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Observation of Yu-Shiba-Rusinov states in superconducting graphene
Authors:
E. Cortés-del Río,
J. L. Lado,
V. Cherkez,
P. Mallet,
J-Y. Veuillen,
J. C. Cuevas,
J. M. Gómez-Rodríguez,
J. Fernández-Rossier,
I. Brihuega
Abstract:
When magnetic atoms are inserted inside a superconductor, the superconducting order is locally depleted as a result of the antagonistic nature of magnetism and superconductivity1. Thereby, distinctive spectral features, known as Yu-Shiba-Rusinov states, appear inside the superconducting gap2-4. The search for Yu-Shiba-Rusinov states in different materials is intense, as they can be used as buildin…
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When magnetic atoms are inserted inside a superconductor, the superconducting order is locally depleted as a result of the antagonistic nature of magnetism and superconductivity1. Thereby, distinctive spectral features, known as Yu-Shiba-Rusinov states, appear inside the superconducting gap2-4. The search for Yu-Shiba-Rusinov states in different materials is intense, as they can be used as building blocks to promote Majorana modes5 suitable for topological quantum computing6. Here we report the first realization of Yu-Shiba-Rusinov states in graphene, a non-superconducting 2D material, and without the participation of magnetic atoms. We induce superconductivity in graphene by proximity effect7-9 brought by adsorbing nanometer scale superconducting Pb islands. Using scanning tunneling microscopy and spectroscopy we measure the superconducting proximity gap in graphene and we visualize Yu-Shiba-Rusinov states in graphene grain boundaries. Our results reveal the very special nature of those Yu-Shiba-Rusinov states, which extends more than 20 nm away from the grain boundaries. These observations provide the long sought experimental confirmation that graphene grain boundaries host local magnetic moments10-14 and constitute the first observation of Yu-Shiba-Rusinov states in a chemically pure system.
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Submitted 20 October, 2020;
originally announced October 2020.
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Atomic-scale control of graphene magnetism using hydrogen atoms
Authors:
H. González-Herrero,
J. M. Gómez-Rodríguez,
P. Mallet,
M. Moaied,
J. J. Palacios,
C. Salgado,
M. M. Ugeda,
J. Y. Veuillen,
F. Yndurain,
I. Brihuega
Abstract:
Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments. Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a ~20 meV spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is ess…
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Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments. Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a ~20 meV spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is essentially localized on the carbon sublattice complementary to the one where the H atom is chemisorbed. This atomically modulated spin-texture, which extends several nanometers away from the H atom, drives the direct coupling between the magnetic moments at unusually long distances. Using the STM tip to manipulate H atoms with atomic precision, we demonstrate the possibility to tailor the magnetism of selected graphene regions.
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Submitted 28 September, 2020;
originally announced September 2020.
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Quantum confinement of Dirac quasiparticles in graphene patterned with subnanometer precision
Authors:
E. Cortés-del Río,
P. Mallet,
H. González-Herrero,
J. L. Lado,
J. Fernández-Rossier,
J. M. Gómez-Rodríguez,
J-Y. Veuillen,
I. Brihuega
Abstract:
Quantum confinement of graphene Dirac-like electrons in artificially crafted nanometer structures is a long sought goal that would provide a strategy to selectively tune the electronic properties of graphene, including bandgap opening or quantization of energy levels However, creating confining structures with nanometer precision in shape, size and location, remains as an experimental challenge, b…
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Quantum confinement of graphene Dirac-like electrons in artificially crafted nanometer structures is a long sought goal that would provide a strategy to selectively tune the electronic properties of graphene, including bandgap opening or quantization of energy levels However, creating confining structures with nanometer precision in shape, size and location, remains as an experimental challenge, both for top-down and bottom-up approaches. Moreover, Klein tunneling, offering an escape route to graphene electrons, limits the efficiency of electrostatic confinement. Here, a scanning tunneling microscope (STM) is used to create graphene nanopatterns, with sub-nanometer precision, by the collective manipulation of a large number of H atoms. Individual graphene nanostructures are built at selected locations, with predetermined orientations and shapes, and with dimensions going all the way from 2 nanometers up to 1 micron. The method permits to erase and rebuild the patterns at will, and it can be implemented on different graphene substrates. STM experiments demonstrate that such graphene nanostructures confine very efficiently graphene Dirac quasiparticles, both in zero and one dimensional structures. In graphene quantum dots, perfectly defined energy band gaps up to 0.8 eV are found, that scale as the inverse of the dots linear dimension, as expected for massless Dirac fermions
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Submitted 31 May, 2020; v1 submitted 25 May, 2020;
originally announced May 2020.
