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Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
Authors:
P. Aseev,
Ž. Gačević,
J. M. Mánuel,
J. J. Jiménez,
R. García,
F. M. Morales,
E. Calleja
Abstract:
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The applied procedure consists of two fabrication stages. During the first stage, the cold substrate (T = 15 °C) is exposed to an im**ing In flux, resulting in form…
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This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The applied procedure consists of two fabrication stages. During the first stage, the cold substrate (T = 15 °C) is exposed to an im**ing In flux, resulting in formation of metallic In droplets on the substrate surface, and then to an im**ing active nitrogen flux, resulting in In conversion into polycrystalline InN islands. During the second stage, the substrate, which is still kept exposed to active nitrogen, is heated up to T = 300 °C, to allow for the reorganization of extended polycrystalline InN islands into groups of independent single crystalline wurtzite InN QDs. This work provides a detailed experimental insight into both fabrication stages and their qualitative explanations within the scopes of adatom surface kinetics (stage I) and total energy per unit crystal volume minimization (stage II). Finally, the formation mechanisms of InN QDs on the three different substrates (Si(111), Si(001) and In0.3Ga0.7N/Si(111)) are compared, and also linked to the formation mechanisms of other more studied nanostructures, such as self assembled GaN/AlN QDs and self assembled and selective area grown GaN nanowires.
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Submitted 31 January, 2024;
originally announced February 2024.
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Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
Authors:
Ž. Gačević,
J. Grandal,
Q. Guo,
R. Kirste,
M. Varela,
Z. Sitar,
M. A. Sánchez García
Abstract:
Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we show that the NWs grow nearly strain free, preferentially perpendicular to the amorphous SiO2 interlayer and without epitaxial relationship to Si(111) substrat…
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Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we show that the NWs grow nearly strain free, preferentially perpendicular to the amorphous SiO2 interlayer and without epitaxial relationship to Si(111) substrate, as expected. Scanning electron microscopy investigation reveals significant NWs coalescence, which results in their progressively increasing diameter and formation of columnar structures with non hexagonal cross section. Making use of scanning transmission electron microscopy (STEM), the NWs initial diameters are found in the 20 to 30 nm range. In addition, the formation of a thin (30 nm) polycrystalline AlN layer is observed on the substrate surface. Regarding the structural quality of the AlN NWs, STEM measurements reveal the formation of extended columnar regions, which grow with a virtually perfect metal-polarity wurtzite arrangement and with extended defects only sporadically observed. Combination of STEM and electron energy loss spectroscopy (EELS) reveals the formation of continuous aluminum oxide (1 to 2 nm) on the NW surface. Low temperature photoluminescence measurements reveal a single near band edge (NBE) emission peak, positioned at 6.03 eV (at 2 K), a value consistent with nearly zero NW strain evidenced by XRD and in agreement with the values obtained on AlN bulk layers synthesized by other growth techniques. The significant full width at half maximum of NBE emission, found at 20 meV (at 2 K), suggests that free and bound excitons are mixed together within this single emission band.
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Submitted 31 January, 2024;
originally announced February 2024.
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Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging
Authors:
Piu Rajak,
Mahabul Islam,
J. J. Jiménez,
J. M. Mánuel,
P. Aseev,
Ž. Gačević,
E. Calleja,
R. García,
Francisco M. Morales,
Somnath Bhattacharyya
Abstract:
InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB stacking semiconductor system, polarity is an important feature which affects the electronic properties. Therefore, the determination of this characteristic on any wurtzite (semi)polar III nitride compound or alloy is essential for defining its applicability. In this paper,…
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InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB stacking semiconductor system, polarity is an important feature which affects the electronic properties. Therefore, the determination of this characteristic on any wurtzite (semi)polar III nitride compound or alloy is essential for defining its applicability. In this paper, the polarity of InN QDs grown on silicon by indium droplet epitaxy plus nitridation and annealing was determined by a modified approach combining exit wave reconstruction with negative spherical aberration high resolution lattice imaging using TEM. Comparing the micrographs of two QDs from the same TEM specimen with the simulated images of InN slab structures generated under the same conditions as of the experiments, it was confirmed that the QDs of the present study are N polar. Given that the settlement of material's polarity has always been a tedious, indirect and controversial issue, the major value of our proposal is to provide a straightforward procedure to determine the polar direction from atomic-resolution focal series images.
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Submitted 31 January, 2024;
originally announced February 2024.
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Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
Authors:
V. Braza,
T. Ben,
S. Flores,
D. F. Reyes,
A. Gallego-Carro,
L. Stanojevic,
Z. Gacevic,
N. Ruíz-Marín,
J. M. Ulloa,
D. González
Abstract:
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation, experimental Sb composition profiles differ greatly from the nominal square-wave design. In this work, the improvement of the interface quality of these SLs in terms…
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Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation, experimental Sb composition profiles differ greatly from the nominal square-wave design. In this work, the improvement of the interface quality of these SLs in terms of compositional abruptness and surface roughness has been evaluated by implementing different growth interruption times under Sb4/As4 (soaking) and As4 (desorption) overpressure conditions before and after the growth of GaAsSb layers, respectively. The combined effects of both processes enhance Sb distribution, achieving squarer compositional profiles with reduced surface roughness interfaces. It has been found that the improvement in compositional abruptness is quantitatively much higher at the lower interface, during soaking, than at the upper interface during desorption. Conversely, a larger decrease in surface roughness is achieved at the upper interface than at the lower interface. Fitting of the Sb segregation profiles using the 3-layer kinetic fluid model has shown that the increase in Sb incorporation rate is due to the decrease in segregation energy, presumably to changes in the surface reconstruction of the floating layer at the surface.
