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Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
Authors:
L. R. Schreiber,
C. Schwark,
G. Güntherodt,
M. Lepsa,
C. Adelmann,
C. J. Palmstrøm,
X. Lou,
P. A. Crowell,
B. Beschoten
Abstract:
The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin…
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The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin packets, which are injected across an Fe/GaAs Schottky barrier into $n$-GaAs. By means of time-resolved Faraday rotation, we demonstrate phase coherence by the observation of multiple Larmor precession cycles for current pulse widths down to 500 ps at 17 K. We show that the current pulses are broadened by the charging and discharging time of the Schottky barrier. At high frequencies, the observable spin coherence is limited only by the finite band width of the current pulses, which is on the order of 2 GHz. These results therefore demonstrate that all-electrical injection and phase control of electron spin packets at microwave frequencies is possible in metallic-ferromagnet/semiconductor heterostructures.
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Submitted 17 November, 2021;
originally announced November 2021.
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Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy
Authors:
N. Müsgens,
E. Maynicke,
M. Weidenbach,
C. J. P. Smits,
M. Bückins,
J. Mayer,
B. Beschoten,
G. Güntherodt
Abstract:
Molecular beam epitaxy is used to fabricate magnetic single and double layer junctions which are deposited in prefabricated nanostencil masks. For all Co | Cu | Co double layer junctions we observe a stable intermediate resistance state which can be reached by current starting from the parallel configuration of the respective ferromagnetic layers. The generation of spin waves is investigated at ro…
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Molecular beam epitaxy is used to fabricate magnetic single and double layer junctions which are deposited in prefabricated nanostencil masks. For all Co | Cu | Co double layer junctions we observe a stable intermediate resistance state which can be reached by current starting from the parallel configuration of the respective ferromagnetic layers. The generation of spin waves is investigated at room temperature in the frequency domain by spectrum analysis, demonstrating both in-plane and out-of-plane precessions of the magnetization of the free magnetic layer. Current-induced magnetization dynamics in magnetic single layer junctions of Cu | Co | Cu has been investigated in magnetic fields which are applied perpendicular to the magnetic layer. We find a hysteretic switching in the current sweeps with resistance changes significantly larger than the anisotropic magnetoresistance effect.
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Submitted 24 March, 2021;
originally announced March 2021.
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Weakly-correlated nature of ferromagnetism in non symmorphic CrO$_2$ revealed by bulk-sensitive soft X ray ARPES
Authors:
F. Bisti,
V. A. Rogalev,
M. Karolak,
S. Paul,
A. Gupta,
T. Schmitt,
G. Güntherodt,
V. Eyert,
G. Sangiovanni,
G. Profeta,
V. N. Strocov
Abstract:
Chromium dioxide CrO$_2$ belongs to a class of materials called ferromagnetic half-metals, whose peculiar aspect is to act as a metal in one spin orientation and as semiconductor or insulator in the opposite one. Despite numerous experimental and theoretical studies motivated by technologically important applications of this material in spintronics, its fundamental properties such as momentum reso…
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Chromium dioxide CrO$_2$ belongs to a class of materials called ferromagnetic half-metals, whose peculiar aspect is to act as a metal in one spin orientation and as semiconductor or insulator in the opposite one. Despite numerous experimental and theoretical studies motivated by technologically important applications of this material in spintronics, its fundamental properties such as momentum resolved electron dispersions and Fermi surface have so far remained experimentally inaccessible due to metastability of its surface that instantly reduces to amorphous Cr$_2$O$_3$. In this work, we demonstrate that direct access to the native electronic structure of CrO$_2$ can be achieved with soft-X-ray angle-resolved photoemission spectroscopy whose large probing depth penetrates through the Cr$_2$O$_3$ layer. For the first time the electronic dispersions and Fermi surface of CrO$_2$ are measured, which are fundamental prerequisites to solve the long debate on the nature of electronic correlations in this material. Since density functional theory augmented by a relatively weak local Coulomb repulsion gives an exhaustive description of our spectroscopic data, we rule out strong-coupling theories of CrO$_2$. Crucial for the correct interpretation of our experimental data in terms of the valence band dispersions is the understanding of a non-trivial spectral response of CrO$_2$ caused by interference effects in the photoemission process originating from the non-symmorphic space group of the rutile crystal structure of CrO$_2$.
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Submitted 9 November, 2017; v1 submitted 6 July, 2016;
originally announced July 2016.
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Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications
Authors:
A. A. Tonkikh,
E. N. Voloshina,
P. Werner,
H. Blumtritt,
B. Senkovskiy,
G. Güntherodt,
S. S. P. Parkin,
Yu. S. Dedkov
Abstract:
Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of…
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Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.
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Submitted 14 October, 2015;
originally announced October 2015.
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Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
Authors:
F. Volmer,
M. Drögeler,
G. Güntherodt,
C. Stampfer,
B. Beschoten
Abstract:
In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly depos…
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In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly deposited onto graphene which results in rough MgO-to-Co interfaces and favor the formation of conducting pinholes throughout the MgO layer. We show that the contact resistance area product (R$_c$A) is a benchmark for spin transport properties as it scales with the measured spin lifetime in these devices indicating that contact-induced spin dephasing is the bottleneck for spin transport even in devices with large R$_c$A values. In a second class of devices, Co/MgO electrodes are first patterned onto a silicon substrate. Subsequently, a graphene-hBN heterostructure is directly transferred onto these prepatterned electrodes which provides improved interface properties. This is seen by a strong enhancement of both charge and spin transport properties yielding charge carrier mobilities exceeding 20000 cm$^2$/(Vs) and spin lifetimes up to 3.7 ns at room temperature. We discuss several shortcomings in the determination of both quantities which complicates the analysis of both extrinsic and intrinsic spin scattering mechanisms. Furthermore, we show that contacts can be the origin of a second charge neutrality point in gate dependent resistance measurements which is influenced by the quantum capacitance of the underlying graphene layer.
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Submitted 24 June, 2015; v1 submitted 5 March, 2015;
originally announced March 2015.
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Time-resolved lateral spin-caloric transport of optically generated spin packets in n-GaAs
Authors:
Stefan Göbbels,
Gernot Güntherodt,
Bernd Beschoten
Abstract:
We report on lateral spin-caloric transport (LSCT) of electron spin packets which are optically generated by ps laser pulses in the non-magnetic semiconductor n-GaAs at $T\leq35$K. LSCT is driven by a local temperature gradient induced by an additional cw heating laser. The spatio-temporal evolution of the spin packets is probed using time-resolved Faraday rotation. We demonstrate that the local t…
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We report on lateral spin-caloric transport (LSCT) of electron spin packets which are optically generated by ps laser pulses in the non-magnetic semiconductor n-GaAs at $T\leq35$K. LSCT is driven by a local temperature gradient induced by an additional cw heating laser. The spatio-temporal evolution of the spin packets is probed using time-resolved Faraday rotation. We demonstrate that the local temperature-gradient induced spin diffusion is solely driven by a non-equilibrium hot spin distribution, i.e. without involvement of phonon drag effects. Additional electric field-driven spin drift experiments are used to verify directly the validity of the non-classical Einstein relation for moderately doped semiconductors at low temperatures for near band-gap excitation.
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Submitted 23 March, 2018; v1 submitted 5 March, 2015;
originally announced March 2015.
