer hop** in cuprate superconductors
Authors:
M. Hepting,
M. Bejas,
A. Nag,
H. Yamase,
N. Coppola,
D. Betto,
C. Falter,
M. Garcia-Fernandez,
S. Agrestini,
K. -J. Zhou,
M. Minola,
C. Sacco,
L. Maritato,
P. Orgiani,
H. I. Wei,
K. M. Shen,
D. G. Schlom,
A. Galdi,
A. Greco,
B. Keimer
Abstract:
We use resonant inelastic x-ray scattering (RIXS) to probe the propagation of plasmons in the electron-doped cuprate superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ (SLCO). We detect a plasmon gap of $\sim$~120 meV at the two-dimensional Brillouin zone center, indicating that low-energy plasmons in SLCO are not strictly acoustic. The plasmon dispersion, including the gap, is accurately captured by laye…
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We use resonant inelastic x-ray scattering (RIXS) to probe the propagation of plasmons in the electron-doped cuprate superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ (SLCO). We detect a plasmon gap of $\sim$~120 meV at the two-dimensional Brillouin zone center, indicating that low-energy plasmons in SLCO are not strictly acoustic. The plasmon dispersion, including the gap, is accurately captured by layered $t$-$J$-$V$ model calculations. A similar analysis performed on recent RIXS data from other cuprates suggests that the plasmon gap is generic and its size is related to the magnitude of the interlayer hop** $t_z$. Our work signifies the three-dimensionality of the charge dynamics in layered cuprates and provides a new method to determine $t_z$.
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Submitted 28 June, 2022;
originally announced June 2022.
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Multi-scale time-resolved electron diffraction: A case study in moiré materials
Authors:
C. J. R. Duncan,
M. Kaemingk,
W. H. Li,
M. B. Andorf,
A. C. Bartnik,
A. Galdi,
M. Gordon,
C. A. Pennington,
I. V. Bazarov,
H. J. Zeng,
F. Liu,
D. Luo,
A. Sood,
A. M. Lindenberg,
M. W. Tate,
D. A. Muller,
J. Thom-Levy,
S. M. Gruner,
J. M. Maxson
Abstract:
Ultrafast-optical-pump -- structural-probe measurements, including ultrafast electron and x-ray scattering, provide direct experimental access to the fundamental timescales of atomic motion, and are thus foundational techniques for studying matter out of equilibrium. High-performance detectors are needed in scattering experiments to obtain maximum scientific value from every probe particle. We dep…
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Ultrafast-optical-pump -- structural-probe measurements, including ultrafast electron and x-ray scattering, provide direct experimental access to the fundamental timescales of atomic motion, and are thus foundational techniques for studying matter out of equilibrium. High-performance detectors are needed in scattering experiments to obtain maximum scientific value from every probe particle. We deploy a hybrid pixel array direct electron detector to perform ultrafast electron diffraction experiments on a WSe$_2$/MoSe$_2$ 2D heterobilayer, resolving the weak features of diffuse scattering and moiré superlattice structure without saturating the zero order peak. Enabled by the detector's high frame rate, we show that a chop** technique provides diffraction difference images with signal-to-noise at the shot noise limit. Finally, we demonstrate that a fast detector frame rate coupled with a high repetition rate probe can provide continuous time resolution from femtoseconds to seconds, enabling us to perform a scanning ultrafast electron diffraction experiment that maps thermal transport in WSe$_2$/MoSe$_2$ and resolves distinct diffusion mechanisms in space and time.
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Submitted 27 July, 2023; v1 submitted 16 June, 2022;
originally announced June 2022.
