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Single device offset-free magnetic field sensing principle with tunable sensitivity and linear range based on spin-orbit-torques
Authors:
Sabri Koraltan,
Christin Schmitt,
Florian Bruckner,
Claas Abert,
Klemens Prügl,
Michael Kirsch,
Rahul Gupta,
Sebastian Zeilinger,
Joshua M. Salazar-Mejía,
Milan Agrawal,
Johannes Güttinger,
Armin Satz,
Gerhard Jakob,
Mathias Kläui,
Dieter Suess
Abstract:
We propose a novel device concept using spin-orbit-torques to realize a magnetic field sensor, where we eliminate the sensor offset using a differential measurement concept. We derive a simple analytical formulation for the sensor signal and demonstrate its validity with numerical investigations using macrospin simulations. The sensitivity and the measurable linear sensing range in the proposed co…
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We propose a novel device concept using spin-orbit-torques to realize a magnetic field sensor, where we eliminate the sensor offset using a differential measurement concept. We derive a simple analytical formulation for the sensor signal and demonstrate its validity with numerical investigations using macrospin simulations. The sensitivity and the measurable linear sensing range in the proposed concept can be tuned by either varying the effective magnetic anisotropy or by varying the magnitude of the injected currents. We show that undesired perturbation fields normal to the sensitive direction preserve the zero-offset property and only slightly modulate the sensitivity of the proposed sensor. Higher-harmonics voltage analysis on a Hall cross experimentally confirms the linearity and tunability via current strength. Additionally, the sensor exhibits a non-vanishing offset in the experiment which we attribute to the anomalous Nernst effect.
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Submitted 23 March, 2023;
originally announced March 2023.
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Skyrmion automotion in confined counter-sensor device geometries
Authors:
Kilian Leutner,
Thomas Brian Winkler,
Johannes Güttinger,
Hans Fangohr,
Mathias Kläui
Abstract:
Magnetic skyrmions are topologically stabilized quasi-particles and are promising candidates for energy-efficient applications, such as storage but also logic and sensing. Here we present a new concept for a multi-turn sensor-counter device based on skyrmions, where the number of sensed rotations is encoded in the number of nucleated skyrmions. The skyrmion-boundary force in the confined geometry…
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Magnetic skyrmions are topologically stabilized quasi-particles and are promising candidates for energy-efficient applications, such as storage but also logic and sensing. Here we present a new concept for a multi-turn sensor-counter device based on skyrmions, where the number of sensed rotations is encoded in the number of nucleated skyrmions. The skyrmion-boundary force in the confined geometry of the device in combination with the topology-dependent dynamics leads to the effect of automotion for certain geometries. For our case, we describe and investigate this effect with micromagnetic simulations and the coarse-grained Thiele equation in a triangular geometry with an attached reservoir as part of the sensor-counter device.
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Submitted 10 November, 2022;
originally announced November 2022.
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High quality factor graphene-based 2D heterostructure mechanical resonator
Authors:
M. Will,
M. Hamer,
M. Müller,
A. Noury,
P. Weber,
A. Bachtold,
R. V. Gorbachev,
C. Stampfer,
J. Güttinger
Abstract:
Ultralight mechanical resonators based on low-dimensional materials are well suited as exceptional transducers of minuscule forces or mass changes. However, the low dimensionality also provides a challenge to minimize resistive losses and heating. Here, we report on a novel approach that aims to combine different 2D materials to tackle this challenge. We fabricated a heterostructure mechanical res…
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Ultralight mechanical resonators based on low-dimensional materials are well suited as exceptional transducers of minuscule forces or mass changes. However, the low dimensionality also provides a challenge to minimize resistive losses and heating. Here, we report on a novel approach that aims to combine different 2D materials to tackle this challenge. We fabricated a heterostructure mechanical resonator consisting of few layers of niobium diselenide (NbSe$_2$) encapsulated by two graphene sheets. The hybrid membrane shows high quality factors up to 245'000 at low temperatures, comparable to the best few-layer graphene mechanical resonators. In contrast to few-layer graphene resonators, the device shows reduced electrical losses attributed to the lower resistivity of the NbSe$_2$ layer. The peculiar low temperature dependence of the intrinsic quality factor points to dissipation over two-level systems which in turn relax over the electronic system. Our high sensitivity readout is enabled by coupling the membrane to a superconducting cavity which allows for the integration of the hybrid mechanical resonator as a sensitive and low loss transducer in future quantum circuits.