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Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
Authors:
F. Volmer,
M. Drögeler,
T. Pohlmann,
G. Güntherodt,
C. Stampfer,
B. Beschoten
Abstract:
Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit spin transport parameters such as the spin lifetime of the whole device. An important task is to evaluate the quality of the oxide barriers of both spin injection…
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Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit spin transport parameters such as the spin lifetime of the whole device. An important task is to evaluate the quality of the oxide barriers of both spin injection and detection contacts in a fabricated device. To address this issue, we discuss the influence of spatially inhomogeneous oxide barriers and especially conducting pinholes within the barrier on the background signal in non-local measurements of graphene/MgO/Co spin-valve devices. By both simulations and reference measurements on devices with non-ferromagnetic electrodes, we demonstrate that the background signal can be caused by inhomogeneous current flow through the oxide barriers. As a main result, we demonstrate the existence of charge accumulation next to the actual spin accumulation signal in non-local voltage measurements, which can be explained by a redistribution of charge carriers by a perpendicular magnetic field similar to the classical Hall effect. Furthermore, we present systematic studies on the phase of the low frequency non-local ac voltage signal which is measured in non-local spin measurements when applying ac lock-in techniques. This phase has so far widely been neglected in the analysis of non-local spin transport. We demonstrate that this phase is another hallmark of the homogeneity of the MgO spin injection and detection barriers. We link backgate dependent changes of the phase to the interplay between the capacitance of the oxide barrier to the quantum capacitance of graphene.
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Submitted 19 December, 2014;
originally announced December 2014.
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Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
Authors:
F. Volmer,
M. Drögeler,
E. Maynicke,
N. von den Driesch,
M. L. Boschen,
G. Güntherodt,
C. Stampfer,
B. Beschoten
Abstract:
By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear characteristics in the respective differential dV-dI-curves. With this manipulation of the contacts both spin lifetime and amplitude of the spin signal can…
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By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear characteristics in the respective differential dV-dI-curves. With this manipulation of the contacts both spin lifetime and amplitude of the spin signal can significantly be increased by a factor of seven in the same device. This demonstrates that contact-induced spin dephasing is the bottleneck for spin transport in graphene devices with small $R_cA$ values. With increasing $R_cA$ values, we furthermore observe the appearance of a second charge neutrality point (CNP) in gate dependent resistance measurements. Simultaneously, we observe a decrease of the gate voltage separation between the two CNPs. The strong enhancement of the spin transport properties as well as the changes in charge transport are explained by a gradual suppression of a Co/graphene interaction by improving the oxide barrier during oxygen treatment.
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Submitted 6 August, 2014;
originally announced August 2014.
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Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
Authors:
Marc Drögeler,
Frank Volmer,
Maik Wolter,
Bernat Terrés,
Kenji Watanabe,
Takashi Taniguchi,
Gernot Güntherodt,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that roo…
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We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$μ$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.
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Submitted 10 June, 2014;
originally announced June 2014.
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Zinc Oxide - From Dilute Magnetic Do** to Spin Transport
Authors:
Matthias Opel,
Sebastian T. B. Goennenwein,
Matthias Althammer,
Karl-Wilhelm Nielsen,
Eva-Maria Karrer-Müller,
Sebastian Bauer,
Konrad Senn,
Christoph Schwark,
Christian Weier,
Gernot Güntherodt,
Bernd Beschoten,
Rudolf Gross
Abstract:
During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic do**. In comprehensive investigation of ZnO:Co thin films based on the combined measurement of macroscopic and microscopic properties, we find no evidence for carrier-mediated itine…
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During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic do**. In comprehensive investigation of ZnO:Co thin films based on the combined measurement of macroscopic and microscopic properties, we find no evidence for carrier-mediated itinerant ferromagnetism. Phase-pure, crystallographically excellent ZnO:Co is uniformly paramagnetic. Superparamagnetism arises when phase separation or defect formation occurs, due to nanometer-sized metallic precipitates. Other compounds like ZnO:(Li,Ni) and ZnO:Cu do not exhibit indication of ferromagnetism.
Second, its small spin-orbit coupling and correspondingly large spin coherence length makes ZnO suitable for transporting or manipulating spins in spintronic devices. From optical pump/optical probe experiments, we find a spin dephasing time of the order of 15 ns at low temperatures which we attribute to electrons bound to Al donors. In all-electrical magnetotransport measurements, we successfully create and detect a spin-polarized ensemble of electrons and transport this spin information across several nanometers. We derive a spin lifetime of 2.6 ns for these itinerant spins at low temperatures, corresponding well to results from an electrical pump/optical probe experiment.
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Submitted 23 September, 2013;
originally announced September 2013.
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Role of MgO barriers for spin and charge transport in Co/MgO/graphene non-local spin-valve devices
Authors:
F. Volmer,
M. Drögeler,
E. Maynicke,
N. von den Driesch,
M. L. Boschen,
G. Güntherodt,
B. Beschoten
Abstract:
We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our single layer devices. This general trend is only observed in devices with large contact resistances. Furthermore, we observe a second Dirac peak in devices wit…
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We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our single layer devices. This general trend is only observed in devices with large contact resistances. Furthermore, we observe a second Dirac peak in devices with long spin lifetimes. This results from charge transport underneath the contacts. In contrast, all devices with low ohmic contact resistances only exhibit a single Dirac peak. Additionally, the spin lifetime is significantly reduced indicating that an additional spin dephasing occurs underneath the electrodes.
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Submitted 25 September, 2013; v1 submitted 28 May, 2013;
originally announced May 2013.
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Intrinsic Correlated Electronic Structure of CrO2 Revealed by Hard X-ray Photoemission Spectroscopy
Authors:
M. Sperlich,
C. König,
G. Güntherodt,
A. Sekiyama,
G. Funabashi,
M. Tsunekawa,
S. Imada,
A. Shigemoto,
K. Okada,
A. Higashiya,
M. Yabashi,
K. Tamasaku,
T. Ishikawa,
V. Renken,
T. Allmers,
M. Donath,
S. Suga
Abstract:
Bulk-sensitive hard x-ray photoemission spectroscopy (HAXPES) reveals for as-grown epitaxial films of half-metallic ferromagnetic CrO2(100) a pronounced screening feature in the Cr 2p3/2 core level and an asymmetry in the O 1s core level. This gives evidence of a finite, metal-type Fermi edge, which is surprisingly not observed in HAXPES. A spectral weight shift in HAXPES away from the Fermi energ…
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Bulk-sensitive hard x-ray photoemission spectroscopy (HAXPES) reveals for as-grown epitaxial films of half-metallic ferromagnetic CrO2(100) a pronounced screening feature in the Cr 2p3/2 core level and an asymmetry in the O 1s core level. This gives evidence of a finite, metal-type Fermi edge, which is surprisingly not observed in HAXPES. A spectral weight shift in HAXPES away from the Fermi energy is attributed to single-ion recoil effects due to high energy photoelectrons. In conjunction with inverse PES the intrinsic correlated Mott-Hubbard-type electronic structure is unravelled, yielding an averaged Coulomb correlation energy Uav ~ 3.2 eV.
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Submitted 8 April, 2013;
originally announced April 2013.
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Triggering and probing of phase-coherent spin packets by time-resolved spin transport across an Fe/GaAs Schottky barrier
Authors:
L. R. Schreiber,
C. Schwark,
S. Richter,
C. Weier,
G. Güntherodt,
C. Adelmann,
C. J. Palmstrom,
X. Lou,
P. A. Crowell,
B. Beschoten
Abstract:
Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin…
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Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin precession of optically created spin packets in n-GaAs can be probed electrically by spin-polarized photo-current pulses. The injection and detection experiments are not direct reciprocals of each other. In particular, we find that interfacial spin accumulation generated by the photocurrent pulse plays a critical role in time-resolved electrical spin detection.
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Submitted 19 April, 2012;
originally announced April 2012.