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Strong-coupling charge density wave in a one-dimensional topological metal
Authors:
Philip Hofmann,
Miguel Ugeda,
Antonio J. Martínez-Galera,
Anna Stróżecka,
Jose M. Gómez-Rodríguez,
Emile Rienks,
Maria Fuglsang Jensen,
J. I. Pascual,
Justin W. Wells
Abstract:
Scanning tunnelling microscopy and low energy electron diffraction show a dimerization-like reconstruction in the one-dimensional atomic chains on Bi(114) at low temperatures. While one-dimensional systems are generally unstable against such a distortion, its observation is not expected for this particular surface, since there are several factors that should prevent it: One is the particular spin…
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Scanning tunnelling microscopy and low energy electron diffraction show a dimerization-like reconstruction in the one-dimensional atomic chains on Bi(114) at low temperatures. While one-dimensional systems are generally unstable against such a distortion, its observation is not expected for this particular surface, since there are several factors that should prevent it: One is the particular spin texture of the Fermi surface, which resembles a one-dimensional topological state, and spin protection should hence prevent the formation of the reconstruction. The second is the very short nesting vector $2 k_F$, which is inconsistent with the observed lattice distortion. A nesting-driven mechanism of the reconstruction is indeed excluded by the absence of any changes in the electronic structure near the Fermi surface, as observed by angle-resolved photoemission spectroscopy. However, distinct changes in the electronic structure at higher binding energies are found to accompany the structural phase transition. This, as well as the observed short correlation length of the pairing distortion, suggest that the transition is of the strong coupling type and driven by phonon entropy rather than electronic entropy.
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Submitted 11 July, 2017;
originally announced July 2017.
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Unveiling the Penta-Silicene nature of perfectly aligned single and double strand Si-nanoribbons on Ag(110)
Authors:
Jorge I. Cerdá,
Jagoda Sławińska,
Guy Le Lay,
Antonela C. Marele,
José M. Gómez-Rodríguez,
María . E. Dávila
Abstract:
We reveal through extensive DFT calculations, confronted to key experimental facts, the hidden penta-silicene nature of single and double strand chiral Si nanoribbons perfectly aligned on Ag(110) surfaces, that were discovered in 2005, but whose structure remained elusive. We thus simultaneously demonstrate the existence of penta-silicene, a recently conjectured novel pentagonal silicon allotrope,…
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We reveal through extensive DFT calculations, confronted to key experimental facts, the hidden penta-silicene nature of single and double strand chiral Si nanoribbons perfectly aligned on Ag(110) surfaces, that were discovered in 2005, but whose structure remained elusive. We thus simultaneously demonstrate the existence of penta-silicene, a recently conjectured novel pentagonal silicon allotrope, which remained unveiled for 11 years, and which materializes a paradigmatic shift from normal hexagonal silicene.
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Submitted 29 April, 2016;
originally announced April 2016.