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Submitted 17 September, 2018;
originally announced September 2018.
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Switching off energy decay channels in nanomechanical resonators
Authors:
J. Guettinger,
A. Noury,
P. Weber,
A. M. Eriksson,
C. Lagoin,
J. Moser,
C. Eichler,
A. Wallraff,
A. Isacsson,
A. Bachtold
Abstract:
Energy decay plays a central role in a wide range of phenomena, such as optical emission, nuclear fission, and dissipation in quantum systems. Energy decay is usually described as a system leaking energy irreversibly into an environmental bath. Here, we report on energy decay measurements in nanomechanical systems based on multi-layer graphene that cannot be explained by the paradigm of a system d…
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Energy decay plays a central role in a wide range of phenomena, such as optical emission, nuclear fission, and dissipation in quantum systems. Energy decay is usually described as a system leaking energy irreversibly into an environmental bath. Here, we report on energy decay measurements in nanomechanical systems based on multi-layer graphene that cannot be explained by the paradigm of a system directly coupled to a bath. As the energy of a vibrational mode freely decays, the rate of energy decay switches abruptly to a lower value. This finding can be explained by a model where the measured mode hybridizes with other modes of the resonator at high energy. Below a threshold energy, modes are decoupled, resulting in comparatively low decay rates and giant quality factors exceeding 1 million. Our work opens up new possibilities to manipulate vibrational states, engineer hybrid states with mechanical modes at completely different frequencies, and to study the collective motion of this highly tunable system.
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Submitted 13 December, 2016;
originally announced December 2016.
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Quantum transport through MoS$_2$ constrictions defined by photodo**
Authors:
Alexander Ep**,
Luca Banszerus,
Johannes Güttinger,
Luisa Krückeberg,
Kenji Watanabe,
Takashi Taniguchi,
Fabian Hassler,
Bernd Beschoten,
Christoph Stampfer
Abstract:
We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS$_2$) constrictions using photodo**. The devices are based on van-der-Waals heterostructures where few-layer MoS$_2$ flakes are partially encapsulated by hexagonal boron nitride (hBN) and covered by a few-layer graphene flake to fabricate electrical contacts. Since the as-fabricated devices are insulating…
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We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS$_2$) constrictions using photodo**. The devices are based on van-der-Waals heterostructures where few-layer MoS$_2$ flakes are partially encapsulated by hexagonal boron nitride (hBN) and covered by a few-layer graphene flake to fabricate electrical contacts. Since the as-fabricated devices are insulating at low temperatures, we use photo-induced remote do** in the hBN substrate to create free charge carriers in the MoS$_2$ layer. On top of the device, we place additional metal structures, which define the shape of the constriction and act as shadow masks during photodo** of the underlying MoS$_2$/hBN heterostructure. Low temperature two- and four-terminal transport measurements show evidence of quantum confinement effects.
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Submitted 5 April, 2018; v1 submitted 4 December, 2016;
originally announced December 2016.
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Force sensitivity of multilayer graphene optomechanical devices
Authors:
Peter Weber,
Johannes Güttinger,
Adrien Noury,
Jorge Vergara-Cruz,
Adrian Bachtold
Abstract:
Mechanical resonators based on low-dimensional materials are promising for force and mass sensing experiments. The force sensitivity in these ultra-light resonators is often limited by the imprecision in the measurement of the vibrations, the fluctuations of the mechanical resonant frequency, and the heating induced by the measurement. Here, we strongly couple multilayer graphene resonators to sup…
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Mechanical resonators based on low-dimensional materials are promising for force and mass sensing experiments. The force sensitivity in these ultra-light resonators is often limited by the imprecision in the measurement of the vibrations, the fluctuations of the mechanical resonant frequency, and the heating induced by the measurement. Here, we strongly couple multilayer graphene resonators to superconducting cavities in order to achieve a displacement sensitivity of $1.3$ fm Hz$^{-1/2}$. This coupling also allows us to damp the resonator to an average phonon occupation of $7.2$. Our best force sensitivity, $390$ zN Hz$^{-1/2}$ with a bandwidth of $200$ Hz, is achieved by balancing measurement imprecision, optomechanical dam**, and heating. Our results hold promise for studying the quantum capacitance of graphene, its magnetization, and the electron and nuclear spins of molecules adsorbed on its surface.
