Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing
Authors:
Mena N. Gadalla,
Andrew S. Greenspon,
Rodrick Kuate Defo,
Xingyu Zhang,
Evelyn L. Hu
Abstract:
The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabric…
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The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions.
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Submitted 23 September, 2020; v1 submitted 25 August, 2020;
originally announced August 2020.
Phononic band structure engineering for high-Q gigahertz surface acoustic wave resonators on lithium niobate
Authors:
Linbo Shao,
Smarak Maity,
Lu Zheng,
Lue Wu,
Amirhassan Shams-Ansari,
Young-Ik Sohn,
Eric Puma,
M. N. Gadalla,
Mian Zhang,
Cheng Wang,
Keji Lai,
Marko Lončar
Abstract:
Phonons at gigahertz frequencies interact with electrons, photons, and atomic systems in solids, and therefore have extensive applications in signal processing, sensing, and quantum technologies. Surface acoustic wave (SAW) resonators that confine surface phonons can play a crucial role in such integrated phononic systems due to small mode size, low dissipation, and efficient electrical transducti…
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Phonons at gigahertz frequencies interact with electrons, photons, and atomic systems in solids, and therefore have extensive applications in signal processing, sensing, and quantum technologies. Surface acoustic wave (SAW) resonators that confine surface phonons can play a crucial role in such integrated phononic systems due to small mode size, low dissipation, and efficient electrical transduction. To date, it has been challenging to achieve high quality (Q) factor and small phonon mode size for SAW resonators at gigahertz frequencies. Here, we present a methodology to design compact high-Q SAW resonators on lithium niobate operating at gigahertz frequencies. We experimentally verify out designs and demonstrate Q factors in excess of $2\times10^4$ at room temperature ($6\times10^4$ at 4 Kelvin) and mode area as low as $1.87 λ^2$. This is achieved by phononic band structure engineering, which provides high confinement with low mechanical loss. The frequency-Q products (fQ) of our SAW resonators are greater than $10^{13}$. These high-fQ and small mode size SAW resonators could enable applications in quantum phononics and integrated hybrid systems with phonons, photons, and solid-state qubits.
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Submitted 29 May, 2019; v1 submitted 25 January, 2019;
originally announced January 2019.