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Ab initio study of the crystal and electronic structure of mono- and bi-alkali antimonides: Stability, Goldschmidt-like tolerance factors, and optical properties
Authors:
J. K. Nangoi,
M. Gaowei,
A. Galdi,
J. M. Maxson,
S. Karkare,
J. Smedley,
T. A. Arias
Abstract:
Mono- and bi-alkali antimonides, X$_2$YSb (X and Y from Group I), are promising for next-generation electron emitters due to their capability of producing high-quality electron beams. However, these materials are not yet well understood, in part due to the technical challenges in growing pure, ordered alkali antimonides. For example, in the current literature there is a lack of complete understand…
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Mono- and bi-alkali antimonides, X$_2$YSb (X and Y from Group I), are promising for next-generation electron emitters due to their capability of producing high-quality electron beams. However, these materials are not yet well understood, in part due to the technical challenges in growing pure, ordered alkali antimonides. For example, in the current literature there is a lack of complete understanding of the mechanically stable crystal structures of these materials. As a first step towards understanding this issue, this paper presents an ab initio study of stability of single-crystal mono- and bi-alkali antimonides in the $D0_3$ structure, the structure generally assumed in the literature for these materials. Finding that many of these materials actually are unstable in the $D0_3$ structure, we formulate a new set of Goldschmidt-like tolerance factors that accurately predict $D0_3$ stability using a procedure analogous to machine-learning perceptron-based analysis. Next, we consider possible stable structures for materials that we predict to be unstable in the $D0_3$ structure. Taking as examples the mono- and bi-alkali antimonides Cs$_3$Sb and Cs$_2$KSb, which also are technologically interesting for photoemission and photoabsorption applications, respectively, we note that the most unstable phonon displacements are consistent with the cubic structure, and we therefore perform extensive ab initio searches to identify potential ground-state structures in a cubic lattice. Our X-ray diffraction experiments confirm that indeed these two materials are not stable in the $D0_3$ structure and show scattering that is consistent with our new, proposed stable structures. Finally, we explore ab initio the implications of the breaking of the $D0_3$ symmetry on the electronic structure, showing significant impact on the location of the optical absorption edge.
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Submitted 27 May, 2022;
originally announced May 2022.
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Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
Authors:
Jai Kwan Bae,
Matthew Andorf,
Adam Bartnik,
Alice Galdi,
Luca Cultrera,
Jared Maxson,
Ivan Bazarov
Abstract:
Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current (> 1 mA) spin-polarized electron beam. Despite its popularity, a short operational lifetime is the main drawback of this material. Recent works have shown that the lifetime can be improved by using a robust Cs-Sb-O NEA layer with minimal adverse effects. In this work, we operate…
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Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current (> 1 mA) spin-polarized electron beam. Despite its popularity, a short operational lifetime is the main drawback of this material. Recent works have shown that the lifetime can be improved by using a robust Cs-Sb-O NEA layer with minimal adverse effects. In this work, we operate GaAs photocathodes with this new activation method in a high voltage environment to extract a high current. We observed spectral dependence on the lifetime improvement. In particular, we saw a 45% increase in the lifetime at 780 nm for Cs-Sb-O activated GaAs compared to Cs-O activated GaAs.
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Submitted 26 May, 2022;
originally announced May 2022.
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A single-crystal alkali antimonide photocathode: high efficiency in the ultra-thin limit
Authors:
C. T. Parzyck,
A. Galdi,
J. K. Nangoi,
W. J. I. DeBenedetti,
J. Balajka,
B. D. Faeth,
H. Paik,
C. Hu,
T. A. Arias,
M. A. Hines,
D. G. Schlom,
K. M. Shen,
J. M. Maxson
Abstract:
The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films…
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The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films of Cs$_3$Sb on 3C-SiC (001) using molecular-beam epitaxy. Films as thin as 4 nm have quantum efficiencies exceeding 2\% at 532 nm. We also find that epitaxial films have an order of magnitude larger quantum efficiency at 650 nm than comparable polycrystalline films on Si. Additionally, these films permit angle-resolved photoemission spectroscopy measurements of the electronic structure, which are found to be in good agreement with theory. Epitaxial films open the door to dramatic brightness enhancements via increased efficiency near threshold, reduced surface disorder, and the possibility of engineering new photoemission functionality at the level of single atomic layers.
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Submitted 28 December, 2021;
originally announced December 2021.
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A kiloelectron-volt ultrafast electron micro-diffraction apparatus using low emittance semiconductor photocathodes
Authors:
W. H. Li,
C. J. R. Duncan,
M. B. Andorf,
A. C. Bartnik,
E. Bianco,
L. Cultrera,
A. Galdi,
M. Gordon,
M. Kaemingk,
C. A. Pennington,
L. F. Kourkoutis,
I. V. Bazarov,
J. M. Maxson
Abstract:
We report the design and performance of a time-resolved electron diffraction apparatus capable of producing intense bunches with simultaneously single digit micron probe size, long coherence length, and $200$ fs rms time resolution. We measure the 5d (peak) beam brightness at the sample location in micro-diffraction mode to be $7 \times 10^{13} \ \mathrm{A}/\text{m}^2\text{-rad}^2$. To generate hi…
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We report the design and performance of a time-resolved electron diffraction apparatus capable of producing intense bunches with simultaneously single digit micron probe size, long coherence length, and $200$ fs rms time resolution. We measure the 5d (peak) beam brightness at the sample location in micro-diffraction mode to be $7 \times 10^{13} \ \mathrm{A}/\text{m}^2\text{-rad}^2$. To generate high brightness electron bunches, the system employs high efficiency, low emittance semiconductor photocathodes driven with a wavelength near the photoemission threshold at a repetition rate up to 250 kHz. We characterize spatial, temporal, and reciprocal space resolution of the apparatus. We perform proof-of-principle measurements of ultrafast heating in single crystal Au samples and compare experimental results with simulations that account for the effects of multiple-scattering.