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Submitted 21 September, 2016;
originally announced September 2016.
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Electro-mechanical control of an optical emitter using graphene
Authors:
Antoine Reserbat-Plantey,
Kevin G. Schädler,
Louis Gaudreau,
Gabriele Navickaite,
Johannes Güttinger,
Darrick Chang,
Costanza Toninelli,
Adrian Bachtold,
Frank H. L. Koppens
Abstract:
Active, in situ control of light at the nanoscale remains a challenge in modern physics and in nanophotonics in particular. A promising approach is to take advantage of the technological maturity of nano-electromechanical systems (NEMS) and to combine it with on-chip optics. However, in scaling down the dimensions of such integrated devices, the coupling of a NEMS to optical fields becomes challen…
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Active, in situ control of light at the nanoscale remains a challenge in modern physics and in nanophotonics in particular. A promising approach is to take advantage of the technological maturity of nano-electromechanical systems (NEMS) and to combine it with on-chip optics. However, in scaling down the dimensions of such integrated devices, the coupling of a NEMS to optical fields becomes challenging. Despite recent progress in nano-optomechanical coupling, active control of optical fields at the nanoscale has not been achieved with an on-chip NEMS thus far. Here, we show a new type of hybrid system, which consists of an on-chip graphene NEMS suspended a few tens of nanometers above nitrogen-vacancy centres (NVC), which are stable single photon emitters embedded in nano-diamonds. Electromechanical control of the photons emitted by the NVC is provided by electrostatic tuning of the graphene NEMS position, which is transduced to a modulation of NVC emission intensity. The optomechanical coupling between the graphene displacement and the NVC emission is based on near-field dipole-dipole interaction. This class of optomechanical coupling increases strongly for smaller distances, making it suitable for devices with nanoscale dimensions. These achievements hold promise for the selective control of single-emitter arrays on chip, optical spectroscopy of individual nano-objects, integrated optomechanical information processing and quantum optomechanics.
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Submitted 30 April, 2015;
originally announced April 2015.
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Nanotube mechanical resonators with quality factors of up to 5 million
Authors:
Joel Moser,
Alexander Eichler,
Johannes Güttinger,
Mark I. Dykman,
Adrian Bachtold
Abstract:
Carbon nanotube mechanical resonators have attracted considerable interest because of their small mass, the high quality of their surface, and the pristine electronic states they host. However, their small dimensions result in fragile vibrational states that are difficult to measure. Here we observe quality factors $Q$ as high as $5\times10^6$ in ultra-clean nanotube resonators at a cryostat tempe…
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Carbon nanotube mechanical resonators have attracted considerable interest because of their small mass, the high quality of their surface, and the pristine electronic states they host. However, their small dimensions result in fragile vibrational states that are difficult to measure. Here we observe quality factors $Q$ as high as $5\times10^6$ in ultra-clean nanotube resonators at a cryostat temperature of 30 mK, where we define $Q$ as the ratio of the resonant frequency over the linewidth. Measuring such high quality factors requires both employing an ultra-low noise method to detect minuscule vibrations rapidly, and carefully reducing the noise of the electrostatic environment. We observe that the measured quality factors fluctuate because of fluctuations of the resonant frequency. The quality factors we measure are record high; they are comparable to the highest $Q$ reported in mechanical resonators of much larger size, a remarkable result considering that reducing the size of resonators is usually concomitant with decreasing quality factors. The combination of ultra-low size and very large $Q$ offers new opportunities for ultra-sensitive detection schemes and quantum optomechanical experiments.
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Submitted 31 March, 2015;
originally announced March 2015.
