Direct mass measurements of neutron-rich zinc and gallium isotopes: an investigation of the formation of the first r-process peak
Authors:
Andrew Jacobs,
Stylianos Nikas,
John Ash,
Behnam Ashrafkhani,
Ivana Belosovic,
Julian Bergmann,
Callum Brown,
Jaime Cardona,
Eleanor Dunling,
Timo Dickel,
Gabriella Gelinas,
Zach Hockenbery,
Sakshi Kakkar,
Brian Kootte,
Ali Molaebrahimi,
Eleni Marina Lykiardopoulou,
Tobias Murboeck,
Stefan Paul,
Wolfgang R. Plass,
William S. Porter,
Rane Simpson,
Coulter Walls,
Yilin Wang,
Jens Dilling,
Ania Kwiatkowski
Abstract:
The prediction of isotopic abundances resulting from the rapid neutron capture process (r-process) requires high-precision mass measurements. Mass measurements of $^{79-83}$Zn and $^{85,86}$Ga using TITAN's on-line time-of-flight spectrometer. First time measurements are performed for $^{79m}$Zn, $^{83}$Zn, and $^{86}$Ga. These measurements reduced uncertainties, and are used to calculate isotopic…
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The prediction of isotopic abundances resulting from the rapid neutron capture process (r-process) requires high-precision mass measurements. Mass measurements of $^{79-83}$Zn and $^{85,86}$Ga using TITAN's on-line time-of-flight spectrometer. First time measurements are performed for $^{79m}$Zn, $^{83}$Zn, and $^{86}$Ga. These measurements reduced uncertainties, and are used to calculate isotopic abundances near the first r-process abundance peak using astrophysical conditions present during a binary neutron star (BNS) merger. Good agreement across a range of trajectories is found when comparing to several metal-poor stellar abundances. Particularly, this subset of trajectories produces agreement with the abundance pattern of both the `r/s-star' HD94028 as well as the `r-process star' HD222925. These findings point to a high degree of sensitivity to the electron fraction of a BNS merger on the final elemental abundance pattern near the first r-process peak. In particular, we find that small changes in electron fraction produce distinct abundance patterns that match those of metal-poor stars with different classifications, calls the need for an i-process into question.
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Submitted 20 September, 2023;
originally announced September 2023.
Carrier thermal escape in families of InAs/InP self-assembled quantum dots
Authors:
Guillaume Gélinas,
Ali Lanacer,
Richard Leonelli,
Remo A. Masut,
Sylvain Raymond,
Philip J. Poole
Abstract:
We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by tra…
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We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or non-radiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main escape mechanism of the carriers confined in the quantum dots is through thermal emission to the wetting layer. The activation energy for this process is found to be close to one-half the energy difference between that of a given family of quantum dots and that of the wetting layer as measured by photoluminescence excitation experiments. This indicates that electron and holes exit the InAs quantum dots as correlated pairs.
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Submitted 2 October, 2009;
originally announced October 2009.