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Intermediate state switching dynamics in magnetic double layer nanopillars grown by molecular beam epitaxy
Authors:
N. Müsgens,
T. Maassen,
E. Maynicke,
S. Rizwan Ali,
A. Heiss,
R. Ghadimi,
J. Mayer,
G. Güntherodt,
B. Beschoten
Abstract:
We observe a stable intermediate resistance switching state in the current perpendicular to plane geometry for all Co/Cu/Co double layer nanopillar junctions grown by molecular beam epitaxy. This novel state has a resistance between the resistances of the parallel and antiparallel alignment of both Co-layer magnetizations. The state, which originates from an additional in-plane magnetic easy axis,…
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We observe a stable intermediate resistance switching state in the current perpendicular to plane geometry for all Co/Cu/Co double layer nanopillar junctions grown by molecular beam epitaxy. This novel state has a resistance between the resistances of the parallel and antiparallel alignment of both Co-layer magnetizations. The state, which originates from an additional in-plane magnetic easy axis, can be reached by spin transfer torque switching or by an external magnetic field. In addition to spin torque-induced coherent small-angle spin wave modes we observe a broad microwave emission spectrum. The latter is attributed to incoherent magnetic excitations that lead to a switching between the intermediate state and the parallel or antiparallel alignment of both ferromagnetic layers. We conclude that the additional magnetic easy axis suppresses a stable trajectory of coherent large-angle precession, which is not observed in our samples.
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Submitted 13 January, 2012;
originally announced January 2012.
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Frequency domain studies of current-induced magnetization dynamics in single magnetic-layer nanopillars
Authors:
N. Müsgens,
S. Fahrendorf,
T. Maassen,
A. Heiss,
J. Mayer,
B. Özyilmaz,
B. Beschoten,
G. Güntherodt
Abstract:
Spin transfer torque-induced high-frequency dynamics of single thin cobalt-layer nanopillars of circular and elliptical shape have been observed directly. Two types of precessional modes can be identified as a function of magnetic field perpendicular to the layer plane, excited for negative current polarity only. They are assigned to vortex-core and transverse spin-wave excitations, which corrobor…
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Spin transfer torque-induced high-frequency dynamics of single thin cobalt-layer nanopillars of circular and elliptical shape have been observed directly. Two types of precessional modes can be identified as a function of magnetic field perpendicular to the layer plane, excited for negative current polarity only. They are assigned to vortex-core and transverse spin-wave excitations, which corroborate recent model predictions. The observed narrow linewidth of 4 MHz at room temperature indicates the high coherence of the magnetic excitations.
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Submitted 11 January, 2012;
originally announced January 2012.
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Origin of training effect of exchange bias in Co/CoO due to irreversible thermoremanent magnetization of the magnetically diluted antiferromagnet
Authors:
S. R. Ali,
M. R. Ghadimi,
M. Fecioru-Morariu,
B. Beschoten,
G. Güntherodt
Abstract:
The irreversible thermoremanent magnetization of a sole, magnetically diluted epitaxial antiferromagnetic Co$_{1-y}$O(100) layer is determined by the mean of its thermoremanent magnetizations at positive and negative remanence. During hysteresis-loop field cycling, thermoremanent magnetization exhibits successive reductions, consistent with the training effect (TE) of the exchange bias measured fo…
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The irreversible thermoremanent magnetization of a sole, magnetically diluted epitaxial antiferromagnetic Co$_{1-y}$O(100) layer is determined by the mean of its thermoremanent magnetizations at positive and negative remanence. During hysteresis-loop field cycling, thermoremanent magnetization exhibits successive reductions, consistent with the training effect (TE) of the exchange bias measured for the corresponding Co$_{1-y}$O(100)/Co bilayer. The TE of exchange bias is shown to have its microscopic origin in the TE of the irreversible thermoremanent magnetization of the magnetically diluted AFM.
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Submitted 4 January, 2012;
originally announced January 2012.
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Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs
Authors:
S. Kuhlen,
K. Schmalbuch,
M. Hagedorn,
P. Schlammes,
M. Patt,
M. Lepsa,
G. Güntherodt,
B. Beschoten
Abstract:
Full electric-field control of spin orientations is one of the key tasks in semiconductor spintronics. We demonstrate that electric field pulses can be utilized for phase-coherent +/- pi spin rotation of optically generated electron spin packets in InGaAs epilayers detected by time-resolved Faraday rotation. Through spin-orbit interaction, the electric-field pulses act as local magnetic field puls…
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Full electric-field control of spin orientations is one of the key tasks in semiconductor spintronics. We demonstrate that electric field pulses can be utilized for phase-coherent +/- pi spin rotation of optically generated electron spin packets in InGaAs epilayers detected by time-resolved Faraday rotation. Through spin-orbit interaction, the electric-field pulses act as local magnetic field pulses (LMFP). By the temporal control of the LMFP, we can turn on and off electron spin precession and thereby rotate the spin direction into arbitrary orientations in a 2-dimensional plane. Furthermore, we demonstrate a spin echo-type spin drift experiment and find an unexpected partial spin rephasing, which is evident by a doubling of the spin dephasing time.
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Submitted 31 August, 2012; v1 submitted 21 July, 2011;
originally announced July 2011.
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Towards wafer scale fabrication of graphene based spin valve devices
Authors:
Ahmet Avsar,
Tsung-Yeh Yang,
Su-Kang Bae,
Jayakumar Balakrishnan,
Frank Volmer,
Manu Jaiswal,
Zheng Yi,
Syed Rizwan Ali,
Gernot Güntherodt,
Byung-Hee Hong,
Bernd Beschoten,
Barbaros Özyilmaz
Abstract:
We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that CVD specific structural differences such as nano-ripples and grain bou…
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We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that CVD specific structural differences such as nano-ripples and grain boundaries do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications.
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Submitted 25 April, 2011;
originally announced April 2011.
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Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature
Authors:
T. -Y. Yang,
J. Balakrishnan,
F. Volmer,
A. Avsar,
M. Jaiswal,
J. Samm,
S. R. Ali,
A. Pachoud,
M. Zeng,
M. Popinciuc,
G. Güntherodt,
B. Beschoten,
B. Özyilmaz
Abstract:
We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of…
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We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of up to 2 ns are observed in samples with the lowest mobility. These times are an order of magnitude longer than any values previously reported for single layer graphene (SLG). We discuss the role of intrinsic and extrinsic factors that could lead to the dominance of D'yakonov-Perel' spin scattering in BLG. In comparison to SLG, significant changes in the density dependence of $τ_s$ are observed as a function of temperature.
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Submitted 20 June, 2011; v1 submitted 6 December, 2010;
originally announced December 2010.
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Two-dimensional optical control of electron spin orientation by linearly polarized light in InGaAs
Authors:
K. Schmalbuch,
S. Göbbels,
Ph. Schäfers,
Ch. Rodenbücher,
P. Schlammes,
Th. Schäpers,
M. Lepsa,
G. Güntherodt,
B. Beschoten
Abstract:
Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InGaAs. By changing the incident linear polarization direction we can selectively excite spins both in polar and transverse directions. Thes…
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Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InGaAs. By changing the incident linear polarization direction we can selectively excite spins both in polar and transverse directions. These directions can be identified by the phase during spin precession using time-resolved Faraday rotation. We show that the spin orientations do not depend on the crystal axes suggesting an extrinsic excitation mechanism.
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Submitted 1 August, 2010;
originally announced August 2010.