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Coupling graphene mechanical resonators to superconducting microwave cavities
Authors:
P. Weber,
J. Güttinger,
I. Tsioutsios,
D. E. Chang,
A. Bachtold
Abstract:
Graphene is an attractive material for nanomechanical devices because it allows for exceptional properties, such as high frequencies and quality factors, and low mass. An outstanding challenge, however, has been to obtain large coupling between the motion and external systems for efficient readout and manipulation. Here, we report on a novel approach, in which we capacitively couple a high-Q graph…
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Graphene is an attractive material for nanomechanical devices because it allows for exceptional properties, such as high frequencies and quality factors, and low mass. An outstanding challenge, however, has been to obtain large coupling between the motion and external systems for efficient readout and manipulation. Here, we report on a novel approach, in which we capacitively couple a high-Q graphene mechanical resonator ($Q \sim 10^5$) to a superconducting microwave cavity. The initial devices exhibit a large single-photon coupling of $\sim 10$ Hz. Remarkably, we can electrostatically change the graphene equilibrium position and thereby tune the single photon coupling, the mechanical resonance frequency and the sign and magnitude of the observed Duffing nonlinearity. The strong tunability opens up new possibilities, such as the tuning of the optomechanical coupling strength on a time scale faster than the inverse of the cavity linewidth. With realistic improvements, it should be possible to enter the regime of quantum optomechanics.
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Submitted 25 April, 2014; v1 submitted 19 March, 2014;
originally announced March 2014.
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Ultrasensitive force detection with a nanotube mechanical resonator
Authors:
J. Moser,
J. Guttinger,
A. Eichler,
M. J. Esplandiu,
D. E. Liu,
M. I. Dykman,
A. Bachtold
Abstract:
Since the advent of atomic force microscopy, mechanical resonators have been used to study a wide variety of phenomena, such as the dynamics of individual electron spins, persistent currents in normal metal rings, and the Casimir force. Key to these experiments is the ability to measure weak forces. Here, we report on force sensing experiments with a sensitivity of 12 zN Hz^(-1/2) at a temperature…
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Since the advent of atomic force microscopy, mechanical resonators have been used to study a wide variety of phenomena, such as the dynamics of individual electron spins, persistent currents in normal metal rings, and the Casimir force. Key to these experiments is the ability to measure weak forces. Here, we report on force sensing experiments with a sensitivity of 12 zN Hz^(-1/2) at a temperature of 1.2 K using a resonator made of a carbon nanotube. An ultra-sensitive method based on cross-correlated electrical noise measurements, in combination with parametric downconversion, is used to detect the low-amplitude vibrations of the nanotube induced by weak forces. The force sensitivity is quantified by applying a known capacitive force. This detection method also allows us to measure the Brownian vibrations of the nanotube down to cryogenic temperatures. Force sensing with nanotube resonators offers new opportunities for detecting and manipulating individual nuclear spins as well as for magnetometry measurements.
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Submitted 29 May, 2013;
originally announced May 2013.
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High-frequency gate manipulation of a bilayer graphene quantum dot
Authors:
S. Dröscher,
J. Güttinger,
T. Mathis,
B. Batlogg,
T. Ihn,
K. Ensslin
Abstract:
We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the prese…
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We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate.
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Submitted 19 June, 2012;
originally announced June 2012.
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Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime
Authors:
T. Müller,
J. Güttinger,
D. Bischoff,
S. Hellmüller,
K. Ensslin,
T. Ihn
Abstract:
In situ tunable radio-frequency charge detection is used for the determination of the tunneling rates into and out of a graphene single quantum dot connected to only one lead. An analytical model for calculating these rates in the multi-level tunneling regime is presented and found to correspond very well to our experimental observations.
In situ tunable radio-frequency charge detection is used for the determination of the tunneling rates into and out of a graphene single quantum dot connected to only one lead. An analytical model for calculating these rates in the multi-level tunneling regime is presented and found to correspond very well to our experimental observations.
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Submitted 18 April, 2012;
originally announced April 2012.