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Towards scalable nano-engineering of graphene
Authors:
A. J. Martínez-Galera,
I. Brihuega,
A. Gutiérrez-Rubio,
T. Stauber,
J. M. Gómez-Rodríguez
Abstract:
By merging bottom-up and top-down strategies we tailor graphene's electronic properties within nanometer accuracy, which opens up the possibility to design optical and plasmonic circuitries at will. In a first step, graphene electronic properties are macroscopically modified exploiting the periodic potential generated by the self assembly of metal cluster superlattices on a graphene/Ir(111) surfac…
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By merging bottom-up and top-down strategies we tailor graphene's electronic properties within nanometer accuracy, which opens up the possibility to design optical and plasmonic circuitries at will. In a first step, graphene electronic properties are macroscopically modified exploiting the periodic potential generated by the self assembly of metal cluster superlattices on a graphene/Ir(111) surface. We then demonstrate that individual metal clusters can be selectively removed by a STM tip with perfect reproducibility and that the structures so created are stable even at room temperature. This enables one to nanopattern circuits down to the 2.5 nm only limited by the periodicity of the Moiré-pattern, i.e., by the distance between neighbouring clusters, and different electronic and optical properties should prevail in the covered and uncovered regions. The method can be carried out on micro-meter-sized regions with clusters of different materials permitting to tune the strength of the periodic potential.
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Submitted 21 November, 2014;
originally announced November 2014.
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Unravelling the intrinsic and robust nature of van Hove singularities in twisted bilayer graphene
Authors:
I. Brihuega,
P. Mallet,
H. González-Herrero,
G. Trambly de Laissardière,
M. M. Ugeda,
L. Magaud,
J. M. Gómez-Rodríguez,
F. Ynduráin,
J. -Y. Veuillen
Abstract:
Extensive scanning tunnelling microscopy and spectroscopy experiments complemented by first principles and parameterized tight binding calculations provide a clear answer to the existence, origin and robustness of van Hove singularities (vHs) in twisted graphene layers. Our results are conclusive: vHs due to interlayer coupling are ubiquitously present in a broad range (from 1° to 10°) of rotation…
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Extensive scanning tunnelling microscopy and spectroscopy experiments complemented by first principles and parameterized tight binding calculations provide a clear answer to the existence, origin and robustness of van Hove singularities (vHs) in twisted graphene layers. Our results are conclusive: vHs due to interlayer coupling are ubiquitously present in a broad range (from 1° to 10°) of rotation angles in our graphene on 6H-SiC(000-1) samples. From the variation of the energy separation of the vHs with rotation angle we are able to recover the Fermi velocity of a graphene monolayer as well as the strength of the interlayer interaction. The robustness of the vHs is assessed both by experiments, which show that they survive in the presence of a third graphene layer, and calculations, which test the role of the periodic modulation and absolute value of the interlayer distance. Finally, we clarify the origin of the related moiré corrugation detected in the STM images.
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Submitted 5 September, 2012;
originally announced September 2012.
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Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy
Authors:
P. Mallet,
I. Brihuega,
S. Bose,
M. M. Ugeda,
J. M. Gómez-Rodríguez,
K. Kern,
J. Y. Veuillen
Abstract:
Pseudospin, an additional degree of freedom related to the honeycomb structure of graphene, is responsible of many of the outstanding electronic properties found in this material. This article provides a clear understanding of how such pseudospin impacts the quasiparticle interferences of monolayer (ML) and bilayer (BL) graphene measured by low temperature scanning tunneling microscopy and spectro…
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Pseudospin, an additional degree of freedom related to the honeycomb structure of graphene, is responsible of many of the outstanding electronic properties found in this material. This article provides a clear understanding of how such pseudospin impacts the quasiparticle interferences of monolayer (ML) and bilayer (BL) graphene measured by low temperature scanning tunneling microscopy and spectroscopy. We have used this technique to map, with very high energy and space resolution, the spatial modulations of the local density of states of ML and BL graphene epitaxialy grown on SiC(0001), in presence of native disorder. We perform a Fourier transform analysis of such modulations including wavevectors up to unit-vectors of the reciprocal lattice. Our data demonstrate that the quasiparticle interferences associated to some particular scattering processes are suppressed in ML graphene, but not in BL graphene. Most importantly, interferences with 2qF wavevector associated to intravalley backscattering are not measured in ML graphene, even on the images with highest resolution. In order to clarify the role of the pseudospin on the quasiparticle interferences, we use a simple model which nicely captures the main features observed on our data. The model unambiguously shows that graphene's pseudospin is responsible for such suppression of quasiparticle interferences features in ML graphene, in particular for those with 2qF wavevector. It also confirms scanning tunneling microscopy as a unique technique to probe the pseudospin in graphene samples in real space with nanometer precision. Finally, we show that such observations are robust with energy and obtain with great accuracy the dispersion of the π-bands for both ML and BL graphene in the vicinity of the Fermi level, extracting their main tight binding parameters.