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Submitted 31 January, 2024;
originally announced January 2024.
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Effective Refractive-Index Approximation: A Link between Structural and Optical Disorder of Planar Resonant Optical Structures
Authors:
Žarko Gačević,
Nenad Vukmirović
Abstract:
We provide detailed insights into a link between structural and optical disorder of resonant optical structures, in particular, distributed Bragg reflectors (DBRs) and resonant microcavities. The standard (targeted) DBR structures have periodic square wave like refractive-index profiles, and their optical performance is determined by the refractive index ratio of the two applied materials and the…
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We provide detailed insights into a link between structural and optical disorder of resonant optical structures, in particular, distributed Bragg reflectors (DBRs) and resonant microcavities. The standard (targeted) DBR structures have periodic square wave like refractive-index profiles, and their optical performance is determined by the refractive index ratio of the two applied materials and the number of DBR periods. It is well known that its structural disorder strongly affects its optical properties, but, despite that, this influence has not been quantitatively addressed in the literature. We propose a precise quantitative definition for a structural disorder of a single DBR unit cell (disorder factor), completing the set of DBR fundamental parameters. Then we expose the basis for the effective refractive index approximation (ERIA), showing that, as long as DBR optical properties are concerned, the influence of increasing structural disorder is virtually identical to the influence of decreasing refractive index ratio, with the latter influence being easily quantified. Making use of the ERIA method, simple analytical formulas, which enable rapid insights into the reflectivity and stop band width of DBRs with different types of transient layers at the heterointerfaces, are derived and the results validated, via both transfer matrix simulations and direct experimental measurements of imperfect DBRs. The insights of the ERIA method are then further applied on resonant microcavitities, providing a comprehensive link between their structural disorder and subsequent deterioration of their quality (Q) factor.
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Submitted 31 January, 2024;
originally announced January 2024.
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A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
Authors:
S. Fernández-Garrido,
Ž. Gačević,
E. Calleja
Abstract:
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the im**ing In flux and the substrate temperature in the 450-610$^{\circ}$C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased…
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Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the im**ing In flux and the substrate temperature in the 450-610$^{\circ}$C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased with the im**ing In flux until stoichiometry was reached at the growth front. The InN losses during growth followed an Arrhenius behaviour characterized by an activation energy of 2.0 eV. A growth diagram highly instrumental to identify optimum growth conditions was established.
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Submitted 30 January, 2024;
originally announced January 2024.
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Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
Authors:
Z. Gacevic,
M. Holmes,
E. Chernysheva,
M. Muller,
A. Torres-Pardo,
P. Veit,
F. Bertram,
J. Christen,
J. M. Gonzalez-Calbet,
Y. Arakawa,
E. Calleja,
S. Lazic
Abstract:
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in nonpolar, semipolar and polar crystal regions. All three quantum dot types exhibit single photon emission with narrow emission line widths and high degrees of linear optical polarization. The host crystal region strongly affects bo…
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A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in nonpolar, semipolar and polar crystal regions. All three quantum dot types exhibit single photon emission with narrow emission line widths and high degrees of linear optical polarization. The host crystal region strongly affects both single photon wavelength and emission lifetime, reaching subnanosecond time scales for the non- and semipolar quantum dots. Localization sites in the InGaN potential landscape, most likely induced by indium fluctuations across the InGaN nanoshell, are identified as the driving mechanism for the single photon emission. The hereby reported pencil-like InGaN nanoshell is the first single nanostructure able to host all three types of single photon sources and is, thus, a promising building block for tunable quantum light devices integrated into future photonic circuits.
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Submitted 28 June, 2017; v1 submitted 12 June, 2017;
originally announced June 2017.
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Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
Authors:
S. Lazic,
E. Chernysheva,
Z. Gacevic,
H. P. van der Meulen,
E. Calleja,
J. M. Calleja Pardo
Abstract:
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. T…
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The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.
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Submitted 12 June, 2017;
originally announced June 2017.
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Blue-to-green single photons from InGaN/GaN dot-in-a-wire nanowire ordered arrays
Authors:
E. Chernysheva,
Z. Gacevic,
N. Garcia-Lepetit,
H. P. van der Meulen,
M. Muller,
F. Bertram,
P. Veit,
A. Torres-Pardo,
J. M. Gonzalez Calbet,
J. Christen,
E. Calleja,
J. M. Calleja,
S. Lazic
Abstract:
Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical…
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Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical emission lines from quantum dot-like recombination centers are observed in the blue-green spectral range. Characterization by electron microscopy, cathodoluminescence and micro-photoluminescence indicate that single photons are emitted from regions of high In concentration in the nano-disks due to alloy composition fluctuations. Single-photon emission is determined by photon correlation measurements showing deep anti-bunching minima in the second-order correlation function. The present results are a promising step towards the realization of on-site/on-demand single-photon sources in the blue-green spectral range operating in the GHz frequency range at high temperatures.
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Submitted 12 June, 2017;
originally announced June 2017.
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Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Authors:
Snezana Lazic,
Ekaterina Chernysheva,
Zarko Gacevic,
Noemi Garcia-Lepetit,
Herko P. van der Meulen,
Marcus Muller,
Frank Bertram,
Peter Veit,
Jürgen Christen,
Almudena Torres-Pardo,
José M. González Calbet,
Enrique Calleja,
Jose M. Calleja
Abstract:
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epi…
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The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.
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Submitted 12 June, 2017;
originally announced June 2017.