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Raman spectroscopy on etched graphene nanoribbons
Authors:
Dominik Bischoff,
Johannes Güttinger,
Susanne Dröscher,
Thomas Ihn,
Klaus Ensslin,
Christoph Stampfer
Abstract:
We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the w…
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We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the width of the ribbons. We further give indications that the D- to G-line ratio can be used to gain information about the crystallographic orientation of the underlying graphene. Finally, we perform polarization angle dependent measurements to analyze the nanoribbon edge-regions.
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Submitted 5 May, 2011;
originally announced May 2011.
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Time-resolved charge detection in graphene quantum dots
Authors:
J. Guettinger,
J. Seif,
C. Stampfer,
A. Capelli,
K. Ensslin,
T. Ihn
Abstract:
We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-bro…
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We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a non-monotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above 2 mV results in an increase of the dot-lead transition rate related to back-action of the charge detector current on the dot.
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Submitted 2 May, 2011;
originally announced May 2011.
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Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field
Authors:
J. Guettinger,
C. Stampfer,
T. Frey,
T. Ihn,
K. Ensslin
Abstract:
We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island from source and drain graphene contacts. Lateral graphene gates are used to electrostatically tune the device. Measurements of Coulomb resonances, including cons…
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We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island from source and drain graphene contacts. Lateral graphene gates are used to electrostatically tune the device. Measurements of Coulomb resonances, including constriction resonances and Coulomb diamonds prove the functionality of the graphene quantum dot with a charging energy of around 4.5 meV. We show the evolution of Coulomb resonances as a function of perpendicular magnetic field, which provides indications of the formation of the graphene specific 0th Landau level. Finally, we demonstrate that the complex pattern superimposing the quantum dot energy spectra is due to the formation of additional localized states with increasing magnetic field.
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Submitted 2 May, 2011;
originally announced May 2011.
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Coherent Electron-Phonon Coupling in Tailored Quantum Systems
Authors:
P. Roulleau,
S. Baer,
T. Choi,
F. Molitor,
J. Güttinger,
T. Müller,
S. Dröscher,
K. Ensslin,
T. Ihn
Abstract:
The coupling between a two-level system and its environment leads to decoherence. Within the context of coherent manipulation of electronic or quasiparticle states in nanostructures, it is crucial to understand the sources of decoherence. Here, we study the effect of electron-phonon coupling in a graphene and an InAs nanowire double quantum dot. Our measurements reveal oscillations of the double q…
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The coupling between a two-level system and its environment leads to decoherence. Within the context of coherent manipulation of electronic or quasiparticle states in nanostructures, it is crucial to understand the sources of decoherence. Here, we study the effect of electron-phonon coupling in a graphene and an InAs nanowire double quantum dot. Our measurements reveal oscillations of the double quantum dot current periodic in energy detuning between the two levels. These periodic peaks are more pronounced in the nanowire than in graphene, and disappear when the temperature is increased. We attribute the oscillations to an interference effect between two alternative inelastic decay paths involving acoustic phonons present in these materials. This interpretation predicts the oscillations to wash out when temperature is increased, as observed experimentally.
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Submitted 19 April, 2011;
originally announced April 2011.
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Imaging Localized States in Graphene Nanostructures
Authors:
S. Schnez,
J. Güttinger,
M. Huefner,
C. Stampfer,
K. Ensslin,
T. Ihn
Abstract:
Probing techniques with spatial resolution have the potential to lead to a better understanding of the microscopic physical processes and to novel routes for manipulating nanostructures. We present scanning-gate images of a graphene quantum dot which is coupled to source and drain via two constrictions. We image and locate conductance resonances of the quantum dot in the Coulomb-blockade regime as…
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Probing techniques with spatial resolution have the potential to lead to a better understanding of the microscopic physical processes and to novel routes for manipulating nanostructures. We present scanning-gate images of a graphene quantum dot which is coupled to source and drain via two constrictions. We image and locate conductance resonances of the quantum dot in the Coulomb-blockade regime as well as resonances of localized states in the constrictions in real space.
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Submitted 12 May, 2010;
originally announced May 2010.