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Submitted 27 August, 2012;
originally announced August 2012.
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Electronic and structural characterization of divacancies in irradiated graphene
Authors:
Miguel M. Ugeda,
Iván Brihuega,
Fanny Hiebel,
Pierre Mallet,
Jean-Yves Veuillen,
José M. Gómez-Rodríguez,
Félix Ynduráin
Abstract:
We provide a thorough study of a carbon divacancy, a fundamental but almost unexplored point defect in graphene. Low temperature scanning tunneling microscopy (STM) imaging of irradiated graphene on different substrates enabled us to identify a common two-fold symmetry point defect. Our first principles calculations reveal that the structure of this type of defect accommodates two adjacent missing…
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We provide a thorough study of a carbon divacancy, a fundamental but almost unexplored point defect in graphene. Low temperature scanning tunneling microscopy (STM) imaging of irradiated graphene on different substrates enabled us to identify a common two-fold symmetry point defect. Our first principles calculations reveal that the structure of this type of defect accommodates two adjacent missing atoms in a rearranged atomic network formed by two pentagons and one octagon, with no dangling bonds. Scanning tunneling spectroscopy (STS) measurements on divacancies generated in nearly ideal graphene show an electronic spectrum dominated by an empty-states resonance, which is ascribed to a spin-degenerated nearly flat band of $π$-electron nature. While the calculated electronic structure rules out the formation of a magnetic moment around the divacancy, the generation of an electronic resonance near the Fermi level, reveals divacancies as key point defects for tuning electron transport properties in graphene systems.
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Submitted 23 December, 2011;
originally announced December 2011.
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Point defects on graphene on metals
Authors:
M. M. Ugeda,
D. Fernández-Torre,
I. Brihuega,
P. Pou,
A. J. Martínez-Galera,
R. Pérez,
J. M. Gómez-Rodríguez
Abstract:
Understanding the coupling of graphene with its local environment is critical to be able to integrate it in tomorrow's electronic devices. Here we show how the presence of a metallic substrate affects the properties of an atomically tailored graphene layer. We have deliberately introduced single carbon vacancies on a graphene monolayer grown on a Pt(111) surface and investigated its impact in the…
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Understanding the coupling of graphene with its local environment is critical to be able to integrate it in tomorrow's electronic devices. Here we show how the presence of a metallic substrate affects the properties of an atomically tailored graphene layer. We have deliberately introduced single carbon vacancies on a graphene monolayer grown on a Pt(111) surface and investigated its impact in the electronic, structural and magnetic properties of the graphene layer. Our low temperature scanning tunneling microscopy studies, complemented by density functional theory, show the existence of a broad electronic resonance above the Fermi energy associated with the vacancies. Vacancy sites become reactive leading to an increase of the coupling between the graphene layer and the metal substrate at these points; this gives rise to a rapid decay of the localized state and the quenching of the magnetic moment associated with carbon vacancies in free-standing graphene layers.
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Submitted 8 April, 2011;
originally announced April 2011.
