Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers
Authors:
Stephen A Church,
Francesco Vitale,
Aswani Gopakumar,
Nikita Gagrani,
Yunyan Zhang,
Nian Jiang,
Hark Hoe Tan,
Chennupati Jagadish,
Huiyun Liu,
Hannah Joyce,
Carsten Ronning,
Patrick Parkinson
Abstract:
Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire lasers represent a flexible class of light source where each nanowire is both gain material and cavity; however, strong coupling between these properties and the p…
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Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire lasers represent a flexible class of light source where each nanowire is both gain material and cavity; however, strong coupling between these properties and the performance leads to inhomogeneity across the population. While this has been studied and optimized for individual material systems, no architecture-wide insight is available. Here, nine nanowire laser material systems are studied and compared using 55,516 nanowire lasers to provide statistically robust insight into performance. These results demonstrate that, while it may be important to optimise internal quantum efficiency for certain materials, cavity effects are always critical. Our study provides a roadmap to optimize the performance of nanowire lasers made from any material: this can be achieved by ensuring a narrow spread of lengths and end-facet reflectivities.
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Submitted 21 May, 2024;
originally announced May 2024.
Ultralow Threshold, Single-Mode InGaAs/GaAs Multi-Quantum Disk Nanowire Lasers
Authors:
Xutao Zhang,
Ruixuan Yi,
Nikita Gagrani,
Ziyuan Li,
Fanlu Zhang,
Xuetao Gan,
Xiaomei Yao,
Xiaoming Yuan,
Naiyin Wang,
Jianlin Zhao,
**** Chen,
Wei Lu,
Lan Fu,
Hark Hoe Tan,
Chennupati Jagadish
Abstract:
We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by excellent NW morphology and InGaAs/GaAs mul…
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We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by excellent NW morphology and InGaAs/GaAs multi-quantum disks. At 5 K, a threshold low as 1.6 μJ/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface non-radiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ~ 0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.
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Submitted 26 May, 2021;
originally announced May 2021.