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Transition to Landau Levels in Graphene Quantum Dots
Authors:
F. Libisch,
S. Rotter,
J. Güttinger,
C. Stampfer,
J. Burgdörfer
Abstract:
We investigate the electronic eigenstates of graphene quantum dots of realistic size (i.e., up to 80 nm diameter) in the presence of a perpendicular magnetic field B. Numerical tight-binding calculations and Coulomb-blockade measurements performed near the Dirac point exhibit the transition from the linear density of states at B=0 to the Landau level regime at high fields. Details of this transiti…
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We investigate the electronic eigenstates of graphene quantum dots of realistic size (i.e., up to 80 nm diameter) in the presence of a perpendicular magnetic field B. Numerical tight-binding calculations and Coulomb-blockade measurements performed near the Dirac point exhibit the transition from the linear density of states at B=0 to the Landau level regime at high fields. Details of this transition sensitively depend on the underlying graphene lattice structure, bulk defects, and localization effects at the edges. Key to the understanding of the parametric evolution of the levels is the strength of the chiral-symmetry breaking K-K' scattering. We show that the parametric variation of the level variance provides a quantitative measure for this scattering mechanism. We perform measurements of the parametric motion of Coulomb blockade peaks as a function of magnetic field and find good agreement. We thereby demonstrate that the magnetic-field dependence of graphene energy levels may serve as a sensitive indicator for the properties of graphene quantum dots and, in further consequence, for the validity of the Dirac-picture.
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Submitted 8 June, 2010; v1 submitted 4 March, 2010;
originally announced March 2010.
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Spin States in Graphene Quantum Dots
Authors:
J. Guettinger,
T. Frey,
C. Stampfer,
T. Ihn,
K. Ensslin
Abstract:
We investigate ground and excited state transport through small (d = 70 nm) graphene quantum dots. The successive spin filling of orbital states is detected by measuring the ground state energy as a function of a magnetic field. For a magnetic field in-plane of the quantum dot the Zemann splitting of spin states is measured. The results are compatible with a g-factor of 2 and we detect a spin-fi…
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We investigate ground and excited state transport through small (d = 70 nm) graphene quantum dots. The successive spin filling of orbital states is detected by measuring the ground state energy as a function of a magnetic field. For a magnetic field in-plane of the quantum dot the Zemann splitting of spin states is measured. The results are compatible with a g-factor of 2 and we detect a spin-filling sequence for a series of states which is reasonable given the strength of exchange interaction effects expected for graphene.
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Submitted 19 February, 2010;
originally announced February 2010.
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Observation of excited states in a graphene double quantum dot
Authors:
F. Molitor,
H. Knowles,
S. Dröscher,
U. Gasser,
T. Choi,
P. Roulleau,
J. Güttinger,
A. Jacobsen,
C. Stampfer,
K. Ensslin,
T. Ihn
Abstract:
We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel b…
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We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel barriers connecting the system to source and drain leads.
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Submitted 26 January, 2010;
originally announced January 2010.
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Graphene quantum dots in perpendicular magnetic fields
Authors:
J. Guettinger,
C. Stampfer,
T. Frey,
T. Ihn,
K. Ensslin
Abstract:
We report transport experiments on graphene quantum dots. We focus on excited state spectra in the near vicinity of the charge neutrality point and signatures of the electron-hole crossover as a function of a perpendicular magnetic field. Coulomb blockade resonances of a 50 nm wide and 80 nm long dot are visible at all gate voltages across the transport gap ranging from hole to electron transpor…
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We report transport experiments on graphene quantum dots. We focus on excited state spectra in the near vicinity of the charge neutrality point and signatures of the electron-hole crossover as a function of a perpendicular magnetic field. Coulomb blockade resonances of a 50 nm wide and 80 nm long dot are visible at all gate voltages across the transport gap ranging from hole to electron transport. The magnetic field dependence of more than 40 states as a function of the back gate voltage can be interpreted in terms of the unique evolution of the diamagnetic spectrum of a graphene dot including the formation of the E = 0 Landau level, situated in the center of the transport gap, and marking the electron-hole crossover.
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Submitted 15 May, 2009;
originally announced May 2009.