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Magnetite: Raman study of the high-pressure and low-temperature effects
Authors:
L. V. Gasparov,
D. Arenas,
K. -Y. Choi,
G. Guntherodt,
H. Berger,
L. Forro,
G. Margaritondo,
V. V. Struzhkin,
R. Hemley
Abstract:
We report the results of a low-temperature (300K-15K) high-pressure (up to 22GPa) Raman study of the Verwey transition in magnetite (Fe3O4). We use additional Raman modes observed below the Verwey transition to determine how the transition temperature changes with the quasihydrostatic pressure. Increase of the pressure results in the linear decrease of the Verwey transition temperature, with no…
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We report the results of a low-temperature (300K-15K) high-pressure (up to 22GPa) Raman study of the Verwey transition in magnetite (Fe3O4). We use additional Raman modes observed below the Verwey transition to determine how the transition temperature changes with the quasihydrostatic pressure. Increase of the pressure results in the linear decrease of the Verwey transition temperature, with no discontinuity. The corresponding pressure coefficient dTV/dP is found to be ~ -5.2 K/GPa. Such a decrease is substantially larger than the one predicted by the mean-field Coulomb interaction model of the transition.
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Submitted 14 July, 2009;
originally announced July 2009.
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Electronic Raman scattering in Magnetite, Spin vs. Charge gap
Authors:
L. Gasparov,
A. Rush,
G. Guntherodt,
H. Berger
Abstract:
We report Raman scattering data of single crystals of magnetite (Fe3O4) with Verwey transition temperatures (Tv) of 123 and 117K, respectively. Both single crystals reveal broad electronic background extending up to 900 wavenumbers (~110 meV). Redistribution of this background is observed when samples are cooled below Tv. In particular, spectra of the low temperature phase show diminished backgr…
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We report Raman scattering data of single crystals of magnetite (Fe3O4) with Verwey transition temperatures (Tv) of 123 and 117K, respectively. Both single crystals reveal broad electronic background extending up to 900 wavenumbers (~110 meV). Redistribution of this background is observed when samples are cooled below Tv. In particular, spectra of the low temperature phase show diminished background below 300 wavenumbers followed by an enhancement of the electronic background between 300 and 400 wavenumbers. To enhance the effect of this background redistribution we divide the spectra just below the transition by the spectra just above the transition. A resultant broad peak-like feature is observed, centered at 370 wavenumbers (45 meV). The peak position of this feature does not scale with the transition temperature. We discuss two alternative assignments of this feature to a spin or charge gap in magnetite.
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Submitted 9 July, 2009;
originally announced July 2009.
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Map** of spin lifetimes to electronic states in n-type GaAs near the metal-insulator transition
Authors:
L. Schreiber,
M. Heidkamp,
T. Rohleder,
B. Beschoten,
G. Güntherodt
Abstract:
The longest spin lifetimes in bulk n-GaAs exceed 100 ns for do** concentrations near the metal-insulator transition (J.M. Kikkawa, D.D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998)). The respective electronic states have yet not been identified. We therefore investigate the energy dependence of spin lifetimes in n-GaAs by time-resolved Kerr rotation. Spin lifetimes vary by three orders of magni…
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The longest spin lifetimes in bulk n-GaAs exceed 100 ns for do** concentrations near the metal-insulator transition (J.M. Kikkawa, D.D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998)). The respective electronic states have yet not been identified. We therefore investigate the energy dependence of spin lifetimes in n-GaAs by time-resolved Kerr rotation. Spin lifetimes vary by three orders of magnitude as a function of energy when occupying donor and conduction band states. The longest spin lifetimes (>100 ns) are assigned to delocalized donor band states, while conduction band states exhibit shorter spin lifetimes. The occupation of localized donor band states is identified by short spin lifetimes (~300 ps) and a distinct Overhauser shift due to dynamic nuclear polarization.
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Submitted 13 June, 2007;
originally announced June 2007.
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Complex ferromagnetic state and magnetocaloric effect in single crystalline Nd_{0.7}Sr_{0.3}MnO_{3}
Authors:
R. Venkatesh,
M. Pattabiraman,
S. Angappane,
G. Rangarajan,
K. Sethupathi,
Jessy Karatha,
M. Fecioru-Morariu,
R. M. Ghadimi,
G. Guntherodt
Abstract:
The magnetocaloric effect in single crystalline Nd_{0.7}Sr_{0.3}MnO_{3} is investigated by measuring the field-induced adiabatic change in temperature which reveals a single negative peak around 130 K well below the Curie temperature (T_C=203 K). In order to understand this unusual magnetocaloric effect, we invoke the reported {55}^Mn spin-echo nuclear magnetic resonance, electron magnetic reson…
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The magnetocaloric effect in single crystalline Nd_{0.7}Sr_{0.3}MnO_{3} is investigated by measuring the field-induced adiabatic change in temperature which reveals a single negative peak around 130 K well below the Curie temperature (T_C=203 K). In order to understand this unusual magnetocaloric effect, we invoke the reported {55}^Mn spin-echo nuclear magnetic resonance, electron magnetic resonance and polarized Raman scattering measurements on Nd_{0.7}Sr_{0.3}MnO_{3}. We show that this effect is a manifestation of a competition between the double exchange mechanism and correlations arising from coupled spin and lattice degrees of freedom which results in a complex ferromagnetic state. The critical behavior of Nd_{0.7}Sr_{0.3}MnO_{3} near Curie temperature is investigated to study the influence of the coupled degrees of freedom. We find a complicated behavior at low fields in which the order of the transition could not be fixed and a second-order-like behavior at high fields.
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Submitted 12 June, 2007;
originally announced June 2007.
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Effects of nonmagnetic metal additives in metallic antiferromagnets on exchange bias
Authors:
Marian Fecioru-Morariu,
Syed Rizwan Ali,
Cristian Papusoi,
Martin Sperlich,
Gernot Guentherodt
Abstract:
The effect of nonmagnetic metal additives in metallic antiferromagnets (AFMs) on the exchange bias (EB) has been investigated from a structural, magnetic and Monte Carlo simulation point of view in bilayers of CoFe/IrMn:Cu. Dilution by Cu atoms throughout the volume of the AFM IrMn give rise to an enhanced EB field for temperatures between 5 K and 300 K. The thermoremanent magnetization of the A…
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The effect of nonmagnetic metal additives in metallic antiferromagnets (AFMs) on the exchange bias (EB) has been investigated from a structural, magnetic and Monte Carlo simulation point of view in bilayers of CoFe/IrMn:Cu. Dilution by Cu atoms throughout the volume of the AFM IrMn give rise to an enhanced EB field for temperatures between 5 K and 300 K. The thermoremanent magnetization of the AFM-only is also enhanced with dilution, shows qualitatively the same temperature dependence as EB field and is at the origin of the EB mechanism. Monte Carlo simulations based on a Heisenberg model and temperature dependent uncompensated AFM moments confirm well the experimental results.
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Submitted 8 January, 2007;
originally announced January 2007.
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Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells
Authors:
L. Schreiber,
D. Duda,
B. Beschoten,
G. Güntherodt,
H. -P. Schönherr,
J. Herfort
Abstract:
Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001)-orientation. From the suppression of spin precession, the ratio of in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio increases with In concent…
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Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001)-orientation. From the suppression of spin precession, the ratio of in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio increases with In concentration in agreement with theory, a surprisingly high anisotropy of 480 is observed for the broadest quantum well, when expressed in terms of spin relaxation times.
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Submitted 30 May, 2007; v1 submitted 5 January, 2007;
originally announced January 2007.
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Low-frequency noise and tunnelling magnetoresistance in Fe(110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions
Authors:
R. Guerrero,
F. G. Aliev,
R. Villar,
J. Hauch,
M. Fraune,
G. Guntherodt,
K. Rott,
H. Bruckl,
G. Reiss
Abstract:
We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The evaluated MgO energy barrier (0.50+/-0.08 eV), the barrier width (13.1+/-0.5 angstrom) as well as the resistance times area product (7+/-1 Mohmsum2) show relatively s…
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We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The evaluated MgO energy barrier (0.50+/-0.08 eV), the barrier width (13.1+/-0.5 angstrom) as well as the resistance times area product (7+/-1 Mohmsum2) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. The noise power, though exhibiting large variation, was observed to be roughly anticorrelated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behaviour could be related to an interplay between the magnetic state and the local barrier defects structure of the epitaxial MTJs
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Submitted 18 September, 2006;
originally announced September 2006.