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The missing atom as a source of carbon magnetism
Authors:
M. M. Ugeda,
I. Brihuega,
F. Guinea,
J. M. Gomez-Rodriguez
Abstract:
Atomic vacancies have a strong impact in the mechanical, electronic and magnetic properties of graphene-like materials. By artificially generating isolated vacancies on a graphite surface and measuring their local density of states on the atomic scale, we have shown how single vacancies modify the electronic properties of this graphene-like system. Our scanning tunneling microscopy experiments,…
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Atomic vacancies have a strong impact in the mechanical, electronic and magnetic properties of graphene-like materials. By artificially generating isolated vacancies on a graphite surface and measuring their local density of states on the atomic scale, we have shown how single vacancies modify the electronic properties of this graphene-like system. Our scanning tunneling microscopy experiments, complemented by tight binding calculations, reveal the presence of a sharp electronic resonance at the Fermi energy around each single graphite vacancy, which can be associated with the formation of local magnetic moments and implies a dramatic reduction of the charge carriers' mobility. While vacancies in single layer graphene naturally lead to magnetic couplings of arbitrary sign, our results show the possibility of inducing a macroscopic ferrimagnetic state in multilayered graphene samples just by randomly removing single C atoms.
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Submitted 4 February, 2010; v1 submitted 18 January, 2010;
originally announced January 2010.
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In situ observation of stress relaxation in epitaxial graphene
Authors:
Alpha T. N'Diaye,
Raoul van Gastel,
Antonio J. Martinez-Galera,
Johann Coraux,
Hichem Hattab,
Dirk Wall,
Frank-J. Meyer zu Heringdorf,
Michael Horn-von Hoegen,
Jose M. Gomez-Rodriguez,
Bene Poelsema,
Carsten Busse,
Thomas Michely
Abstract:
Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene layer, i.e. stripes of partially delaminated graphene. With low energy electron microscopy (LEEM) we investigate the wrinkling phenomenon in situ. Upon temperature…
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Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene layer, i.e. stripes of partially delaminated graphene. With low energy electron microscopy (LEEM) we investigate the wrinkling phenomenon in situ. Upon temperature cycling we observe hysteresis in the appearance and disappearance of the wrinkles. Simultaneously with wrinkle formation a change in bright field imaging intensity of adjacent areas and a shift in the moire spot positions for micro diffraction of such areas takes place. The stress relieved by wrinkle formation results from the mismatch in thermal expansion coefficients of graphene and the substrate. A simple one-dimensional model taking into account the energies related to strain, delamination and bending of graphene is in qualitative agreement with our observations.
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Submitted 15 September, 2009; v1 submitted 4 June, 2009;
originally announced June 2009.
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Tip and Surface Determination from Experiments and Simulations of Scanning Tunneling Microscopy and Spectroscopy
Authors:
Óscar Paz,
Iván Brihuega,
José M. Gómez-Rodríguez,
José M. Soler
Abstract:
We present a very efficient and accurate method to simulate scanning tunneling microscopy images and spectra from first-principles density functional calculations. The wave-functions of the tip and sample are calculated separately on the same footing, and propagated far from the surface using the vacuum Green's function. This allows to express the Bardeen matrix elements in terms of convolutions…
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We present a very efficient and accurate method to simulate scanning tunneling microscopy images and spectra from first-principles density functional calculations. The wave-functions of the tip and sample are calculated separately on the same footing, and propagated far from the surface using the vacuum Green's function. This allows to express the Bardeen matrix elements in terms of convolutions, and to obtain the tunneling current at all tip positions and bias voltages in a single calculation. The efficiency of the method opens the door to real time determination of both tip and surface composition and structure, by comparing experiments to simulated images for a variety of precomputed tips. Comparison with the experimental topography and spectra of the Si(111)-(7x7) surface show a much better agreement with Si than with W tips, implying that the metallic tip is terminated by silicon.
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Submitted 10 November, 2004;
originally announced November 2004.