Iridium-do** as a strategy to realize visible light absorption and p-type behavior in BaTiO3
Authors:
Sujana Chandrappa,
Simon Joyson Galbao,
P S Sankara Rama Krishnan,
Namitha Anna Koshi,
Srewashi Das,
Stephen Nagaraju Myakala,
Seung Cheol Lee,
Arnab Dutta,
Alexey Cherevan,
Satadeep Bhattacharjee,
Dharmapura H K Murthy
Abstract:
BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via do** and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite significant progress, achieving visible-light absorbing BTO with tuneable carrier concentration has been challenging, a crucial requirement for many applications.…
▽ More
BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via do** and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite significant progress, achieving visible-light absorbing BTO with tuneable carrier concentration has been challenging, a crucial requirement for many applications. In this work, a p-type BTO with visible-light absorption is realized via iridium do**. Detailed analysis using advanced spectroscopy tools and computational electronic structure analysis is used to rationalize the n- to p-type transition after Ir do**. Results offered mechanistic insight into the interplay between the dopant site occupancy, the dopant position within the band gap, and the defect chemistry affecting the carrier concentration. A decrease in the Ti3+ donor levels concentration and the mutually correlated oxygen vacancies upon Ir do** is attributed to the p-type behavior. Due to the formation of Ir3+ or Ir4+ in-gap energy levels within the forbidden region, the optical transition can be elicited from or to such levels resulting in visible-light absorption. This newly developed Ir-doped BTO can be a promising p-type perovskite-oxide with imminent applications in solar fuel generation, spintronics and optoelectronics.
△ Less
Submitted 15 February, 2023;
originally announced February 2023.