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Dilution dependence of blocking temperature distribution in the exchange bias system CoO(111)/Co(111)
Authors:
M. R. Ghadimi,
M. Fecioru-Morariu,
B. Beschoten,
G. Guentherodt
Abstract:
In epitaxially grown CoO(111)/Co(111) bilayers we have determined the blocking temperature distribution f(Tb), which is correlated with the antiferromagnetic domain size (z) distribution f(z). The latter is probed by reversing antiferromagnetic domains at successively higher temperatures in the reversed cooling field. The implementation of nonmagnetic defects throughout the antiferromagnet CoO i…
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In epitaxially grown CoO(111)/Co(111) bilayers we have determined the blocking temperature distribution f(Tb), which is correlated with the antiferromagnetic domain size (z) distribution f(z). The latter is probed by reversing antiferromagnetic domains at successively higher temperatures in the reversed cooling field. The implementation of nonmagnetic defects throughout the antiferromagnet CoO is found to give rise to a broadening of the domain size distribution f(z) within CoO as evidenced by a broadened f(Tb). This broadening is responsible for an enhancement of the exchange bias field.
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Submitted 20 June, 2006;
originally announced June 2006.
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Charge density waves in Sr_14-xCa_xCu_24O_41: electron correlations vs. structural effects
Authors:
K. -Y. Choi,
M. Grove,
P. Lemmens,
M. Fischer,
G. Güntherodt,
U. Ammerahl,
B. Büchner,
G. Dhalenne,
A. Revcolevschi,
J. Akimitsu
Abstract:
We report inelastic light scattering experiments in the spin-chain and ladder system Sr_14-xCa_xCu_24O_41. A depletion of an electronic background is observed for 0 < x < 5 at low temperatures and with light polarization both parallel to the leg and rung directions. This points to the formation of 2D charge density wave in the ladders. Furthermore, the Ca-substitution dependence of the 305- and…
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We report inelastic light scattering experiments in the spin-chain and ladder system Sr_14-xCa_xCu_24O_41. A depletion of an electronic background is observed for 0 < x < 5 at low temperatures and with light polarization both parallel to the leg and rung directions. This points to the formation of 2D charge density wave in the ladders. Furthermore, the Ca-substitution dependence of the 305- and 249-cm-1 modes, sensitive to the lattice modulations of the respective chain and ladder system, suggests that the charge dynamics in the ladders is strongly influenced by the structural incommensurability.
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Submitted 10 January, 2006;
originally announced January 2006.
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Focused-ion-beam milling based nanostencil mask fabrication for spin transfer torque studies
Authors:
B. Oezyilmaz,
G. Richter,
N. Muesgens,
M. Fraune,
M. Hawraneck,
B. Beschoten,
G. Guentherodt,
M. Bueckins,
J. Mayer
Abstract:
Focused-ion-beam milling is used to fabricate nanostencil masks suitable for the fabrication of magnetic nanostructures relevant for spin transfer torque studies. Nanostencil masks are used to define the device dimensions prior to the growth of the thin film stack. They consist of a wet etch resistant top layer and an insulator on top of a pre-patterned bottom electrode. The insulator supports a…
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Focused-ion-beam milling is used to fabricate nanostencil masks suitable for the fabrication of magnetic nanostructures relevant for spin transfer torque studies. Nanostencil masks are used to define the device dimensions prior to the growth of the thin film stack. They consist of a wet etch resistant top layer and an insulator on top of a pre-patterned bottom electrode. The insulator supports a hard mask and gives rise to an undercut by its selective etching. The approach is demonstrated by fabricating current perpendicular to the plane Co/Cu/Co nanopillar junctions, which exhibit current-induced magnetization dynamics.
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Submitted 13 December, 2005;
originally announced December 2005.
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Effect of Coulomb interaction on the spin-galvanic mode in a two dimensional electron gas with Rashba spin-orbit interaction
Authors:
Ya. B. Bazaliy,
B. V. Bazaliy,
G. Guntherodt,
S. S. P. Parkin
Abstract:
Recently a new propagating mode of coupled charge and spin oscillations was predicted in a two dimensional electron gas with a sufficiently strong Rashba interaction. We show that Coulomb interactions qualitatively modifies the spectrum and increases the characteristic wavelength of this mode by orders of magnitude, but does not suppress it. An absorption experiment that can conclusively detect…
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Recently a new propagating mode of coupled charge and spin oscillations was predicted in a two dimensional electron gas with a sufficiently strong Rashba interaction. We show that Coulomb interactions qualitatively modifies the spectrum and increases the characteristic wavelength of this mode by orders of magnitude, but does not suppress it. An absorption experiment that can conclusively detect the presence or absence of such a propagating mode is proposed.
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Submitted 22 November, 2005;
originally announced November 2005.
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Asymmetric magnetization reversal in the exchange bias system Fe/FeF_2 studied by MOKE
Authors:
A. Tillmanns,
S. Oertker,
B. Beschoten,
G. Güntherodt,
J. Eisenmenger,
Ivan K. Schuller
Abstract:
The asymmetry of the magnetization reversal process in exchange biased Fe/FeF$_2$ has been studied by magneto-optical Kerr effect. Qualitatively different transverse magnetization loops are observed for different directions of the cooling and the measuring field. These loops can be simulated by a simple calculation of the total energy density which includes the relevant magnetic anisotropies and…
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The asymmetry of the magnetization reversal process in exchange biased Fe/FeF$_2$ has been studied by magneto-optical Kerr effect. Qualitatively different transverse magnetization loops are observed for different directions of the cooling and the measuring field. These loops can be simulated by a simple calculation of the total energy density which includes the relevant magnetic anisotropies and coherent magnetization rotation only. Asymmetric magnetization reversal is shown to originate from the unidirectional anisotropy and may be observed if the external measuring field is not collinear with either the exchange bias or the easy axis of the antiferromagnetic epitaxial FeF$_2$(110) layer.
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Submitted 16 September, 2005; v1 submitted 15 September, 2005;
originally announced September 2005.
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Role of structural defects on exchange bias in the epitaxial CoO/Co system
Authors:
M. R . Ghadimi,
B. Beschoten,
G. Güntherodt
Abstract:
We have studied the influence of non-magnetic defects throughout the antiferromagnet Co_{1-y}O on the exchange bias (EB) in epitaxially grown Co_{1-y}O/Co bilayers. These defects are either substitutional or structural (twin boundaries and surface morphology) which both lead to an increase of the EB-field. We find a dominance of twin boundaries over surface morphology (roughness) in enhancing EB…
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We have studied the influence of non-magnetic defects throughout the antiferromagnet Co_{1-y}O on the exchange bias (EB) in epitaxially grown Co_{1-y}O/Co bilayers. These defects are either substitutional or structural (twin boundaries and surface morphology) which both lead to an increase of the EB-field. We find a dominance of twin boundaries over surface morphology (roughness) in enhancing EB which is consistent with the domain state model for exchange bias. In contrast, the crystal orientation of the Co_{1-y}O layer does not show a significant effect on the EB in this system.
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Submitted 31 August, 2005;
originally announced September 2005.