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Transport through graphene double dots
Authors:
F. Molitor,
S. Dröscher,
J. Güttinger,
A. Jacobsen,
C. Stampfer,
T. Ihn,
K. Ensslin
Abstract:
We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage. Using a purely capacitive model, we extract all relevant energy scales of the double dot system.
We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage. Using a purely capacitive model, we extract all relevant energy scales of the double dot system.
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Submitted 5 May, 2009;
originally announced May 2009.
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Electron-Hole Crossover in Graphene Quantum Dots
Authors:
J. Guettinger,
C. Stampfer,
F. Libisch,
T. Frey,
J. Burgdoerfer,
T. Ihn,
K. Ensslin
Abstract:
We investigate the addition spectrum of a graphene quantum dot in the vicinity of the electron-hole crossover as a function of perpendicular magnetic field. Coulomb blockade resonances of the 50 nm wide dot are visible at all gate voltages across the transport gap ranging from hole to electron transport. The magnetic field dependence of more than 50 states displays the unique complex evolution o…
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We investigate the addition spectrum of a graphene quantum dot in the vicinity of the electron-hole crossover as a function of perpendicular magnetic field. Coulomb blockade resonances of the 50 nm wide dot are visible at all gate voltages across the transport gap ranging from hole to electron transport. The magnetic field dependence of more than 50 states displays the unique complex evolution of the diamagnetic spectrum of a graphene dot from the low-field regime to the Landau regime with the n=0 Landau level situated in the center of the transport gap marking the electron-hole crossover. The average peak spacing in the energy region around the crossover decreases with increasing magnetic field. In the vicinity of the charge neutrality point we observe a well resolved and rich excited state spectrum.
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Submitted 4 August, 2009; v1 submitted 22 April, 2009;
originally announced April 2009.
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Energy gaps in etched graphene nanoribbons
Authors:
C. Stampfer,
J. Guettinger,
S. Hellmueller,
F. Molitor,
K. Ensslin,
T. Ihn
Abstract:
Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary…
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Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary by up to 30% for different localized states which must therefore be spread in position along the ribbon. A single-electron transistor is used to prove the addition of individual electrons to the localized states. In our sample the characteristic charging energy is of the order of 10 meV, the characteristic strength of the disorder potential of the order of 100 meV.
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Submitted 5 November, 2008;
originally announced November 2008.
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Transport gap in side-gated graphene constrictions
Authors:
F. Molitor,
A. Jacobsen,
C. Stampfer,
J. Guettinger,
T. Ihn,
K. Ensslin
Abstract:
We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We study the effect of an applied side gate voltage on the transport gap and show that high side gate voltages lift the suppression of the conductance.…
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We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We study the effect of an applied side gate voltage on the transport gap and show that high side gate voltages lift the suppression of the conductance. Finally we study the effect of an applied magnetic field and demonstrate the presence of edge states in the constriction.
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Submitted 10 March, 2009; v1 submitted 5 November, 2008;
originally announced November 2008.
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Charge Detection in Graphene Quantum Dots
Authors:
J. Guettinger,
C. Stampfer,
S. Hellmueller,
F. Molitor,
T. Ihn,
K. Ensslin
Abstract:
We report measurements on a graphene quantum dot with an integrated graphene charge detector. The quantum dot device consists of a graphene island (diameter approx. 200 nm) connected to source and drain contacts via two narrow graphene constrictions. From Coulomb diamond measurements a charging energy of 4.3 meV is extracted. The charge detector is based on a 45 nm wide graphene nanoribbon place…
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We report measurements on a graphene quantum dot with an integrated graphene charge detector. The quantum dot device consists of a graphene island (diameter approx. 200 nm) connected to source and drain contacts via two narrow graphene constrictions. From Coulomb diamond measurements a charging energy of 4.3 meV is extracted. The charge detector is based on a 45 nm wide graphene nanoribbon placed approx. 60 nm from the island. We show that resonances in the nanoribbon can be used to detect individual charging events on the quantum dot. The charging induced potential change on the quantum dot causes a step-like change of the current in the charge detector. The relative change of the current ranges from 10% up to 60% for detecting individual charging events.
