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Coherence of a charge stabilised tin-vacancy spin in diamond
Authors:
Johannes Görlitz,
Dennis Herrmann,
Philipp Fuchs,
Takayuki Iwasaki,
Takashi Taniguchi,
Detlef Rogalla,
David Hardeman,
Pierre-Olivier Colard,
Matthew Markham,
Mutsuko Hatano,
Christoph Becher
Abstract:
Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit's desired charge state. While the negatively charged tin-vacancy ($\text{SnV}^{-}$) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, i…
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Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit's desired charge state. While the negatively charged tin-vacancy ($\text{SnV}^{-}$) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, its usefulness is severely limited by termination of the fluorescence under resonant excitation [1,2,3]. Here, we unveil the underlying charge cycle of group IV-vacancy (G4V) centres and exploit it to demonstrate highly efficient initialisation of the desired negative charge state of single SnV centres while preserving long term stable optical resonances. We furthermore all-optically probe the coherence of the ground state spins by means of coherent population trap** and find a spin dephasing time of 5$μ$s. Additionally, we demonstrate proof-of-principle single shot spin state readout without the necessity of a magnetic field aligned to the symmetry axis of the defect.
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Submitted 27 May, 2022; v1 submitted 11 October, 2021;
originally announced October 2021.
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Spectroscopic Investigations of Negatively Charged Tin-Vacancy Centres in Diamond
Authors:
Johannes Görlitz,
Dennis Herrmann,
Gergő Thiering,
Philipp Fuchs,
Morgane Gandil,
Takayuki Iwasaki,
Takashi Taniguchi,
Michael Kieschnick,
Jan Meijer,
Mutsuko Hatano,
Adam Gali,
Christoph Becher
Abstract:
The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using…
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The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using photoluminescence excitation spectroscopy (PLE) we probe an energetically higher lying excited state and prove fully lifetime limited linewidths of single emitters at cryogenic temperatures. For these emitters we also investigate the stability of the charge state under resonant excitation. These results provide a detailed insight into the spectroscopic properties of the $\text{SnV}^-$ centre and lay the foundation for further studies regarding its suitability in QIP.
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Submitted 11 February, 2020; v1 submitted 20 September, 2019;
originally announced September 2019.
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Spin Measurements of NV Centers Coupled to a Photonic Crystal Cavity
Authors:
Thomas Jung,
Johannes Görlitz,
Benjamin Kambs,
Christoph Pauly,
Nicole Raatz,
Richard Nelz,
Elke Neu,
Andrew M. Edmonds,
Matthew Markham,
Frank Mücklich,
Jan Meijer,
Christoph Becher
Abstract:
Nitrogen-vacancy (NV) centers feature outstanding properties like a spin coherence time of up to one second as well as a level structure offering the possibility to initialize, coherently manipulate and optically read-out the spin degree of freedom of the ground state. However, only about three percent of their photon emission are channeled into the zero phonon line (ZPL), limiting both the rate o…
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Nitrogen-vacancy (NV) centers feature outstanding properties like a spin coherence time of up to one second as well as a level structure offering the possibility to initialize, coherently manipulate and optically read-out the spin degree of freedom of the ground state. However, only about three percent of their photon emission are channeled into the zero phonon line (ZPL), limiting both the rate of indistinguishable single photons and the signal-to-noise ratio (SNR) of coherent spin-photon interfaces. We here report on the enhancement of the SNR of the optical spin read-out achieved by tuning the mode of a two-dimensional photonic crystal (PhC)cavity into resonance with the NV-ZPL. PhC cavities are fabricated by focused ion beam (FIB) milling in thin reactive ion (RIE) etched ultrapure single crystal diamond membranes featuring modes with Q-factors of up to 8250 at mode volumes below one cubic wavelength. NV centers are produced in the cavities in a controlled fashion by a high resolution atomic force microscope (AFM) implantation technique. On cavity resonance we observe a lifetime shortening from 9.0ns to 8.0ns as well as an enhancement of the ZPL emission by almost one order of magnitude. Although on resonance the collection efficiency of ZPL photons and the spin-dependent fluorescence contrast are reduced, the SNR of the optical spin read-out is almost tripled for the cavity-coupled NV centers.
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Submitted 17 July, 2019;
originally announced July 2019.
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Towards wafer-scale diamond nano- and quantum technologies
Authors:
Richard Nelz,
Johannes Görlitz,
Dennis Herrmann,
Abdallah Slablab,
Michel Challier,
Mariusz Radtke,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Elke Neu
Abstract:
We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure…
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We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure witnesses high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our diamond material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to $100 mm$ it offers the opportunity to up-scale diamond-based device fabrication.
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Submitted 22 October, 2018;
originally announced October 2018.
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Coherent control and wave mixing in an ensemble of silicon vacancy centers in diamond
Authors:
Christian Weinzetl,
Johannes Görlitz,
Jonas Nils Becker,
Ian Alexander Walmsley,
Eilon Poem,
Joshua Nunn,
Christoph Becher
Abstract:
Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications, because of the relative ease of fabrication of components. Silicon vacancy centers (SiV) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. He…
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Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications, because of the relative ease of fabrication of components. Silicon vacancy centers (SiV) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. Here, we demonstrate resonant coherent manipulation, stimulated Raman adiabatic passage, and strong light-matter interaction via four-wave mixing of a weak signal field in an ensemble of SiV centers.
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Submitted 30 May, 2018;
originally announced May 2018.
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Ultrafast, all-optical coherent control of single silicon vacancy colour centres in diamond
Authors:
Jonas Nils Becker,
Johannes Görlitz,
Carsten Arend,
Matthew Markham,
Christoph Becher
Abstract:
Recently, the negatively charged silicon vacancy centre (SiV) in diamond has emerged as a novel promising system for quantum information processing (QIP) due to its superior spectral properties and advantageous electronic structure: The SiV offers an optically accessible Λ-type level structure with a large orbital level splitting even without the need of an external magnetic field and previous stu…
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Recently, the negatively charged silicon vacancy centre (SiV) in diamond has emerged as a novel promising system for quantum information processing (QIP) due to its superior spectral properties and advantageous electronic structure: The SiV offers an optically accessible Λ-type level structure with a large orbital level splitting even without the need of an external magnetic field and previous studies determined the ground state coherence time of the centre to be on the order of 35-45ns. While these studies already indicate the feasibility of an ultrafast all-optical coherent control of the SiV, no experimental realization has been presented so far. Here, we report on optical Rabi oscillations and Ramsey interference between the ground and the excited state of the SiV using 12 ps long, resonant rotation pulses. Moreover, utilizing a Λ-scheme, we demonstrate Raman-based coherent Rabi rotations and Ramsey interference within the ground state manifold using a single, 1ps long off-resonant pulse. These measurements prove the accessibility of the complete set of single-qubit operations relying solely on optical fields and pave the way for high-speed QIP applications using SiV centres.
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Submitted 2 March, 2016;
originally announced March 2016.