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Magneto-optical study of magnetization reversal asymmetry in exchange bias
Authors:
A. Tillmanns,
S. Oertker,
B. Beschoten,
G. Güntherodt,
C. Leighton,
Ivan K. Schuller,
J. Nogues
Abstract:
The asymmetric magnetization reversal in exchange biased Fe/MnF$_{2}$ involves coherent (Stoner-Wohlfarth) magnetization rotation into an intermediate, stable state perpendicular to the applied field. We provide here experimentally tested analytical conditions for the unambiguous observation of both longitudinal and transverse magnetization components using the magneto-optical Kerr effect. This…
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The asymmetric magnetization reversal in exchange biased Fe/MnF$_{2}$ involves coherent (Stoner-Wohlfarth) magnetization rotation into an intermediate, stable state perpendicular to the applied field. We provide here experimentally tested analytical conditions for the unambiguous observation of both longitudinal and transverse magnetization components using the magneto-optical Kerr effect. This provides a fast and powerful probe of coherent magnetization reversal as well as its chirality. Surprisingly, the sign and asymmetry of the transverse magnetization component of Fe/MnF$_{2}$ change with the angle between cooling and measurement fields.
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Submitted 26 August, 2005; v1 submitted 26 August, 2005;
originally announced August 2005.
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Hole stripe and orbital fluctuating state in LaMnO$_{3+δ}$ ($0.085\leq δ\leq0.125$) unveiled by Raman spectroscopy
Authors:
Yu. G. Pashkevich,
V. P. Gnezdilov,
P. Lemmens,
K. -Y. Choi,
G. Güntherodt,
A. V. Eremenko,
D. Nabok,
V. I. Kamenev,
S. N. Barilo,
S. V. Shiryaev,
A. G. Soldatov
Abstract:
Giant softening by 30 cm$^{-1}$ of the 490- and 620-cm$^{-1}$ modes is observed by Raman scattering measurements below the Curie temperature of single crystalline LaMnO$_{3+δ}$ ($0.085\leq δ\leq0.125$). A pseudogap-like electronic continuum and a Fano antiresonance at 144 cm$^{-1}$ appear below the charge ordering temperature. This gives evidence for the presence of an orbital fluctuating state…
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Giant softening by 30 cm$^{-1}$ of the 490- and 620-cm$^{-1}$ modes is observed by Raman scattering measurements below the Curie temperature of single crystalline LaMnO$_{3+δ}$ ($0.085\leq δ\leq0.125$). A pseudogap-like electronic continuum and a Fano antiresonance at 144 cm$^{-1}$ appear below the charge ordering temperature. This gives evidence for the presence of an orbital fluctuating state and the formation of a hole stripe, respectively. This is further corroborated by a unstructured broadening and shifting of multiphonon features with increasing do** $δ$. Our study suggests the significance of double exchange mechanism in the charged ordered insulating state.
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Submitted 13 June, 2005;
originally announced June 2005.
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Orbiton-mediated multi-phonon scattering in La$_{1-x}$Sr$_x$MnO$_3$
Authors:
K. -Y. Choi,
P. Lemmens,
G. Güntherodt,
Yu. G. Pashkevich,
V. P. Gnezdilov,
P. Reutler,
L. Pinsard-Gaudart,
B. Büchner,
A. Revcolevschi
Abstract:
We report on Raman scattering measurements of single crystalline La$_{1-x}$Sr$_x$MnO$_3$ ($x$=0, 0.06, 0.09 and 0.125), focusing on the high frequency regime. We observe multi-phonon scattering processes up to fourth-order which show distinct features: (i) anomalies in peak energy and its relative intensity and (ii) a pronounced temperature-, polarization-, and do**-dependence. These features…
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We report on Raman scattering measurements of single crystalline La$_{1-x}$Sr$_x$MnO$_3$ ($x$=0, 0.06, 0.09 and 0.125), focusing on the high frequency regime. We observe multi-phonon scattering processes up to fourth-order which show distinct features: (i) anomalies in peak energy and its relative intensity and (ii) a pronounced temperature-, polarization-, and do**-dependence. These features suggest a mixed orbiton-phonon nature of the observed multi-phonon Raman spectra.
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Submitted 17 March, 2005;
originally announced March 2005.
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Growth and spin-resolved photoelectron spectroscopy of the MgO/Fe(110) system
Authors:
Yu. S. Dedkov,
M. Fonin,
U. Rüdiger,
G. Güntherodt
Abstract:
Electronic and structural properties of ultrathin MgO layers grown on epitaxial Fe(110) films were investigated at room temperature by means of spin-resolved photoelectron spectroscopy, Auger-electron spectroscopy, and low energy electron diffraction. The spin polarization at the Fermi level of the Fe(110) film decreases abruptly with increasing thickness of MgO layer up to 7 Å. This behavior is…
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Electronic and structural properties of ultrathin MgO layers grown on epitaxial Fe(110) films were investigated at room temperature by means of spin-resolved photoelectron spectroscopy, Auger-electron spectroscopy, and low energy electron diffraction. The spin polarization at the Fermi level of the Fe(110) film decreases abruptly with increasing thickness of MgO layer up to 7 Å. This behavior is attributed to the formation of a thin FeO layer at the MgO(111)/Fe(110) interface, attenuating the intrinsic spin polarization.
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Submitted 18 April, 2004;
originally announced April 2004.
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Interplay of structural and electronic phase separation in single crystalline La(2)CuO(4.05) studied by neutron and Raman scattering
Authors:
V. P. Gnezdilov,
Yu. G. Pashkevich,
J. M. Tranquada,
P. Lemmens,
G. Guentherodt,
A. V. Yeremenko,
S. N. Barilo,
S. V. Shiryaev,
L. A. Kurnevich,
P. M. Gehring
Abstract:
We report a neutron and Raman scattering study of a single-crystal of La(2)CuO(4.05) prepared by high temperature electrochemical oxidation. Elastic neutron scattering measurements show the presence of two phases, corresponding to the two edges of the first miscibility gap, all the way up to 300 K. An additional oxygen redistribution, driven by electronic energies, is identified at 250 K in Rama…
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We report a neutron and Raman scattering study of a single-crystal of La(2)CuO(4.05) prepared by high temperature electrochemical oxidation. Elastic neutron scattering measurements show the presence of two phases, corresponding to the two edges of the first miscibility gap, all the way up to 300 K. An additional oxygen redistribution, driven by electronic energies, is identified at 250 K in Raman scattering (RS) experiments by the simultaneous onset of two-phonon and two-magnon scattering, which are fingerprints of the insulating phase. Elastic neutron scattering measurements show directly an antiferromagnetic ordering below a Néel temperature of T_N =210K. The opening of the superconducting gap manifests itself as a redistribution of electronic Raman scattering below the superconducting transition temperature, T_c = 24K. A pronounced temperature-dependent suppression of the intensity of the (100) magnetic Bragg peak has been detected below T_c. We ascribe this phenomenon to a change of relative volume fraction of superconducting and antiferromagnetic phases with decreasing temperature caused by a form of a superconducting proximity effect.
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Submitted 13 March, 2004;
originally announced March 2004.
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Phonon Raman scattering in LaMn1-xCoxO3 (x = 0, 0.2, 0.3, 0.4, and 1.0)
Authors:
V. P. Gnezdilov,
Yu. G. Pashkevich,
A. V. Yeremenko,
P. Lemmens,
G. Guentherodt,
S. V. Shiryaev,
G. L. Bychkov,
S. N. Barilo
Abstract:
The Raman-active phonons in perovskite-like LaMn1-xCoxO3 (x = 0, 0.2, 0.3, 0.4, and 1.0) were studied by measuring Raman spectra at temperatures of 295 and 5 K. The changes in the spectra with Co do** are correlated with the decrease of orthorhombic distortions. Surprisingly more phonon lines than allowed for the rhombohedral LaCoO3 structure were observed in the spectra.