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Submitted 2 February, 2022; v1 submitted 15 November, 2021;
originally announced November 2021.
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Computational Synthesis of Substrates by Crystal Cleavage
Authors:
Joshua T. Paul,
Alice Galdi,
Christopher Parzyck,
Kyle Shen,
Richard G. Hennig
Abstract:
The discovery of novel substrate materials has been dominated by trial and error, opening the opportunity for a systematic search. To identify stable crystal surfaces, we generate bonding networks for materials from the Materials Project database with one to five atoms in the primitive unit cell. For three-dimensional crystals in this set, we systematically break up to three bonds in the bonding n…
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The discovery of novel substrate materials has been dominated by trial and error, opening the opportunity for a systematic search. To identify stable crystal surfaces, we generate bonding networks for materials from the Materials Project database with one to five atoms in the primitive unit cell. For three-dimensional crystals in this set, we systematically break up to three bonds in the bonding network of the primitive cell. Successful cleavage reduces the bonding network to two periodic dimensions, creating a layer of the cleaved crystal. We identify 4,693 unique cleavage surfaces across 2,133 bulk crystals, 4,626 of which have a maximum Miller index of 1. To characterize the likelihood of cleavage and the thermodynamic stability of the cleaved surfaces, we create monolayers of these surfaces and calculate the work of cleavage and the partially-relaxed surface energy using density functional theory to discover 3,991 potential substrates, 2,307 of which do not contain f-valence electrons and 2,183 of which are derived from a bulk precursor with an entry in the Inorganic Crystal Structure Database. Following, we identify distinct trends in the work of cleavage of these layers and relate them to metallic and covalent/ionic bonding of the three-dimensional precursor. We also assembled a database of commercially available substrates and show that the database of predicted substrates significantly enhances the diversity and range of the distribution of electronic properties and lattice parameters, providing opportunities for the epitaxial growth of many materials. We illustrate the potential impact of the substrate database by identifying several new epitaxial substrates for the transparent conductor BaSnO3, which exhibit low cleavage energies and result in strains an order of magnitude lower than currently used substrates.
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Submitted 29 March, 2021; v1 submitted 3 February, 2020;
originally announced February 2020.
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Improved lifetime of a high spin polarization superlattice photocathode
Authors:
Jai Kwan Bae,
Alice Galdi,
Luca Cultrera,
Frank Ikponmwen,
Jared Maxson,
Ivan Bazarov
Abstract:
Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation of quantum efficiency. We report on series of unconventional NEA activations on surfaces of bulk GaAs with Cs, Sb, and O2 using different methods of oxygen expo…
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Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation of quantum efficiency. We report on series of unconventional NEA activations on surfaces of bulk GaAs with Cs, Sb, and O2 using different methods of oxygen exposure for optimizing photocathode performance. One order of magnitude improvement in lifetime with respect to the standard Cs-O2 activation is achieved without significant loss on electron spin polarization and quantum efficiency by codepositing Cs, Sb, and O2. A strained GaAs/GaAsP superlattice sample activated with the codeposition method demonstrated similar enhancement in lifetime near the photoemission threshold while maintaining 90% spin polarization.
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Submitted 21 November, 2019;
originally announced November 2019.