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Submitted 23 September, 2008;
originally announced September 2008.
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Observation of excited states in a graphene quantum dot
Authors:
S. Schnez,
F. Molitor,
C. Stampfer,
J. Guettinger,
I. Shorubalko,
T. Ihn,
K. Ensslin
Abstract:
We demonstrate that excited states in single-layer graphene quantum dots can be detected via direct transport experiments. Coulomb diamond measurements show distinct features of sequential tunneling through an excited state. Moreover, the onset of inelastic cotunneling in the diamond region could be detected. For low magnetic fields, the positions of the single-particle energy levels fluctuate o…
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We demonstrate that excited states in single-layer graphene quantum dots can be detected via direct transport experiments. Coulomb diamond measurements show distinct features of sequential tunneling through an excited state. Moreover, the onset of inelastic cotunneling in the diamond region could be detected. For low magnetic fields, the positions of the single-particle energy levels fluctuate on the scale of a flux quantum penetrating the dot area. For higher magnetic fields, the transition to the formation of Landau levels is observed. Estimates based on the linear energy-momentum relation of graphene give carrier numbers of the order of 10 for our device.
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Submitted 11 March, 2009; v1 submitted 17 July, 2008;
originally announced July 2008.
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Tunable Graphene Single Electron Transistor
Authors:
C. Stampfer,
E. Schurtenberger,
F. Molitor,
J. Guettinger,
T. Ihn,
K. Ensslin
Abstract:
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence…
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We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions and for the Coulomb blockade resonances. From Coulomb diamond measurements in different device configurations (i.e. barrier configurations) we extract a charging energy of 3.4 meV and estimate a characteristic energy scale for the constriction resonances of 10 meV.
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Submitted 9 June, 2008;
originally announced June 2008.
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Coulomb oscillations in three-layer graphene nanostructures
Authors:
J. Guettinger,
C. Stampfer,
F. Molitor,
D. Graf,
T. Ihn,
K. Ensslin
Abstract:
We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain contacts. Three lateral graphene gates are used to electrostatically tune the device. An individual three-layer graphene constriction has been investigated separa…
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We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain contacts. Three lateral graphene gates are used to electrostatically tune the device. An individual three-layer graphene constriction has been investigated separately showing a transport gap near the charge neutrality point. The graphene tunneling barriers show a strongly nonmonotonic coupling as function of gate voltage indicating the presence of localized states in the constrictions. We show Coulomb oscillations and Coulomb diamond measurements proving the functionality of the graphene SET. A charging energy of $\approx 0.6$ meV is extracted.
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Submitted 9 June, 2008;
originally announced June 2008.
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Tunable Coulomb blockade in nanostructured graphene
Authors:
C. Stampfer,
J. Guettinger,
F. Molitor,
D. Graf,
T. Ihn,
K. Ensslin
Abstract:
We report on Coulomb blockade and Coulomb diamond measurements on an etched, tunable single-layer graphene quantum dot. The device consisting of a graphene island connected via two narrow graphene constrictions is fully tunable by three lateral graphene gates. Coulomb blockade resonances are observed and from Coulomb diamond measurements a charging energy of ~3.5 meV is extracted. For increasing…
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We report on Coulomb blockade and Coulomb diamond measurements on an etched, tunable single-layer graphene quantum dot. The device consisting of a graphene island connected via two narrow graphene constrictions is fully tunable by three lateral graphene gates. Coulomb blockade resonances are observed and from Coulomb diamond measurements a charging energy of ~3.5 meV is extracted. For increasing temperatures we detect a peak broadening and a transmission increase of the nanostructured graphene barriers.
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Submitted 24 September, 2007;
originally announced September 2007.
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Local gating of a graphene Hall bar by graphene side gates
Authors:
F. Molitor,
J. Güttinger,
C. Stampfer,
D. Graf,
T. Ihn,
K. Ensslin
Abstract:
We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approx. 90 nm. The side gates are also effective in the qu…
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We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approx. 90 nm. The side gates are also effective in the quantum Hall regime, and allow to modify the longitudinal and Hall resistances.
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Submitted 19 September, 2007;
originally announced September 2007.