The Raman-active phonons in perovskite-like LaMn1-xCoxO3 (x = 0, 0.2, 0.3, 0.4, and 1.0) were studied by measuring Raman spectra at temperatures of 295 and 5 K. The changes in the spectra with Co do** are correlated with the decrease of orthorhombic distortions. Surprisingly more phonon lines than allowed for the rhombohedral LaCoO3 structure were observed in the spectra.
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Submitted 22 January, 2004;
originally announced January 2004.
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Existence of orbital polarons in ferromagnetic insulating La$_{1-x}$Sr$_x$MnO$_{3}$ (0.11$<x<$0.14) evidenced by giant phonon softening
Authors:
K. -Y. Choi,
P. Lemmens,
G. Güntherodt,
Yu. G. Pashkevich,
V. P. Gnezdilov,
P. Reutler,
L. Pinsard-Gaudart,
B. Büchner,
A. Revcolevschi
Abstract:
We present an inelastic light scattering study of single crystalline (La$_{1-y}$Pr$_y$)$_{1-x}$Sr$_{x}$MnO$_3$ ($0\leq x\leq0.14$,$y=0$ and $x=1/8$,$0\leq y\leq0.5$). A giant softening up to 20 - 30 cm$^{-1}$ of the Mn-O breathing mode has been observed only for the ferromagnetic insulating (FMI) samples ($0.11\leq x \leq 0.14$) upon cooling below the Curie temperature. With increasing Pr-do**…
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We present an inelastic light scattering study of single crystalline (La$_{1-y}$Pr$_y$)$_{1-x}$Sr$_{x}$MnO$_3$ ($0\leq x\leq0.14$,$y=0$ and $x=1/8$,$0\leq y\leq0.5$). A giant softening up to 20 - 30 cm$^{-1}$ of the Mn-O breathing mode has been observed only for the ferromagnetic insulating (FMI) samples ($0.11\leq x \leq 0.14$) upon cooling below the Curie temperature. With increasing Pr-do** the giant softening is gradually suppressed. This is attributed to a coupling of the breathing mode to orbital polarons which are present in the FMI phase.
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Submitted 12 January, 2004;
originally announced January 2004.
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Magnetic light scattering in low-dimensional quantum spin systems
Authors:
P. Lemmens,
G. Guntherodt,
C. Gros
Abstract:
An overview of one- and two-dimensional quantum spin systems based on transition-metal oxides and halides of current interest is given, such as spin-Peierls, spin-dimer, geometrically frustrated and ladder systems. The most significant and outstanding contributions of magnetic light scattering to the understanding of these materials are discussed and compared to results of other spectroscopies a…
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An overview of one- and two-dimensional quantum spin systems based on transition-metal oxides and halides of current interest is given, such as spin-Peierls, spin-dimer, geometrically frustrated and ladder systems. The most significant and outstanding contributions of magnetic light scattering to the understanding of these materials are discussed and compared to results of other spectroscopies and thermodynamic measurements.
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Submitted 22 January, 2003;
originally announced January 2003.
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Low Energy Singlets in the Excitation Spectrum of the Spin Tetrahedra System Cu_2Te_2O_5Br_2
Authors:
P. Lemmens,
K. Y. Choi,
A. Ionescu,
J. Pommer,
G. Guentherodt,
R. Valenti,
C. Gros,
W. Brenig,
M. Johnsson,
P. Millet,
F. Mila
Abstract:
Low energy Raman scattering of the s=1/2 spin tetrahedra system Cu_2Te_2O_5Br_2 is dominated by an excitation at 18 cm^{-1} corresponding to an energy E_S=0.6Δ, with Δthe spin gap of the compound. For elevated temperatures this mode shows a soft mode-like decrease in energy pointing to an instability of the system. The isostructural reference system Cu_2Te_2O_5Cl_2 with a presumably larger inter…
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Low energy Raman scattering of the s=1/2 spin tetrahedra system Cu_2Te_2O_5Br_2 is dominated by an excitation at 18 cm^{-1} corresponding to an energy E_S=0.6Δ, with Δthe spin gap of the compound. For elevated temperatures this mode shows a soft mode-like decrease in energy pointing to an instability of the system. The isostructural reference system Cu_2Te_2O_5Cl_2 with a presumably larger inter-tetrahedra coupling does not show such a low energy mode. Instead its excitation spectrum and thermodynamic properties are compatible with long range Neel-ordering. We discuss the observed effects in the context of quantum fluctuations and competing ground states.
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Submitted 5 November, 2001;
originally announced November 2001.
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Charge kinks as Raman scatterers in quarter-filled ladders
Authors:
E. Ya. Sherman,
C. Ambrosch-Draxl,
P. Lemmens,
G. Guentherodt,
P. H. M. van Loosdrecht
Abstract:
Charge kinks are considered as fundamental excitations in quarter-filled charge-ordered ladders. The strength of the coupling of the kinks to the three-dimensional lattice depends on their energy. The integrated intensity of Raman scattering by kink-antikink pairs is proportional to $φ^{5}$ or $φ^{4},$ where $φ$ is the order parameter. The exponent is determined by the system parameters and by t…
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Charge kinks are considered as fundamental excitations in quarter-filled charge-ordered ladders. The strength of the coupling of the kinks to the three-dimensional lattice depends on their energy. The integrated intensity of Raman scattering by kink-antikink pairs is proportional to $φ^{5}$ or $φ^{4},$ where $φ$ is the order parameter. The exponent is determined by the system parameters and by the strength of the electron-phonon coupling.
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Submitted 14 May, 2001;
originally announced May 2001.
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Asymmetric flux pinning in laterally nanostructured ferromagnetic / superconducting bilayers
Authors:
M. Lange,
M. J. Van Bael,
L. Van Look,
K. Temst,
J. Swerts,
G. Guentherodt,
V. V. Moshchalkov,
Y. Bruynseraede
Abstract:
We investigated the pinning of flux lines in a superconducting film by a regular array of magnetic antidots. The sample consists of a Co/Pt multilayer with perpendicular magnetic anisotropy in which a regular pattern of submicron holes is introduced and which is covered by a type-II superconducting Pb film. The resulting ferromagnetic/superconducting heterostructure shows a pronounced asymmetric…
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We investigated the pinning of flux lines in a superconducting film by a regular array of magnetic antidots. The sample consists of a Co/Pt multilayer with perpendicular magnetic anisotropy in which a regular pattern of submicron holes is introduced and which is covered by a type-II superconducting Pb film. The resulting ferromagnetic/superconducting heterostructure shows a pronounced asymmetric magnetization curve with respect to the field polarity. This asymmetry clearly demonstrates that the magnetic contribution dominates the pinning potential imposed by the magnetic antidots on the superconducting film.
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Submitted 9 January, 2002; v1 submitted 22 December, 2000;
originally announced December 2000.
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Structural Phase Transition in the 2D Spin Dimer Compound SrCu2(BO3)2
Authors:
K. Sparta,
G. J. Redhammer,
P. Roussel,
G. Heger,
G. Roth,
P. Lemmens,
A. Ionescu,
M. Grove,
G. Guentherodt,
F. Huening,
H. Lueken,
H. Kageyama,
K. Onizuka,
Y. Ueda
Abstract:
A displacive, 2nd order structural phase transition at Ts=395 K from space group I`4 2 m below Ts to I 4/m c m above Ts has been discovered in the two-dimensional spin dimer compound SrCu2(BO3)2. The temperature evolution of the structure in both phases has been studied by X-ray diffraction and Raman scattering, supplemented by differential scanning calorimetry and SQUID magnetometry. The implic…
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A displacive, 2nd order structural phase transition at Ts=395 K from space group I`4 2 m below Ts to I 4/m c m above Ts has been discovered in the two-dimensional spin dimer compound SrCu2(BO3)2. The temperature evolution of the structure in both phases has been studied by X-ray diffraction and Raman scattering, supplemented by differential scanning calorimetry and SQUID magnetometry. The implications of this transition and of the observed phonon anomalies in Raman scattering for spin-phonon and interlayer coupling in this quantum spin system will be discussed.