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Multiple double-exchange mechanism by Mn$^{2+}$-do** in manganite compounds
Authors:
P. Orgiani,
A. Galdi,
C. Aruta,
V. Cataudella,
G. De Filippis,
C. A. Perroni,
V. Marigliano Ramaglia,
R. Ciancio,
N. B. Brookes,
M. Moretti Sala,
G. Ghiringhelli,
L. Maritato
Abstract:
Double-exchange mechanisms in RE$_{1-x}$AE$_{x}$MnO$_{3}$ manganites (where RE is a trivalent rare-earth ion and AE is a divalent alkali-earth ion) relies on the strong exchange interaction between two Mn$^{3+}$ and Mn$^{4+}$ ions through interfiling oxygen 2p states. Nevertheless, the role of RE and AE ions has ever been considered "silent" with respect to the DE conducting mechanisms. Here we sh…
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Double-exchange mechanisms in RE$_{1-x}$AE$_{x}$MnO$_{3}$ manganites (where RE is a trivalent rare-earth ion and AE is a divalent alkali-earth ion) relies on the strong exchange interaction between two Mn$^{3+}$ and Mn$^{4+}$ ions through interfiling oxygen 2p states. Nevertheless, the role of RE and AE ions has ever been considered "silent" with respect to the DE conducting mechanisms. Here we show that a new path for DE-mechanism is indeed possible by partially replacing the RE-AE elements by Mn$^{2+}$-ions, in La-deficient La$_{x}$MnO$_{3-δ}$ thin films. X-ray absorption spectroscopy demonstrated the relevant presence of Mn$^{2+}$ ions, which is unambiguously proved to be substituted at La-site by Resonant Inelastic X-ray Scattering. Mn$^{2+}$ is proved to be directly correlated to the enhanced magneto-transport properties because of an additional hop** mechanism trough interfiling Mn$^{2+}$-ions, theoretically confirmed by calculations within the effective single band model. The very idea to use Mn$^{2+}$ both as a do** element and an ions electronically involved in the conduction mechanism, has never been foreseen, revealing a new phenomena in transport properties of manganites. More important, such a strategy might be also pursed in other strongly correlated materials.
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Submitted 2 November, 2010; v1 submitted 30 June, 2010;
originally announced June 2010.
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Evolution of magnetic phases and orbital occupation in (SrMnO3)n/(LaMnO3)2n superlattices
Authors:
C. Aruta,
C. Adamo,
A. Galdi,
P. Orgiani,
V. Bisogni,
N. B. Brookes,
J. C. Cezar,
P. Thakur,
C. A. Perroni,
G. De Filippis,
V. Cataudella,
D. G. Schlom,
L. Maritato,
G. Ghiringhelli
Abstract:
The magnetic and electronic modifications induced at the interfaces in (SrMnO$_{3}$)$_{n}$/(LaMnO$_{3}$)$_{2n}$ superlattices have been investigated by linear and circular magnetic dichroism in the Mn L$_{2,3}$ x-ray absorption spectra. Together with theoretical calculations, our data demonstrate that the charge redistribution across interfaces favors in-plane ferromagnetic (FM) order and…
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The magnetic and electronic modifications induced at the interfaces in (SrMnO$_{3}$)$_{n}$/(LaMnO$_{3}$)$_{2n}$ superlattices have been investigated by linear and circular magnetic dichroism in the Mn L$_{2,3}$ x-ray absorption spectra. Together with theoretical calculations, our data demonstrate that the charge redistribution across interfaces favors in-plane ferromagnetic (FM) order and $e_{g}(x^{2}-y^{2})$ orbital occupation, in agreement with the average strain. Far from interfaces, inside LaMnO$_3$, electron localization and local strain favor antiferromagnetism (AFM) and $e_{g}(3z^{2}-r^{2})$ orbital occupation. For $n=1$ the high density of interfacial planes ultimately leads to dominant FM order forcing the residual AFM phase to be in-plane too, while for $n \geq 5$ the FM layers are separated by AFM regions having out-of-plane spin orientation.
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Submitted 23 September, 2009;
originally announced September 2009.
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Charge density waves enhance the electronic noise of manganites
Authors:
C. Barone,
A. Galdi,
N. Lampis,
L. Maritato,
F. Miletto Granozio,
S. Pagano,
P. Perna,
M. Radovic,
U. Scotti di Uccio
Abstract:
The transport and noise properties of Pr_{0.7}Ca_{0.3}MnO_{3} epitaxial thin films in the temperature range from room temperature to 160 K are reported. It is shown that both the broadband 1/f noise properties and the dependence of resistance on electric field are consistent with the idea of a collective electrical transport, as in the classical model of sliding charge density waves. On the othe…
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The transport and noise properties of Pr_{0.7}Ca_{0.3}MnO_{3} epitaxial thin films in the temperature range from room temperature to 160 K are reported. It is shown that both the broadband 1/f noise properties and the dependence of resistance on electric field are consistent with the idea of a collective electrical transport, as in the classical model of sliding charge density waves. On the other hand, the observations cannot be reconciled with standard models of charge ordering and charge melting. Methodologically, it is proposed to consider noise-spectra analysis as a unique tool for the identification of the transport mechanism in such highly correlated systems. On the basis of the results, the electrical transport is envisaged as one of the most effective ways to understand the nature of the insulating, charge-modulated ground states in manganites.
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Submitted 30 July, 2009;
originally announced July 2009.