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Submitted 20 December, 2000;
originally announced December 2000.
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Collective Singlet Excitations and Evolution of Raman Spectral Weights in the 2D Spin Dimer Compound SrCu2(BO3)2
Authors:
Peter Lemmens,
M. Grove,
M. Fischer,
G. Guntherodt,
Valeri N. Kotov,
H. Kageyama,
K. Onizuka,
Y. Ueda
Abstract:
We present a Raman light scattering study of the two-dimensional quantum spin system SrCu2(BO3)2 and show that the magnetic excitation spectrum has a rich structure, including several well-defined bound state modes at low temperature, and a scattering continuum and quasielastic light scattering contributions at high temperature. The key to the understanding of the unique features of SrCu2(BO3)2…
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We present a Raman light scattering study of the two-dimensional quantum spin system SrCu2(BO3)2 and show that the magnetic excitation spectrum has a rich structure, including several well-defined bound state modes at low temperature, and a scattering continuum and quasielastic light scattering contributions at high temperature. The key to the understanding of the unique features of SrCu2(BO3)2 is the presence of strong interactions between well-localized triplet excitations in the network of orthogonal spin dimers realized in this compound. Based on our analysis of the Heisenberg model relevant for this material, we argue that the collective excitations involving two and three-particle singlet bound states have large binding energies and are observed as well-defined peaks in the Raman spectrum.
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Submitted 26 July, 2000; v1 submitted 7 March, 2000;
originally announced March 2000.
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Magnetoelastic coupling and spin excitations in the spin-gap system (VO)$_2$P$_2$O$_7$: A Raman scattering study
Authors:
M. Grove,
P. Lemmens,
G. Güntherodt,
B. C. Sales,
F. Büllesfeld,
W. Assmus
Abstract:
Single crystals of the spin-gap system $\rm (VO)_2P_2O_7$ have been investigated by means of Raman scattering. At temperatures below T=75 K~$\approx 2Δ_{01}({\bf k}=0)$, with $Δ_{01}$ the singlet-triplet gap, a shoulder appears at 47 cm$^{-1}$. An analysis of the polarization selection rules and the temperature dependence of the scattering intensity leads to its identification as a singlet bound…
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Single crystals of the spin-gap system $\rm (VO)_2P_2O_7$ have been investigated by means of Raman scattering. At temperatures below T=75 K~$\approx 2Δ_{01}({\bf k}=0)$, with $Δ_{01}$ the singlet-triplet gap, a shoulder appears at 47 cm$^{-1}$. An analysis of the polarization selection rules and the temperature dependence of the scattering intensity leads to its identification as a singlet bound state with very small binding energy. Therefore in contrast to recent theoretical models the importance of frustration for this compound must be rejected. The observation of a strong anharmonicity of three phonons with energies close to $Δ_{01}$ at the zone boundary and additional quasielastic light scattering, however, both point to a strong spin-phonon coupling in this system. We propose this coupling to be the origin of the second bound triplet state observed in recent neutron scattering experiments.
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Submitted 3 December, 1999;
originally announced December 1999.
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Flux pinning by regular arrays of ferromagnetic dots
Authors:
M. J. Van Bael,
L. Van Look,
K. Temst,
M. Lange,
J. Bekaert,
U. May,
G. Guentherodt,
V. V. Moshchalkov,
Y. Bruynseraede
Abstract:
The pinning of flux lines by two different types of regular arrays of submicron magnetic dots is studied in superconducting Pb films; rectangular Co dots with in-plane magnetization are used as pinning centers to investigate the influence of the magnetic stray field of the dots on the pinning phenomena, whereas multilayered Co/Pt dots with out-of-plane magnetization are used to study the magneti…
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The pinning of flux lines by two different types of regular arrays of submicron magnetic dots is studied in superconducting Pb films; rectangular Co dots with in-plane magnetization are used as pinning centers to investigate the influence of the magnetic stray field of the dots on the pinning phenomena, whereas multilayered Co/Pt dots with out-of-plane magnetization are used to study the magnetic interaction between the flux lines and the magnetic moment of the dots. For both types of pinning arrays, matching anomalies are observed in the magnetization curves versus perpendicular applied field at integer and rational multiples of the first matching field, which correspond to stable flux configurations in the artificially created pinning potential. By varying the magnetic domain structure of the Co dots with in-plane magnetization, a clear influence of the stray field of the dots on the pinning efficiency is found. For the Co/Pt dots with out-of-plane magnetization, a pronounced field asymmetry is observed in the magnetization curves when the dots are magnetized in a perpendicular field prior to the measurement. This asymmetry can be attributed to the interaction of the out-of-plane magnetic moment of the Co/Pt dots with the local field of the flux lines and indicates that flux pinning is stronger when the magnetic moment of the dot and the field of the flux line have the same polarity.
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Submitted 3 November, 1999;
originally announced November 1999.
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Electron-phonon and spin-phonon coupling in NaV$_{2}$O$_{5}$: charge fluctuations effect
Authors:
E. Ya. Sherman,
M. Fischer,
P. Lemmens,
P. H. M. van Loosdrecht,
G. Güntherodt
Abstract:
We show that the asymmetric crystal environment of the V site in the ladder compound NaV$_{2}$O$_{5}$ leads to a strong coupling of vanadium 3d electrons to phonons. This coupling causes fluctuations of the charge on the V ions, and favors a transition to a charge-ordered state at low temperatures. In the low temperature phase the charge fluctuations modulate the spin-spin superexchange interact…
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We show that the asymmetric crystal environment of the V site in the ladder compound NaV$_{2}$O$_{5}$ leads to a strong coupling of vanadium 3d electrons to phonons. This coupling causes fluctuations of the charge on the V ions, and favors a transition to a charge-ordered state at low temperatures. In the low temperature phase the charge fluctuations modulate the spin-spin superexchange interaction, resulting in a strong spin-phonon coupling.
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Submitted 25 October, 1999;
originally announced October 1999.
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Quantum Spin Systems: From Spin Gaps to Pseudo Gaps
Authors:
P. Lemmens,
M. Fischer,
M. Grove,
P. H. M. v. Loosdrecht,
G. Els,
E. Sherman,
C. Pinettes,
G. Güntherodt
Abstract:
Many low dimensional spin systems with a dimerized or ladder-like antiferromagnetic exchange coupling have a gapped excitation spectrum with magnetic bound states within the spin gap. For spin ladders with an even number of legs the existence of spin gaps and within the t-J model a tendency toward superconductivity with d-wave symmetry is predicted. In the following we will characterize the spin…
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Many low dimensional spin systems with a dimerized or ladder-like antiferromagnetic exchange coupling have a gapped excitation spectrum with magnetic bound states within the spin gap. For spin ladders with an even number of legs the existence of spin gaps and within the t-J model a tendency toward superconductivity with d-wave symmetry is predicted. In the following we will characterize the spin excitation spectra of different low dimensional spin systems taking into account strong spin phonon interaction ($\rm CuGeO_3$), charge ordering ($\rm NaV_2O_5$) and do** on chains and ladders (\ladder). The spectroscopic characterization of the model systems mentioned above has been performed using magnetic inelastic light scattering originating from a spin conserving exchange scattering mechanism. This is also bound to yield more insight into the interrelation between these spin gap excitations and the origin of the pseudo gap in high temperature superconductors.
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Submitted 6 October, 1999;
originally announced October 1999.
